INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.     

Dielectric Properties of Fine-Grained BaTiO3 Ceramics under High Pressure

We investigate the temperature dependence of the dielectric constant of BaTiO3 ceramic with coarse to nanograin size under different hydrostatic high pressures up to 5000 bar in the range between room temperature and 200℃. The ferroelectric-to-paraelectric phase transition temperatures Tc are determined from the peak of dielectric constant versus temperature. The values of average grain-size are estimated from the SEM images. It is found that the magnitude of dTc/dp varies considerably from sample to sample depending on grain size. The Curie point Tc of the sample with small grain size decreases more sharply than that of samples with larger one.     

Ferroelectric Transition and Curie-Weiss Behavior in Some Filled Tungsten Bronze Ceramics

Ferroelectric transitions in filled tungsten bronze ceramics Sr4R2Ti4Nb6O30, Sr5RTi3NbT030 （R=La, Nb, Sm ＆ Eu） and Ba4Nd2Ti4Nb6030 are investigated with differential scanning calorimetry （DSC） and the Curie- Weiss law fitting to the dielectric constant. The magnitude of the Curie Weiss constant C - 105 suggests displacement-type ferroelectric transition in the present compounds. The large AT difference between dielectric maximum temperature Tm and Curie-Weiss temperature To） values indicate the difficult formation of ferroeleetric domains or polar nanoregions in the present compounds and also the characteristics of the first order ferroelectric transition. Three categories are suggested for the ferroelectric transition in the above tungsten bronzes. The ferroelectric transition exhibits large thermal hysteresis. According to the DSC results, gradual recovery of the endothermic peak occurs after aging at temperature below the Curie point, indicating the gradual stability of the ferroelectric phase after cooling from the high-temperature para-electric phase. The relationship between the Curie- Weiss law fitting parameters and the nature of the ferroelectric transition is modified for the filled tungsten bronzes.     

Grain-Size Effect on the Dielectric Properties of Bi0.5Na0.5TiO3

We prepared bismuth sodium titanate (Bi0.5Na0.5TiO3)ultrafine powders by the sol-gel method.The dielctric properties of the pressed pellets and fired ceramics with different grain sizes as a function of tempernature at various frequencies were studied.With decreasing grain size,the dielecric anomaly around 200℃ increases,while the dielectric thermal hysteresis decreases,All the samples with grain sizes larger than 100nm show dielectric peaks at temperature of about 350℃.The very little change in Tm observed down to the critical size indicates that Bi0.5Na0.5TiO3 is an order-disorder system above 200℃,In addition,the dielectric peak becomes lower with decreasing grain size and the ferroelectric critical size of Bi0.5Nan0.5TiO3 was eventually determined to be about 100nm according to the disappearance of dielectric peak.     

Relaxation of Dielectric Loss Peak over Intermediate Temperature Range in Bi5TiNbWO15 Intergrowth

A dielectric loss peak with relaxation-type characteristic is observed in Bi5TiNbWO15 over 200-400℃. The modified Cole-Cole relation by introducing relaxation strength as another important fitting parameter is used to describe this temperature-dependent behaviour of dielectric relaxation process. This peak is considered to be associated with the oxygen vacancies inside the grains and with its activation energy by relaxation determined to be 0.76eV. The obtained broadening factor α is around 0.4, which indicates a strong correlation between those relaxation units. It is confirmed that the behaviour of this peak is due to the combined effects of the dielectric relaxation and electrical conduction by the thermal motion of oxygen vacancies. These results axe further confirmed in Bi5TiNbWO15 samples through oxidization atmosphere treatment and Nd modification respectively.     

Field-Induced Domain Reorientation and Polarization Rotation of <110> Oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

Polarization hysteresis loops, x-ray diffraction and temperature dependent dielectric constant under different electric fields for <110> oriented 0.7PMN-0.3PT crystals are measured. The field-induced phase transition and the process of depolarization are discussed. The results show that with the electric field E increasing, the single-crystal form changes from the relaxor state of rhombohedral to normal rhombohedral, then to a monoclinic state via polar-axis reorientation and polarization rotation. Orthorhombic phase may present when E≥10kV, but it is an unstable form after E removal. The depolarization process is not just the reversal of the polarization process. It is noticed that only the temperature-dependent dielectric behaviour is not enough to judge the processes of the E-field induced phase transition.     

Improvement of sintering,nonlinear electrical,and dielectric properties of ZnO-based varistors doped with TiO_2

The effects of TiO_2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO_2–0.5Co_2O_3-0.5Bi_2O_(3–x)TiO_2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO_2 doping.The addition of TiO_2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO_2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.     

Effects of filler loading and surface modification on electrical and thermal properties of epoxy/montmorillonite composite

Epoxy-based composites containing montmorillonite(MMT) modified by silylation reaction with γ-aminopropyltriethoxysilane(γ-APTES) and 3-(glycidyloxypropyl) trimethoxysilane(GPTMS) are successfully prepared.The effects of filler loading and surface modification on the electrical and thermal properties of the epoxy/MMT composites are investigated. Compared with the pure epoxy resin, the epoxy/MMT composite, whether MMT is surface-treated or not, shows low dielectric permittivity, low dielectric loss, and enhanced dielectric strength. The MMT in the epoxy/MMT composite also influences the thermal properties of the composite by improving the thermal conductivity and stability.Surface functionalization of MMT not only conduces to the better dispersion of the nanoparticles, but also significantly affects the electric and thermal properties of the hybrid by influencing the interfaces between MMT and epoxy resin.Improved interfaces are good for enhancing the electric and thermal properties of nanocomposites. What is more, the MMT modified with GPTMS rather than γ-APTES is found to have greater influence on improving the interface between the MMT filler and polymer matrices, thus resulting in lower dielectric loss, lower electric conductivity, higher breakdown strength, lower thermal conductivity, and higher thermal stability.     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

INTERNAL FRICTION AND ULTRASONIC ATTENUATION RELATED TO CARRIERS IN HIGH Tc SUPERCONDUCTORS

For both BiSrCaCuO and TlBaCaCuO samples, internal frictions (Q^-1) in the kHz range reveal a plateau (Q^-1_p) above T_c and a rapid drop below T_c with the turning points located just at T_c for various samples with different T_c. This anomaly cannot be observed in non-superconducting samples. The ultrasonic attenuation (α) in TlBaCaCuO displays similar results to the internal friction. Moreover, it is discovered that the Q^-1_p is nearly proportional to the carrier density for Y(Pr)BaCuO and Gd(Pr)BaCuO with different Pr contents. These results show that the drop of Q^-1 and a below T_c is closely related to superconducting condensation. The Q^-1_p and α_p can be explained using coupling-model of carriers with local dynamic distortion because high T_c superconductors are strong-correlation systems. Furthermore, by taking account of the smearing of superconducting gap structure resulting from the recombination of quasi-particles and by modifying the BCS relative jump rate as S(E, E', Γ) = Re{1-Δ²/[(E-iΓ)(E'-iΓ)]}, the calculated results of internal friction and ultrasonic attenuation below T_c are in good agreement with the experimental data. The superconducting gap Δ and the damping rate Γ for both BiSrCaCuO and TlBaCaCuO have also been obtained, they are in accordance with those got by tunneling spectrum and NMR methods, etc.     

Tb掺杂双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7的磁熵变和电输运性质

研究了Tb掺杂对双层锰氧化物La_(4/3)Sr_(5/3)Mn_2O_7磁熵变和电输运性质的影响.样品采用传统固相反应法制备,两样品的名义组分可以表示为(La_(1-x)Tb_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.025),磁场为7 T时的最大磁熵变?S_M分别为-4.60 J/(kg·K)和-4.18 J/(kg·K).比较后发现,Tb元素的掺杂使得最大磁熵变值减小,但同时增大了相对制冷温区.电性测量结果表明,x=0.025的样品在高温区的导电机制可以用小极化子模型解释,与母体三维变程跳跃模型不同;当温度降低至三维长程铁磁有序温度(T_c~(3D))附近时,掺杂样品发生金属绝缘相变;掺杂后样品在T_c~(3D)附近,磁电阻取得极大值(约为56%),表明是本征磁电阻效应.     

Eu3+掺杂的铌酸钠钾陶瓷的制备及性能研究

采用固相烧结法制备了Eu³⁺掺杂的铌酸钠钾（KNN）陶瓷。用X射线粉末衍射仪、荧光光谱测试仪和LCR精确阻抗测试仪等对其结构、发光性能和介电性能进行表征。XRD结果显示样品为钙钛矿结构。荧光分析结果表明,致密度对KNN陶瓷材料发光性能有一定的影响,Eu³⁺掺杂量是影响其发光性能的重要因素。其中掺杂Eu摩尔分数为4%的样品在930℃焙烧后其发光最强,在396 nm紫外光激发下,发射光谱最强峰在614 nm,对应于Eu³⁺的⁵D₀-⁷F₂电偶极跃迁。样品经3 kV/cm、110℃极化30 min后进行压电性能检测,结果表明提高Eu³⁺掺杂量以及陶瓷的致密度,可改善压电性能。其中掺杂4%Eu的KNN压电常数D₃₃最大为98 pC/N,在1 kHz、100℃时,介电常数最小为217,介电损耗tanθ=0.199,且仍然保持较高的居里温度T_c=426℃。     

INFLUENCE OF SPIN AND CHARGE FLUCTUATIONS ON THE HIGH-Tc SUPERCONDUCTIVITY

In the framework of the weak coupling theory of superconductivity, we have proved that spin and charge fluctuations in the high-T_c superconductors can pro-duce respectively, pair-breaking and pair-forming effects on the superconductivity resulting from the "generalized BCS mechanism". With the coupling constant for spin fluctuations larger than that for charge fluctuations, they combine to produce a temperature-dependent effective pair-breaking effect, which makes T_c decrease more rapidly than Δ(0), the superconducting gap at T=0, and therefore, enhances the ratio 2Δ(0)/T_c. This provides a reasonable physical interpretation for the relevant experimental results.     

FeSi/Si成份调制膜的二维磁性和死层效应

成功地制成了FeSi/Si非晶态成分调制膜,固定Si层厚度,系统改变FeSi层厚度d_m发现,随d_m下降,饱和磁化强度M_s单调减小,这主要是死层效应的贡献,OK下死层厚度约为5.8?,随d_m减小,调制膜逐渐由三维磁性转变为二维磁性,表现为出现低磁滞和无磁滞效应,线性的M_s(T)-T关系和Curie温度T_c的单调下降,T_c满足如下关系:△T_{c关键词：}     

EFFECTIVE POTENTIAL OF λφ41+3 AT ZERO AND FINITE TEMPERATURES

The effective potential of $\lambda$$\varphi$⁴₁₊₃ model with both signs of parameter m² is evaluated at T=0 by means of a simple but effective method for regularization and renormalization. Then at T≠0, the effective potential is evaluated in imaginary time Green function approach, using the Plana formula. A critical temperature for restoration of symmetry breaking in the standard model of particle physics is estimated to be T_c≌510 GeV.     

ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH

The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp³ s^* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε₂ (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε₂(ω) spectrum. The two components of the ε₂(ω) (i. e. ε_2xy(ω) and ε_2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.     

ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING,OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping ($\delta$= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.     

Top-Quark Condensate at Finite Temperature and Electroweak Symmetry Restoration

The gap equation at finite temperature in the top-quark condensate scheme of electroweak symmetry breaking is proven to have the identical form in both the imaginary and real time formalisms of thermal field theory. By means of the gap equation, combined with the basic relation to define the vacuum expectation value v of the effective Higgs field, we analyze the dependence on temperature T and chemical potential p of the dynamical top-quark mass as the order parameter characteristic of symmetry breaking, and obtain the p-T criticality curve for symmetry restoration. We find out that the critical temperature T_c = 2υ for μ = 0 and the critical chemical potential μ_c = 2 π υ / √3 for T = 0. When μ = 0, the top-quark mass near T_c has the leading (T_c² - T²)^1/2 behavior with an extra factor dependent on temperature T and the momentum cutoff Λ. However, it is generally argued that the symmetry restoration at T ≥ T_c is still a second-order phase transition.