Magneto-optical properties and exciton dynamics in diluted magnetic semiconductor nanostructures

Nanostructures of diluted magnetic semiconductors were fabricated to study novel magneto-optical properties that are derived from quantum confined band electrons interacting with magnetic ions. Quantum dots (QDs) of Cd_0.97Mn_0.03Se were grown by the self-organization on a ZnSe substrate layer. QDs of Zn_0.69Cd_0.23Mn_0.08Se and quantum wires (QWRs) of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se were fabricated by the electron beam lithography. A single quantum well (QW) of ZnTe/Zn_0.97Mn_0.03Te and double QWs of Cd_0.95Mn_0.05Te–CdTe were grown by molecular beam epitaxy. Magneto-optical properties and the formation and relaxation dynamics of excitons were investigated by ultrafast time-resolved photoluminescence (PL) spectroscopy. Excitons in these nanostructures were affected by the low-dimensional confinement effects and the interaction with magnetic ion spins. The exciton luminescence of the Cd_0.97Mn_0.03Se QDs shows the confined exciton energy due to the dot size of 4–6 nm and also shows marked increase of the exciton lifetime with increasing the magnetic field. The QDs of Zn_0.69Cd_0.23Mn_0.08Se fabricated by the electron beam lithography display narrow exciton PL spectrum due to the uniform shape of the dots. The exciton luminescence from the QWRs of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se shows the influence of the one-dimensional confinement effect for the exciton energy and the luminescence is linearly polarized parallel to the wire direction. The transient PL from the ZnTe/Zn_0.97Mn_0.03Te QWs displays, by the magnetic field, the level crossing of the exciton spin states of the nonmagnetic and magnetic layers and the spatial spin separation for the excitons. Cd_0.95Mn_0.05Te–CdTe double QWs show the injection of the spin polarized excitons from the magnetic well to the nonmagnetic QW.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

The photoconductivity spectra of semimagnetic semiconductor Cd_0.7Mn_0.3Se have been measured at 50-300 K and in the wavelength range of 5500? to 8000?. It is found that the energy gap of Cd_0.7Mn_0.3Se changes with the temperature linearly, and the temperature coefficient (dE_g/dT) is about -7×10^-4 eV/K. A photoconductivity peak which is related to Mn²⁺ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd_1-xMn_xSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

Electron density of states at the edge of the valence band of Cd0.88Fe0.12Se—A photoemission yield study

The electronic structures of Cd_0.88Fe_0.12Se and CdSe have been investigated by photoemission yield spectroscopy (PYS) in the photon energy range from 5 to 12 eV. The () surfaces were obtained by cleavage under ultrahigh vacuum (UHV) conditions. An Fe-related emission appeared at 0.58 eV above the valence band edge. The freshly cleaved surface of Cd_0.88Fe_0.12Se interacted with ambient atmosphere more strongly than CdSe crystal. Leaving the sample in an UHV chamber at room temperature enabled us to identify surface related features and to observe decrease of the ionization energy E_i, energy threshold E_d and the crystal affinity χ due to change of the surface conditions. Effective density of states, derived from the experimental spectra of Cd_0.88Fe_0.12Se exhibits, in contrast with CdSe, a surface-related feature degenerated with the bulk valence band.     

Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S多层纳米线中s-d交换作用的研究

以氧化铝纳米孔为模板,采用直流电化学沉积的方法制备了Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S量子阱纳米线阵列,并系统研究了该纳米线阵列在不同温度和不同磁场下的电学输运特性.随着外磁场的变化,样品表现出共振传输特性.通过量子阱理论对实验现象进行了分析,直接得到了稀磁层Cd_(0.97)Mn_(0.03)S中s-d交换作用常数N_0α的定量结果.研究发现该交换作用常数随温度具有e~(-1/T)的变化趋势.     

PbSe-MnSe纳米复合热电材料的微结构和电热输运性能

相比于常见的热电材料PbTe, 另一种硫族铅化合物PbSe具有熔点高、Se储量更丰富等优势, 从而越来越受到科学界的关注. 本文采用熔融淬火结合快速热压烧结工艺制备了Pb_0.98-xMn_xNa_0.02Se(0 ≤x ≤ 0.12)纳米复合热电材料, 系统地研究了不同Mn含量对材料微纳结构、机械性能和热电性能的影响规律. 发现纳米复合样品中有面心立方结构的MnSe球状和薄层状析出物, 显微硬度得到显著增强. 少量固溶的Mn增加了能带简并度, 使功率因子提高, 球状析出物使声子散射增强、热导率降低, 体系的热电优值ZT得到优化; 但是当Mn含量更高时, 赛贝克系数趋于饱和, 连续析出物使晶格热导率反常增大, ZT 没有得到进一步改善. 通过进一步调节Na含量优化了载流子浓度, 获得了ZT=0.65的PbSe-MnSe纳米复合热电材料.     

Effects of temperature and pressure on thermodynamic properties of Cd0.25Zn0.75 alloy

Thermodynamic properties of Cd_0.25Zn_0.75Se alloy are studied using quasi harmonic model for pressure range of 0 GPa-10 GPa and temperature range 0 K-1000 K. The structural optimization is obtained by self-consistent field calculations and full-potential linearized muffin-tin orbital method with GGA+U as an exchange correlation functional where U=2.3427 eV is Hubbard potential. The effects of temperature and pressure on bulk modulus, Helmholtz free energy, internal energy, entropy, Debye temperature, Grüneisen parameter, thermal expansion coefficient, and heat capacities of the material are observed and discussed. The bulk modulus, Helmholtz free energy, and Debye temperature are found to be decreased on increasing temperature while there is an increasing behavior with rise of the pressure. Whereas the internal energy has increasing trend with the rise in temperature and it almost remains insensitive to pressure. The entropy of the system increases (decreases) with rise of pressure (temperature).     

Magnetic phase transition in (Fe,Mn)65Ni35 alloys

Magnetization measurements on the Fe₆₀Mn₅Ni₃₅ and Fe₅₀Mn₁₅Ni₃₅ alloy samples were carried out in the temperature range 80T300 K and in magnetic fields up to 8 kOe. The Fe₆₀Mn₅Ni₃₅ was found to order ferromagnetically with a Curie temperature, T_c, above 300 K. From the temperature dependence of the spontaneous magnetization, M_s, it was concluded that the magnetic behavior of Fe₆₀Mn₅Ni₃₅ follows Wohlfarth theory of weak itinerant ferromagnet. The Fe₅₀Mn₁₅Ni₃₅ sample exhibits a magnetic phase transition from ferromagnetism to paramagnetism at T_c=242 K. The critical amplitudes and critical exponents (β, γ and δ) have been determined by using Arrott plots, Kouvel–Fisher method and scaling plots of the reduced magnetization and reduced magnetic field. The values of β, γ and δ are discussed and compared with the results obtained for various theoretical models and also with the experimentally determined values for related systems obtained by others.     

Realization of semiconducting Cu2Se by direct selenization of Cu(111)

Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu₂Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu₂Se. The observed moiré pattern indicates a lattice mismatch between Cu₂Se and the underlying Cu(111)-$\sqrt{3}$×$\sqrt{3}$ surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu₂Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu₂Se is a semiconductor with an indirect band gap of ～ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.     

Changes in the photosensitivity and dark conductivity of CdS single crystals after illumination at high temperature

The increase of photoconductivity after previous illumination in the temperature range 320–420 K has been investigated. An activation energy of about 0.8 eV for this process, and two energies around 0.4 and 0.7 eV for the recovery process, have been found. In part of the crystals high residual conductivity has been observed as a co-appearing phenomenon. At 300 K the enhanced photosensitivity persists for a period of longer than 10⁵ s. It is shown that the enhanced photosensitivity is not connected with the destruction of donor-acceptor pairs. As a possible explanation the mechanism of generation of Frenkel pairs in the presence of free carriers is suggested.     

金属有机化学气相沉积生长Zn1-xMnxSe薄膜的发光和磁光性质

利用金属有机化学气相沉积(MOCVD)方法在GaAs衬底上生长了不同组分的Zn_1-xMn_xSe薄膜。X射线衍射和X射线摇摆曲线证明样品具有较好的结晶质量。在低温、强磁场下对样品的发光进行了研究,在带边附近观察到两个发光峰的相对强度随着磁场增强发生了变化。通过变温光谱探讨了这两个发光峰的来源,并被分别归因于自由激子跃迁和与Mn有关的束缚态激子跃迁。同时随着磁场的增强,ZnMnSe带隙发光红移是由于类S带和类P带电子与Mn离子的3d⁵电子的自旋交换作用。     

含硫宽禁带Ga2Te3基热电半导体的声电输运特性

目前对宽禁带半导体热电材料的研究开始升温, 原因是本征情况下宽禁带半导体往往具有低的热导率和高的Seebeck系数. Ga₂Te₃ 是一类带有缺陷的宽禁带半导体, 其在临界温度680± 10 K和757± 10 K处会参与共析转变和包晶反应, 因此会产生反应热. 本次工作采用少量的S元素等电子替换Ga₂Te₃中的Te元素, 观察到在临界温度附近热焓的变化, 但没有相变发生. 受热焓变化的影响这类材料在临界温度附近出现了较活跃的声电输运行为, 具体表现为热容和Seebeck系数(α)明显增大及热扩散系数(热导率)和电导率下降. 例, 对于x=0.05的材料, 其α值从596 K 时的376.3(μV·K^-1)迅速增大到695 K时的608.2(μV·K^-1), 然后又随温度升高到764 K时迅速降低到213.8(μV·K^-1). 在596 K到812 K范围, Seebeck系数和电导率几乎随温度均呈Z字形变化. 这些输运行为的变化揭示了在Ga₂Te₃基半导体中声子和载流子的临界散射特点, 这种临界散射特征对以后的继续研究具有重要的参考价值.     

The effects of Cu doping on the magnetoresistive behavior of perovskites La0.7Ca0.3MnO3

The electronic and magnetic properties of Cu-doped perovskite La_0.7Ca_0.3Mn_1−xCu_xO₃ obtained by doping Cu on its Mn sites have been studied. The perovskite structure was found to remain intact up to the highest doping level of x=0.20. At low Cu concentration (x=0.05) the temperature-dependence of resistivity of the material exhibited up to two peaks corresponding to the magnetic transitions from the PM to the FM phase, and from the FM to the AFM phase. In general, the doping level was found to suppress the ferromagnetic ordering of the material, increase its resistivity, and produce large values of magnetoresistance near the resistivity peak. These results were explained as due to the formation of the antiferromagnetic phase.     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

Lu~(3+)掺杂对CdO陶瓷电、热输运性能的影响

利用传统固相烧结法制备了Cd1-xLuxO(x=0%,0.1%,0.5%,0.75%,1.0%,1.25%,1.5%,2%)陶瓷样品并研究了Lu3+掺杂对其电、热输运性能的影响.随着Lu3+掺杂浓度的增大,Cd1-xLuxO样品的室温载流子浓度持续增大而其迁移率表现出先增大后减小的趋势.在300—1000 K测试温度区间内,Cd1-xLuxO的电导率表现出金属电导行为且其电导率和热导率均随着Lu3+掺杂浓度的增大而升高;塞贝克系数在整个测试区间内均为负值,其随温度和载流子浓度的变化关系可用自由电子模型描述.     

Photoelectronic and electrical properties of Tl2InGaS4 layered crystals

Tl₂InGaS₄ layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and below 300 K, respectively. The photoconductivity measurements reflected the existence of two other energy levels located at 0.28 eV and 0.19 eV at high and low temperatures, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature of 330 K. The illumination dependence of photoconductivity is found to exhibit supralinear recombination in all the studied temperature ranges. The change in recombination mechanism is attributed to exchange in the behavior of sensitizing and recombination centers.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.     

Bound exciton formation and excitonic localization in semimagnetic semiconductors

We review recent experimental work in which kinetics of exciton localization at impurities and alloy potential fluctuations are studied by picosecond laser spectroscopy, specifically in the mixed crystals Cd_1−xMn_xSe and Cd_1−xMn_xTe.     

Unexpected low thermal conductivity and large power factor in Dirac semimetal Cd_3As_2

Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far,extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both high electrical conductivity and low thermal conductivity. Recently, the emerging Dirac semimetal Cd3As2, a three-dimensional analogue of graphene, has been reported to host ultra-high mobility and good electrical conductivity as metals. Here, we report the observation of unexpected low thermal conductivity in Cd3As2, one order of magnitude lower than the conventional metals or semimetals with a similar electrical conductivity, despite the semimetal band structure and high electron mobility. The power factor also reaches a large value of 1.58 m W·m-1·K-2at room temperature and remains non-saturated up to 400 K.Corroborating with the first-principles calculations, we find that the thermoelectric performance can be well-modulated by the carrier concentration in a wide range. This work demonstrates the Dirac semimetal Cd3As2 as a potential candidate of thermoelectric materials.     

钽掺杂二氧化钛薄膜的光电性能研究

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO₂薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)^1/2呈正比关系. 关键词： 2')" href="#">Ta掺杂TiO₂ 脉冲激光沉积法 薄膜 导电机理     

Fe NMR, magnetization and X-ray study of Cd0.1Cu0.9Fe2O4 ferrite

⁵⁷Fe NMR spin-echo spectra, static magnetization and X-ray diffraction measurements for Cd_0.1Cu_0.9Fe₂O₄ ferrite taken in a wide range of temperatures are presented. The X-ray studies show that above 100 K the structure is cubic. The temperature dependence of the effective magnetic field acting on ⁵⁷Fe nuclei at non-equivalent tetrahedral and octahedral sites has been determined. Different thermal behaviour of the magnetic field at both sublattices and of the specific macroscopic magnetization have been found. Magnetization measurements imply that cadmium substitution does not affect the ferric ion distribution between the sublattices of the ferrite.