Exciton and Biexciton Binding Energies in Rectangular Quantum Dots

In the effective mass approximation, using the variational technology and a method of expanding the wavefunctions of exciton in terms of the eigenfunctions of the noninteracting electron-hole system, we calculate the exciton and biexciton ground state binding energies for rectangular quantum dots （QDs）. In the calculation, a three-dimensional Fourier expansion of Coulomb potential is used to remove the numerical difficulty with the 1/r singularity, and it considerably reduces the computational effort. Our results agree fairly well with the previous results. It is found that the binding energies are highly correlated to the size of QDs. The quantum confinement effect of spherical QDs about biexciton is obviously larger than that of rectangular QDs when the well width is narrower than 2.0αB.     

Binding Energies of a Positively Charged Exciton in a Quantum Disc

The binding energies of the lowest singlet and triplet states of positively charged excitons confined to a quantum disc are studied using exact diagonalization techniques. We investigate the dependence of the binding energies on the confinement strength and on the effective electron-to-hole mass ratio. The results we have obtained show that the binding energies are closely correlated to the strength of the confinement potential and the effective electron-to-hole mass ratio.     

Binding Energies of a Positively Charged Exciton in a Quantum Disc

The binding energies of the lowest singlet and triplet states of positively charged excitons confined to a quantum disc are studied using exact diagonalization techniques. We investigate the dependence of the binding energies on the confinement strength and on the effective electron-to-hole mass ratio. The results we have obtained show that the binding energies are closely correlated to the strength of the confinement potential and the effective electron-to-hole mass ratio.     

半导体量子点中弱耦合激子的性质

研究了抛物型半导体量子点中弱耦合激子的性质,在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了抛物型半导体量子点中激子的基态能量。讨论了量子点半径和受限强度对半导体量子点中弱耦合激子的基态能量的影响。以GaAs半导体为例进行了数值计算,结果表明:在弱耦合情况下,重空穴激子和轻空穴激子的基态能量随量子点半径的减小而增大,随受限强度ω₀的增强而增大。     

A Bound on Binding Energies and Mass Renormalization in Models of Quantum Electrodynamics

We study three models of matter coupled to the ultraviolet cutoff, quantized radiation field and to the Coulomb potential of arbitrarily many nuclei. Two are nonrelativistic: the first uses the kinetic energy (p+eA(x))² and the second uses the Pauli–Fierz energy (p+eA(x))²+eB(x). The third, no-pair model, is relativistic and replaces the kinetic energy with the Dirac operator D(A), but restricted to its positive spectral subspace, which is the electron subspace. In each case we are able to give an upper bound to the binding energy–as distinct from the less difficult ground state energy. This implies, for the first time we believe, an estimate, albeit a crude one, of the mass renormalization in these theories.     

利用B-splines特性计算PbS量子点中的激子基态能量的量子尺寸效应

利用B-splines特性构建量子点中激子的波函数,计算PbS量子点中激子的基态能量E_g的量子尺寸效应,并将计算结果与实验结果及其他理论计算结果进行比较;利用B-splines技术计算的激子的基态能量在整个区域与实验完全符合,同时计算了有效质量和势垒高度对基态能量E_g的量子尺寸效应的影响.     

Quantum Effect of the Exciton Intensity in a Semiconductor Microcavity

We have studied the collapses and revivals of the exciton intensity in a semiconductor microcavity under the resonant case. It is found that, when the excitons are initially in the number state, the exciton intensity exhibits the periodic oscillation if the dissipation parameters equal zero, but if there exists the dissipation, the damped oscillation appears. Whether there exists the dissipation or does not, the width of oscillation decreases with the increment of the atom numbers. When the excitons are initially in the coherent state, the width of the oscillation decreases with the increment of the dissipation.     

Binding Energy of an Exciton Bound to Ionized Acceptor in Quantum Dots

Binding energiesfor an exciton (X) trapped in the two-dimensional quantum dot by a negative ion located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics.This configuration is called a barrier (A^-,X) center.The dependence of the binding energy of the ground state of the barrier (A^-,X)center on the electron-to-hole mass ratio for a few values of the distance d between the fixed negative ion on the z axis and the dot plane is obtained.We find that when d → 0,the barrier (A^-,X) center has not any bound state.We also studied the stability and binding energy of the ground state of the barrier (A^-,X) center in a parabolic quantum dot as a function of the distance d between the fixed negative ion on the z axis and the dot plane.     

Binding Energy of an Exciton Bound to Ionized Acceptor in Quantum Dots

Binding energiesfor an exciton (X ) trapped in the two-dimensional quantum dot by a negative ion located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics.This configuration is called a barrier (A-,X) center.The dependence of the binding energy of the ground state of the barrier (A-,X)center on the electron-to-hole mass ratio for a few values of the distance d between the fixed negative ion on the z axis and the dot plane is obtained.We find that when d → 0,the barrier (A-,X) center has not any bound state.We also studied the stability and binding energy of the ground state of the barrier (A-,X) center in a parabolic quantum dot as a function of the distance d between the fixed negative ion on the z axis and the dot plane.``     

Binding Energies of the Electron in GaAs-Gal-xAlxAs Quantum Well Under Perpendicular Magnetic Field

We have calculated the binding energies of the ground state of hydrogenic donor in GaAs-Ga_1-xAl_xAs quantum well of finite barrier height in the prcscnce of a magnetic field, which is taken to be parallel to the axis of growth of the quantum-well structure. We have used the strong-perturbation theory and the perturbative-variational approach. Our results are given as a function of the size of the quantum well.     

A Simple and Accurate Method for Calculating the Gaussian Beam Expansion Coefficients

The calculation of the diffraction field radiated from the ultrasonic transducer can be simplified by using the Gaussian beam expansion technique. The key problem of this technique is how to determine the coefficients of Gaussian functions. We present a simple and accurate optimization method to calculate the Gaussian beam expansion coefficients, Half of the coefficients are obtained by solving linear equations. The other half are derived from the Fourier series expansion. Wave field simulation results demonstrate the validity of the new method.     

外电场下极性量子阱中杂质态结合能

我们用变分方法研究了外电场下量子阱中的杂质态结合能,计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al_0.3Ga_0.7As量子阱为例,讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。     

On Exciton Decoherence in Quantum Dots

The effects resulting due to dressing of an exciton with phonons are analyzed as the source of unavoidable decoherence of orbital degrees of freedom in quantum dots. The dressing with longitudinal optical phonons results in energetic shift of order of a few meV even of the ground state of exciton in a state-of-the-art InAs/GaAs dot and the mediating role of longitudinal acoustical phonons is essential in this process. The characteristic time needed for dressing of the exciton with optical phonons is of a picosecond order. That time can be regarded as the lower limit for decoherence for optically driven quantum gates employing self-assembled quantum dot structures.     

压力及屏蔽对无限深量子阱中施主结合能的影响

对GaAs/Al_xGa_1-xAs和GaN/Al_xGa_1-xN无限深量子阱系统,考虑压力及屏蔽效应,利用变分方法数值计算这两种系统中的杂质态结合能。给出了结合能随阱宽和压力的变化关系,同时讨论了有无屏蔽时的区别。结果表明,结合能随压力增大而增大,随阱宽增大而减小;屏蔽效应随着压力的增加而增加,并且显著降低了杂质态的结合能。     

Positively Charged Exciton in Double-Layer Quantum Dots

The Hamiltonian equation for positively charged exciton in double-layer harmonic quantum dots is solved numerically by using the exact diagonalization techniques. We find that the correlation energy Ec of positively charged exciton increases with increasing the confinement strength and the binding energy decreases obviously for the heavy hole.     

Exciton effects on nonlinear electro-optic effects in semi-parabolic quantum wires

The nonlinear electro-optic effects in quasi-one-dimensional semi-parabolic quantum wires are studied, in which the exciton effects are taken into account. The analytical expression of the electro-optic co-efficient is derived by compact density-matrix approach. Finally, the numerical results are presented for GaAs/AlGaAs semi-parabolic quantum wires. The results show that the electro-optic coefficient is over two times bigger than that obtained by without considering exciton effects. Furthermore, the electro-optic coefficient is related to the relaxation time.     

Positively Charged Exciton in Double-Layer Quantum Dots

The Hamiltonian equation for positively charged exciton in double-layer harmonic quantum dots is solved numerically by using the exact diagonalization techniques. We find that the correlation energy Ec of positively charged exciton increases with increasing the confinement strength and the binding energy decreases obviously for the heavy hole.