重离子束注入与生物体的相互作用及遗传诱变的分子机制

低能重离子与生物体系相互作用及其生物诱变效应的应用研究在我国率先兴起， 并在应用中取得了很大的成就。 介绍了重离子注入与生物有机体的相互作用及其主要的生物学效应， 包括细胞染色体水平、 生理生化效应， 以及对DNA损伤修复、 基因表达、 甲基化修饰的影响。 总结了离子注入诱变的分子遗传学机理的相关研究。 同时分析、 比较讨论了高能与低能离子、 离子束与射线的生物学效应的异同。 提出了离子注入今后的研究方向， 特别指出了离子注入对生物基因表达影响研究的重要性。 As a new mutagenesis technique, low energy heavy ion implantation started in China for the study of interaction effect between incident ions and organism, and great achievements have been obtained in crop breeding. The article reviewed the main biological effects induced by heavy ion implantation, including physiology, biochemistry and genetics effects, on levels of cell and chromosome, gene expression, DNA methylation, DNA damage and reparation etc. It compared the differences in mutagenesis for organism by high energy and low energy ion implantation, as well as γ ray radiaiton. Future investigation topics were proposed, the emphasis of researches in future was pointed out, i.e., the molecular mechanism and effects of gene differential expression of organism treated by ion implantation.     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.     

低能离子诱导拟南芥基因组不稳定性的研究

体细胞同源重组产生的DNA重排、 缺失和复制等是基因组不稳定的重要指标, 以拟南芥菜GUS基因重组报告系R2L100和R3L66为实验材料, 以体细胞同源重组频率（每个植株上的GUS斑点数目）作为评估标准, 研究低能Ar+离子和α粒子辐射对植物基因组稳定性的影响。 结果表明: 30 keV的Ar+离子辐照拟南芥干种子, 在500×1013—3 000×1013 ions/cm2剂量范围内, 同源重组频率与对照相比明显升高, 最大值是对照的2.4倍; 3.3 MeV的α粒子辐照萌发4 d后的幼苗, 同源重组频率随着剂量的增加呈先增后降的变化趋势, 最大值是对照的1.9倍, 对应的辐照剂量是10 Gy。 以上实验结果表明, 低穿透能力的辐射能有效增加植物基因组的不稳定性。 α粒子辐照拟南芥菜幼苗的根, 未受到辐照的地上部分的同源重组频率较对照增加2.5倍, 表明低能离子诱导的基因组不稳定信号在植物个体水平是可以长程输运的。 以上结果从另一个侧面解释了低能离子的诱变机制。 The somatic homologous recombination was frequently used to evaluate genome stability because it can result in DNA changes, such as rearrangement, deletion and duplication. In this paper, we used Arabidopsis thaliana transgenic for GUS recombination substrate (R2L100 and R3L66) to study the genomic instability induced by low energy ion and α particle characteristic of short penetrating properties. The dry seeds of R3L66 line were irradiated by 30 keV Argon ion, the Homologous Recombination Frequency (HRF) had a significant increase at dose range of 500×1013—3 000×1013 ions/cm2. The highest level of HRF was 2.42 fold over the control. The 3.3 MeV α particles were used to radiate 4 day old seedlings of R2L100 line. The HRFs had a dose dependent increase at dose of 1—10 Gy, and a dose dependent decrease at 10—100 Gy. The highest level of HRF induced by α particle was 1.9 fold over control at the dose of 10 Gy. These results indicate that short penetrating irradiation can effectively trigger the plant genomic instability at the level of plant. The local irradiation on the roots of R2L100 by α particle resulted in a 2.5 fold increase of HRF in non irradiated aerial plant,which indicates that a signal of genomic instability generated by α particle radiation can systemically travel in whole plant. It is possible that the genome instability induced by low energy ion is a major part of its mutagenic mechanism.     

Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it in-situ} and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.     

低能重离子剂量-存活率效应及其拟合模型探讨

低能重离子注入生物体是20世纪80年代中期发展起来的一种诱变手段, 在诱变育种和放射医学等领域有巨大的应用前景。 物理辐照的剂量与存活率之间的关系是辐射生物学效应的最重要的关系之一, 低能离子与生物体相互作用的剂量 存活率曲线表现为特殊的马鞍型。 介绍了低能重离子的马鞍型剂量 存活率效应及其数学模型, 并探讨了模型拟合中存在的一些问题。 Low energy heavy ion implantation is an organism mutation method developed in middle of 1980s, which has a potential application in breeding and radiation therapy. The dose survival curve is a characteristic effect in radiobiology. Implanted with low energy heavy ions, organisms could manifest a Saddle like dose survival curve. In this article, the Saddle like dose survival effect and its modeling has been described, and several topics in model simulation are discussed.     

Evidence of New Structure Formation in C-doped SiO2 after 4.57 MeV／u Pb Ion Irradiation

Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations induced     

Centrality and energy dependence of rapidity correlation patterns in relativistic heavy ion collisions

The centrality and energy dependence of rapidity correlation patterns are studied in Au+Au collisions by using AMPT with string melting, RQMD and UrQMD models. The behaviors of the short-range correlation (SRC) and the long-range correlation (LRC) are presented clearly by two spatial-position dependent correlation patterns. For centrality dependence, UrQMD and RQMD give similar results as those in AMPT, i.e., in most central collisions, the correlation structure is flatter and the correlation range is larger, which indicates a long range rapidity correlation. A long range rapidity correlation showing up in RQMD and UrQMD implies that parton interaction is not the only source of long range rapidity correlations. For energy dependence, AMPT with string melting and RQMD show quite different results. The correlation patterns in RQMD at low collision energies and those in AMPT at high collision energies have similar structures, i.e. a convex curve, while the correlation patterns in RQMD at high collision energies and those in AMPT at low collision energies show flat structures, having no position dependence. Long range rapidity correlation presents itself at high energy and disappears at low energy in RQMD, which also indicates that long range rapidity correlations may come from some trivial effects, rather than the parton interactions.     

Incident particle range dependence of radiation damage in a power bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistors(BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon(C),40-MeV silicon(Si),and 40-MeV chlorine(Cl) ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation((1/β)) of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The(1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.     

重离子束辐照育种研究进展及发展趋势

相对于低能离子束生物学, 中能重离子束对植物的诱变效应介绍较少。 从机理上综述了中能重离子束辐照诱变技术的优点, 简要介绍了粮食作物、 经济作物及模式植物的重离子束辐照育种的现状, 最后从转基因、 分子辅助标记及航天育种等方面对重离子束辐照育种的发展趋势进行了展望。 In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented.     

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

The influences of total ionizing dose(TID) on the single event effect(SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset(SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate(FG) cells after heavy ion irradiation are observed.Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer(LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling(mTAT) path across the tunnel oxide.     

Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation

Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas(2 DEG)in Ga N-based HEMTs.Coupled Schr¨odinger’s and Poisson’s equations are solved to calculate the band structure and the concentration of 2 DEG by the self-consistency method,in which the vacancies caused by proton irradiation are taken into account.Proton irradiation simulation for Ga N-based HEMT is carried out using the stopping and range of ions in matter(SRIM)simulation software,after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2 DEG.Irradiated by protons with high fluence and low energy,a large number of Ga vacancies appear inside the device.The results indicate that the ionized Ga vacancies in the Ga N cap layer and the Al Ga N layer will affect the Fermi level,while the Ga vacancies in the Ga N layer will trap the two-dimensional electrons in the potential well.Proton irradiation significantly reduced the concentration of 2 DEG by the combined effect of these two mechanisms.     

Analysis of the Interaction between Low-Frequency Waves and Ions in the High-Altitude Cusp Region Observed by Satellite Cluster

The energy transfer between ions （protons） and low frequency waves （LFWs） in the frequency range f1 from 0.3 to 10 Hz is observed by Cluster crossing the high-altitude polar cusp. The energy transfer between low frequency waves and ions has two means. One is that the energy is transferred from low frequency waves to ions and ions energy increases, The other is that the energy is transferred from ions to low frequency waves and the ion energy decreases. lon gyratory motion plays an important role in the energy transfer processes. The electromagnetic field of f1 LFWs can accelerate or decelerate protons along the direction of ambient magnetic field and warm or refrigerate protons in the parallel and perpendicular directions of ambient magnetic field, The peak values of proton number densities have the corresponding peak values of electromagnetic energy of low-frequency waves. This implies that the kinetic Alfven waves and solitary kinetic Alfven waves possibly exist in the high-altitude cusp region.     

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

Total ionizing dose effect induced low frequency degradations in 130 nm partially depleted silicon-on-insulator(SOI) technology are studied by ~(60) Co γ-ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect(LKE) at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body.It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10~(18)eV~(-1)cm~(-3) to 3.59×10~(18)eV~(-1)cm~(-3) after irradiation.     

Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.     

低能离子注入育种中次级效应影响的模拟研究

低能离子注入育种作为一种有效的育种方法在实践中进行了大量的尝试并取得了一系列重要成果,但其作用机理一直都存在着巨大的争议,特别是射程很短的低能重离子如何穿透到种子内部触发生物效应。本研究利用SRIM、CASINO、Geant4模拟程序对低能离子注入生物样品的离子注入深度进行模拟和定量分析,并对次级粒子可能产生的影响进行了定量模拟研究。结果显示,低能重离子本身射程一般都小于1 μm,选用轻离子、提高注入能量、采用干种子进行注入,都有利于增加穿透深度。次级过程中,反冲质子的最大射程比初级入射离子的稍大,不能显著提升穿透能力。次级过程产生的粒子中只有X射线可以明显提高穿透种子的深度,只要剂量足够大,总会有少量X射线穿透到很深的地方。The breeding method by low-energy ion implantation has been proved to be a valuable breeding method by a large number of practical attempts, but the mechanism of the method has always been in a large dispute. The most difficult thing to be understood is how the low energy heavy ion with such a short range (normally shorter than 1 μm) can penetrate into the inner part of seeds to trigger the biological effects. In this paper, simulations with quantitative analysis were performed for the low energy ion implantating into biological samples and the effects caused by the secondary particles using SRIM, CASINO and Geant4 simulation programs. The results showed that the ranges of low energy heavy ions are normally less than 1 μm. The ranges can become longer if dry seeds and light ions are used with a higher energy. The ranges of recoil protons are only a little longer than that of the primary ions. Among the secondary particles produced in the ion implanting process, only the X-ray can obviously increase the penetration depth in seeds. There always will be a small amount of X-rays which can penetrate into the deeper place in the seed if the ion dose is high enough.     

Ionoluminescence Spectra of a ZnO Single Crystal Irradiated with 2.5 MeV H~+ Ions

The ionoluminescenee(IL) spectra of a ZnO single crystal irradiated with 2.5 MeVH~+ ions reveal that its intensity decreases with increasing the ion fluence, which indicates that the concentration of lumineseence centers decreases with irradiation. The Gaussian decomposition results of the ZnO IL spectrum with a fluence of1.77×10~(11) ions/cm~2 show that the spectrum is a superposition of energy levels centered at 1.75 eV, 2.10 eV, 3.12 eV and 3.20 eV. The four peaks are associated with electronic transitions from CB to V_(Zn), CB to O_i,Zn_i to VB and the decay of self-trapped excitons, respectively. The results of single-exponential fitting demonstrate that different luminescent centers have different radiation resistance, which may explain why the emission decreases more slowly in the NBE band than in the DBE band. The agglomeration of larger point clusters accounts for the decrease in the concentration of luminescence centers and the increase in the concentration of non-luminescence centers, which indicates that the defect clusters induced by ion implantation act as nonradiative recombination centers and suppress light emission. The results of the photoluminescence spectra of a virgin ZnO single crystal and a ZnO single crystal irradiated with a fluence of 3.4 x 1014 ions/cm~2 show that compared with the virgin ZnO,the emission intensity of irradiated ZnO decreases by nearly two orders of magnitude, which demonstrates that the irradiation effect reduces radiative recombination and enhances nonradiative recombination. The conclusions of photoluminescence are consistent with the IL results.     

Cross Sections of Barium Isotopes in Interaction of 60 MeV／u ^18O with Natural Uranium

The reactions induced by heavy ions lower than 10 MeV/u have been studied widely. Their reaction mechanism has been also understood in more detail. The contribution to the reaction cross sections in the low energy reactions comes mainly from complex nuclei and deep inelastic process. Early studies mainly focused on the nuclear collisions of low and high energies. In the recent years, great attention has been paid on the intermediate energy heavy ion collisions. Among them measurements of the cross sections and recoiling properties for the target fragmentation products have been applied widely to study the mechanism of the nuclear reactions induced by the intermediate energy heavy ions. But there are a few papers on raodioehemieal studies in the intermediate energy region up to now.     

Raman Analysis of 30 MeV C60 Irradiated N-doped Carbon

In the present work, we used the technique of “low energy ion implantation swift; heavy ion irradiation ”to investigate huge electronic excitations induced modification in N-doped graphite-like-carbon.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO₃ crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.