Transport and magnetotransport properties of Mn-doped InxGa1−xAs/GaAs quantum well structures

We report on the transport, magnetotransport and magnetic properties of In_0.17Ga_0.83As quantum well in GaAs δ-doped by Mn. At low temperatures, the anomalous Hall effect was observed which detects the spin-polarized carriers. Negative magnetoresistance was found at low temperatures, which became positive at high temperature.     

Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure

Abstract

Measurements of the photoluminescence (PL) of strained In_0.2Ga_0.8As/GaAs and In_0.15Ga_0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (L_Z). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In_0.53Ga_0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well.     

Optical properties of GaNAs/GaAs triple quantum well structures

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.     

InGaAs/GaAs量子链的光学特性研究

研究了InGaAs/GaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程. 关键词： InGaAs/GaAs 量子点 量子链     

Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures

Il Nuovo Cimento D - We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The...     

Scattering of excitons by free carriers in semiconducting quantum well structures

We have theoretically investigated the scattering of excitons by free electrons and holes in a two-dimensional semiconducting quantum well system. The scattering cross-sections have been calculated using the Born approximation for both the elastic and inelastic scattering of the excitons by the free carriers. The threshold for inelastic scattering is increased over the value in a bulk semiconductor because of the enhancement of the exciton binding energy by its confinement. The behavior of the scattering cross-section as a function of the energy of relative motion of the free carriers and the excitons is different than in the bulk and the cross-section is a more sensitive function of the ratio of the electron and hole masses than in the bulk. In fact, the scattering of light hole excitons is suppressed relative to that of heavy hole excitons by several orders of magnitude.     

Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures

Lateral and vertical ordered one-dimensional quantum structures, i.e. InGaAs/GaAs(001) quantum dot chains and quantum wires, have been obtained using molecular beam epitaxy. It was found that the InGaAs wires or dot chains sit on two-dimensional wetting layers and run along the [-110] direction, as the result of anisotropic strain and in-plane adatom diffusion. This anisotropic nature produces a model system for studying the electronic properties of one-, two-, and three-dimensional quantum confinements and related optical responses. The strain anisotropy is of importance in determining the electronic states of the quantum structures and the surrounding strained barrier. The strain-induced effects, such as change of band-gap and splitting of heavy–light hole states, were studied experimentally and theoretically. Optical anisotropy of these quantum structures is also discussed.     

InGaAs/GaAs photorefractive multiple quantum well device in quantum confined Stark geometry

We have demonstrated photorefractive InGaAs/GaAs multiple-quantum-well devices in the quantum confined Stark geometry. A four-wave-mixing diffraction efficiency up to 0.3% is obtained at a wavelength of 949 nm. Proton implantation strongly reduces the maximum diffraction efficiency although it saturates the diffraction efficiency at smaller grating period comparing to as-grown device. We have also observed higher order diffractions. It is found that the space-charge field changes its pattern temporally from a sinusoidal pattern to a rectangular one with decreasing its modulation depth. Received: 7 December 2000 / Published online: 27 April 2001     

Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of ~0.2%.     

Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the s, p-d exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (T < 20 K).     

Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures

The paper presents the photoluminescence (PL) study of InAs quantum dots (QDs) embedded in the asymmetric GaAs/In_xGa_1?xAs/In_0.15Ga_0.85As/GaAs quantum wells (QWs) with the different compositions of capping In_xGa_1?xAs layers. The composition of the buffer In_0.15Ga_0.85As layer was the same in all studied QD structures, but the In content (parameter x) in the capping In_xGa_1?xAs layers varied within the range 0.10–0.25. The In concentration (x) increase in the In_xGa_1?xAs capping layers is accompanied by the variation non-monotonously of InAs QD emission: PL intensity and peak positions. To understand the reasons of PL variation, the PL temperature dependences and X ray diffraction (XRD) have been investigated. It was revealed that the level of elastic deformation (elastic strain) and the Ga/In interdiffusion at the In_xGa_1?xAs/InAs QD interface are characterized by the non-monotonous dependences versus parameter x. The physical reasons for the non-monotonous variation of the elastic strains and PL parameters in studied QD structures have been discussed.     

Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system

A ferromagnetic ordering with a Curie temperature of 50 K of fifteen layer of InGaMnAs/GaAs multi quantum wells (MQWs) structure grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE) was found. It is likely that the ferromagnetic exchange coupling of sample with Curie temperature of 50 K is hole-mediated resulting in Mn substituting In or Ga sites. Temperature and excitation power dependent PL emission spectra of InGaMnAs MQWs sample grown at temperature of 170 °C show that an activation energy of Mn ion on the first quantum confinement level in InGaAs quantum well is 36 meV and impurity Mn is partly ionized. It is found that the activation energy of 36 meV of Mn ion in the QW is lower than the activation energy of 110 meV for a substitutional Mn impurity in GaAs. These measurements provide strong evidence that an impurity band existing in the bandgap due to substitutional Mn ions and it is the location of the Fermi level within the impurity band that determines Curie temperature.     

The photomagnetic effect in Mn delta-doped heteronanostructures with an InGaAs/GaAs quantum well

The influence of embedding a Mn delta layer into heteronunostructures with an InGaAs/GaAs quantum well on the photomagnetic spectra was investigated. The recombination parameters of a number of model structures were determined by the photomagnetic effect and planar photoconduction at high illumination.     

Post-growth tailoring of the optical properties of GaAs/AlGaAs quantum well structures

In this paper we describe a method for performing post-growth bandgap engineering in the GaAs/AlGaAs quantum well system. The method used is impurity-free vacancy diffusion. Using both single and multiple quantum well data we show that this allows blue shifts in the optical properties, while retaining both their distinctive excitonic and electrical characteristics. The electrical response is modelled and no comparative degradation of the quantum confined Stark effect is predicted, and this is confirmed experimentally. Possible applications of this technique are mentioned.     

Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density

We studied the thermal stability and interdiffusion of InGaAs/GaAs and GaAsSb/GaAs single quantum wells as a function of temperature for both Be and Si doping at various doping concentrations. The interdiffusion was monitored using the photoluminescence from the ground states of the valence- and conduction-band quantum wells. Using a Green's function method to solve the diffusion equation, assuming Fick's law behaviour, the evolution of the well shape during annealing was determined, and Schrödinger's equation was solved for this well shape to provide the ground-state energy levels of the system using the diffusion constant as the only fitting parameter. The validity of this model as applied to both systems is discussed.Strained Layer Structures Research Group.     

Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T ≈ 30 K as the temperature increased.     

Exciton linewidth due to scattering from free carriers in semiconducting quantum well structures

The contribution to the exciton linewidth in semiconducting quantum well structures due to the scattering of excitons by free carriers is calculated. It is found that this contribution becomes very important in limiting the exciton linewidth when a high density of free carriers is present or at low temperatures where the scattering of the excitons by optical and acoustic phonons is reduced. This contribution to the linewidth in quantum well structures is found to increase with the free carrier concentration and to extremely broaden and exciton peak at high carrier concentrations. At lower carrier concentrations, where the carriers behave as a nondegenerate gas of particles, the contribution to the exciton linewidth due to scattering by free carriers increases with temperature.     

Electro-optic effects in GaAs/AlGaAs parabolic quantum well structures

We report on a systematic experimental and theoretical investigation of the interband electroabsorption in GaAs/AlGaAs parabolic quantum well (PQW) structures. In our experiments, we performed transmission and reflectance measurements using a sensitive double modulation technique. The measurements were carried out on p–i–n diode type PQW samples with two different well widths. In the sample with the narrow PQW, the discrete structure of the interband subband transitions can be resolved in the electroabsorption spectra. In the sample with the wide PQW, and therefore a small subband spacing, these transitions can no longer be resolved individually due to the broadening. Their superposition, however, results in a red-shifting, quasi-linear pattern in the electroabsorption spectra, which is modulated by the blue-shifting, non-linear fan of the ‘ arabolic Franz–Keldysh effect’. The experimental results are in very good agreement with calculated single-particle absorption spectra based on a simple harmonic oscillator model.     

Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well

We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numerical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilities limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.