Variational approach for the effects of periodic modulations on the spectrum of massless Dirac fermion

In the variational framework, we study the electronic energy spectrum of massless Dirac fermions of graphene subjected to one-dimensional oscillating magnetic and electrostatic fields centered around a constant uniform static magnetic field. We analyze the influence of the lateral periodic modulations in one direction, created by these oscillating electric and magnetic fields, on Dirac like Landau levels depending on amplitudes and periods of the field modulations. We compare our theoretical results with those found within the framework of non-degenerate perturbation theory. We found that the technique presented here yields energies lower than that obtained by the perturbation calculation, and thus gives more stable solutions for the electronic spectrum of massless Dirac fermion subjected to a magnetic field perpendicular to graphene layer under the influence of additional periodic potentials.     

Finite-temperature density instability at high landau level occupancy

We study here the onset of charge density wave instabilities in quantum Hall systems at finite temperature for Landau level filling nu>4. Specific emphasis is placed on the role of disorder as well as on an in-plane magnetic field. Beyond some critical value, disorder is observed to suppress the charge density wave melting temperature to zero. In addition, we find that a transition from perpendicular to parallel stripes (relative to the in-plane magnetic field) exists when the electron gas thickness exceeds approximately 60 A. The perpendicular alignment of the stripes is in agreement with the experimental finding that the easy conduction direction is perpendicular to the in-plane field.     

Strain induced novel quantum magnetotransport properties of topological insulators

Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov–de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment.     

Scanning tunneling microscopy and spectroscopy of graphene layers on graphite

We report low temperature scanning tunneling microscopy and spectroscopy on graphene flakes supported on a graphite substrate. The experiments demonstrate that graphite is exceptionally well suited as a substrate for graphene because it offers support without disturbing the intrinsic properties of the charge carriers. The degree of coupling of a graphene flake to the substrate was recognized and characterized from the appearance of an anomalous Landau level sequence in the presence of a perpendicular magnetic field. By following the evolution of the Landau level spectra along the surface, we identified graphene flakes that are decoupled or very weakly coupled to the substrate. From the Landau level sequence in this flake, we extract the local Fermi velocity and energy of the Dirac point and find extremely weak spatial variation of these quantities confirming the high quality and non invasive nature of the graphite substrate.     

Magnetoplasmons in gapped graphene in a periodically modulated magnetic field

Motivated by recent experiments on long‐lived magnetoplasmons in the presence of a perpendicular magnetic field, we investigate the dynamical dielectric response function of graphene in contact with a substrate using the random phase approximation. We add a periodically modulated magnetic field within the graphene plane and address both the inter and intra Landau band magnetoplasmons. Verification of the predicted magnetic modulation effects is possible by experiments analogous to those for the zero gap limit.     

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B=0 and B=2 T shows a 20% decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin-orbit effective fields in the in-plane and out-of-plane directions and discuss the role of the Elliott-Yafet and Dyakonov-Perel mechanisms for spin relaxation.     

Magnetoresistance anisotropy in Si /SiGe in tilted magnetic fields: experimental evidence for a stripe-phase formation

We observe pronounced transport anisotropies in magnetotransport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite spin to energetic coincidence. The observed anisotropies disappear drastically for temperatures above 1 K. We propose that our experimental findings may be caused by the formation of a unidirectional stripe phase oriented perpendicular to the in-plane field.     

Landau levels in graphene in the presence of emergent gravity

We consider graphene in the presence of external magnetic field and elastic deformations that cause emergent magnetic field. The total magnetic field results in the appearance of Landau levels in the spectrum of quasiparticles. In addition, the quasiparticles in graphene experience the emergent gravity. We consider the particular choice of elastic deformation, which gives constant emergent magnetic field and vanishing torsion. Emergent gravity may be considered as perturbation. We demonstrate that the corresponding first order approximation affects the energies of the Landau levels only through the constant renormalization of Fermi velocity. The degeneracy of each Landau level receives correction, which depends essentially on the geometry of the sample. There is the limiting case of the considered elastic deformation, that corresponds to the uniformly stretched graphene. In this case in the presence of the external magnetic field the degeneracies of the Landau levels remain unchanged.     

Corrugated graphene: effects of in-plane and tilted out-of-plane magnetic fields

The electronic energy level structure of the corrugated graphene electron subjected to a magnetic field tilted with respect to the graphene plane and an in-plane homogeneous magnetic field is investigated theoretically within the perturbation framework. It is shown that the anisotropy induced by the tilted magnetic field strongly modifies the Fermi velocity of the corrugated graphene electron, and the corrugated structure yields intrinsic Weiss oscillations in both Fermi velocity and the graphene Landau levels.     

Time domain capacitance spectroscopy of tunneling electrons in the two-dimensional electron gas

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system (2DES). The method yields I-V characteristics for tunneling with no distortions arising from low 2D in-plane conductivity. We have used the technique to determine the pseudogap energy spectrum for electron tunneling into and out of a 2D system and, further, we have demonstrated that such tunneling measurements reveal spin relaxation times within the 2DEG. Pseudogap: In a 2DEG in perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. No existing theory predicts the observed behavior. Spin relaxation: We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2DES. For most 2D Landau level filling factors, we find that electrons tunnel with a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν=1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.     

Magnetoresistance measurements of graphene at the charge neutrality point

We report on transport measurements of the insulating state that forms at the charge neutrality point of graphene in a magnetic field. Using both conventional two-terminal measurements, sensitive to bulk and edge conductance, and Corbino measurements, sensitive only to the bulk conductance, we observed a vanishing conductance with increasing magnetic fields. By examining the resistance changes of this insulating state with varying perpendicular and in-plane fields, we probe the spin-active components of the excitations in total fields of up to 45?T. Our results indicate that the ν=0 quantum Hall state in single layer graphene is not spin-polarized.     

Carrier scattering from dynamical magnetoconductivity in quasineutral epitaxial graphene

The energy dependence of the electronic scattering time is probed by Landau level spectroscopy in quasineutral multilayer epitaxial graphene. From the broadening of overlapping Landau levels we find that the scattering rate 1/τ increases linearly with energy ?. This implies a surprising property of the Landau level spectrum in graphene-the number of resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanisms and carrier mobilities in the graphene system investigated.     

Quantum Hall states near the charge-neutral Dirac point in graphene

We investigate the quantum Hall (QH) states near the charge-neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors nu=+/-1 depend only on the perpendicular component of the field with respect to the graphene plane, indicating that they are not spin related. A nonlinear magnetic field dependence of the activation energy gap at filling factor nu=1 suggests a many-body origin. We therefore propose that the nu=0 and +/-1 states arise from the lifting of the spin and sublattice degeneracy of the n=0 Landau level, respectively.     

Quantum Hall effect, screening, and layer-polarized insulating states in twisted bilayer graphene

We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.     

Reorientation of anisotropy in a square well quantum hall sample

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are isotropic in perpendicular magnetic field but become strongly anisotropic at nu = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, B(ip) approximately 2.5 T, with the easy-current direction parallel to B(ip) but rotates by 90 degrees at B(ip) approximately 10 T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.     

Detecting three-dimensional Weyl semimetal with a laser pulse

Three-dimensional Weyl semimetals have attracted many interests nowadays as they own novel topological properties. Here we propose to detect the Weyl semimetal by the scattered electrons (SEs) in the presence of a magnetic field. A laser pulse may cause the transition of electrons between different Landau levels (LLs) and therefore the SEs are induced. We make a detailed analysis of the SEs and find that the SEs and accompanying selection rules are different when the laser pulse acts perpendicular and parallel to the magnetic field. We also investigate the influence of temperature on the SEs. In addition, a comparison with graphene was also made, where the SEs exhibit δ-peaks. The implications of our results in experiment are discussed.     

Light-induced unconventional Landau levels of ultracold fermions in a trilayer honeycomb lattice

The spectrum of cold fermionic atoms is studied in a trilayer honeycomb optical lattice subjected to a perpendicular effective magnetic field,which is created with optical means. In the low energy approximation,the spectrum shows unconventional Landau levels,which are proportional to the 3/2 power of integer numbers. The zoro modes exist and the quasiparticles are chiral. It is also proposed to identify the unconventional Landau levels via probing the dynamic structure factor of the system with Bragg spectr...     

On the theory of Nernst–Ettingshausen oscillations in monolayer and bilayer graphene

The Landau levels in graphene in crossed magnetic and electric fields are dependent on the electric field. However, this effect is not taken into account in many theoretical studies of graphene in crossed fields. In particular, it is not considered in the Nernst–Ettingshausen effect, in which the regime of crossed fields is realized. In this Letter, we considered the Nernst–Ettingshausen effect in monolayer and bilayer graphene, taking into account the dependence of Landau levels on the electric field. We showed that the magnitude and period of the Nernst coefficient oscillations depend on the electric field. This fact is important for the fundamental theory of Nernst–Ettingshausen effect in graphene and gives the new possibility for control of this effect using an applied electric field. The latter is very interesting for practical applications.     

The linewidth of infrared light transitions between the Landau levels in graphene

We theoretically propose a structure that the population inversion between the Landau levels (LLs) of the graphene can be achieved by the electrical injection. This structure may be used for the Landau level-laser and related infrared and terahertz emitters. We mainly study the linewidth of the optical transitions between LLs in graphene due to the electron–acoustic phonon scattering. Within the Huang–Rhysʼs lattice relaxation model, we improve the effective single-phonon mode (ESM) for the acoustic phonon to calculate the linewidth of the optical transition and compare the obtained results with that of in the low and high-temperature limit. We find that the ESM provides a very good approximation for the temperature dependence of linewidth, which covers the dominating features of the low and high-temperature limit.