VO_2薄膜Vis-NIR及NIR-MIR椭圆偏振光谱分析

采用射频磁控溅射在石英玻璃基底上反应溅射制备单斜相(M相)VO_2薄膜.利用V-VASE和IR-VASE椭圆偏振仪及变温附件分别在0.5—3.5 eV(350—2500 nm)和0.083—0.87 eV(1400—15000 nm)入射光能量范围内对相变前后的VO_2薄膜进行光谱测试,运用逐点拟合的方式,并通过薄膜的吸收峰的特征,在0.5—3.5 eV范围内添加3个Lorentz谐振子色散模型和0.083—0.87 eV范围内添加4个Gaussion振子模型对低温态半导体态的薄膜椭偏参数进行拟合,再对高温金属态的薄膜添加7个Lorentz谐振子色散模型对进行椭偏参数的拟合,得到了较为理想的拟合结果.结果发现:半导体态的VO_2薄膜的折射率在近红外-中红外基本保持在最大值3.27不变,且消光系数k在此波段接近于零,这是由于半导体态薄膜在可见光-近红外光范围内的吸收主要是自由载流子吸收,而半导体态薄膜的d//轨道内的电子态密度较小.高温金属态的VO_2薄膜的折射率n在近红外-中红外波段具有明显的增大趋势,且在入射光能量为0.45 eV时大于半导体态的折射率;消光系数k在近红外波段迅速增大,原因是在0.5—1.62 eV范围内,能带内的自由载流子浓度增加及电子在V_(3d)能带内发生带内的跃迁吸收,使k值迅速增加;当能量小于0.5 eV时k值变化平缓,是由于薄膜内自由载流子浓度和电子跃迁率趋于稳定所致.     

Theory of the effect of a DC magnetic field on surface space-charge-wave/optical phonon instabilities in semiconductor media

A theoretical investigation has been carried out on the effect of a DC magnetic field on surface space-charge-wave instabilities caused by a drift current parallel to the surface of a doped polar semiconductor. The magnetic field is taken as perpendicular to the semiconductor surface. The dispersion relation is obtained using a generalization of the Kliewer-Fuchs specular-reflection boundary conditions. Calculated results are obtained in the non-retarded limit for two cases: (1) where a current-carrying, nonpolar semiconductor interfaces a polar insulator half-space and (2) where a current-carrying, polar semiconductor interfaces a nonpolar insulator half-space. Convective or amplifying instabilities arise because of the presence of optical phonons. Numerical results are presented for the gain as a function of frequency and magnetic field.     

Transport properties of orbitally hybridized organic semiconductors

A microscopic theory based on the orbital hybridization model via single orbital approximation is developed to calculate the current variation in organic semiconductors that are coupled to the external orbits from the environment. The charge transfer resulted from the orbital hybridization between the environment and the organic semiconductor rebuilds the energy levels and eventually alters the transport properties of the organic semiconductor. Two parameters in our theory, the orbital energy level of the environment relative to the energy level of organic semiconductor and the orbital hybridization interaction, dominate the current variation in the organic semiconductors. Our results show that the suppression of atomic dimerization due to orbital hybridization gives rise to an increase of electrical conduction in organic semiconductor. Also, after coupling with the environment, the charge-donating organic semiconductors are more conductive than the charge-accepting ones.     

Orbital magnetization in semiconductors

This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2--10^-1 effective Bohr magneton and 10^-1--1 e²/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.     

高性能ZnO纳米块体材料的制备及其拉曼光谱学特征

利用六面顶高压设备制备了高密度、低脆性、纳米级的ZnO块体材料，用MDI/JADE5 X射线衍射仪(Cu靶)和XL30S-FEG场发射扫描电子显微镜对高压样品的相组成、晶粒尺寸及微观形貌进行了表征.利用E55+FRA106/5傅里叶变换激光拉曼光谱仪通过ZnO块体样品位于50—500cm^-1之内的拉曼光谱, 研究了极性半导体纳米材料的拉曼光谱学特征.发现在极性半导体ZnO纳米块体材料中，没有出现明显的尺寸限制效应. 关键词： ZnO纳米块体 拉曼光谱 尺寸限制效应     

全势能线性Muffin-Tin轨道组合分子动力学方法及其在半导体团簇结构计算中的应用

研究原子团簇的结构及其与之相关的物理和化学的性质是当前国际上一个活跃的研究前沿。全势能线性Muffin Tin轨道组合法是目前国际上最先进的第一性原理分子动力学方法之一。本文简要地阐述了全势能线性Muffin Tin轨道组合法的原理 ,以及本研究小组用此方法在半导体原子团簇结构研究中的部分结果。     

Hot-Electron Transport and Coupled-Mode Optic Phonon in a Polar Semiconductor

The effect of coupled-mode-LO phonons on the electronic transport in a polar semiconductor is studied within a model which takes the internal thermalization time of the LO phonon system and the relaxation time of the whole lattice as parameters. Our analysis shows that although the hot-electron energy-loss to LO phonons is drastically enhanced and the LO-phonon-induced linear mobility is markedly reduced by the formation of coupled modes at low temperatures, in a realistic polar semiconductor when all the scattering mechanisms included, the coupled-mode effect on the transport properties is almost buried.     

掺杂半导体/金属膜系的光谱透射反射特性

提出了以改变半导体薄膜的掺杂浓度来调节它的等离子体频率ω_p,使它的高透射区移至可见光带.选择本征吸收频率在近紫外区的金属与之构成最佳的D/M光谱透射-反射膜系,同时结合掺杂半导体膜与金属膜的最佳厚度组合以形成较理想的透明隔热复合膜. 关键词：     

Subband structure and kinetic characteristics of thin films of gapless semiconductors

The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.     

x射线磁性圆二色吸收谱分析Co膜厚度对原子磁矩和自旋磁矩的影响

利用软x射线磁性圆二色吸收谱(XMCD)研究了Si衬底上沉积的不同厚度的Co膜的轨道磁矩和 自旋磁矩.样品是磁控溅射方法制备的，膜的厚度分别是2nm,10nm和30nm，并在表面覆盖0.8 —1nm厚的金膜防止样品的氧化.根据XMCD求和定则计算得到的轨道磁矩和自旋磁矩分别是0. 249—0.195μ_B(玻尔磁子)和1.230—1.734μ_B.随着膜厚的减小，C o原子的轨道磁矩增加，而自旋磁矩下降.轨道磁矩与总磁矩的比值由0.101上升至0.168，即 2nm膜中Co原子的轨道磁矩对总磁矩的贡献比30nm膜中Co原子的大了83%. 关键词： x射线磁性圆二色 磁性薄膜 轨道磁矩和自旋磁矩 厚度效应     

Measurement of the Metal-Semiconductor Contact Resistance and Control of the Specific Resistance of Semiconductor Films

A potential distribution is determined for thin semiconductor films with two identical circular contacts on the film surface. Analytic expressions for calculating the metal-semiconductor contact resistance and the specific resistance of semiconductor films are presented. The boundary conditions are taken into account in some important practical cases. The conditions of applicability of the given technique for calculating metal-semiconductor contact resistances are examined. The results obtained by solving the boundary problems are independent of the conductivity of the film material and are electrodynamic in character.     

Influence of ultrasonic cavitation on passive film of stainless steel

The electrochemical behaviors of passive film of stainless steel 0Cr13Ni5Mo under the condition of static state (quiescence) and ultrasonic cavitation in the HCl solution have been studied by means of polarization curve, electrochemical impedance spectroscopy (EIS) and capacitance potential measurement. The results indicate that the passive film shows a multi layer structure distribution, and presents a p-type semiconductor property under the condition of quiescence. The stability of passive film decreases, the semiconducting property changes to an n-type semiconductor in the presence of cavitation. The amount of transition electrons from valence band because of cavitation is related to the height of Fermi level of passive film semiconductor.     

Influence of Rashba spin-orbit coupling on Josephson effect in triplet superconductor/two-dimensional semiconductor/triplet superconductor junctions

We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with p-wave orbital symmetries and separated by a two-dimensional (2D) semiconductor channel with strong Rashba spin-orbit coupling. In triplet superconductors, three types of orbital symmetries are considered. We use Bogoliubov-de Gennes formalism to describe quasiparticle propagations through the junction and the supercurrents are calculated in terms of Andreev reflection coefficients. The features of the variation of the supercurrents with the change of the strength of Rashba spin-orbit coupling are investigated in some detail. It is found that for the three types of orbital symmetries considered, both the magnitudes of supercurrent and the current-phase relations can be manipulated effectively by tuning the strength of Rashba spin-orbit coupling. The interplay of Rashba spin-orbit coupling and Zeeman magnetic field on supercurrent is also investigated in some detail.     

铁磁性高锰硅化物Mn_4Si_7电子特性的第一性原理计算

本文采用基于第一性原理的密度泛函理论超软雁势平面波方法,对铁磁性半导体高锰硅化合物Mn_4Si_7进行了理论计算.结果表明块体Mn_4Si_7是准直接带隙半导体材料,其价带主要是由Mn的3d轨道电子构成,导带主要是由Mn的3d及Si的3p轨道电子构成.相同自旋轨道下,自旋向下态的电子更容易占据较高的能级.而自旋向上态的电子对Mn_4Si_7的禁带宽度起主导作用. Mn_4Si_7的费米能级附近各轨道未被电子占满,且自旋向上态与自旋向下态电子的不对称分布使其具有了磁性.为Mn_4Si_7磁学特性提供主要贡献的是Mn的3d轨道电子,而Si的3p和3s轨道电子提供了一个小的贡献.     

离子束增强沉积VO_2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2 O5粉末直接制备了VO2 多晶薄膜 .实验测试表明 ,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好 ,薄膜的电阻温度系数 (TCR)最高可达 4 2 3% K .从成膜机理出发 ,较详细地讨论了离子束增强沉积VO2 多晶薄膜的TCR高于VOx 薄膜的TCR的原因 .分析认为 ,单一取向的VO2 结构使薄膜晶粒具有较高的电导激活能 ,致密的薄膜结构减少了氧空位和晶界宽度 ,使离子束增强沉积VO2 多晶薄膜结构比其他方法制备的VOx 薄膜更接近于单晶VO2 是其具有高TCR的原因     

Effect of surface chemisorption on the spin reorientation transition in magnetic ultrathin Fe film on Ag(0 0 1)

We have investigated the effect of surface chemisorption on the spin reorientation transitions in magnetic ultrathin Fe films on Ag(0 0 1) by means of the polar and longitudinal magneto-optical Kerr effect (MOKE) and X-ray magnetic circular dichroism (XMCD) measurements. It is found by the MOKE that adsorption of O₂ and NO induces the shift of the critical thickness for the transitions to a thinner side, together with the suppression of the remanent magnetization and the coercive field of the Fe film. This implies destabilization of the perpendicular magnetic anisotropy. On the other hand, H₂ adsorption is found not to change the magnetic anisotropy, though the enhancement of the coercive field is observed. The XMCD reveals that although both the spin and orbital magnetic moments along the surface normal are noticeably reduced upon O₂ and NO adsorption, the reduction of the orbital magnetic moments are more significant. This indicates that the destabilization of the perpendicular magnetic anisotropy upon chemisorption of O₂ and NO originates from the change of the spin-orbit interaction at the surface.     

基于一维TiO_2纳米管阵列薄膜的β伏特效应研究

介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的影响.通过与镍-63辐射源的集成封装,形成三明治结构镍-63/二氧化钛纳米管阵列薄膜/钛片的β伏特同位素电池.实验结果表明,基于氩气氛围下450?C退火的黑色二氧化钛纳米管阵列薄膜具有高的氧空位缺陷浓度和宽的可见-紫外吸收光谱.在使用β辐射总能量为10 m Ci的镍-63辐射源时,同位素电池的开路电压为1.02 V,短路电流75.52 n A,最大有效转换效率为22.48%.     

小分子掺杂高分子半导体薄膜中异质结结构光谱学特性研究

利用稳态吸收和荧光光谱学、瞬态荧光光谱学(时间相关单光子计数技术)系统研究了EPPTC掺杂的F8BT薄膜异质结结构中激发复合体的形成机理和荧光发射特性,并表征了其特征光谱和荧光发射寿命. 其特征主要体现在显著延长的荧光发射寿命和红移的荧光发射光谱.这对于理解有机半导体材料异质结结构形成的机理和光物理学特性研究提供了多方面的实验依据.同时,由于这两种材料混合后的吸收光谱较宽范围地覆盖了可见光谱区,这样的有机半导体掺杂工艺对于有机光伏器件和太阳能电池器件的应用研究具有重要意义.     

Field-effect transistor based on a combination of nanometer film and undoped semiconductor

The metal oxide nanometer film semiconductor field-effect transistor (MONSFET) is reported. In this device, a combination of undoped semiconductor and nanometer film serves as the active layer. When a negative gate-source voltage is applied, electrons from the nanometer film enter into the semiconductor layer to form the conducting channel, and the drain current increases without saturation. This structure makes more materials available for the active layer, and thus suggests a new route to enrich the applications as well as to enhance the performances.     

Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires

Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carried out. With increasing incident laser wavelength from 488 to 633 nm there is a huge difference in Raman intensity enhancement for the LO/IF peaks and the TO peak. This has been interpreted as due to Fröhlich interaction and abundant defects in polar nano-scale semiconductor materials.