Polar Mixing Optical Phonon Spectra in Wurtzite GaN Cylindrical Quantum Dots： Quantum Size and Dielectric Effects

The interface-optical-propagating （IO-PR） mixing phonon modes of a quasi-zero-dimensional （QOD） wurtzite cylindrical quantum dot （QD） structure are derived and studied by employing the macroscopic dielectric continuum model. The analytical phonon states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. p-IO//z-PR mixing modes and the z-IO//p-PR mixing modes existing in QOD wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrieal forms. Via a standard procedure of field quantization, the Frohlich Hamiltonians of electron-（IO-PR） mixing phonons interaction are obtained. Numerical calculations on a wurtzite GaN cylindrical QD are performed. The results reveal that both the radial-direction size and the axial-direction size as well as the dielectric matrix have great influence on the dispersive frequencies of the IO-PR mixing phonon modes. The limiting features of dispersive curves of these phonon modes are discussed in depth. The phonon modes ＂reducing＂ behavior of wurtzite quantum confined systems has been observed obviously in the structures. Moreover, the degenerating behaviors of the IO-PR mixing phonon modes in wurtzite QOD QDs to the IO modes and PR modes in wurtzite Q2D QW and QID QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics.     

Influence of a phonon bath in a quantum dot cavity QED system:Dependence of the shape

We present a systematic analysis on the role of the quantum dot （QD） shape in the influence of the phonon bath on the dynamics of a QD cavity QED system. The spectral functions of the phonon bath in three representative QD shapes： spherical, ellipsoidal, and disk, are calculated from the carrier wave functions subjected to the confinement potential provided by the corresponding shape. The obtained spectral functions are used to calculate three main effects brought by the phonon bath, i.e., the coupling renormalization, the off-resonance assisted feeding rate and the pure dephasing rate. It is found that the spectral function of a disk QD has the widest distribution, hence the phonon bath in a disk QD can lead to the smallest renormalization factor, the largest dephasing rate in the short time domains（≤2 ps）, and the oft-resonance assisted feeding can support the widest detuning. Except for the pure dephasing rate in the long time domains, all the influences brought by the phonon bath show serious shape dependence.     

Modifying electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers

We have studied theoretically the electron-phonon scattering rates in GaAs/AlAs quantum wells which have additional thin AlAs layers in them using the dielectric continuum approach for the phonons. The confined and interface phonon modes and the intersubband electron phonon scattering rates of these structures have been calculated. The system with an additional AlAs layer is found to have intersubband electron scattering rates which are increased modestly as compared to those for the corresponding quantum well. These results show that scattering rates in general are expected to depend only weakly on the effects of system structure on the optical phonon spectra.     

Polar Interface Optical Phonon Modes and Fr(o*)hlich Electron-Phonon Interaction Hamiltonians in an Arbitrary Layer-Number Quantum Well System

By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation forpolarization vector, electron-IO phonon Frohlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated withinthe framework of dielectric continuum approximation. Numerical calculation on seven-layer Alx Ga1-x As/GaAs systemshave been performed. Via the numerical results in this work and previous works, the general characters of the IO phononmodes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as ageneralization of previous works on IO phonon modes in some fixed layer-number quantum well systems, and it providesa uniform method to investigate the effects of IO phonons on the multi-layer coupling quantum well systems.     

Phonon States and Dispersive Spectra of Polar Optical Phonons in Quasi-One-Dimensional Nanowires of Wurtzite ZnO and Zinc-Blend MgO Semiconductors

Within the framework of the macroscopic dielectric continuum model and Loudon's uniaxial crystal model, the phonon modes of a wurtzite/zinc-blende one-dimensional (1D) cylindrical nanowire (NW) are derived and studied. The analytical phonon states of phonon modes are given. It is found that there exist two types of polar phonon modes, i.e. interface optical (IO) phonon modes and the quasi-confined (QC) phonon modes existing in 1D wurtzite/zinc-blende NWs. Via the standard procedure of field quantization, the Fröhlich electron-phonon interaction Hamiltonians are obtained. Numerical calculations of dispersive behavior of these phonon modes on a wurtzite/zinc-blende ZnO/MgO NW are performed. The frequency ranges of the IO and QC phonon modes of the ZnO/MgO NWs are analyzed and discussed. It is found that the IO modes only exist in one frequency range, while QC modes may appear in three frequency ranges. The dispersive properties of the IO and QC modes on the free wave-number k_z and the azimuthal quantum number m arediscussed. The analytical Hamiltonians of electron-phonon interaction obtained here are quite useful for further investigating phonon influence on optoelectronics properties of wurtzite/zinc-blende 1D NW structures.     

Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure

We calculate the electron-phonon scattering rate for an asymmetric double barrier resonant tunneling structure based on dielectric continuum theory, including all phonon modes, and show that interface phonons contribute much more to the scattering rate than do bulk-like LO phonons for incident energies which are approximately within an order of magnitude of the Fermi energy. The maximum scattering rate occurs for incident electron energies near the quantum well resonance. Subband nonparabolicity has a significant influence on electron-phonon scattering in these structures. We show that the relaxation time is comparable to the dwell time of electrons in the quantum well for a typical resonant tunneling structure. Received: 23 December 1997 / Revised: 24 March 1998 / Accepted: 9 March 1998     

Electron-phonon interaction in hemispherical quantum dot

Within the framework of the dielectric continuum (DC) model, the optical phonon modes and electron-optical-phonon interaction in hemispherical quantum dot are investigated. The proper eigenfunctions for longitudinal optical (LO) and interface optical (IO) phonon modes are constructed. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron-phonon interaction. The dispersion relation of IO phonon modes is size independent. The potential applications of these results are also discussed.     

Polar optical phonon states and their electron-phonon coupling properties in a wurtzite nitride quantum dot

Within the framework of the macroscopic dielectric continuum model, the interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) structure are derived and studied. The approximative analytical-phonon-states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. ρ-IO/z-PR mixing modes and the z-IO/ρ-PR mixing modesexisting in Q0D wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrical forms. Via a standard procedure of field quantization, the Fröhlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. And the orthogonal relations of polarization eigenvectors for these IO-PR mixing modes are also deduced. Numerical calculations of dispersive relation and electron-phonon coupling properties on a wurtzite GaN cylindrical QD are carried out. The behaviors that the IO-PR mixing phonon modes in wurtzite QDs reduce to the IO modes and PR modes in wurtzite QW and QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics. The result shows that the present theories of polar mixing phonon modes in wurtzite cylindrical QDs are consistent with the phonon modes theories in wurtzite QWs and QWR systems. The coupling properties of electron-(IO-PR) mixing modes interactions are studied and analyzed in detail. An abnormal increase of electron-phonon coupling strength are observed as the azimuthal quantum numbers and order of phonon modes increase, which is ascribed to the modulation effect of different dielectric functions of wurtzite crystals in radius- and axial-directions. The analytical electron-phonon interaction Hamiltonians obtained here are useful for further investigating phonon influence on optoelectronics properties of wurtzite Q0D QD structures.     

Improved Ligand-Field Theoretical Calculations of R-Line Thermal Broadenings of NIgO：Cr^3＋ and MgO：V^2＋

With the values of parameters obtained from improved ligand-field theory, by taking into account all the irreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunctions within d^3 electronic configuration, the R-line thermal broadenings （TB） of both MgO：Cr^3＋ and MgO：V^2＋ have microscopic-theoretically been calculated, The results are in very good agreement with the experimental data. It is found that the R-line TB of MgO：Cr^3＋ or MgO：V^2＋ comes from the first-order term of EPI. The elastic Raman scattering of acoustic phonons plays a dominant role in R-line TB of MgO：Cr^3＋ or MgO：V^2＋.     

Energy Spectrum,g Factors,Strain-Induced Level-Splittings and R-Line Thermal Shift of MgO：V^2＋＋

Traditional ligand-field theory has to be improved by taking into account both pure electronic contribution and electron-phonon interaction one （including lattice-vibrational relaxation energy）. By means of improved ligand-field theory, the R line, t^322T1 and t^322T2 lines, t^22（^3T1）e^4T2, t^22（^3T1）e^4T1 and t2e^2（^4A2）4T1 bands, g factors of t^32 ^4A2 and t32E, four strain-induced level-splittings and R-line thermal shift of MgO：V^2＋ have been calculated. The results are in very good agreement with the experimental data. It is found that for MgO：V^2＋, the contributions due to electronphonon interaction （EPI） come from the first-order term; the contributions from the second-order and higher terms are insignificant. In thermal shift of R line of MgO：V^2＋, the temperature-dependent contribution due to EPI is dominant. The results obtained in this work may be used in theoretical calculations of other effects of EPI.     

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes as well as the corresponding Fro^ehlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-well wire (QWW) are derived and studied. Numerical calculations on GaAs/AlzGa1-x As cylindrical QWW are performed. Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersion frequencies of IO or SO phonon modes sensitively depend on the Al mole fraction x in AlzGa1-x As material and the wavevector in z direction, kz. With the increasing of kz and quantum number m, the frequency of each IO mode approaches one of the two frequency values of the single GaAs/AlxGa1-x As heterostructure, and the electrostatic potential distribution of the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the coupling between the electron-IO and -SO phonons becomes weaker.     

Anisotropy Effects on Polar Optical Vibrations in a Freestanding Wurtzite Cylindrical Quantum Dot

The properties of polar optical phonon vibrations in a quasi-zero- dimensional （QOD） anisotropic wurtzite cylindrical quantum dot （QD） are analyzed based on the dielectric continuum model and Loudon＇s uniaxial crystal model. The analytical electrostatic potentials of the phonon vibrations in the systems are deduced and solved exactly. The result shows that there exist four types of polar mixing optical phonon modes in the QOD wurtzite cylindrical QD systems. The dispersive equations and electron-phonon coupling function for the quasi-confined-half-space （QC-HS） mixing modes are derived and discussed. It is found that once the radius or the height of the QD approach infinity, the dispersive equations of the QC-HS mixing modes in the QOD cylindrical QD can naturally reduce to those of the QC and HS modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both of physicM and mathematical viewpoints.     

Anisotropy Effects on Polar Optical Vibrations in a Freestanding Wurtzite Cylindrical Quantum Dot

The properties of polar optical phonon vibrations in a quasi-zero- dimensional (Q0D) anisotropic wurtzite cylindrical quantum dot (QD) are analyzed based on the dielectric continuum model and Loudon's uniaxial crystal model.The analytical electrostatic potentials of the phonon vibrations in the systems are deduced and solved exactly. The result shows that there exist four types of polar mixing optical phonon modes in the Q0D wurtzite cylindrical QD systems. The dispersive equations and electron-phonon coupling function for the quasi-confined-half-space (QC-HS) mixing modes are derived and discussed. It is found that once the radius or the height of the QD approach infinity, the dispersive equations of the QC-HS mixing modes in the Q0D cylindrical QD can naturally reduce to those of the QC and HS modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both of physical and mathematical viewpoints.     

Intercalant and intermolecular phonon assisted superconductivity in K-doped picene

K(3) picene is a superconducting molecular crystal with a critical temperature of T(c) = 7 or 18 K, depending on the preparation conditions. Using density functional theory we show that electron-phonon interaction accounts for T(c) 3-8 K. The average electron-phonon coupling, calculated by including the phonon energy scale in the electron-phonon scattering, is λ = 0.73 and ω(log) = 18.0 meV. Intercalant and intermolecular phonon modes contribute substantially (40%) to λ as also shown by the isotope exponents of potassium (0.19) and carbon (0.31). The relevance of these modes makes superconductivity in K-doped picene peculiar and different from that of fullerenes.     

One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

Theory of phonon-modulated electron spin relaxation time based on the projection reduction method

This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature （T） dependence of electron spin relaxation times （T1） in silicon is T1 ∝ T-1.07 at low temperatures and T1 ∝ T-3.3 at high temperatures for acoustic deformation constant Pad = 1.4 × 10^7 eV and optical deformation constant Pod = 4.0 × 10^17 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field （B） dependence of the relaxation times is T1 ∝ B-2.7 at 100 K and T1 ∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1 ∝ B-3.0- B -2.5.     

Evolution of the 251 cm-1 temperature in infrared phonon mode with Ba0.6K0.4Fe2As2

The far-infrared optical reflectivity of an optimaUy doped Ba1-xKxFe2As2 （x = 0.4） single crystal is measured from room temperature down to 4 K. We study the temperature dependence of the in-plane infrared-active phonon at 251 em-1. This phonon exhibits a symmetric line shape in the optical conductivity, suggesting that the coupling between the phonon and the electronic background is weak. Upon cooling down, the frequency of this phonon continu- ously increases, following the conventional temperature dependence expected in the absence of a structural or magnetic transition. The intensity of this phonon is temperature independent within the measurement accuracy. These observa- tions indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping in the optimally doped Bao.6Ko.4Fe2As2 compound.     

Thermodynamic properties of 3C-SiC

In the present paper, we report on the results of various thermodynamic properties of 3C-SiC at high pressure and temperature using first principles calculations. We use the plane-wave pseudopotential density functional theory as im- plemented in Quantum ESPRESSO code for calculating various cohesive properties in ambient condition. Further, ionic motion at a finite temperature is taken into account using the quasiharmonic Debye model. The calculated thermody- namic properties, phonon dispersion curves, and phonon densities of states at different temperatures and structural phase transitions at high pressures are found to be in good agreement with experimental and other theoretical results.     

One-phonon resonant electron Raman scattering in a cylindrical semiconductor quantum dot

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the surface optical (SO) phonon modes in semiconductor quantum dots (QDs). We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities are found to be sensitively size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.