Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi2Ti2O7 high‐k gate dielectrics

We report the fabrication of organic thin‐film transistors (OTFTs) with high‐k gate dielectrics of Mn‐doped Bi₂Ti₂O₇ (BTO) films. 3% Mn‐doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10^–8 A/cm² at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10^–4 A/cm². Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene‐based OTFTs with the Mn‐doped BTO gate dielectrics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrochemical transient investigations on the diffusion of minority charge carriers in YSZ doped by transition metal oxides

The voltage relaxation of galvanic cells with zirconia based electrolytes polarised between an inert Pt electrode and a Pt/air electrode is analysed to obtain the diffusion coefficients of holes and electrons. The hole diffusion coefficient can be reduced by replacing zirconium with guest ions of different size, e.g. Nb⁵⁺ and Ti⁴⁺. The TZP phase with 3 mol% Y₂O₃ of dopant has a higher hole diffusion coefficient than the CYZ phase doped with 8 mol% Y₂O₃. 1 and 3 mol% p-type MnO_1.5 doping increases the conductivity of holes in CYZ to a large extend, but does not influence the diffusivity. This indicates that the doping increases the hole conductivity through an increased concentration of holes. In the case of 10 and 15 mol% MnO_1.5 doped Z3Y, the electronic conductivity is dominant. The chemical diffusion coefficients which are related to the oxygen vacancies were determined by GITT. The results show that the chemical diffusion coefficient of oxygen vacancies is much larger than that for holes in zirconia.     

Crystal structure and ferroelectric properties of Mn-doped ((Ka0.5Na0.5)0.935Li0.065)NbO3 lead-free ceramics

In this study, ceramics in Mn-doped ((Ka_0.5Na_0.5)_0.935Li_0.065)NbO₃ ceramics (Mn content = 0.25, 0.50, 1.00 and 1.50 mol%) were successfully prepared by the conventional mixed-oxide technique. The crystal structure was identified by XRD as a single-phase perovskite structure with tetragonal symmetry. The valence of Mn ions, characterized by the synchrotron XAS technique, was seen to change from Mn⁴⁺ to Mn³⁺ during the formation of the crystal. The valence state of Mn strongly affected the crystal structure and ferroelectric properties of the ceramics. The ferroelectric parameters show the decrease of remnant polarization and the increase of the coercive field with increasing MnO₂ content. The results confirm the Mn³⁺ in KNNL perovskite lattices, leading to the formation of oxygen vacancies and hardening effects.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Impact of annealing atmosphere on the multiferroic and dielectric properties of BiFeO3/Bi3.25La0.75Ti3O12 thin films

Multiferroic BiFeO₃/Bi_3.25La_0.75Ti₃O₁₂ films annealed in different atmospheres (N₂ or O₂) were prepared on Pt/Ti/SiO₂/Si substrates via a metal organic decomposition method. Based on our experimental results, it is considered that, in the films annealed in N₂, fewer Fe²⁺ ions while more oxygen vacancies are involved. As a result, at room temperature, predominated by the reduced Fe²⁺ fraction, lower leakage current and dielectric loss, better ferroelectric property while reduced magnetization are observed. However, the oxygen vacancies might be thermally activated at elevated temperature; thus, more strongly temperature-dependent leakage current and a higher dielectric relaxation peak are observed for the films annealed in N₂.     

Ferromagnetism in carbon-doped In2O3 thin films

Carbon-doped In₂O₃ thin films exhibiting ferromagnetism at room temperature were prepared on Si (100) substrates by the rf-magnetron co-sputtering technique. The effects of carbon concentration as well as oxygen atmosphere on the ferromagnetic property of the thin films were investigated. The saturated magnetizations of thin films varied from 1.23 to 4.86 emu/cm³ with different carbon concentrations. The ferromagnetic signal was found stronger in samples with higher oxygen vacancy concentrations. In addition, deposition temperature and different types of substrates also affect the ferromagnetic properties of carbon-doped In₂O₃ thin films. This may be related to the oxygen vacancies in the thin film system. The experiment suggests that oxygen vacancies play an important role in introducing ferromagnetism in thin films.     

The influence of oxygen vacancies on the magnetic state of La<Subscript>0.50</Subscript>D<Subscript>0.50</Subscript>MnO<Subscript>3−γ</Subscript> (D=Da,Sr) manganites

The crystal structure and magnetic and electric transport properties of polycrystalline La_0.50D_0.50MnO_3?γmanganites (D=Ca, Sr) were studied experimentally depending on the concentration of oxygen vacancies. The La_0.50Sr_0.50MnO_3?γ system of anion-deficient compositions was found to be stable and possess a perovskite structure only up to the γ=0.25 concentration of oxygen vacancies, whereas, for the La_0.50Ca_0.50MnO_3?γ system, we were able to obtain samples with the concentrations of oxygen vacancies up to γ=0.50. The stoichiometric La_0.50D_0.50MnO₃ (D=Ca, Sr) compositions had O-orthorhombic (Ca) and tetragonal (Sr) unit cells. The unit cell of the anion-deficient La_0.50Sr_0.50MnO_3?γ manganites also became O-orthorhombic when the concentration of oxygen vacancies increased γτ;0.16). Oxygen deficiency in La_0.50Sr_0.50MnO_3?γ first caused the transition from the antiferromagnetic to the ferromagnetic state γ～0.06) and then to the spin glass state γ～0.16). Supposedly, the oxygen vacancies in the reduced La_0.50Sr_0.50MnO_{3? γ} samples with γ≥0.16 were disordered. The special feature of the La_0.50Ca_0.50MnO_3?γ manganites was a nonuniform distribution of oxygen vacancies in the La_0.50Ca_0.50MnO_2.75 phase. In the La_0.50Ca_0.50MnO_2.50 phase, the type of oxygen vacancy ordering corresponded to that in Sr₂Fe₂O₅, which led to antiferromagnetic ordering. The specific electric resistance of the La_0.50D_0.50MnO_3?γ anion-deficient samples increased with increasing oxygen deficiency. The magnetoresistance of all samples gradually increased as a result of the transition to the magnetically ordered state. Supposedly, the La_0.50Ca_0.50MnO_3?γ manganites in the range of oxygen vacancy concentrations 0.09≤γ≤0.50 had a mixed state and contained microdomains with different types of magnetic ordering. The experimentally observed properties can be interpreted based on the model of phase layering and the model of superexchange magnetic ordering.     

Microstructure and varistor properties of ZnO–V2O5–MnO2 ceramics with Ta2O5 addition

The effect of Ta₂O₅ addition on microstructure, electrical properties, and dielectric characteristics of the quaternary ZnO–V₂O₅–MnO₂ vaistor ceramics was investigated. Analysis of the microstructure indicated that the quaternary ZnO–V₂O₅–MnO₂–Ta₂O₅ ceramics consisted of mainly ZnO grain and minor secondary phases such as Zn₃(VO₄)₂, ZnV₂O₄, TaVO₅, and Ta₂O₅. As the amount of Ta₂O₅ increased, the sintered density increased from 94.8 to 97.2% of the theoretical density (5.78 g/cm³ for ZnO), whereas the average grain size decreased from 7.7 to 6.0 μm. The ceramics added with 0.05 mol% Ta₂O₅ exhibited the highest breakdown field (2715 V/cm) and the highest nonlinear coefficient (20). However, further increase caused α to abruptly decrease. The Ta₂O₅ acted as a donor due to the increase of electron concentration in accordance with the amount of Ta₂O₅. The donor concentration increased from 1.97×10¹⁸ to 3.04×10¹⁸cm^?3 with increasing the amount of Ta₂O₅ and the barrier height exhibited the maximum value (0.95 eV) at 0.05 mol% Ta₂O₅.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

Preparation and photoluminescence properties of the Eu2+, Sm3+ co-doped Li2SrSiO4 phosphors

A series of Eu²⁺ and Sm³⁺ co-doped Li₂SrSiO₄ phosphors are prepared by the high temperature solid-state reaction. The morphology, structure and spectroscopic properties of the prepared samples are characterized by scanning electron microscopy, X-ray diffraction, diffuse reflection spectra, photoluminescence spectra and electron paramagnetic resonance spectra, respectively. The effect of Sm³⁺ doping concentration on the photoluminescence intensity of the prepared samples is also investigated. The results indicate that the crystal structure of Li₂SrSiO₄ is not changed with the Eu²⁺, Sm³⁺ co-doping. The spherical-like particle size of the obtained product is about 20–30 nm in diameter. When the Sm³⁺ concentration is 0.3 mol% and the Eu²⁺ concentration is 0.7 mol%, the phosphors show the maximum emission intensity, which is 50% higher than that of Eu²⁺ doped Li₂SrSiO₄. Excited at 420 nm, the phosphor presents a single broad emission band peaking at 558 nm, which is ascribed to the 4f⁶5d¹ → 4f⁷ transitions of Eu²⁺ and ⁴G_5/2 → ⁶H_5/2 and ⁴G_5/2 → ⁶H_7/2 transitions of Sm³⁺. The Commission International de I′Eclairage chromaticity coordinates of Li₂SrSiO₄:0.7 mol% Eu²⁺, 0.3 mol% Sm³⁺ are x = 0.28, y = 0.28.     

Effect of Y2O3 addition on the conductivity and elastic modulus of (CeO2)1 − x(YO1.5)x

The conductivity and elastic modulus of (CeO₂)_1 − x(YO_1.5)_x for x values of 0.10, 0.15, 0.20, 0.30, and 0.40 were investigated by experiments and molecular dynamics simulations. The calculated conductivity exhibited a maximum value at approximately 15 mol% Y₂O₃; this trend agreed with that of the experimental results. In order to clarify the reason for the occurrence of the maximum conductivity, the paths for the transfer of oxygen vacancies were counted. The numerical result revealed that as the content of Y₂O₃ dopant increases, the number of paths for the transfer of oxygen vacancies decreases, whereas the number of oxygen vacancies for conductivity increases. Thus, the trade-off between the increase in the number of vacancy sites and the decrease in the vacancy transfer was considered to be the reason for the maximum conductivity occurring at the Y₂O₃ dopant content of approximately 15 mol%. The calculated elastic modulus also exhibited a minimum value at approximately 20 mol% Y₂O₃, which also agreed with the experimental results. It was shown that the Y–O–Y bonding energy increased with the increasing content of Y₂O₃ dopant. Thus, the trade-off between the increase in the number of vacancy sites and that in the Y–O–Y bonding energy was considered to be the reason for the minimum elastic modulus occurring at the Y₂O₃ dopant content of approximately 20 mol%.     

Mass and kinetic energy distribution of the species generated by laser ablation of La<Subscript>0.6</Subscript>Ca<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript>

The mass distributions of the species generated by laser ablation from a La_0.6Ca_0.4MnO₃ target using laser irradiation wavelengths of 193 nm, 266 nm and 308 nm have been investigated with and without a synchronized gas pulse of N₂O. The kinetic energies of the species are measured using an electrostatic deflection energy analyzer, while the mass distributions of the species were analyzed with a quadrupole mass filter. In vacuum (pressure 10⁻⁷ mbar), the ablation plume consists of metal atoms and ions such as La, Ca, Mn, O, LaO, as well as multiatomic species, e.g. LaMnO⁺. The LaO⁺ diatomic species are by far the most intense diatomic species in the plume, while CaO and MnO are only detected in small amounts. The interaction of a reactive N₂O gas pulse with the ablation plume leads to an increase in plume reactivity, which is desired when thin manganite films are grown, in order to incorporate the necessary amount of oxygen into the film. The N₂O gas pulse appears to have a significant influence on the oxidation of the Mn species in the plume, and on the creation of negative ions, such as LaO⁻,O⁻ and O₂⁻.     

Effect of CO2 laser irradiation on the transport properties of La0.67Ba0.33MnO3 thin film

The effect of CO₂ laser irradiation on La_0.67Ba_0.33MnO₃ epitaxial thin film was investigated. Epitaxial thin films grown by pulsed laser deposition were irradiated by a CO₂ laser in air for 10-60 s. It is shown that after CO₂ laser irradiation treatment, the crystallinity of the film is strongly enhanced. It is found that a dramatic decrease in the resistivity of the CO₂-laser-irradiated film is accompanied by a remarkable increase in its insulator-metal transition temperature and the temperature coefficient of resistance. This significant improvement of its structure and properties is achieved in several dozens of seconds and surpasses that observed in films annealed in an oxygen atmosphere at 900 ^°C for 12 h, suggesting that CO₂ laser irradiation is a new and effective tool to optimize CMR manganites for bolometric applications.     

Sonication enhances the stability of MnO2 nanoparticles on silk film template for enzyme mimic application

We have developed an in-situ method using sonication (3 mm probe sonicator, 30 W, 20 kHz) and auto-reduction (control) to study the mechanism of the formation of manganese dioxide (MnO₂) on a solid template (silk film), and its resulting enzymatic activity on tetramethylbenzidine (TMB) substrate. The fabrication of the silk film was first optimized for stability (no degradation) and optical transparency. A factorial approach was used to assess the effect of sonication time and the initial concentration of potassium permanganate (KMnO₄). The result indicated a significant correlation with a fraction of KMnO₄ consumed and MnO₂ formation. Further, we found that the optimal process conditions to obtain a stable silk film with highly catalytic MnO₂ nanoparticles (NPs) was 30 min of sonication in the presence of 0.5 mM of KMnO₄ at a temperature of 20–24 °C. Under the optimal condition, we monitored in-situ the formation of MnO₂ on the silk film, and after thorough rinsing, the in-situ catalysis of 0.8 mM of TMB substrate. For control, we used the auto-reduction of KMnO₄ onto the silk film after about 16 h. The result from single-wavelength analysis confirmed the different kinetics rates for the formation of MnO₂ via sonication and auto-reduction. The result from the multivariate component analysis indicated a three components route for sonication and auto-reduction to form MnO₂-Silk. Overall, we found that the smaller size, more mono-dispersed, and deeper buried MnO₂ NPs in silk film prepared by sonication, conferred a higher catalytic activity and stability to the hybrid material.     

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior

With increasing annealing temperature (T_anneal), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric (E_AF) and ferroelectric‐to‐antiferroelectric (E_FA) transition of a 9.2 nm thick Hf_0.3Zr_0.7O₂ film decreased. The energy storage densities of the Hf_0.3Zr_0.7O₂ films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm³, 40.4 J/cm³, and 28.3 J/cm³, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf_0.3Zr_0.7O₂ film crystallized at 600 °C was the largest (～46) as it had the smallest E_AF and E_FA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of T_anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Oxygen electrodes of zirconia electrolytes: fundamentals and application to analysis of oxygen containing gases

The kinetics of the oxygen exchange reaction and the reduction of NO at La_0.8Sr_0.2CoO₃−, La_0.8Sr_0.2MnO₃− and Ag-electrodes on stabilized zirconia (8mol% Y₂0₃=YSZ) has been studied by means of electrochemical methods (impedance, I-U characteristics). For La_0.8Sr_0.2CoO₃ electrodes the oxygen exchange was found to proceed via the bulk of the electrode with a rate limiting oxygen exchange at the electrode surface. Electrodes based on La_0.8Sr_0.2MnO₃ change their electrode characteristics with the applied potential. At low cathodic polarization the electrode reaction is limited to the three-phase boundary electrode/YSZ/gas. At high cathodic potentials oxygen vacancies are created and consequently additional oxygen is exchanged via the electrode bulk. Furthermore, a significant NO reduction was observed which indicate a reaction with the oxygen vacancies at the electrode surface. For Ag a rate limiting transport of oxygen atoms through the bulk of the electrode was found. As a consequence the oxygen concentration at the electrode surface remains nearly constant. In this context, the observed inactivity for the NO reduction of Ag-electrodes may be explained. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Local structure analysis of YSZ by Y-89 MAS-NMR

The local coordination structure around Yttrium ions in yttria stabilized zirconia (YSZ) has been investigated by ⁸⁹Y MAS-NMR. The NMR spectrum showed multiple peaks corresponding to yttrium ions in different coordination numbers. The compositional dependence of spectra was observed. Yttrium ions of different oxygen coordination number were quantified. The oxygen vacancy concentration around the cations was determined. It was found that the vacancies were distributed around Zirconium ions in lower Y₂O₃ concentrations, and the vacancy concentration located to Yttrium began increasing at concentrations above 10 mol% Y₂O₃. The local structure change was able to be directly observed by ⁸⁹Y NMR measurements.     

Exchange bias in thin-film (Co/Pt)3/Cr2O3 multilayers

We have fabricated exchange-biased Co/Pt layers ((0.3 nm/1.5 nm)×3) on (0 0 1)-oriented Cr₂O₃ thin films. The multilayered films showed extremely smooth surfaces and interfaces with root mean square roughness of ≈0.3 nm for 10 μm×10 μm area. The Cr₂O₃ films display sufficient insulation with a relative low leakage current (1.17×10⁻² A/cm² at 380 MV/m) at room temperature which allowed us to apply electric field as high as 77 MV/m. We find that the sign of the exchange bias and the shape of the hysteresis loops of the out-of-plane magnetized Co/Pt layers can be delicately controlled by adjusting the magnetic field cooling process through the Néel temperature of Cr₂O₃. No clear evidence of the effect of electric field and the electric field cooling was detected on the exchange bias for fields as high as 77 MV/m. We place the upper bound of the shift in exchange bias field due to electric field cooling to be 5 Oe at 250 K.     

Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition

Ta₂O₅/Al₂O₃ stacked thin film was fabricated as the gate dielectric for low-voltage-driven amorphous indium–gallium–zinc-oxide (IGZO) thin film transistors (TFTs). The Ta₂O₅/Al₂O₃ stacked thin film exhibits a combination of the advantages of Al₂O₃ and Ta₂O₅. The IGZO TFT with Ta₂O₅/Al₂O₃ stack exhibits good performance with large saturation mobility of 26.66 cm² V⁻¹ s⁻¹, high on/off current ratio of 8 × 10⁷, and an ultra-small subthreshold swing (SS) of 78 mV/decade. Such small SS value is even comparable with that of submicrometer single-crystalline Si MOSFET.