多孔硅的光电化学特性研究

研究了多孔硅的光电化学特性和溶液中的光致电荷转移机一，由Ｐ型单晶硅制备的多孔硅具有Ｐ型半导体的光电性质，且光电流响应高于单晶硅，由于多孔硅表面态能级对光致电荷的陷阱作用，多孔硅呈现了独特的光电流响应和光致电荷转移性质。     

在弱碱性及中性介质中AISI304不锈钢载波钝化膜光电化学研究

采用光电化学方法－恒电位光电流测量技术研究了ＡＩＳＩ３０４不锈钢在０．１ｍｏｌ／ＬＮａ２Ｂ４Ｏ７及０．５ｍｏｌ／ＬＮａ２ＳＯ４介质中载波钝化膜，光电流测量结果表明，光电流大小与电极电势、成膜条件及测量介质有关，载波钝化膜基本上是高度无序的非晶态膜。     

Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

A mass spectrometric analysis of the positive ions and neutral products in a silane glow discharge has been performed. The active species, created by dissociation, disproportionation, and ion-molecule reactions are mainly SiH₂, SiH₃, and H. A calculation of the distribution of the SiH _n ⁺ ions shows that the silane concentration monitors the abundance of SiH ₃ ⁺ . The diffusional transport of radicals toward the discharge-tube walls can explain the observed deposition rates. The study of SiH₄-SiD₄ and SiH₄-D₂ plasmas emphasizes several reactions which modify the free-radical populations depending on the discharge conditions: disproportionation, termination, recombination, and abstraction. Heterogeneous reactions have also been observed: etching of the film by H atoms and direct incorporation of hydrogen in the growing film. A general scheme for the plasma deposition mechanism is proposed.     

锂离子电池用非晶硅薄膜负极材料的研究

采用磁控溅射法在铜箔集流体上沉积得到了厚度约2 μm的非晶硅薄膜。X-射线衍射(XRD)、高分辨率透射电镜(HRTEM)和选区电子衍射(SAED)分析表明，该薄膜为非晶态。扫描电镜(SEM)结果表明，该硅电极在电化学吸、放锂循环后体积膨胀率为300%，但电池依然保持良好的循环寿命。在1.5～0.005 V (vs Li⁺/Li)和0.1 mA·cm^-2条件下，该薄膜电极循环100 次后容量仍能保持在0.47 mAh·cm^-2以上，为初始容量的84%。每周容量衰减率仅为初周的0.16%。HRTEM和SAED结果表明，该薄膜在电化学吸、放锂循环后仍为非晶态，这可能是其具有良好电化学循环寿命的主要原因。     

掺硼p型非晶硅薄膜的制备及光学性能的表征

以高氢稀释的硅烷(SiH₄ )为反应气体,硼烷(B₂H₆)为掺杂气体,利用RF-PECVD方法,在玻璃衬底上制备出掺硼的氢化非晶硅(a-Si:H)薄膜,研究了硼掺杂量对氢化非晶硅(a-Si:H)薄膜的光学性能的影响.利用NKD-7000 W光学薄膜分析系统测试薄膜的透射谱和反射谱,并利用该系统的软件拟合得出薄膜的折射率、消光系数、吸收系数等光学性能参数,利用Tauc法计算掺硼的非晶硅薄膜的光学带隙.实验结果表明,随着硼掺杂量的增加,掺杂非晶硅薄膜样品在同一波长处的折射率先增大后减小,而且每一样品均随着入射光波长的增加而减小,在波长500 nm处的折射率均达到4.3以上;薄膜的消光系数和吸收系数随着硼掺杂量的增大而增大,在500 nm处的吸收系数可高达1.5×10⁵cm^-1.在实验的硼掺杂范围内,光学带隙从1.81 eV变化到1.71 eV.     

金属铝诱导法低温制备多晶硅薄膜

以氢气稀释的硅烷(SiH₄)和硼烷(B₂H₆)为气源,利用等离子体增强化学气相沉积法(PECVD)制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为poly-Si薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.     

Quantitative Photoelectrochemical Detection of Biotin Conjugated CdSe/ZnS Quantum Dots on the Avidin Immobilized ITO Electrodes

Photocurrent generation from CdSe/ZnS (core/shell) quantum dots (QDs) in a photoelectrochemical cell was proposed to perform a bioaffinity biosensor in this study. The photocurrent of QDs is reversible and methylene blue as an electron transfer mediator causes a four‐fold increase in the photocurrent. We further present quantitative photoelectrochemical detection of biotin conjugated QDs on the avidin immobilized ITO electrodes. A linear calibration graph was obtained in the range of 4 and 18 nM of biotin conjugated QDs with a coefficient of determination of 0.997. Results imply that QDs can be successfully used as photoelectroactive labels for the photoelectrochemical biosensor systems.     

Synthesis and Characterization of Nanostructured a-C:H (Hydrogenated Amorphous Carbon) Thin Films by Gaseous Thermionic Vacuum Arc (G-TVA) Deposition Technique

The aim of this contribution is to present the properties of the nanostructured hydrogenated carbon thin films and to study their growth carried out in a special deposition technique based on Thermionic Vacuum Arc method. The Gaseous Thermionic Vacuum Arc (G-TVA) technology is an original deposition method performed in a special configuration, consisting of a heated thermionic cathode which provides an electron beam on the anode. The surface free energy was evaluated by contact angle and their optical properties were studied by Filmetrics F20 spectrometry system. Structure of the film has been investigated by Raman spectroscopy as well as the mechanical properties like hardness, wear resistance, film-substrate adhesion. The films showed two distinct Raman characteristic peaks located at 1,350 cm⁻¹ (D-line) and 1,550 cm⁻¹ (G-line), broad for Si and very sharp for glass substrates. The G-TVA enables to prepare soft (hardness ~6 GPa) or hard (~24 GPa) films.     

二氧化钛纳米微粒膜光电化学行为的研究

利用不同的制备方法制备出二氧化钛纳米微粒膜，对二氧化钛纳米微粒膜的光电化学材为和产生的机理进行了研究．结果表明；二氧化钛纳米微粒膜除了具有传统半导体的光电化学性质外，还具有不同于传统半导体的光电化学性质这主要是出膜的微粒性引起的，可综合传统半导体和胶粒半导体两种模型来加以解释。     

衬底温度对用RF-PECVD法制备的非晶硅薄膜光学性能影响

采用射频等离子增强化学气相沉积(RF-PECVD)工艺制备非晶硅(a-Si:H)薄膜, KBr衬底在175-275 ℃范围内变化, 用傅立叶红外光谱仪(FTIR)测试KBr衬底上的薄膜红外光谱峰随衬底温度的变化情况, 结合红外光谱峰的理论分析确定薄膜中氢含量随衬底温度的变化规律. 光谱式椭圆偏振仪中用Forouhi Bloomer (FB)模型拟合得到薄膜的折射率(n), 消光系数(k), 膜厚及光学禁带宽度(Eg), 并用扫描电镜(SEM)断面分析对椭偏仪测试结果的准确性进行验证. 根据Tauc公式推出薄膜的Eg和截止波长, 并和FB模型得到的结果进行了比较, Eg(FB)和Eg(Tauc)的差值在0.015 eV内.     

氢化非晶硅薄膜的电场诱导锂离子注入及其光伏特性

采用电化学方法，在电场诱导下，对氢化非晶硅（ａ－Ｓｉ：Ｈ）薄膜进行锂离子注入，并用光电化学方法对不同条件下处理的ａ－Ｓｉ：Ｈ薄膜的光伏性质和注入机理进行了研究。结果表明，处理电位小于－０．６０Ｖ时，理离子注入明显，经过注入的薄膜光伏响应提高６０％左右．     

Bi2MoO6纳米薄膜的制备及其光电性能

采用非晶态配合物法在ITO导电玻璃上制备了Bi2MoO6薄膜. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、激光拉曼光谱(LRS)、紫外-可见漫反射谱(DRS)、光电流响应谱、光电转换量子效率(IPCE)等技术研究了Bi2MoO6薄膜的制备工艺、形貌、结构与薄膜光电性能的关系. 结果表明, 500 ℃、1 h焙烧后的Bi2MoO6薄膜为γ-Bi2MoO6晶相, 沿(131)晶面方向生长, 薄膜厚度约为69 nm. 随着焙烧温度的升高和焙烧时间的延长, Bi2MoO6薄膜的平均颗粒度增大, 并且在525 ℃焙烧出现β-Bi2MoO6和γ’-Bi2MoO6晶相. Bi2MoO6薄膜具有可见光响应活性, 在可见光照射下可以产生光电流, 优化条件下的Bi2MoO6薄膜在400 nm的光电转换量子效率可以达到2.14%. 薄膜的光电响应和光电转换量子效率受薄膜形貌及结晶状态影响, 可以通过控制薄膜的制备条件来提高薄膜的光电转换量子效率.     

电沉积二氧化钛纳米微粒膜的光电化学性能和表面形貌研究

采用光电流谱、透射光谱和扫描微探针显微镜技术对电沉积法制备的二氧化钛纳米微粒膜的光电化学性能和表面形貌进行了研究.结果表明,不同制备条件下的二氧化钛纳米微粒膜具有与紧密的半导体电极不同的光电化学性质,并探讨了其光电化学性能与表面形貌的关系.     

Influence of hydrocarbon gasses on PECVD a-C:H film deposition

Hydrogenated amorphous carbon layers (a-C:H) deposited at near room temperature by CH₄ and C₂H₂-Ar rf discharges have been studied. Discharge processes were investigated using growth kinetics and optical emission spectroscopy (OES). The role of plasma chemistry and of ion bombardment is discussed. Addition of argon, necessary to stabilize the C₂H₂ discharge, is found to enhance susbstantially gas phase processes such as dissociation, formation of atomic hydrogen and of CH, C₂, C₃ species (revealed by OES). It appears that rf plasma is very efficient for dissociation and ionization processes with threshold energies in the ten eV range. The layers' properties have been characterized by means of UV-Visible absorption, Fourier transform IR and Raman spectroscopies.     

Amorphous Silicon: New Insights into an Old Material

Amorphous silicon is synthesized by treating the tetrahalosilanes SiX₄ (X=Cl, F) with molten sodium in high boiling polar and non‐polar solvents such as diglyme or nonane to give a brown or a black solid showing different reactivities towards suitable reagents. With regards to their technical relevance, their stability towards oxygen, air, moisture, chlorine‐containing reaction partners RCl (R=H, Cl, Me) and alcohols is investigated. In particular, reactions with methanol are a versatile tool to deliver important products. Besides tetramethoxysilane formation, methanolysis of silicon releases hydrogen gas under ambient conditions and is thus suitable for a decentralized hydrogen production; competitive insertion into the MeO?H versus the Me?OH bond either yields H‐ and/or methyl‐substituted methoxy functional silanes. Moreover, compounds, such as Me_nSi(OMe)_4?n (n=0–3) are simply accessible in more than 75 % yield from thermolysis of, for example, tetramethoxysilane over molten sodium. Based on our systematic investigations we identified reaction conditions to produce the methoxysilanes Me_nSi(OMe)_4?n in excellent (n=0:100 %) to acceptable yields (n=1:51 %; n=2:27 %); the yield of HSi(OMe)₃ is about 85 %. Thus, the methoxysilanes formed might possibly open the door for future routes to silicon‐based products.     

Mesoporous Amorphous Silicon: A Simple Synthesis of a High‐Rate and Long‐Life Anode Material for Lithium‐Ion Batteries

Amorphous Si (a‐Si) shows potential advantages over crystalline Si (c‐Si) in lithium‐ion batteries, owing to its high lithiation potential and good tolerance to intrinsic strain/stress. Herein, porous a‐Si has been synthesized by a simple process, without the uses of dangerous or expensive reagents, sophisticated equipment, and strong acids that potential cause environment risks. These porous a‐Si particles exhibit excellent electrochemical performances, owing to their porous structure, amorphous nature, and surface modification. They deliver a capacity of 1025 mAh g^?1 at 3 A g^?1 after 700 cycles. Moreover, the reversible capacity after electrochemical activation, is quite stable throughout the cycling, resulting in a capacity retention about around 88 %. The direct comparison between a‐Si and c‐Si anodes clearly supports the advantages of a‐Si in lithium‐ion batteries.     

阳极氧化TiN薄膜制备N掺杂纳米TiO2薄膜及其可见光活性

室温下通过电泳沉积(EPD)的方法在Ti片表面制备TiN薄膜, 然后对TiN薄膜进行阳极氧化得到N掺杂多孔纳米结构的TiO2薄膜. 利用X射线衍射(XRD), X射线光电子能谱(XPS), 扫描电子显微镜(SEM)及光电化学方法对得到的薄膜进行表征. XRD测试结果表明, 经过阳极氧化并在350 ℃空气气氛中退火1 h的薄膜中存在锐钛矿晶型的TiO2. XPS的结果表明, 样品中的N元素取代部分O, 且N的摩尔分数为0.95%. SEM显示, 经阳极氧化后薄膜表面出现多孔纳米结构. 光电化学测试结果显示, 阳极氧化提高了N掺杂TiO2薄膜在可见光下的光电响应. 经阳极氧化并热处理的薄膜在0 V电位及可见光照射下光电流密度为2.325 μA·cm-2, 而单纯热处理的薄膜在相同条件下光电流密度仅为0.475 μA·cm-2. 阳极氧化得到纳米多孔结构提高了N掺杂纳米TiO2薄膜的表面积, 从而对可见光的响应增大.     

聚3-甲基噻吩修饰量子点硫化铅连接TiO2纳米结构膜的光电化学研究

采用原位化学法在纳米结构TiO2电极上制备了量子点PbS(Q-PbS), 并用电化学方法在TiO2/Q-PbS表面聚合3-甲基噻吩[poly(3-Methylthiophene), PMeT]. 研究结果表明, PMeT和Q-PbS单独修饰纳米结构TiO2电极和PMeT修饰Q-PbS连接纳米结构TiO2电极的光电流产生的起始波长都向长波方向移动; 在可见光区光电转换效率均比纳米结构TiO2的光电转换效率提高显著; PMeT与Q-PbS修饰的纳米结构TiO2之间存在p-n异质结. 在一定条件下p-n异质结的存在有利于光生电子/空穴的分离, 提高了光电转换效率.     

Degradation of Hydrogenated Nitrile-butadiene Rubber in Aqueous Solutions of H2S or HCl

The degradation of hydrogenated nitrile-butadiene rubber(HNBR) soaped in aqueous solutions of H₂S and HCl was investigated. The samples unexposed and exposed to different solutions were characterized by ¹³C nuclear magnetic resonance(¹³C NMR), X-ray photoelectron and infrared spectroscopies. In contrast to those of unexposed samples and samples soaped in HCl solution, the mechanical properties of samples exposed to H₂S solution significantly deteriorated, in which the new groups of C(=O)―NH₂, C―S―C and C=S emerged. The mechanism of C=S and C―S―C formation was speculated, except for that of the formation of group C(=O)―NH₂, which was widely discussed in acidic condition such as HCl solution. The formation of C―S―C was due to radical reaction initiated by mercapto radical and that of C=S was due to nucleophilic reaction initiated by mercapto cations. This finding is helpful to understanding the seal failure of HNBR in working environment containing H₂S.