THERMOELECTRIC POWER IN (Gd, Sm)1.85Ce0.15CuO4 SYSTEM

Thermoelectric power measurements are reported for seven samples with different x in the Gd_1.85-xSm_xCe_0.15CuO₄ system at temperatures ranging from 80K to 300K. For Sm-rich superconducting samples, thermoelectric power S has a small negative value and is almost temperature independent. As the content of Sm decreases, the absolute value of S increases and a broad valley appears in the S(T) curve. The results which can be interpreted in terms of a two-channel model support the existence of mid-gap states with Fermi level close to the minimum of the density of states as well as the coexistence of electron and hole carriers. It is suggested that a linear temperature dependence of S with a small negative slope is close to the intrinsic behavior in the a-b plane of normal states for superconducting samples.     

Intergrain and intragrain superconductivity in Sn- and Sb-doped Bi1.7Pb0.3Sr2Cu3Oy

Measurements of the resistivity and current dependent resistivity for small current densities ranging from 0.03 A/cm² to 3.0 A/cm² were performed with two Sn-doped and two Sb-doped polycrystalline Bi_1.7Pb_0.3Sr₂Ca₂Cu₃O_y samples in magnetic fields up to 1.7 T. Features in the temperature derivative of the resistivity curves were associated with the presence of a superconducting transition between superconducting grains, coupled by weak links with a distribution of critical currents and critical temperatures, and the superconducting transition within grains. The transition between grains was more strongly suppressed in temperature with the application of a magnetic field in samples with weaker coupling between grains. The presence of a transition in a magnetic field due to weak links between grains was verified at 77 K by the observation of a current dependent resistivity in a magnetic field.     

Chemical pressure effect on the superconductor MgCNi3

In order to investigate the positive and negative pressure effects on superconducting properties for MgCNi₃, chemical pressure was applied by means of Zn-doping to Mg site (Mg_1−xZn_xCNi₃) and by substituting Mg with Cd (CdCNi₃). The lattice constant decreases (increases) with increasing Zn (Cd) content. In the magnetic measurements, superconducting transition temperature (T_c) is decreasing with increasing Zn content and disappears at x > 0.3. While for CdCNi₃, T_c also decreases down to 3.4 K. The result seems not to be fully understandable in the case of CdCNi₃ since T_c seems to rise owing to the increase of density of states at Fermi energy caused by lattice expansion.     

Electric Field Induced Permanent Superconductivity in Layered Metal Nitride Chlorides HfNCl and ZrNCl

Devices of electric double-layer transistors(EDLTs) with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage V_G at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature T_c of 24 and 15 K is realized in single crystals and polycrystalline samples of HfNCl and ZrNCl upon applying proper V_G's at different temperatures.Reversible change between insulating and superconducting states can be obtained by applying positive and negative V_G at low temperature such as 220 K, whereas V_G's applied at 250 K induce the irreversible superconducting transition. The upper critical field H_(c2) of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper V_G's at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.     

Temperature pulse induced thermal instability in Y1Ba2Cu3O7−δ superconductors

As a common effect of a large and variable temperature gradient and a temperature pulse, a thermal instability of a new type has been observed in high-T_c superconductors. The primary effect is the temporal change of local energy density, that causes a dynamic state of simultaneously coexisting normal and superconducting domains, establishing a spatial and temporal variation of superconducting and normal states. The fluctuation of the ratio of the superconducting and normal volume fractions can be detected by the oscillation of DC and AC voltages measured on the samples. Supposing that every jump of the AC voltage represents the transformation of a single coherent domain, it leads to the average value of the linear dimension of domains as 2.1 mm, characteristic time of the transformation as 7.5 s and velocity of the propagation of this effect as 0.3 mm/s in the case of Y₁Ba₂Cu₃O_7−δ specimens. The macroscopic consequence of the thermal disturbance introduced into the sample is the appearance of a giant flux creep. Its existence is confirmed by comparison of our measurements to others, by analytical and numerical calculations of the forces acting on the vortices and by evaluation of the effect of the huge fluctuation created in the samples by our experiments.     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

采用快速升温烧结方法生长Tl-1223超导薄膜的研究

报道了在铝酸镧(00l)衬底上生长Tl-1223超导薄膜的快速升温烧结方法以及铊(Tl)源陪烧靶的配比对Tl-1223薄膜晶体结构的影响.扫描电子显微镜观测表明,采用快速升温烧结方法生长的Tl-1223超导薄膜具有致密的晶体结构.X-射线衍射等测试表明,采用合适配比的陪烧靶在氩气环境下可以制备出纯c轴取向的Tl-1223超导薄膜,充氧退火后的薄膜具有较好的电学性能,其临界转变温度T_(c onset)达到116K,临界电流密度达到1.5MA/cm~2(77 K,0 T).实验结果表明,采用这一新的烧结方法制备Tl系超导薄膜具有升降温时间和恒温时间短、生产成本低等特点.     

铁基超导体Li0.8Fe0.2ODFeSe的红外光谱研究

测量和研究了铁基超导体Li_0.8Fe_0.2ODFeSe单晶的红外光学响应,发现室温下光电导率谱不存在Drude分量,载流子具有非相干输运行为.随着温度降低,Drude分量形成并不断变窄,同时在相应的反射率谱上出现清晰的等离子体边,表明散射率急剧降低.在最低温度,观察到超导能隙形成导致的光谱变化,光电导率谱在160 cm^-1以下受到显著压制.对比FeSe单晶的光谱数据,发现整体的光电导率谱型很相似,但自由载流子的谱重更低,揭示出样品具有更低的载流子浓度.另外还观察到温度变化诱导的谱重由低频向高频区域转移的现象,表明其存在强关联效应.     

FeSe基超导单晶与薄膜研究新进展:自旋向列序、电子相分离及高临界参数

FeSe基超导体的超导临界温度可大范围调控,物理现象丰富,是非常规超导机理研究的热点.由于较高的超导临界参数及易于加工等特点,FeSe基超导体在超导应用开发方面也日益受到重视.大尺寸高质量的单晶和薄膜形态的FeSe基超导材料,对于相关基础科学研究和应用开发都极为重要.作者近年来先后开发和发明了水热离子交换（ion-exchange）、离子脱插（ion-deintercalation）、基底辅助水热外延生长方法,成功解决了二元FeSe和插层（Li,Fe）OHFeSe超导体高质量单晶和薄膜的生长和物性调控难题.进而在相关物理问题的研究中取得新进展,包括发现二元FeSe中自旋向列序与超导电性密切相关,观测到（Li,Fe）OHFeSe中的电子相分离现象.此外,（Li,Fe）OHFeSe超导薄膜呈现很高的超导临界电流密度和上临界磁场,其应用前景值得关注.     

单层FeSe薄膜/氧化物界面高温超导

单层FeSe/SrTiO₃界面增强超导的发现为理解高温超导机理提供了一个新的途径,也为实现新的高温超导体开拓了新思路.本文通过在SrTiO₃（001）表面高温沉积Mg进而沉积单层FeSe薄膜,制备出了FeSe/MgO双层/SrTiO₃异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性,观测到约14–15 meV的超导能隙,比体相FeSe超导能隙值增大了5–6倍,与K掺杂双层FeSe/SrTiO₃的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO₂之后的一个新界面超导体系,为研究界面高温超导机理提供了新载体.     

Evolution of superconductivity and charge order in pressurized RbV3Sb5

The kagome metals AV₃Sb₅(A=K,Rb,Cs)under ambient pressure exhibit an unusual charge order,from which superconductivity emerges.In this work,by applying hydrostatic pressure using a liquid pressure medium and carrying out electrical resistance measurements for RbV₃Sb₅,we find that the charge order becomes suppressed under a modest pressure pc(1.4 GPa3Sb₅.Our findings point to qualitatively similar temperature-pressure phase diagrams in KV₃Sb₅ and RbV₃Sb₅,{and suggest a close link}between the second superconducting dome and the high-pressure resistance anomalies.     

准一维Cr基超导体RbCr3As3的超导能隙

RbCr₃As₃是具有[（Cr₃As₃）^-]_∞线性链的准一维超导体,超导转变温度约为6.6 K.对RbCr₃As₃单晶进行了电输运和极低温热输运性质的研究.低温下,拟合了RbCr₃As₃正常态电阻率随温度的变化,发现其满足费米液体行为.通过拟合超导转变温度随磁场的关系,得到RbCr₃As₃单晶的上临界场约为25.6 T.对RbCr₃As₃进行了零场下的极低温热导率测量,得到其剩余线性项为7.5 μW·K^-2·cm^-1,占正常态热导率值的24%.测量不同磁场下RbCr₃As₃的热导率,发现与单带s波超导体相比较,RbCr₃As₃剩余线性项随磁场增加相对较快.这些结果表明RbCr₃As₃单晶很可能是有节点的非常规超导体.     

Low temperature electrical resistivity studies and search for superconductivity in Ti-B system

Resistivity of TiB_x alloy has been measured for three different compositions. The alloys contain the three known phases TiB₂, TiB and Ti₃B₄ and unknown phase/phases. Resistivity measurements between room temperature and 77 K show that there is no superconducting transition in this range of temperature contrary to some recent reports. Resistivity shows a small anomaly at low temperature which is attributed to the unknown phase.     

二维钾、钠紫青铜单晶A0.9Mo6O17(A=K,Na)的热电势特性

在８０—２８０Ｋ范围内对准二维钾、钠紫青铜单晶的热电势与温度的关系进行了研究，发现：（１）对钾紫青铜，在１０５Ｋ附近热电势有符号变化，并且在高温正常金属相，热电势Ｓ具有较小的负值，可以用经验关系Ｓ＝ＡＴ＋Ｂ来描述，自由电子为支配载流子；而在Ｔ＜１０５Ｋ的低温ＣＤＷ态，Ｓ为正值，可表示为Ｓ＝Ａ′Ｔ＋Ｂ′／Ｔ的形式，载流子的声子曳引热电势占支配作用．（２）对钠紫青铜，在Ｔ＞８０Ｋ范围内Ｓ与Ｔ具有很好的线性关系，没有观察到Ｐｅｉｅｒｌｓ相变，电子为支配载流子．对造成两者差异的根源，也作了初步探讨 关键词：     

Ga掺杂对Cu_3SbSe_4热电性能的影响

采用熔融-淬火方法制备了Cu_(2.95)Ga_xSb_(1-x)Se_4(x=0,0.01,0.02和0.04)样品,系统地研究了Ga在Sb位掺杂对Cu_3SbSe_4热电性能的影响.研究结果表明,少量的Ga掺杂(x=0.01)可以有效提高空穴浓度,抑制本征激发,改善样品的电输运性能.掺Ga样品在625 K时功率因子达到最大值10μW/cm·K~2,比未掺Ga的Cu_(2.95)SbSe_4样品提高了约一倍.但是随着Ga掺杂浓度的进一步提高,缺陷对载流子的散射增强,同时载流子有效质量增大,导致载流子迁移率急剧下降.因此Ga含量增加反而使样品的电性能恶化.在热输运方面,Ga掺杂可以有效降低双极扩散对热导率的贡献,同时掺杂引入的点缺陷对高频声子有较强的散射作用,因此高温区的热导率明显降低.最终该体系在664 K时获得最大ZT值0.53,比未掺Ga的样品提高了近50%.     

Structural and transport properties of the triple-layer compounds Ba4(Pb1−xBix)3O10 (0≤ x<0.3)

A series of new compounds Ba₄(Pb_1−xBi_x)₃O₁₀ with 0≤x<0.3 has been prepared and characterized by X-ray and electron diffraction. The d.c. resistivity vs. temperature data for different x values are presented and structural features are compared to those of the superconducting phase Ba(Pb_1−xBi_x)O₃. The “mother-compound” Ba₄Pb₃O₁₀ is tetragonal, with lattice constants A=0.4280(1) and C=3.017(1) nm. Its structure can be regarded as a stacking of Ba(PbBi)O₃ triple-layers, separated by single BaO layers. Electron diffraction reveals the presence of a weak superstructure with the a-axis related to that of the perovskite by a=√2a_p. Frequent intergrowth of this phase with the perovskite structure is observed. The conductivity of the samples Ba₄Pb₃O₁₀ is nearly independent of temperature, while Bi-doped samples exhibit semiconductor-like behaviour at low temperature. No superconducting transition is observed down to 2K.     

Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content

Photoluminescence(PL) spectra of two different green InGaN/GaN multiple quantum well(MQW) samples S1 and S2,respectively with a higher growth temperature and a lower growth temperature of InGaN well layers are analyzed over a wide temperature range of 6 K-3 30 K and an excitation power range of 0.001 mW-75 mW.The excitation power-dependent PL peak energy and linewidth at 6 K show that in an initial excitation power range,the emission process of the MQW is dominated simultaneously by the combined effects of the carrier scattering and Coulomb screening for both the samples,and both the carrier scattering effect and the Coulomb screening effect are stronger for S2 than those for S1;in the highest excitation power range,the emission process of the MQWs is dominated by the filling effect of the high-energy localized states for S1,and by the Coulomb screening effect for S2.The behaviors can be attributed to the fact that sample S2 should have a higher amount of In content in the InGaN well layers than S1 because of the lower growth temperature,and this results in a stronger component fluctuation-induced potential fluctuation and a stronger well/barrier lattice mismatchinduced quantum-confined Stark effect.This explanation is also supported by other relevant measurements of the samples,such as temperature-dependent peak energy and excitation-power-dependent internal quantum efficiency.     

铁硒基超导研究新进展:高质量(Li,Fe)OHFeSe单晶薄膜

单晶薄膜形态的高温超导材料对于相关基础科学研究和应用开发都极为重要.多带的铁基高温超导体往往呈现丰富的物理现象,并具有较高的超导临界参数.特别是近年发现的插层（Li,Fe）OHFeSe超导体,无论对高温超导机理还是应用研究而言,都日益受到重视,已成为铁基家族中重要的典型材料.但是,该化合物含有OH键,加热易分解.因此,现有的常规高温成膜技术均不适用于生长该薄膜材料.为解决这一生长难题,我们最近发明了基体辅助水热外延生长法,实现了超导薄膜制备技术上的突破.本文简要介绍用此软化学成膜技术首次成功制备出（Li,Fe）OHFeSe单晶薄膜.该薄膜材料具有优良的结晶质量和较高的超导临界参数,特别是其高的临界电流密度和上临界场对应用开发有实际价值.因此,（Li,Fe）OHFeSe超导单晶薄膜的成功合成,为机理研究和应用开发分别提供了重要的实验载体和备选材料.另外,该薄膜技术也有望应用于其他功能材料的探索与合成,尤其是对常规手段难以获取的材料更具重大价值.     

Cu NMR study of the superconducting thiospinel Cu1.5Rh1.5S4

The ⁶³Cu NMR Knight shift K and spin-lattice relaxation rate 1/T₁ have been measured to study the thiospinel superconductor Cu_1.5Rh_1.5S₄ from a microscopic viewpoint. K is negative and has a weak dependence on temperature, and the hyperfine coupling constant H_hf^d is estimated to be −52.4 kOe/μ_B. 1/T₁ is proportional to the temperature in the normal state. In the superconducting state, 1/T₁ takes a coherence peak just below T_c, and decreases exponentially well below T_c, from whose temperature dependence the superconducting energy gap has been proved to be close to 2Δ = 3.52k_BT_c given by the BCS theory.