Trapping levels in PbI2

A first investigation on trapping levels in PbI₂, performed by the Thermally Stimulated Current (TSC) technique, is presented. Three hole trapping centers are evidenced at 0.12, 0.29 and 0.59 eV above the valence band, with densities ranging between 8 × 10¹⁴ and 5 × 10¹⁶ cm^?3 and capture cross-sections between 8 × 10^?21 and 3 × 10^?17 cm². The center at 0.59 eV is likely responsible for the relatively short trapping time in PbI₂, as determined with nuclear techniques. By using a particular method, the behaviour of hole drift mobility along the layers as a function of temperature is determined for the first time. Finally, the presence of a spurious peak, not sensitive to irradiation, is reported and discussed.     

Electret properties of ethylene–propylene random co-polymer

Thermally stimulated current (TSC) spectra were examined for ethylene–propylene (EP) random co-polymer at different charging voltages V_p with positive and negative polarities. Observed TSC spectra showed two well-separated TSC bands, B_L and B_H, which respectively appeared in the temperature regions below and above 100 °C. Observed V_p dependence of B_L was quite different from that of typical polypropylene homo-polymer: As V_p increased, B_L band grew keeping its peak position same at 65 °C, and the band shape unchanged, as if the traps responsible for the B_L band are a single set of traps with the same trap depth and capture cross section. The trap depth of B_L was about 1.9 eV and 1.7 eV for positively charged EP and talc-containing EP samples, respectively. EP samples also showed unique TSC bands above 100 °C: one is a narrow TSC band peaked at 120 °C and the other is an unusual TSC band which was non-vanishing even at 165 °C just before destruction of samples by their melting. Consequently, the utmost stable charge density in EP co-polymer above 100 °C was found to be 3.5 × 10^?4 C/m² and 6.0 × 10 ^?4 C/m² for positively and negatively charged samples, respectively. These equivalent surface charge densities are much larger than those of usual polypropylene homo-polymer.     

Trap levels in layered semiconductor Ga2SeS

Trap levels in nominally undoped Ga₂SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga₂SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7×10⁻²³, 1.8×10⁻²³ and 2.8×10⁻²² cm² with concentrations of 1.3×10¹², 5.4×10¹² and 4.2×10¹² cm⁻³, respectively.     

Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements

Thermally stimulated current (TSC) measurements were carried out on as-grown n-Ga₄Se₃S layered crystals in the temperature range 10–300 K. The experimental data were analysed by using different heating rates, initial rise, curve fitting and isothermal decay methods. The results of the analysis showed good agreement with each other. The measurements revealed the presence of one trapping level with activation energy of 23 meV. The corresponding capture cross-section and concentration of traps were found to be 2.2 × 10^?23 cm² and 2.9 × 10¹¹ cm^?3, respectively. TSC experiments showed the presence of an exponential distribution of electron-trapping states in Ga₄Se₃S crystal. The variation of one order of magnitude in the trap density for every 34 meV was obtained.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Characterization of deep energy level defects in α-Al2O3:C using thermally assisted OSL

Commercially available α-Al₂O₃:C powder was studied for deep energy level defects by a newly suggested method using thermally assisted optically stimulated luminescence (TA-OSL) phenomenon. The method involves simultaneous application of continuous wave optically stimulated luminescence (CW-OSL) as well as thermal stimulation up to 400 °C, using a linear heating rate of 4 K/s. By using this method, two well-defined peaks at 121 °C and 232 °C were observed. These TA-OSL peaks have been correlated to two different types of deeper defects which can be bleached at 650 °C and 900 °C respectively on thermal treatment. These deeper defects, having larger thermal trap depth and relatively lower photoionization cross-section at room temperature for stimulation with blue LED (470 nm), are stable up to 500 °C, so they can store absorbed dose information even if the sample is inadvertently exposed to light or temperature. As only a fraction of signal is bleached during TA-OSL readout, multiple readouts could be performed on an exposed sample using this technique. The dose vs TA-OSL response from deep traps of α-Al₂O₃:C was found to be linear up to 10 kGy, thus extending its application for high dose dosimetry. The value of thermally assisted energy (E_A) associated with these traps in α-Al₂O₃:C has been determined to be 0.268 eV and 0.485 eV respectively and the corresponding values of photoionization cross-section at room temperature (25 °C), for optical stimulation with blue light (470 nm), are 5.82 × 10^?20 and 3.70 × 10^?22 cm², respectively. The process of thermally assisted OSL has been formulated analytically as well as theoretically for describing the temperature dependence of optical cross-section and evaluation of thermally assisted energy associated with deep traps.     

Electron-impact ionization and dissociation of C<Subscript>2</Subscript>D<Superscript>+</Superscript>

Absolute cross sections for electron-impact single ionization, dissociative excitation and dissociative ionization of the ethynyl radical ion (C₂D⁺)^+) have been measured for electron energies ranging from the corresponding reaction thresholds to 2.5 keV. The animated crossed electron-ion beam experiment is used and results have been obtained for the production of C₂D²⁺, C²⁺, C₂⁺_2^+ , CD⁺, C⁺ and D⁺. The maximum of the cross section for single ionization is found to be (2.01 ± 0.02) × 10^-17 cm², at the incident electron energy of 105 eV. Absolute total cross sections for the various singly charged fragments production are observed to decrease by a factor of almost three, from the largest cross-section measured for C⁺, over C₂⁺_2^+ and CD⁺ down to that of D⁺. The maxima of the cross sections are obtained to be (14.5 ± 0.5) × 10^-17 cm² for C₂⁺_2^+, (12.1 ± 0.1) × 10^-17 cm² for CD⁺, (27.7 ± 0.2) × 10^-17 cm² for C⁺ and (11.1 ± 0.8) × 10^-17 cm² for D⁺. The smallest cross section is measured to be (1.50 ± 0.04) × 10^-18 cm² for the production of the doubly charged ion C²⁺. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic energy release distributions of dissociation fragments are seen to extend from 0 to 6 eV for the heaviest fragment C₂⁺_2^+, up to 11.0 eV for CD⁺, 14.2 eV for C⁺ and 11.2 eV for D⁺ products.     

Absolute cross sections and kinetic energy release distributions for electron-impact ionization and dissociation of CD<Superscript>+</Superscript><Subscript>4</Subscript>

Absolute cross sections for electron-impact dissociative excitation and ionization of CD⁺ ₄ leading to formation of ionic products (CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺, C⁺, D⁺ ₃, D⁺ ₂, and D⁺) have been measured. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. Around 100 eV, the maximum cross sections are found to be (3.8±0.2) ×10^-19 cm²,  cm², (7.1±0.8) ×10^-17 cm², (9.0±0.8) × 10^-17 cm² and (3.7±0.4) ×10^-17 cm² for the heavy carbonaceous ions CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺ and C⁺ respectively. For the light fragments, D⁺ ₃, D⁺ ₂, and D⁺, the cross sections around the maximum are found to be (5.0±0.6) ×10^-19 cm², (1.7± 0.2) ×10^-17 cm² and (10.6±1.0) ×10^-17 cm², respectively. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. The analysis of ionic product velocity distributions allows determination of the kinetic energy release distributions which are seen to extend from 0 to 9 eV for heavy fragments, and up to 14 eV for light ones. The comparison of present energy thresholds and kinetic energy release with available published data gives information about states contributing to the observed processes. Individual contributions for dissociative excitation and dissociative ionization are determined for each detected product. A complete database including cross sections and energies is compiled for use in fusion application.     

Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS<Subscript>2</Subscript> single crystal

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS₂ single crystal with a layered structure has been investigated in the frequency range from 5 × 10⁴ to 3.5 × 10⁷Hz. It has been shown that gamma irradiation of the TlInS₂ single crystal with a dose of 10⁴–2.25 × 10⁶ rad leads to a considerable increase in the dielectric loss tangent tanδ, the real part ɛ′ and imaginary part ɛ″ of the complex permittivity, and the ac conductivity σ _ac across the layers. It has been established that, for all gamma irradiation doses, the TlInS₂ single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 10⁷ Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS₂ single crystal results in an increase in the dispersion of tan δ, ɛ′, and ɛ″. It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS₂ single crystal, the density of localized states near the Fermi level N _F increases (from 5.2 × 10¹⁸ to 1.9 × 10¹⁹ eV⁻¹ cm⁻³).     

Thermal depolarisation current study of electron irradiated fluorinated ethylene propylene

Thermally stimulated current (TSC) studies have been reported in the co-polymer of tetrafluoro ethylene and hexafluoropropylene films. Depolarisation current peaks are obtained atα ₁,α ₂ andβ relaxation temperatures of the polymer and the detrapping process is explained on the basis of its molecular motion. A cross-over electron energy of 18 keV is observed where the nature of TSC spectra undergoes a remarkable change. This is explained in relation to the surface states in FEP. Five groups of trapping levels, 0.25±0.08, 0.57±0.10, 1.07±0.1, 1.3±0.25 and 2.3±0.4 eV are obtained.     

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence (EL) quenching in Ge-implanted ITO-SiO₂-Si light-emitting silicon diodes. Good correlation between the negative charge capture in traps of small effective capture cross-sections (σ_t1 ^e=1.7×10^-19 cm² and σ_t2 ^e=4.8×10^-20 cm²) located in SiO₂, and the quenching of the asymmetrical EL line with a maximum intensity at 400 nm has been observed. Similar correlation between the electron capture in traps with extremely small effective capture cross-section (σ_t3 ^e=5×10^-21 cm²) and the quenching of the EL line at 637 nm has been established. A quantitative model for the EL quenching has been developed, which takes into account the modification of the luminescent centers with subsequent electron capture at the newly generated traps. The model shows good agreement between simulation and experimental data. It also demonstrates that small effective capture cross-sections for electron charging during the EL quenching are determined by the probability of the luminescence centers (LCs) being disrupted, and enables one to estimate the Ge concentration associated with the EL at 400 nm. PACS 72.20.Jv; 73.40.Qv; 73.50.Gr     

Trapping centers and their distribution in Tl2In2Se3S layered single crystals

Thermally stimulated current (TSC) measurements have been carried out on Tl₂In₂Se₃S layered single crystals in the temperature range of 10–175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps’ distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps’ distribution can be described as an exponential one. The variations of one order of magnitude in the traps’ density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.     

I. Electron-impact ionization and dissociation of C<Subscript>2</Subscript>H<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and C<Subscript>2</Subscript>D<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections for electron-impact ionization and dissociation of C₂H₂⁺ and C₂D₂⁺ have been measured for electron energies ranging from the corresponding thresholds up to 2.5 keV. The animated crossed beams experiment has been used. Light as well as heavy fragment ions that are produced from the ionization and the dissociation of the target have been detected for the first time. The maximum of the cross-section for single ionization is found to be (5.56 ± 0.03)× 10^-17 cm² around 140 eV. Cross-sections for dissociation of C₂ H₂⁺ (C₂D₂⁺) to ionic products are seen to decrease for two orders of magnitude, from C₂D⁺ (12.6 ± 0.3) × 10^-17 cm² over CH⁺(9.55 ± 0.06) × 10^-17 cm², C⁺ (6.66 ± 0.05) × 10^-17 cm², C₂⁺ (5.36 ± 0.27) × 10^-17 cm², H⁺ (4.73 ± 0.29) × 10^-17 cm² and CH₂⁺ (4.56 ± 0.27) × 10^-18 cm² to H₂⁺ (5.68 ± 0.49) × 10^-19 cm². Absolute cross-sections and threshold energies have been compared with the scarce data available in the literature.     

Polycrystalline GaSb films prepared by the coevaporation technique

Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during deposition. The average surface roughness of the films was estimated to be 10 nm. Grain boundary trap states varied between 2×10¹² and 2.2×10¹² cm^?2 while barrier height at the grain boundaries varied between 0.09 eV and 0.10 eV for films deposited at higher temperatures. Stress in the films decreased for films deposited at higher temperatures. XPS studies indicated two strong peaks located at ～543 eV and ～1121 eV for Sb 3d_3/2 and Ga 2p_3/2 core-level spectra, respectively. The PL spectra measured at 300 K was dominated by a strong peak located ～0.55 eV followed by two low intensity peaks ～0.63 eV and 0.67 eV. A typical n-Si/GaSb photovoltaic cell fabricated here indicated V _oc～311 mV and J～29.45 mA/cm², the density of donors (N _d)～3.87×10¹⁵ cm^?3, built in potential (V _bi)～0.48 V and carrier life time (τ)～28.5 ms. Impedance spectroscopy measurements indicated a dielectric relaxation time ～100 μs.     

Magnetic properties of Co implanted TlInS2 and TlGaSe2 crystals

The results of investigations of magnetic properties of ternary layered TlInS₂ and TlGaSe₂ ferroelectric crystals implanted with 40 keV Co⁺ ions at the fluency of 1.0×10¹⁷ ion cm^?2 are presented. It has been revealed that high-fluence implantation with Co ions results in metal nanoparticle formation in the near-surface irradiated region. The calculations of Co concentration profiles and SEM studies show that the metal nanoparticles are located under the surface at the depth of about 20 nm, and they originate the irregular-shaped bumps on the surface. The Co-implanted samples exhibited superparamagnetic behaviour at high temperatures and ferromagnetic state at temperatures lower than T_b, where T_b is a “blocking temperature” of superparamagnetic nanoparticles. It has been suggested that the observed phenomena can be discussed on the basis of strong magnetic dipolar interaction between Co nanoparticles inside the granular composite film formed as a result of implantation.     

Optically stimulated luminescence (OSL) and thermally assisted OSL in Eu2+ – Doped BaSO4 phosphor

BaSO₄:Eu²⁺ phosphor has been investigated for its photoluminescence (PL), thermoluminescence (TL), TL kinetics, optically stimulated luminescence (OSL) and thermally assisted OSL (TA-OSL) response. PL spectra showed the characteristic emission of Eu²⁺ ion at 375 nm when excited by 320 nm. The luminescence lifetime has been measured as 40 and 628 μs of fast and slow components respectively. The TL parameters such as trap depth (E), frequency factor (s) and the order of kinetics (b) are determined. The phosphor is found to be 6 and 4 times more sensitive than CaSO₄:Dy and α-Al₂O₃:C, respectively, in TL mode. However, its OSL sensitivity is 75% of α-Al₂O₃:C. It is found to possess three OSL components having photoionization cross-sections of 1.4 × 10⁻¹⁷, 1.2 × 10⁻¹⁸ and 5.2 × 10⁻¹⁹ cm² respectively. The temperature dependence of OSL studies showed that integrated TA-OSL signal increases with stimulation temperature between 50 and 250 °C, while between 260 and 450 °C the signal intensity decreases. This behavior is interpreted to arise from competing effects of thermal assistance (activation energy E_A = 0.063 ± 0.0012 eV) and depletion of trapped charges. This increase of OSL at elevated temperature can be employed for enhancing the sensitivity of phosphor for radiation dosimetry.     

用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心

采用MOS方法,在液相外延生长的n型In_0.75Ga_0.25As_0.58P_0.42混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10^-16cm²和3.8×10^-12cm²。关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。 关键词：     

注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：     

TL and OSL studies on lithium borate single crystals doped with Cu and Ag

Lithium borate (LBO) single crystals doped with Cu and Ag (0.25 mol% each) (Li₂B₄O₇:Cu,Ag) are grown by the Czochralski method. The thermoluminescence readout on Li₂B₄O₇:Cu,Ag crystals showed three glow peaks at～375, 441 and 516 K for the heating rate of 1  K/s. The thermoluminescence sensitivity of the grown Li₂B₄O₇:Cu,Ag single crystals is found to be 5 times TLD-100 and a linear dose response in the range 1 mGy to 1 kGy. The glow curve deconvolution reveals nearly first order kinetics for all the three peaks with trap depths 0.77, 1.25 and 1.34 eV respectively and corresponding frequency factors 1.6×10⁹, 1.3×10¹³ and 6.8×10¹¹ s^?1. The continuous wave optically stimulated luminescence (CW-OSL) measurements were performed on the LBO:Cu,Ag single crystals using blue light stimulation. The traps responsible for the three thermoluminescence peaks in Li₂B₄O₇:Cu,Ag are found to be OSL sensitive. The qualitative correlation between TL peaks and CW-OSL response is established. The photoluminescence studies show that in case of co-doping of Ag in LBO:Cu the emission at 370 nm in Cu states dominates over the transitions in Ag states implying doping of Ag plays a role as sensitizer when co-doped with Cu and increases overall emission.     

Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals

Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl₂Ga₂Se₃S layered single crystals in the temperature range of 10-260 K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers.