Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence

The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200 mm and 300 mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the μm or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of the structures, they were provided with an additional silicon nitride layer. Four structure types of different bar width and density parameters on two 200 mm silicon wafers were investigated. The alignment procedure developed in the present work consists of three main steps and allows for distinct excitation of multiple sidewalls of one kind. Information about depth-dependent sidewall contamination, layer thickness and composition can be obtained by this approach. First results obtained on these test structures demonstrate the application potential of this new technique. In principle, depth-dependent chemical speciation should also be possible using GIXRF in combination with near edge absorption X-ray fine structure (NEXAFS).     

Total reflection X-ray fluorescence and grazing incidence X-ray spectrometry — Tools for micro- and surface analysis. A review

A review of Total Reflection X-ray Spectrometry and related methods covering literature of four decades is presented. History, theory, instrumentation, sample preparation, and applications are summarized and some examples are given. New developments and trends are discussed with respect to emerging nano-technologies in all fields of sciences.     

The interaction between atoms of Au and Cu with clean Si(1 1 1) surface: A study combining synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations

In order to evaluate the interactions between Au/Cu atoms and clean Si(1 1 1) surface, we used synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations. Optimized geometries and energies on different adsorption sites indicate that the binding energies at different adsorption sites are high, suggesting a strong interaction between metal atom and silicon surface. The Au atom showed higher interaction than Cu atom. The theoretical and experimental data showed good agreement.     

Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence

A new method suitable for depth profiling of shallow layers on different materials is presented. It is based on a soft and planar ion sputtering combined with differential weighing, total-reflection X-ray fluorescence (TXRF) spectrometry and Tolansky interferometry. By means of a stepwise repetition of these techniques it is possible to determine both density/depth and concentration/depth profiles. The respective quantities are expressed in terms inherent only to the sample and traceable to the SI-units or subunits gram, nanometer and mole. It is a unique feature of this method that density/depth profiles can directly be obtained from measurements without any calibration or theoretical approximation. The method is applied to a Si wafer implanted with Co ions of 25 keV energy and a nominal dose of 1×10¹⁶ cm⁻². The depth resolution is shown to be <3 nm while a total depth of some 100 nm can be reached. The concentration/depth profile is compared with RBS measurements, wet-chemical etching plus TXRF and Monte Carlo simulations. In view of the fact that only similar but not exactly the same samples have been examined by these methods, a good correspondence can be noticed.     

Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 10⁹ atoms/cm² level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with ~ 4 μm in diameter are formed and unexpectedly they are dented from the top surface level.     

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.     

Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY II

Synchrotron radiation induced TXRF allows the nondestructive investigation of low Z contaminations on Si wafer surfaces at trace levels required by the semiconductor industry. The PTB (Physikalisch Technische Bundesanstalt) U180 undulator beamline at BESSY II, equipped with a plane grating monochromator ensuring an energy resolving power E/ΔE between 500 and 5000, can be operated either in wiggler mode for photon energies up to 1.7 keV to excite Al, Mg and Na efficiently, or in undulator mode, i.e. using one of the first odd U180 harmonics, to obtain intensive low energy radiation below 0.7 keV to excite carbon, nitrogen and oxygen. The specific feature of the beamline is its high spectral purity that allows for fundamental investigations. The TXRF wafer chamber of the Atominstitut was used for the experiments with a sidelooking Si(Li) detector with the wafer arranged vertically to take advantage of the linear polarization for background reduction. The energy dependence of the resonant Raman scattering, which is a limiter for the determination of Al at ultra trace levels excited with energies just below the Si absorption edge was studied as well as the influence of the incidence angle on the Raman peak. Droplet samples containing boron were measured and the detection limit of 3 ng determined. A single Carbon layer (5 nm) and a C–Ni–C multilayer sample on a Si wafer were characterized and it was shown that the thickness and density of these layers could be determined.     

X-ray fluorescence spectrometry on paper characterization: A case study on XVIII and XIX century documents

Paper documents from XVIII and XIX centuries were analyzed by energy dispersive X-ray fluorescence. The presence of Co (400 µg g^− 1), Ni (300 µg g^− 1), As (2000 µg g^− 1) and Bi (200 µg g^− 1) in Dutch papers and a Hespe watermarked paper allowed distinguishing them from the rest of the papers. The elemental composition of the ink present in these documents was also studied with the same technique and it was concluded that these elements could not be originated from ink dissemination. Strong positive Spearman correlations between Co, Ni, As and Bi were found in all Dutch and Hespe watermarked papers. Potassium and Ca are the predominant elements in all analyzed papers. Their concentration levels also allowed differentiating between Dutch and Hespe papers and the rest of the papers. Other elements such as Ti, Fe, Cu, Zn, Ba and Pb were also found. In this work a bibliographic research about the possible origin of each one of the mentioned elements present in the papers is also reported.     

First combined total reflection X-ray fluorescence and grazing incidence X-ray absorption spectroscopy characterization of aeolian dust archived in Antarctica and Alpine deep ice cores

Aeolian mineral dust archived in polar and mid latitude ice cores represents a precious proxy for assessing environmental and climatic variations at different timescales. In this respect, the identification of dust mineralogy plays a key role. In this work we performed the first preliminary X-ray absorption spectroscopy (XAS) experiments on mineral dust particles extracted from Antarctic and from Alpine firn cores using grazing incidence geometry at the Fe K-edge. A dedicated high vacuum experimental chamber was set up for normal-incidence and total-reflection X-Ray Fluorescence and Absorption Spectroscopy analyses on minor amounts of mineral materials at the Stanford Synchrotron Radiation Laboratory. Results show that this experimental technique and protocol allows recognizing iron inclusion mineral fraction on insoluble dust in the 1–10 µg range.     

A simple method for evaluation of optical scattering effect on the Raman signal of a sample beneath an Intralipid layer

Optical scattering by biological tissues largely deteriorates the efficiency of the Raman analysis of these tissues. To evaluate the effect of scattering on Raman depth profiles (RDPs), we developed a simple method using a thin-layered sample mimicking real tissues and a conventional Raman microscope. The sample comprised three layers: a silicon wafer, a thin aqueous film containing Intralipid particles as scatters, and a fused silica window; this design was used to mimic real skin tissues quantitatively. The multi-scattering effect, which deteriorates spatial resolution, was clearly observed as broadening of RDPs. Decrease in Raman intensity was also systematically examined as a function of both the concentration of the Intralipid particles and depth of the film, and evaluated using Lambert-Beer's law. The abovementioned observations can be quantitatively explained on the basis of the scattering cross-section and concentration of the Intralipid particles, indicating that the method is useful for the quantification of the deterioration of Raman measurements due to optical scattering.     

A new method for depth-profiling of shallow layers in silicon wafers by repeated chemical etching and total-reflection X-ray fluorescence analysis

A novel method of depth-profiling was applied to a Co-implanted silicon wafer with a dose of nearly 1×10¹⁶ Co atoms cm⁻². A rectangular section (3.4 cm²) was etched repeatedly by oxidation with hydrogen peroxide (30%) and sequential dissolution of each oxidized ‘sublayer’ with a solution of hydrofluoric acid (4%). The mass of the etched oxidized sublayers was determined by differential weighing and the loaded solutions as well as the freshly etched surfaces were analyzed by total-reflection X-ray fluorescence (TXRF). The relative concentration of Co and Si atoms was determined as a function of the depth of each sublayer. These quantities were traced back to the SI-units g g⁻¹ and m by a balance, a magnifier and a certified standard solution or suspension. Two depth-profiles were derived and error bars were calculated to evaluate the precision. Both profiles match quite well and their integration gives dose values which differ by only 8%. The depth resolution of the new method is 0.6 nm at best; the detection limit is 0.003% or 1.5×10¹⁸ Co atoms cm⁻³ for a 2-inch silicon wafer.     

Fabrication of new polypyrrole/silicon nitride hybrid materials for potential applications in electrochemical sensors: Synthesis and characterization

In this research, an efficient fabrication process of conducting polypyrrole (PPy)/silicon nitride (Si₃N₄) hybrid materials were developed in order to be employed as transducers in electrochemical sensors used in various environmental and biomedical applications. The fabrication process was assisted by oxidative polymerization of pyrrole (Py) monomer on the surface of Si/SiO₂/Si₃N₄ substrate in presence of FeCl₃ as oxidant. To improve the adhesion of PPy layer to Si₃N₄ surface, a pyrrole-silane (SPy) was chemically bonded through silanization process onto the Si₃N₄ surface before deposition of PPy layer. After Py polymerization, Si/SiO₂/Si₃N₄-(SPy-PPy) substrate was formed. The influence of SPy concentration and temperature of silanization process on chemical composition and surface morphology of the prepared Si/SiO₂/Si₃N₄-(SPy-PPy) substrates was studied by FTIR and SEM. In addition, the electrical properties of the prepared substrates were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). It was found that the best silanization reaction conditions to get Si/SiO₂/Si₃N₄-(SPy-PPy) substrate with high PPy adhesion and good electrical conductivity were obtained by using SPy at low concentration (4.3 mM) at 90°C. These promising findings open the way for fabrication of new hybrid materials which can be used as transducers in miniaturized sensing devices for various environmental and biomedical applications.     

Cobalt thin films on gold: A new reference material for the quantification of cobalt phthalocyanine and cobalt porphyrin modified gold electrodes with synchrotron radiation micro X-ray fluorescence spectroscopy

New reference materials consisting of cobalt thin films on gold were prepared by sputter deposition. The thickness and homogeneity of the films were characterized using synchrotron radiation micro-XRF. The samples can be used as reference materials to quantify cobalt phthalocyanine and cobalt porphyrin modified gold electrodes which have been analyzed with synchrotron radiation micro-XRF.     

A new simple preparation of platinum-nickel alloy nanoparticles and their characterization as an electrocatalyst for methanol oxidation

Pt-Ni alloy nanoparticles were produced by casting 2 or 10 mM H₂PtCl₆ solutions on a Ni column. The apparent particle size for the resultant Pt-Ni alloys increased with the concentration of the H₂PtCl₆ solution, while the content of Pt in the alloy decreased. The potential sweeps of 5 cycles in an H₂SO₄ aqueous solution for Pt-Ni (2 mM)/Ni and Pt-Ni (10 mM)/Ni electrodes led to electrochemical behavior similar to a polycrystalline Pt electrode, suggesting the formation of a few thin Pt layers on each Pt-Ni alloy surface. In electrochemical measurements, both Pt-Ni/Ni electrodes showed more negative onset potential of methanol oxidation and slower degradation of oxidation current of methanol than the polycrystalline Pt electrode. X-ray photoelectron spectroscopy of both Pt-Ni/Ni electrodes showed the shift of Pt4f peaks to a higher binding energy, suggesting that the increase in the d vacancy in the balance band 5d orbital of Pt contributed to the improved electrocatalytic activity and durability of the Pt-Ni/Ni electrodes.     

A pattern recognition based fluorescence quenching assay for the detection and identification of nitrated explosive analytes

Herein we report a differential array of micelle-solubilized fluorophores for the detection and identification of small nitrated analytes, such as the explosives TNT, tetryl, RDX and HMX. The quenching ability of the analytes can be used to correlate their analyte identity, wherein the quenching patterns generated from the differential array are used in linear discriminant analysis (LDA). LDA results in a well-clustered two-dimensional plot, and a jack-knife analysis of the data suggests that this system can be used to identify unknown samples of analyte with 96 % accuracy and with a detection limit of 19 muM.     

电荷转移配合物薄膜制备方法和结构表征的研究进展

回顾了与Langmuir-Blodgett(LB)技术有关的电荷转移配合物薄膜的各类制备方法、结构表征结果,并比较了制备方法对薄膜结构的影响.例如,将LB膜C18H37TCNQ(电子受体)插入到电子给体3,3’,5,5’-tetramethylbenzidine(四甲基联苯胺, TMB)的石油醚溶液中进行掺杂,制备了TMB•C18H37TCNQ电荷转移配合物薄膜.在这种薄膜中,给体和受体以面对面的方式堆积,两者的环平面与基片平面接近垂直.而采用硬脂酸和C18H37TCNQ的混合LB膜通过类似的掺杂路线制备的TMB•C18H37TCNQ薄膜的结构发生了一些变化,例如其长的烃链C18H37更加垂直于基片平面.通过比较以前的各种实验结果可以得出以下结论:电荷转移配合物的结构可以通过制备方法得到控制.     

Influence of structural variation of salamo‐based ligand on supramolecular architectures,Hirshfeld analyses,and fluorescence properties of new tetranuclear NiII complexes

Two new tetranuclear Ni^II complexes, [Ni₄(L¹)₂(N₃)₄(MeOH)₂]·CH₃COCH₃ (1) and [Ni₄(L²)₂(N₃)₄(MeOH)₂]·4CH₃COCH₃ (2) , were synthesized using NiCl₂·6H₂O, NaN₃, and asymmetric salamo‐based ligands H₂L¹ and H₂L², respectively. The structural characterization was made by elemental analyses, infrared (IR) and ultraviolet‐visible (UV‐vis) spectra, and X‐ray diffraction analyses. The results of X‐ray diffraction analyses show that the Ni^II atoms in complexes 1 and 2 are distorted octahedral geometries. Interestingly, the degree of distortion of the ligands in complexes 1 and 2 is different, which indicates that the interaction of Ni^II ions on different ligands is different. Meanwhile, the investigation of molecular packing by employing the Hirshfeld surface analysis exhibits that the percentages of C–H/H–C, O–H/H–O, and H–H/H–H contacts of the complex 1 (or 2 ) are calculated to be 17.7%, 7.9%, and 53.7% (or 18.8%, 13.8%, and 52.5%), respectively, where the H–H/H–H contacts have the characteristics of strong contacts whereas the O–H/H–O hydrogen bonds are considerably weak, and the studies on fluorescence properties further confirm the Ni^II atoms have different binding abilities to the different ligands.     

A method for characterization of sea surface microlayer based on monolayer properties in presence and absence of phospholipids

Electrochemical impedance spectroscopy, ac voltammetry and fractal analysis were used to characterize model compounds, compound mixtures and extracted samples of sea surface microlayer (ssm) und underlying water (ulw). The reasons for carrying out this work were to use the scientific basis of these characterizations in future on-line analytical procedures of ssm. The mercury (Hg) drop electrode uncoated and coated with a monolayer of dioleoyl phosphatidylcholine (DOPC) was used as an experimental basis for investigation of the major sea surface film forming material. Firstly, the interaction of the uncoated and DOPC coated Hg electrode with model water insoluble compounds of increasing polarity was investigated. The compounds studied in order of increasing polarity were: nonadecane, stearic acid, cholesterol and cardiolipin. Subsequently the electrochemical response of the system to different ssm extracts was compared to signals observed with model compounds to demonstrate method selectivity. From the electrochemical results, it is observed that both the molecular structure and polarity of the investigated compounds have a role in their interaction with the uncoated and DOPC coated electrode. In the fractal analysis the increase above 2 of fractal dimension D imparted to the DOPC layer is related to the degree of apolarity of the additive model compound. Consistent with this, the more apolar hexane extracted ssm 2 imparts a fractal dimension D value of 2.45 when incorporated in DOPC layers. The electrochemical response to the ssm and ulw follows that characteristic of sterol compounds.