Theory of zero bias anomalies due to paramagnetic impurities

The method developed by one of the authors is generalized to include paramagnetic impurities in order to explain zero bias tunneling anomalies. The self-energy of the electrons is supposed to be a local function in space; nonlocal or assisted tunneling effects are beyond the scope of the present theory. The tunneling current is expressed in terms of the local density of states at the barrier which in turn is given in terms of the life-time of the conduction electrons. The change of the local density of states depends on the positions of the impurities relative to the metal-oxide interface. This dependence is thoroughly investigated.     

金属玻璃的超声研究

本文综述脉冲超声实验在研究金属玻璃方面所取得的进展。将实验结果与描述非晶固体的双势阱和两能级隧道理论做比较,并讨论了金属玻璃中传导电子对两能级隧道系的弛豫作用,也介绍了最近Ngai提出的红外发散响应理论。     

Spin-resolved splitting of Kondo resonances in the presence of RKKY-type coupling

We have performed spin-resolved measurements on a Kondo impurity in the presence of RKKY-type exchange coupling. By placing manganese phthalocyanine (MnPc) molecules on Fe-supported Pb islands, a Kondo system is devised which is exchange coupled to a magnetic substrate via conduction electrons in Pb, inducing spin splitting of the Kondo resonance. The spin-polarized nature of the split Kondo resonance and a spin filter effect induced by spin-flip inelastic electron tunneling are revealed by spin-polarized scanning tunneling microscopy and spectroscopy.     

超薄栅氧化层n-MOSFET软击穿后的导电机制

研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管（n-MOSFET）软击穿 后的导电机制.发现在一定的栅电压V_g范围内，软击穿后的栅电流I_g符合Fowl er-Nordheim隧穿公式，但室温下隧穿势垒_b的平均值仅为0936eV，远小于S i/Si O₂界面的势垒高度315eV.研究表明，软击穿后，处于Si/SiO₂界 面量子化能级上的 电子不隧穿到氧化层的导带，而是隧穿到氧化层内的缺陷带上._b与缺陷带能 级和电 子所处的量子能级相关；高温下，激发态电子对隧穿电流贡献的增大导致_b逐 渐降低. 关键词： 软击穿 栅电流 类Fowler-Nordheim隧穿 超薄栅氧化层     

Kondo effect of single Co adatoms on Cu surfaces

The Kondo resonance of Co adatoms on the Cu(100) and Cu(111) surfaces has been studied by scanning tunneling spectroscopy. We demonstrate the scaling of the Kondo temperature T(K) with the host electron density at the magnetic impurity. The quantitative analysis of the tunneling spectra reveals that the Kondo resonance is dominated by the Cu bulk electrons. While at the Cu(100) surface both tunneling into the hybridized localized state and into the substrate conduction band contribute to the Kondo resonance, the latter channel is found to be dominant for Cu(111).     

Effect of localized charge states on the low-frequency part of the tunneling current spectrum (1/<Emphasis Type="Italic">f</Emphasis><Superscript><Emphasis Type="Italic">α</Emphasis></Superscript>)

The dependence of the low-frequency part of the tunneling current spectra (1/f ^α ) above a clean surface and above isolated impurity atoms on the InAs(110) cleaved surface has been investigated by scanning tunneling microscopy/spectroscopy in high vacuum. A theoretical model is proposed to explain the experimental results, which takes into account the many-body interaction of conduction electrons (with suddenly switched on and off Coulomb interaction on an impurity atom and on the scanning tunneling microscope tip) with the continuous-spectrum states in the tunneling contact leads.     

Resonance fluorescence in transport through quantum dots: noise properties

We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field, and develop a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation (by phononic emission) events as well as their correlation. We find that the quantum noise of both the transmitted electrons and the emitted phonons can be controlled by the manipulation of external parameters such as the driving field intensity or the bias voltage.     

Transient tunneling spectroscopy (TTS) study of electron tunneling from phosphorus atoms in silicon

Recently developed method of transient tunneling spectroscopy (TTS) is applied to investigate the tunneling dynamics of electrons from phosphorus atoms to the silicon conduction band. In contrast to the conventional constant-current spectroscopic tunneling techniques, in TTS one monitors the evolution of the tunneling process in time. Various difficulties, which may be encountered in the measurements of the tunneling time by TTS, are discussed and illustrated. The temperature dependence of the tunneling time for an isolated phosphorus atom is presented, and possible mechanisms responsible for the decrease of the tunneling time with the lattice temperature T, at T15 K, are discussed.     

Spin-polarized tunneling through a thin-film

The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated with the use of the s–f model. Electron-spin polarization is evaluated in the tunnel current which comes from the different densities of spin-up, spin-down conduction electrons at the Fermi level in a ferromagnetic semiconductor (EuS). Calculated results are compared with some tunneling experiments.     

Indication of the presence of acceptor states around the Fermi level of amorphous silicon

A junction was grown by sputtering of silicon on a single crystal of high resistivity n-type silicon. The reverese bias V-I characteristics followed Fowler-Nerdheim model with a sudden change in the slope at 0.4 volt indicating an increase in the barrier height. This is attributed to tunneling of extra electrons from the bottom of the conduction band of the substrate to the acceptor traps that face each ether at this bias.     

恒定电场下双磁垒结构中的电子输运行为

对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明,在相当宽广的非共振电子入射能区,外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构,共振减弱;对于电子隧穿不同磁垒磁阱构成的双磁垒结构,无电场作用时的非完全共振在适当的偏置电压下转化为完全共振,这时的电子可实现理想的共振隧穿.研究同时表明,磁量子结构中存在着显著的量子尺寸效应和负微分电导.     

Tuning of tunneling current noise spectra singularities by localized states charging

We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching “on” and “off” of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum (1/f ^α) and also results on high frequency component of tunneling current spectra (singular peaks appear). The article is published in the original.     

Superconductivity at disordered interfaces

The increase of the superconducting transition temperature T_c due to the tunneling of conduction electrons into negative-U centers at a disordered metal-semiconductor interface is calculated. The strong dependence of the experimental increase of T_c on the Fermi energy of the metal is accounted for by the polaronic reduction of the tunneling matrix elements. The latter reduction is dynamically suppressed by the decreasing lifetime of the localized state as E_F increases. The theoretical enhancement is sufficiently strong to explain the increase of T_c observed in eutectic alloys.     

Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula

Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

Electroluminescence and internal screening of domains upon polarization switching of ferroelectric ceramics in a pulsed self-consistent field

This paper reports on the results of investigations into the electroluminescence induced by polarization switching of a ferroelectric ceramic material in an electric field with a rapidly increasing strength. A correlation between the polarization switching and luminescence kinetics is revealed. It is demonstrated that tunneling of electrons to the conduction band and impact ionization in field concentrators are the main mechanisms of generation of free charge carriers responsible for the electroluminescence and internal screening of switching domains.     

Quantum diffusion of muon and muonium in solids

The quantum tunneling diffusion of muon and muonium in crystalline solids is discussed with emphasis on the effects of disorder and superconductivity. The complex effect of disorder on muonium diffusion in inhomogeneous crystals is scrutinized. The enhanced muon diffusion in the superconducting state of high-purity tantalum establishes the predominant influence of conduction electrons on the quantum diffusion in metals.     

Donor and acceptor-like electronic states in a one-dimensional semiconductor

Donor and acceptor-like electronic states were observed near the conduction and valence band, respectively, in a semiconducting single-wall carbon nanotube using scanning tunneling microscopy and spectroscopy. They are observed to be, spatially, at the same location and spread within a few nm. Their physical origin is suggested as locally formed excessive and deficient number of electrons per a closed carbon network.     

Photoelectric spectroscopy of oxide states with MOS structures atT=79 K

AtT=79 K illumination effects with visible and UV light on the drain current were studied forn-channel enhancement-type MOS transistors. The results show that the response of photoelectric measurements is due to electron excitation from oxide states into the silicon surface layer (positive changes of drain current). The oxide states lying near the bottom of the silicon dioxide conduction band are distributed in energy. Oxide states having captured a hole can be discharged by electrons excited from the silicon conduction or valence band (negative changes of drain current) in combination with a tunneling process.