具有生物活性钼钨仿生配合物与ATP作用的NMR研究

在常温下合成了以邻苯二酚为配体,分别以乙二胺、1,2-丙二胺、1,3-丙二胺为抗衡离子的7种手性钼钨八面体配合物(NH2CH2CH2NH3)3[Mo(V)O2(OC6H4O)2](1),(NH2CH2CH2NH3)2[W(VI)O2(OC6H4O)2](2),(NH2CH2CH2NH3)2.5[Mo(V)0.5W(VI)0.5O2(O2C6H4)]2](3),(NH3CH2CHNH2CH3)3[Mo(V)O2(OC6H4O)2](4),(NH3CH2CHNH2CH3)2[W(VI)O2(OC6H4O)2](5),(NH3CH2CHNH2CH3)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](6),(NH3CH2CH2CH3NH2)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](7),并在生理条件下对其与ATP的相互作用进行了液体NMR研究,发现标题配合物的中心金属离子在纯D2O溶剂中大多数以+5价形式存在,W(VI)被还原为W(V),但与ATP混合后又转化为+6价,配合物原有的顺磁性特征完全消失.研究还发现ATP可以促进中心离子与原配体发生解离.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.     

Electrical transport and superconductivity in the Al2O3-Bi2Sr1.8Ca1.2Cu2Oy and MgO-Bi2Sr1.8Ca1.2Cu2Oy composites

We have measured the resistivities of Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites with the nominal Bi₂Sr_1.8Ca_1.2Cu₂O_y volume fraction, ₂₂₁₂, ranging from 0.15 to 1.00. For the Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu ₂O_y composites, we find for the samples with ₂₂₁₂≥0.6 that the superconducting transition temperature, T_c, is not disturbed by the addition of Al₂O₃. For ₂₂₁₂<0.3, no zero-resistivity state is observed. For the MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites, T_c is barely disturbed for the samples with ρ₂₂₁₂≥0.7. No superconducting state is observed for the samples with ρ₂₂₁₂<0.35. The variation of (300 K) with ρ₂₂₁₂ indicates a three-dimensional percolating Bi-Sr-Ca-Cu-O matrix occurring at ρ₂₂₁₂≈0.19 and ≈0.15 in Al₂O₃-Bi₂Sr_1.8Ca_1.2 Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y, respectively. Both resistivity and magnetization measurements suggest that the reactions of Bi₂Sr_1.8Ca_1.2Cu₂O_y with MgO are weaker than with Al₂O₃.     

Pressure-Dependent Base-Wavefunction Admixture and Lifetime of R1 State of La3Lu2Ga3O12:Cr3+

As a key factor leading to the pressure-dependent R₁-line-shift reversal and R₁-state lifetime, at 10 K, the pressure-dependent variation of mixing-degree of |t₂²(³T₁)e⁴T₂〉 and |t₂³² E〉base-wavefunctions in the wavefunction of R₁ state of LLGG:Cr³⁺ has been calculated and analyzed. From this, the physical origin of the pressure-dependent R₁-line-shift reversal has been revealed. Furthermore, by using the pressure-dependent values of the sum of all square mixing-coefficients of |t₂²(³T₁)e⁴T₂〉in the wavefunction of R₁ state, the lifetimes of R₁ state of LLGG:Cr³⁺ at various pressures have been calculated, which are in good agreement with observed results. The quantum anticrossing effect between t₂³²E and t₂²(³T₁)e⁴T₂ levels due to both spin-orbital interaction and electron-phonon interaction is remarkable, which is related to the admixture of |t₂²(³T₁)e⁴T₂〉and |t₂³² E〉as well as the low-high crystal-field transition.     

Ba10(PO4)4(SiO4)2∶Eu2+荧光体的光谱特性

采用高温固相法合成了荧光体Ba₁₀（PO₄）₄（SiO₄）₂：Ce³⁺和Ba₁₀（PO₄）₄（SiO₄）₂：Eu²⁺,研究了两种荧光体的光谱特性。结果表明,两者都呈现较强的宽带激发特征。根据同种基质中Eu²⁺和Ce³⁺两种离子光谱特征的相关性,通过测得的Ba₁₀（PO₄）₂（SiO₄）₂基质中Ce³⁺的光谱数据估算了Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺中Eu²⁺的斯托克斯位移（ΔS）和激发能量,估算结果与Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺样品的光谱分析结果十分吻合。Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺可以同时被紫光和蓝光激发,发出偏白的绿光,可用作白光LED的荧光粉。     

CaMoO4：Eu3+,Bi3+,Li+红色荧光粉的共沉淀制备与表征

采用共沉淀法合成了红色荧光粉Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺及Ca_0.5MoO₄：Eu_0.25-2x³⁺, Bi_x³⁺,Li_0.25+x⁺,并采用X射线衍射(XRD)、拉曼光谱,扫描电镜(SEM)和荧光光谱(PL)测定分析了其结构形貌特征及发光性能。结果表明：制备的CaMoO₄：Eu³⁺,Bi³⁺,Li⁺红色荧光粉为白钨矿结构,颗粒尺寸约为0.5~1 μm。掺杂Bi³⁺的Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺的相对发光强度明显高于未掺Bi³⁺的Ca_0.75MoO₄：Eu_0.25³⁺荧光粉。Bi³⁺离子的掺杂将吸收来的能量传递给激活离子Eu³⁺,起到了能量传递的作用。当Bi³⁺掺杂量为x=0.005时,在395 nm激发下,主发射峰在616 nm处的相对发光强度最大,但掺杂浓度过高时会出现浓度猝灭现象。另外,电荷补偿剂的掺入能够解决材料中因同晶取代引起的电荷不平衡的问题,以Li⁺作电荷补偿剂、Eu³⁺和 Bi³⁺共掺合成的Ca_0.5MoO₄：Eu³⁺_0.23,Bi_0.01³⁺,Li⁺_0.26红色荧光粉的发光性能强于Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.5MoO₄：Eu_0.25³⁺, Li_0.25⁺及Ca_0.75MoO₄：Eu_0.24³⁺,Bi_0.01³⁺。     

关于93Mo中21/2+晕阱的来源(英文)

本研究通过壳模型计算研究了N=51的同中子素91Zr、93Mo和95Ru中高自旋晕态21/2+的同核异能态现象。计算发现,低角动量的p_1/2轨道上的质子是仅在93Mo中存在21/2+晕阱的主要原因。同时,本工作还研究了N=52的同中子素92Zr、94Mo和96Ru中10₁+-12₁+能级结构的系统性,发现94Mo中的10₁+-12₁+能级间隙相对最小,考虑到与93Mo的17/2₁+-21/2₁+能级相似的组态,这一结果为93Mo中出现21/2+晕阱提供了补充性的论证。Isomerism of the high-spin yrast 21/2+ states of the N=51 isotones 91Zr, 93Mo and 95Ru has been investigated using the shell model calculations. It is found that the low-j πp_1/2 is responsible for the only yrast trap in 93Mo. In addition, the relatively smaller 10₁+-12₁+ level spacing in 94Mo has been found by investigating the systematics of the 10₁+-12₁+ level structures in the N=52 isotones 92Zr, 94Mo and 96Ru. This result provides a supplementary argument to the origin of the 21/2+ yrast trap in 93Mo from the viewpoint of the similarity between the configurations of 10₁+-12₁+ states in 94Mo and those of 17/2₁+-21/2₁+ states in 93Mo.     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

Energy Spectrum,g Factors,Strain-Induced Level-Splittingsand R-Line Thermal Shift of MgO:V2+

Traditional ligand-field theory has to be improved by taking into account both pure electronic contribution and electron-phonon interaction one (including lattice-vibrational relaxation energy). By means of improved ligand-field theory, the R line, t₂^{3 2}T₁ and t₂^{3 2}T₂ lines, t₂² (³T₁)e⁴T₂, t₂² (³T₁)e⁴T₁ and t₂ e²(⁴A₂)⁴T₁ bands, g factors of t₂^{3 4}A₂ and t₂^{3 2}E, four strain-induced level-splittings and R-line thermal shift of MgO:V₂₊ have been calculated. The results are in very good agreement with the experimental data. It is found that for MgO:V₂₊, the contributions due to electron-phonon interaction (EPI) come from the first-order term; the contributions from the second-order and higher terms are insignificant. In thermal shift of R line of MgO:V₂₊, the temperature-dependent contribution due to EPI is dominant. The results obtained in this work may be used in theoretical calculations of other effects of EPI.     

Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S多层纳米线中s-d交换作用的研究

以氧化铝纳米孔为模板,采用直流电化学沉积的方法制备了Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S量子阱纳米线阵列,并系统研究了该纳米线阵列在不同温度和不同磁场下的电学输运特性.随着外磁场的变化,样品表现出共振传输特性.通过量子阱理论对实验现象进行了分析,直接得到了稀磁层Cd_(0.97)Mn_(0.03)S中s-d交换作用常数N_0α的定量结果.研究发现该交换作用常数随温度具有e~(-1/T)的变化趋势.     

Steady state and transient fluorescence studies of CaF2: Dy single crystals

The steady state and transient fluorescence spectra of CaF₂: Dy³⁺ have been studied using Ar⁺ and N₂ lasers in the temperature range 77–673 K and in the wavelength region 4500–9000 Å. The spectra show the presence of two types of centers (type A and type B) with decay times of 1.3 and 3.5 ms. The observed spectrum is mostly due to type A centers. Three new groups of fluorescence ⁴F_9/2−⁶H_11/2, ⁴F_9/2−(⁶H_9/2, ⁶F_11/2) and ⁴F_9/2−(⁶H_7/2, ⁶F_9/2) have been observed for type A centers, and a tentative assignment of the positions of the Stark levels of ⁶H_11/2, (⁶H_9/2, ⁶F_11/2) and (⁶H_7/2, ⁶F_9/2) has been made. The change in the intensity of the transitions with temperature and excitation wavelength are discussed.     

Mn2+离子掺杂的NaTaOGeO4:Tb3+的发光性能

采用高温固相法制备了颜色可调的NaTaOGeO₄∶Tb³⁺,Mn²⁺荧光粉,并研究了其发光特性以及能量传递机理。在244 nm激发下,NaTaOGeO₄∶Tb³⁺的发射光谱的发射峰分别位于380,413,436,492,544 nm,分别属于Tb³⁺的⁵D₃→⁷F_J和⁵D₄→⁷F_J（J=6,5,4）能级跃迁,为蓝光和绿光发射。在280 nm波长激发下,在492 nm和544 nm处有较强的发射峰,分别属于Tb³⁺的⁵D₄→⁷F₆、⁵D₄→⁷F₅能级跃迁,为绿光发射。在248 nm波长激发下,NaTaOGeO₄∶Mn²⁺的发射光谱由位于576 nm处的宽带组成,属于Mn²⁺的⁴T₁→⁶A₁能级跃迁。当在NaTaOGeO₄∶Tb³⁺荧光粉中共掺杂Mn²⁺时,可以同时观察到Mn²⁺和Tb³⁺的发射峰,通过改变浓度掺杂比,可以得到颜色可调控的荧光粉。     

Mechanical anisotropy and electronic properties of X2N2 (XH2 ): first-principles calculations*

The mechanical anisotropy, structural properties, electronic band structures and thermal properties of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are detailed and investigated in this work. The novel silicon nitride phase Si₂ N₂ (SiH₂ ) and germanium nitride phase Ge₂ N₂ (GeH₂ ) in the Cmc 2₁ structure are proposed in this work. The novel proposed Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are both mechanically and dynamically stable. The electronic band calculation of the HSE06 hybrid functional shows that C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are all wide band gap semiconductor materials, and C₂ N₂ (CH₂ ) and Si₂ N₂ (SiH₂ ) are direct band gap semiconductor materials, while Ge₂ N₂ (GeH₂ ) is a quasi-direct band gap semiconductor material, the band gap of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are 5.634 eV, 3.013 eV, and 2.377 eV, respectively. The three-dimensional and plane distributions of Young’s modulus, shear modulus and Poisson’s ratio of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) show that these materials have different degrees of mechanical anisotropy. The order of Young’s modulus of Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) in different directions is different from that of C₂ N₂ (CH₂ ). When the tensile axis is in a particular direction, the order of the Young’s modulus of Si₂ N₂ (SiH₂ ): E _[110] <E _[120] <E _[111] <E _[101] <E _[010] =E _[100] <E _[011] <E _[001], and the order of the Young’s modulus of Ge₂ N₂ (GeH₂ ): E _[110] <E _[111] <E _[101] <E _[120] <E _[100] <E _[010] <E _[011] <E _[001] .     

Structural evolution study of additions of Sb_2S_3 and CdS into GeS_2 chalcogenide glass by Raman spectroscopy

The structures of pseudo-binary GeS_2–Sb_2S_3, GeS_2–CdS, Sb_2S_3–CdS, and pseudo-ternary GeS_2–Sb_2S_3–CdS chalcogenide systems are systematically investigated by Raman spectroscopy. It is shown that a small number of [S_3Ge–GeS_3]structural units(SUs) and-S-S-/S8 groups exist simultaneously in GeS_2 glass which has a three-dimensional continuous network backbone consisting of cross-linked corner-sharing and edge-sharing [GeS_4] tetrahedra. When Sb_2S_3 is added into GeS_2 glass, the network backbone becomes interconnected [GeS_4] tetrahedra and [SbS_3] pyramids. Moreover, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from Sb_2S_3, leading to the formation of [S_2Sb–SbS_2] SUs. When CdS is added into GeS_2 glass, [Cd_4GeS_6] polyhedra are formed, resulting in a strong crystallization tendency. In addition, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from CdS, resulting in the dissolution of Ge–Ge bond. Co-melting of Sb_2S_3 or CdS with GeS_2 reduces the viscosity of the melt and improves the homogeneity of the glass. The GeS_2 glass can only dissolve up to 10-mol% CdS without crystallization. In comparison, GeS_2–Sb_2S_3 glasses can dissolve up to 20-mol% CdS,implying that Sb_2S_3 could delay the construction of [Cd_4GeS_6] polyhedron and increase the dissolving amount of CdS in the glass.     

Phase formation and magnetic properties of Nd2Fe14B-type Nd16Co76B8−xCx alloys and their hydrides

An attempt is made to synthesize Nd₂Co₁₄C compound by mechanical alloying Nd₁₆Co₇₆B_8−xC_x (0x8) alloys and subsequent annealing. Phase formation and magnetic properties of Nd₂Fe₁₄B-type Nd₁₆Co₇₆B_8−xC_x alloys and their hydrides are investigated. The Nd₂Co₁₄(B,C) phase with Nd₂Fe₁₄B-type structure is formed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys, while NdCo₇C_δ phase with TbCu₇-type structure is observed in Nd₁₆Co₇₆C₈ alloy. The lattice parameter c of the Nd₂Co₁₄(B,C) phase decreases with increasing the carbon content. A limit volume of the unit cell to form the Nd₂Fe₁₄B-type structure is estimated to be 0.870 nm³. The spin-reorientation temperature T_SR increases with increasing the carbon content, due to an enhancement of magnetocrystalline anisotropy caused by carbon substitution for boron. After hydrogenation, the lattice expansion is observed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys. The spin-reorientation temperature of Nd₁₆Co₇₆B_8−xC_xH_y (0x7) is much lower than that of the host alloys. Some structural and magnetic properties of hypothetic Nd₂Co₁₄C and Nd₂Co₁₄CH_y compounds are estimated by extrapolation.     

电极过程自由基中间体的ESR研究——取代苯基重氮盐的电解还原

本文用自由基捕捉剂苯亚甲基叔丁基氮氧化物(PBN)与ESR相结合的方法研究了十种取代苯基重氮盐RC₆H₄N₂⁺BF₄^-(R=F,Cl,Br,NO₂,OCH₃及CH₃)在乙腈中电解还原产生的活泼自由基。结果表明:1.RC₆H₄N₂⁺BF₄^-电解还原时产生RC₆H₄自由基,并能被捕捉剂PBN所捕捉,以形成稳定的自由基加合物[RC₆H₄-PBN]^·。2.由[RC₆H₄-PBN]^·ESR谱的超精细裂分常数算出的二面角θ_β值大小与处于不同位置的给定取代基R的关系为:θ_β(O-R) < θ_β(m-R) < θ_β(P-R)     

Sr3B2O6：Eu3+,Li+荧光粉的合成与发光性能

采用高温固相法合成Sr₃B₂O₆：Eu³⁺,Li⁺红色荧光粉,考察了激活剂Eu³⁺和电荷补偿剂Li⁺浓度对Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发光性能的影响。结果表明：适量掺杂Eu³⁺、Li⁺离子并不改变Sr₃B₂O₆的结构。当Eu³⁺掺杂量为4%、Li⁺的掺杂量为8%时,在900 ℃下灼烧2 h可以得到发光性能最佳的Sr_2.9B₂O₆：0.04Eu³⁺,0.08Li⁺红色荧光粉。以394 nm的近紫外光激发时,Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发射出红光,对应于Eu³⁺的4f-4f 跃迁,其中以614 nm附近的⁵D₀→⁷F₂跃迁发光最强,是一种有潜力用于白光LED的红色荧光粉。     

Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

Oxyanion derivatives of cuprate superconductors superconducting 123 phosphates

While YSr₂Cu₃O₇ cannot be prepared under ambient conditions, partial substitution of the phosphate group for copper, as in YSr₂Cu_2.8(PO₄)_0.2O_y, stabilizes this phase in the orthorhombic structure, but the material is not superconducting. Superconductivity in YSr₂Cu_2.8(PO₄)_0.2O_y is obtained by increasing the hole concentration through partial substitution of Y by Ca, as in Y_0.7Ca_0.3Sr₂Cu_2.8(PO₄)_0.2O_y (T_c≈40 K). By incorporating the phosphate group in orthorhombic YBaSrCu₃O ₇, a stable tetragonal derivative of the formula YBaSrCu_2.8(PO₄)_0.2O_y (T_c≈ 47 K) has been prepared; the T_c increases to 70 K by partial substitution of Y by Ca as in Y_0.7Ca_0.3BaSrCu_2.8(PO₄)_0.2O_y.     

新型红色荧光粉Na2Ca4(PO4)2SiO4:Eu3+,Bi3+的制备及发光特性

用高温固相法合成了用于白光LED的Na2Ca4(1-x-y)(PO4)2SiO4:xEu3+,yBi3+红色荧光粉.研究了助熔剂H3BO3、二次煅烧时间和稀土掺杂量等制备条件对样品发光性质的影响.结果表明,在1 200℃、助熔剂H3BO3加入量为样品质量的3.8%时可得到更有利于发光的α-NCPS基质,而且掺入Eu3+...