Unidirectional anisotropy in (<Emphasis Type="Italic">RE-TM</Emphasis>)/NiFe film systems

The quasi-static magnetic parameters of TbFe/NiFe and DyCo/NiFe bilayer exchange-biased films characterized by unidirectional anisotropy are studied. The characteristic temperatures are determined at which the unidirectional anisotropy disappears due to processes in the magnetically hard layer. The mechanisms responsible for the appearance of unidirectional anisotropy associated with the heterophase property of the magnetically hard layer are analyzed.     

Effects of exchange interaction in bilayer Dy<Subscript>x</Subscript>Co<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>/NiFe films in the vicinity of compensation compositions of amorphous DyCo alloys

The displacement field of the hysteresis loop due to exchange anisotropy in planar DyCo/NiFe systems is studied experimentally as a function of the concentration of the rare-earth element. The bilayer DyCo/NiFe film system is characterized by an orthogonal arrangement of the effective magnetizations of separate layers under the condition that the amorphous DyCo layer is prepared in the region of magnetic compensation. An analysis of the dependence of the displacement field on the Dy concentration has led to an understanding of the physical mechanism of the formation of the exchange anisotropy in these planar systems.     

Ferromagnetic and spin-wave resonance in Ni0.8Fe0.2/Dy1−x Cox bilayer films

The standing spin wave spectra of Ni_0.8Fe_0.2(1000–3000 Å)/(Dy_1?x Co_x(700 Å) bilayer exchange-biased films with two different (precompensation Dy_0.2Co_0.8 and postcompensation Dy_0.3Co_0.7) compositions of the hard magnetic layer are analyzed. Measurements are performed at room temperature. It is found that the effective magnetic layer thickness (d _eff=d ₀±Δd), which determines the wave vectors of the first modes in the spectrum, differs from the d ₀ value specified in film technology. The sign of |Δd| ～ 500 Å is governed by the composition of the DyCo hard magnetic layer.     

Spin-wave resonance in three-layer NiFe/DyxCo1−x /NiFe films as a method for detecting structural inhomogeneities in amorphous DyxCo1−x Layers

The standing spin-wave spectrum was studied by spin-wave resonance in three-layer Ni₈₀Fe₂₀/Dy_xCo_1?x /Ni₈₀Fe₂₀ films with an amorphous interlayer of DyCo alloy in the region of compensation compositions. It is shown that the spin-wave resonance (SWR) spectrum in the geometry k‖M is observed only for a planar system with a DyCo layer of precompensation composition. In the k⊥M geometry, the SWR spectrum was observed for the DyCo systems with both pre-and postcompensation compositions. The exchange stiffness was analyzed as a function of the DyCo layer thickness to formulate a model of microheterophase structure for amorphous DyCo alloys in the compensation region, where the magnetic microstructure accounts for the dynamic and static magnetic characteristics of these materials.     

缓冲层Ta对FePt薄膜L10有序相转变及矫顽力的影响

制备了Ta/FePt/C系列多层膜，研究了样品在不同温度退火后的磁特性和微结构.实验结果表明，不同厚度的Ta缓冲层具有不同的微结构特征，显著影响FePt层的L1₀有序相的形成及相应的矫顽力.当Ta缓冲层较薄，Ta层为非晶态，且较为粗糙，由此使FePt在界面处产生较多的缺陷并导致较高密度的晶界，在退火过程中，受束缚相对较弱的非晶态的Ta原子比较容易沿FePt的缺陷和晶界处向FePt层扩散，使FePt在相变过程中产生的应力比较容易释放，同时，Ta在扩散过程中产生的缺陷，降低了FePt有序 关键词： FePt薄膜 0相')" href="#">L1₀相 原子扩散     

n型有序多孔硅基氧化钨室温气敏性能研究

利用电化学腐蚀方法制备了n型有序多孔硅, 并以此为基底用直流磁控溅射法在其表面溅射不同厚度的氧化钨薄膜. 利用X射线和扫描电子显微镜表征了材料的成分和结构, 结果表明, 多孔硅的孔呈柱形有序分布, 溅射10 min的WO₃薄膜是多晶结构, 比较松散地覆盖在整个多孔硅的表面. 分别测试了多孔硅和多孔硅基氧化钨在室温条件下对二氧化氮的气敏性能, 结果表明, 相对于多孔硅, 多孔硅基氧化钨薄膜对二氧化氮的气敏性能显著提高. 对多孔硅基氧化钨复合结构的气敏机理分析认为, 多孔硅和氧化钨薄膜复合形成的异质结对良好的气敏性能起到主要作用, 氧化钨薄膜表面出现了反型层引起了气敏响应时电阻的异常变化. 关键词： 有序多孔硅 氧化钨薄膜 二氧化氮 室温气敏性能     

Effect of the chemistry and structure of the native oxide surface film on the corrosion properties of commercial AZ31 and AZ61 alloys

The purpose of this study has been to advance in knowledge of the chemical composition, structure and thickness of the thin native oxide film formed spontaneously in contact with the laboratory atmosphere on the surface of freshly polished commercial AZ31 and AZ61 alloys with a view to furthering the understanding of protection mechanisms. For comparative purposes, and to more fully describe the behaviour of the native oxide film, the external oxide films formed as a result of the manufacturing process (as-received condition) have been characterised. The technique applied in this research to study the thin oxide films (thickness of just a few nanometres) present on the surface of the alloys has basically been XPS (X-ray photoelectron spectroscopy) in combination with ion sputtering. Corrosion properties of the alloys were studied in 0.6 M NaCl by measuring charge transfer resistance values, which are deduced from EIS (electrochemical impedance spectroscopy) measurements after 1 h of exposure. Alloy AZ61 generally showed better corrosion resistance than AZ31, and the freshly polished alloys showed better corrosion resistance than the alloys in as-received condition. This is attributed to a combination of (1) higher thickness of the native oxide film on the AZ61 alloy and (2) greater uniformity of the oxide film in the polished condition. The formation of an additional oxide layer composed by a mixture of spinel (MgAl₂O₄) and MgO seems to diminish the protective properties of the passive layer on the surface of the alloys in as-received condition.     

Influence of the film thickness and additional elements (Al,O, and N) on the properties of FeCo film structures

The magnetic properties and domain structure of FeCoAlON thin films with thicknesses varying from 55 to 550 nm have been studied, and conditions favoring preparation of FeCoAlON films with uniaxial anisotropy in the direction normal to the film plane, which is required for designing “perpendicular” super-high-density information recording, have been established. In FeCoAlON films with a thickness up to 300 nm, the domain structure consists of cross-linked domain walls, because strong demagnetizing field suppresses formation of stripe domains. After the film thickness has reached 320 nm, cross-linked domain walls transform into stripe domains, with uniaxial anisotropy in the film plane disappearing, to become replaced by uniaxial anisotropy in the direction normal to the film plane, which can be assigned to magnetoelastic stresses induced by nitrogen atoms filling up interstitial space in the (110) plane. A further increase in the film thickness (up to 550 nm) leads to a rotational anisotropy due to the increase of nitrogen concentration in interstitials and the increase of magnetoelastic stresses.     

Thickness-dependent tunable characteristics of (Ba0.5Sr0.5)0.925K0.075TiO3 thin films prepared by pulsed laser deposition

The thickness-dependent dielectric properties and tunability of pulsed laser deposited (Ba_0.5Sr_0.5)_0.925K_0.075TiO₃ (BSKT) thin films with different thickness ranging from 80 to 300 nm has been investigated. Dielectric properties of the BSKT thin films are substantially improved as the BSKT film thickness increases, which can be explained by the model of a low-permittivity dead layer that is connected in series with the bulk region of the film. The estimated values of thickness and the average dielectric constant for the dead layer are 2.4 nm and 23.5, respectively, in a Pt/BSKT/Pt capacitor structure. The tunability and figure of merit increased with increasing film thickness, which are attributed to the change in lattice parameter and the dead layer effect.     

Laser-induced periodic surface structures on different poly-carbonate films

Laser-induced periodic surface structures (LIPSS) were generated on oriented and amorphous thick, as well as on spin-coated thin, poly-carbonate films by polarized ArF excimer laser light. The influence of the film structure and thickness on the LIPSS formation was demonstrated. Below a critical thickness of the spin-coated films the line-shaped structures transformed into droplets. This droplet formation was explained by the laser-induced melting across the whole film thickness and subsequent de-wetting on the substrate. The thickness of the layer melted by laser illumination was computed by a heat-conduction model. Very good agreement with the critical thickness for spin-coated films was found. The original polymer film structure influences the index of refraction of the thin upper layer modified by the laser treatment, as was proven by the dependence of the structure’s period on the angle of incidence both for ‘s’- and ‘p’-polarized beams. The effect of the original surface roughness – grains in thick films or holes in thin films – was studied using atomic force microscopy. It was shown that the oblique incidence of ‘s’-polarized beams results in an intensity confinement in the direction of the forward scattering and in asymmetrical interference pattern formation around these irregularities. A new, two-dimensional grating-like structure was generated on spin-coated films. These gratings might be used as a special kind of mask. Received: 10 July 2001 / Accepted: 23 July 2001 / Published online: 30 August 2001     

Edge misfit dislocations in GexSi1 ? x/Si(001) (x ～ 1) heterostructures: role of buffer GeySi1 ? y (y < x) interlayer in their formation

The structure of dislocations in Ge _x Si_{1 − x} (x ∼ 0.4–0.8) films grown by molecular beam epitaxy on Si(001) substrates tilted by 6° toward the nearest (111) plane has been studied. The epitaxy of GeSi films on substrates deviating from the exact (001) orientation has allowed us to establish the main mechanism of formation of edge misfit dislocations (MDs), which most effectively (for heterostructures of the given composition) relieve stresses caused by the mismatch between lattice parameters of the film and substrate. Despite the edge MDs being defined as immobile (sessile) dislocations, their formation proceeds according to the gliding mechanism proposed by Kvam et al. [J. Mater. Res. 5, 1900 (1990)]. A comparative estimation of the propagation velocities of the primary and induced 60° dislocations, as well as the resulting 90° MDs, has been performed. It has been established that the condition providing for the most effective edge MD formation by the induced nucleation mechanism is the appearance of 60° MDs in a stressed film immediately after it reached a critical thickness. A source of these dislocations can be provided by a preliminarily grown buffer GeSi layer that occurs in a metastable state at the initial stage of plastic relaxation.     

Synthesis and magnetic states of cobalt in three-layer Co/Ge/Co films

The magnetic properties of three-layer Co-Ge magnetic films have been studied experimentally as a function of technological conditions of their deposition. It has been found that the films deposited at a high deposition rate have a granular structure, and the films obtained at a low deposition rate have an X-ray amorphous structure. Electron microscopy and nuclear magnetic resonance studies have demonstrated that, at the same cobalt layer thickness, the semiconductor granule sizes depend on the average semiconductor layer thickness and correlate with the formation of different cobalt phases (amorphous, cubic, and hexagonal). The thermomagnetic properties of the films have been investigated.     

Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering

The initial stages of the growth of barium strontium titanate (BaSrTiO₃) ferroelectric films deposited on single-crystal sapphire substrates have been studied using medium-energy ion scattering. It has been found that, depending on the variation in the deposition temperature, the mechanisms of formation of the ferroelectric film change as a result of the change in the mechanism of mass transfer of the deposited atoms. It has been shown that the minimum thickness of the continuous ferroelectric film on sapphire is of the order of 6 nm.     

Two hardening mechanisms in single crystal thin films studied by discrete dislocation plasticity

Two-dimensional discrete dislocation plasticity simulations of the evolution of thermal stress in single crystal thin films on a rigid substrate are used to study size effects. The relation between the residual stress and the dislocation structure in the films after cooling is analyzed using dislocation dynamics. A boundary layer characterized by a high stress gradient and a high dislocation density is found close to the impenetrable film-substrate interface. There is a material-dependent threshold film thickness above which the dislocation density together with the boundary layer thickness and stress state are independent of film thickness. In such films the stress outside the boundary layer is on average very low, so that the film-thickness-independent boundary layer is responsible for the size effect. A larger size effect is found for films thinner than the threshold thickness. The origin of this size effect stems from nucleation activity being hindered by the geometrical constraint of the small film thickness, so that by decreasing film thickness, the dislocation density decreases while the stress in the film increases. The size dependence is only described by a Hall–Petch type relation for films thicker than the threshold value.     

Method for the formation of graphene films

A method is proposed to form graphene films using thermodiffusion of carbon atoms from an amorphous carbon or silicon-carbon film with a nanosized thickness through a catalyst film, their accumulation at the catalyst layer/barrier layer interface, and the subsequent carbon quasi-liquid-graphene phase transition. One of the advantages of this method of producing graphene films is the possibility of their formation directly on a dielectric layer and the subsequent suspension of a graphene film over the substrate surface using membrane technologies, which excludes the necessity of using complex procedures to separate a graphene film from the substrate.     

图谱分析退火对本征SnO2多晶薄膜性能的影响

提高CdTe太阳电池转换效率的有效途径之一是适当减薄CdS窗口层,减薄了的CdS层会严重影响电池性能,解决方法是在窗口层和透明导电膜之间加一层高阻本征SnO2薄膜。采用反应磁控溅射制备了具有高阻抗的本征SnO2薄膜,并对其进行了后处理,利用XRD,XPS等方法研究了退火前后薄膜的结构,成分及表面化学状态的变化。结果表明:经N2/O2=4:1气氛550℃(0.5h)退火后,样品由非晶态转变为四方相结构的多晶薄膜,具有(110)择优取向;XPS分析表明退火后薄膜的氧含量增加、O(1s)峰向低能方向移动,SnO被氧化成SnO2,使得薄膜的透过率增大,退火后的本征SnO2高阻膜非常适合作为过渡层应用于CdTe太阳电池中。     

Étude de l'adsorption électrochimique de l'oxygène sur des lames minces d'or par la mesure de leur résistance électrique

The electrical resistance changes of thin gold film electrodes of preferential orientation [111] with film thickness and potential have been studied. The applicability of the Fuchs-Sondheimer (FS) relation to the decrease of resistance observed at the first negative polarization and the first few potential sweeps for different thicknesses have shown that this phenomenon is due to a surface process, interpreted as a cleaning of the electrodes. The resistance changes observed during the electrochemical adsorption and desorption of oxygen also obey the FS relation. The analysis of the resistance variation with the charge exchanged during these reactions has allowed us to show that the electrochemical adsorption of oxygen, on these gold films occurs by a two-dimensional island mechanism with formation of different structures of the surface layer. The values of the resistivity change caused by the adsorption of 1% oxygen atoms (with respect to the total number of metal atoms in the films) at low coverage have been compared with those observed in other systems (metal-gas, metal-metal).     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

准自由支撑铝薄膜中有序表面结构的自组织生长

利用真空热蒸发方法在液体基底表面成功制备出具有自由支撑边界条件的金属铝薄膜系统，研究了薄膜中自发形成的自边界向内部区域逐渐生长而呈带状分布的有序表面结构.该有序结构的形成与薄膜厚度、沉积速率和真空环境中的生长时间等实验参数密切相关，其形成过程可用一个三阶段生长模型来描述.实验证明此类有序结构是在薄膜内应力作用下，铝原子及原子团簇在液体表面自由扩散凝聚所致.进一步的理论研究表明：基于特征的边界条件和固液相互作用，该自由支撑铝薄膜系统中包含了丰富的正弦形内应力分布，各种具有不同振幅和频率的正弦形内应力的合成可形成矩形状畴块和带状有序结构. 关键词： 液体基底 铝薄膜 自组织生长 有序结构     

外延PbZr0.4Ti0.6O3薄膜厚度对其铁电性能的影响

从Landau-Devonshire唯象理论出发，考虑到晶格失配导致的NFDA3位错应力场与极化场的耦合，研究了在SrTiO₃衬底上外延生长的PbZr_0.4Ti_0.6O₃薄膜厚度对其自发极化强度、电滞回线的影响. 结果表明，产生刃位错的PbZr_0.4Ti_0.6O₃薄膜临界厚度为～1.27nm，当薄膜厚度大于临界厚度时，在所形成的位错附近，极化强度出现急剧变化，形成自发极化强度明显减弱的“死层”；随着薄膜厚度的减小，位错间距增大，“死层”厚度与薄膜总厚度之比增加. 由薄膜电滞回线的变化情况可知，其剩余极化强度随着薄膜厚度的减小而逐渐减小. 关键词： 铁电薄膜 自发极化强度 电滞回线 位错