Low temperature photoconductivity of Pb1?xSnxTe?In? films at millimeter wavelengths

Photoconductivity of single crystal Pb_1−xSn_xTe〈In〉, (0.24≤x≤0.25), films at 4.2K in the wavelength region 4÷5 mm and magnetic fields up to 8 T was studied. Preparation technology of the films with high photoconductivity (P_FEP ≤ 10⁻¹² W×Hz^1/2) and photoresponsiveness (τ ≤ 10⁻⁶ s), as well as the measurements procedure are described in the paper. Also the mechanism of photoconductivity is discussed.     

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

Amorphous thin film Ge₁₅Te_85−x Sn _x (1≤x≤5) and Ge₁₇Te_83−x Sn _x (1≤x≤4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge₁₅Te_85−x Sn _x and Ge₁₇Te_83−x Sn _x amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge₁₅Te_85−x Sn _x and Ge₁₇Te_83−x Sn _x thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Dielectric properties of epitaxial Pb1−x Sn x Te layers at microwave frequencies

The dielectric properties of epitaxial Pb_1−x Sn _x Te layers are investigated at 9 GHz in a composition range betweenx=0 and 0.225. The samples are characterized by fairly low carrier concentrations between 1.4×10¹⁶ and 32×10¹⁶ cm⁻³. Data of the static dielectric constant (ε ^s ) are obtained at temperatures of 77 and 300 K. The results of ε ^s are 25% to 100% higher compared to previous measurements in bulk material from other authors. The observed higher values of ε ^s in the investigated samples may be due to the reduced number of point defects in epitaxially grown Pb_1−x Sn _x Te layers. The model of Kawamura which predicts a dependence of ε ^s on the effective band gap cannot be verified.     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

One-dimensional ionic conduction in solid Ag2 Tl6I10

The ionic and electronic conductivities of Ag₂Tl₆I₁₀ single crystals have been studied as a function of crystallographic orientation and temperature from 20 to 135°C. EMF as well as AC and DC techniques have been employed. The highly anisotropic material is predominantly an Ag⁺-ion conductor parallel toc-direction, with the Ag⁺ ions moving through linear channels that are not interconnected. The conductivity σ_‖c =1.6×10⁻⁷Ω⁻¹cm⁻¹ at 25°C, with an activation enthalpy for σ_‖c of 0.38 eV. The conduction perpendicular toc-direction has been found to be predominantly electronic with a value of σ_⊥c =3×10⁻⁹Ω⁻¹cm⁻¹ at 25°C and an activation enthalpy for σ_⊥c of 0.64 eV. This is the first observation of one-dimensional Ag⁺ conduction and this type of orientation-dependent change from ionic to electronic conduction. On leave from Institute of Physics, Academia Sinica, Peking, China.     

Dielectric spectroscopy of PbZr1 ? xTixO3 solid solutions (0.495 ≤ x ≤ 0.51) in a temperature range of 100–300 K at frequencies from 1 × 10?2 to 2 × 107 Hz

The behavior of the relative permittivity ɛ/ɛ₀ of PbZr_{1 − x} Ti _x O₃ (PZT) solid solutions (0.495 ≤ x ≤ 0.51) in the temperature range of 100–300 K at frequencies from 1 × 10⁻² to 2 × 10⁷ Hz was investigated. Diffuse, strongly relaxing maxima at T = 230−260 K (x = 0.495−0.505) and 150–160 K (x = 0.510) were observed in the PZT studied. The relaxation processes are well described by the Vogel-Fulcher law, and the dielectric spectra are approximated by the Cole-Cole formula.     

Kinetic properties of p-Mg2SixSn1 ? x solid solutions for x < 0.4

The results of a study of Mg₂Si _x Sn_{1 − x} solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–700 K) and carrier concentrations (10¹⁸ to 6 × 10²⁰ cm⁻³). These measurements were used to derive the band structure parameters (band gap, hole mobility, hole effective mass). The effective mass of holes was found to grow strongly with an increase in their concentration.     

Measurement of the proton structure function F 2 at low x and low Q 2 at HERA

We report on a measurement of the proton structure functionF ₂ in the range 3.5×10⁻⁵≤x≤4×10⁻³ and 1.5 GeV²≤Q ²≤15GeV² at theep collider HERA operating at a centre-of-mass energy of √s=300GeV. The rise ofF ₂ with decreasingx observed in the previous HERA measurements persists in this lowerx andQ ² range. TheQ ² evolution ofF ₂, even at the lowestQ ² andx measured, is consistent with perturbative QCD. supported by EU HCM contract ERB-CHRX-CT93-0376     

Free carrier concentration and conductivity in chlorine doped lead telluride

Plasma resonance in the IR reflection spectra is used to measure the concentration and relaxation time of free charge carriers along with the conductivity in PbTe_{1 − x} Cl _x solid solutions. It is found that with increasing the chlorine concentration, the electron concentration and conductivity increase and reach saturation at x = 0.03 (n = 5.5 × 10¹⁹ cm⁻³, σ = 3750 Ohm⁻¹ · cm⁻¹). The relaxation time decreases with increasing the chlorine concentration and reaches the minimum value of 2.2 × 10⁻¹⁴ s at x = 0.03; then, it almost does not change.     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Enhancement of minority carrier lifetime in GaAs1? x P x ( x =0.4; 0.65) by nitrogen implantation

Minority carrier lifetimes in nitrogen implanted GaAs_1-x P _x (x=0.4; 0.65) were measured at 77K by an optical phase shift method as a function of nitrogen dose and annealing temperature in order to investigate the dependence of the lifetime on the concentration of nitrogen isoelectronic traps. A large increase in the lifetime was observed after nitrogen implantation followed by annealing at and above 800°C. The maximum lifetimes were 22ns for GaAs_0.35P_0.65 and 6.7 ns for GaAs_0.6P_0.4. They were obtained by implantation to a dose of 5×10¹³ cm⁻² in GaAs_0.35P_0.65 and 10¹³ cm⁻² in GaAs_0.6P_0.4. The lifetime after nitrogen implantation followed by annealing was longer by a factor of 6–7 than that of the unimplanted sample.     

EPR studies of Cu2+ and V4+ ions in phosphate glasses

Two lead-phosphate glass systems doped with both copper and vanadium ions in different ratios were studied by EPR (electron paramagnetic resonance) method. EPR spectra and parameters (g_‖ = 2.44, g_⊥ = 2.08 andA _‖ = 117.6 · 10⁻⁴ cm⁻¹) obtained for x(CuO · V₂O₅)(l−x)[2P₂O₅ · PbO] glasses withx ≤ 10 mol% suggest a tetrahedral (Td) coordination of Cu²⁺ ions and not a tetragonally elongated octahedron as has been assumed in previous works. The ground state of the paramagnetic electron is thed _xy copper orbital with a 4p_z contribution of 6%. For 20 ≤x ≤ 40 mol% a broad line (ΔB = 307 G) characteristic for clustered ions appears atg = 2.18. The V⁴⁺ ions are evidenced only in the spectra of x(CuO · 2V₂O₅)(1 −x)[2P₂O₅ · PbO] glasses and the resonance parameters suggest a pentacoordinated C_4v local symmetry for these ions. The hyperfine structures characteristic for Cu²⁺ and V⁴⁺ ions disappear for 10 ≤x ≤ 40 mol% due to the mixed exchange Cu²⁺−V⁴⁺ pair formation in these glasses.     

Transmission spectra of epitaxial layers of Pb1 ? xEuxTe (0 ≤ x ≤ 0.37) solid solutions in the frequency range 7–4000 cm?1

The spectra of epitaxial Pb_{1 − x} Eu _x Te (0 ≤ x ≤ 0.37) solid solution layers grown on BaF₂ and Si substrates have been investigated over a wide frequency range 7–4000 cm⁻¹ at temperatures of 5–300 K. Apart from the phonon and impurity absorption lines, the absorption in a local mode in PbEuTe layers of substrates and buffer layers has been observed in the frequency range 110–114 cm⁻¹. As the temperature decreases from 300 to 5 K, the transverse phonon mode softens from 33.0 to 19.5 cm⁻¹.     

The study of lithium fast ion conductors of Li3xLa0.67−xScyTi1−2yNbyO3 system

Perovskite-type lithium fast ion conductors of Li_3xLa_0.67−xSc_yTi_1−2yNb_yO₃ system were prepared by solid state reaction. X-Ray powder diffraction shows that perovskite solid solution form in the ranges of x=0.10, y≤0.10. AC impedance measurements indicate that the bulk conductivities and the total conductivities are of the order of 10⁻⁴ S·cm⁻¹ and 10⁻⁵ S·cm⁻¹ at 25 °C respectively. The compositions have low bulk activation energies of about 17 kJ/mol in the temperature ranges of 298 – 523 K and total activation energies of about 37 kJ/mol in the temperature ranges of 298 – 523 K.     

Implantation doping of germanium with Sb,As, and P

The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD _Sb=1.8×10⁻¹³ cm²/s,D _As=9×10⁻¹⁴ cm²/s andD _P=4×10⁻¹⁴ cm²/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO₂ layer.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

EPR and Optical Absorption Studies of Cu2+-Doped Bis(l-Asparaginato)Mg(II)

The electron paramagnetic resonance study of Cu²⁺-doped bis(l-asparaginato)Mg(II) is performed at room temperature. Two magnetically non-equivalent sites for Cu²⁺ are observed. The spin-Hamiltonian parameters evaluated by fitting spectra to the crystalline field of rhombic symmetry are as follows: g _x  = 2.0420 ± 0.0002, g _y  = 2.0808 ± 0.0002, g _z  = 2.3600 ± 0.0002, A _x  = (99 ± 2) × 10⁻⁴ cm⁻¹, A _y  = (108 ± 2) × 10⁻⁴ cm⁻¹, A _z  = (140 ± 2) × 10⁻⁴ cm⁻¹. The ground state wave function of Cu²⁺ is also determined. The g-anisotropy is estimated and compared with the experimental value. Further, with the help of optical study the nature of bonding of a metal ion with different ligands in the complex is discussed.     

Electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh1−x Ptx)2 and U(In1−x Snx)3

The electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ has been studied by the x-ray K line-shift method. It has been found that the occupation of the Rh 4d-shell in Eu(Rh_1−x Pt_x)₂ is higher than that in the metal, and that it grows with decreasing Eu valence (i.e., with increasing 4f-shell occupation). The electronic structure of Pt, In, and Sn in Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ does not depend on the Eu and U valence and is practically the same as in the metals. These features in the electronic structure of Rh, Pt, In, and Sn in Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ suggest that the electron released in the f ⁿ → f ⁿ −1+e transitions, rather than transferring to the common conduction band, remains localized at the Eu and U atoms. Fiz. Tverd. Tela (St. Petersburg) 41, 1529–1531 (September 1999)     

Ion-electron transfer in solid solutions Rb2 ? 2xFe2 ? xPxO4

The rubidium monoferrite RbFeO₂-based solid solutions with the composition Rb_{2 − 2x} Fe_{2 − x} P _x O₄ have been synthesized, and their crystal structure and the temperature and concentration dependences of the total and electron conductivities have been studied. The introduction of P⁵⁺ ions has been found to sharply decrease the electron conductivity that prevails in pure rubidium monoferrite and, at the same time, to increase the ionic conductivity. The latter becomes dominant as the phosphorus concentration increases. The maximum rubidium-cation conductivity of the materials under study is ∼3 × 10⁻² S/cm at 300°C and ∼3 × 10⁻¹ S/cm at 700°C. The results have been compared with the previously obtained data for similar solid solutions based on rubidium monogallate and monoaluminate.