液氮间接冷却晶体单色器第一晶体热变形模拟计算

针对上海光源U27波荡器光源, 用ANSYS有限元软件对晶体单色器第一晶体液氮间接冷却进行数值模拟, 给出晶体表面倾斜误差与热负载、冷却条件和布喇格角范围等因素的关系, 为晶体单色器的设计与制造提供热缓释依据. 晶体距光源中心24m时最大垂直入射功率密度约为60W/mm², 在布喇格角调节范围小于30°时, 晶体厚度大于30mm, 晶体吸收总功率上限可到240W, 即可满足SSRF储存环电子束流升级到400mA的需求, 采用正常液氮(78K)冷却晶体, 晶体表面热变形倾斜误差可控制在3arcsec以下.     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Jahn--Teller Distortion of the Zinc Vacancy in ZnGeP2

A symmetry analysis and a simple dangling bond model are presented for the VZn^- in ZnGeP2, identifying a possible Jahn-Teller distortion mechanism which could naturally explain the localization of the defect wavefunction on two of the nearest-neighbouring P atoms, as deduced for the electron nuclear double resonance experiments.     

单色仪晶体的应力形变和热缓释研究

报道了一种同步辐射光束线单色仪晶体的真空安装应力形变、热缓释方法及其实验结果,在总功率为210W,最大功率密度为1.28W/mm²时,晶体形变的等效曲率半径大于2000m,最大隆起高度小于0.1μm.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

Vector Coherent State Representations of SO5 SU2 SU2 U1 U1 and SO5 U1 U1

VCS representantions of SO₅ SU₂ SU₂ U₁ U₁ and SO₅ U₁ U₁ are discussed.Reduced matrix elements for SO₅ SU₂ SU₂ are derived.The multiplicity of a weight for SO₅ is determined by using the K-matrix technique.     

BiB3O6晶体主轴折射率及其温度系数

利用自准直法，在30℃到170℃温度范围内分别测量0.4880 μm、0.6328 μm、1.0640 μm、1.3414 μm等波长下BiB₃O₆(BIBO)晶体的主轴折射率.得到不同温度下的Sellmeier方程及各主轴折射率的温度系数.计算了1.0795 μm下BIBO晶体的的主轴折射率.与实验测量的结果进行比较，两者的差异不大于2×10－4.     

A Kilowatt Radio-Frequency Excited Diffusively Cooled All-Metal Slab Waveguide CO2 Laser

A new type of rf excited diffusively cooled all-metal slab waveguide CO2 laser is presented, in which the waveguide channel is constructed by two copper side walls and two copper electrodes, and the discharge is confined in the slab waveguide channel in terms of the voltage division structure. From this type of structure, over 1 kW laser power is obtained with an efficieney of more than 13%.     

Properties of a New Nonlinear Optical Crystal CdZn2B2O6

Cadmium dizinc diborate （CdZn2B2O6） single crystals have been grown for the first time. The crystal structure of CdZn2B2O6 is the same as that of the Cd3Zn3B4O12. The x-ray diffraction, infrared and Raman spectra, differential scanning calorimetry analysis and density indicate that the physical and chemical properties of both crystals are very similar. Especially, the nonlinear optical coefficients of CdZn2B2O6 and Cd3Zn3B4O12 crystals are 2.6 and 2.4 times as large as that of KH2PO4 crystal respectively. Chemical etching experiments indicated that these crystals are very stable in neutral solution and not hygroscopic in air at room temperature.     

Thermal Expansion Anomaly of Tb2Fe14Cr3 Compound

We investigate the thermal expansion property of the Tb₂Fe₁₄Cr₃ compound by means of x-ray diffraction. The result shows that the Tb₂Fe₁₄Cr₃ compound has a hexagonal Th₂Ni₁₇-type structure. Negative thermalexpansion is found in the Tb₂Fe₁₄Cr₃ compound from 296 to 493K by x-ray dilatometry. The coefficient of the average thermal expansion is α=-2.82 × 10^-5K^-1. In the temperature range 493--692K, the coefficient of the average thermal expansion is α=1.59 × 10^-5K^-1. The physical mechanism of thermal expansion anomaly of the Tb₂Fe₁₄Cr₃ compound is discussed according to the temperature dependence of magnetization measured by a superconducting quantum interference device.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

β-BaB2O4晶体高压相变的X光衍射研究

 我们用金刚石压砧装置（DAC）高压X射线粉末衍射照相方法，研究了β-BaB₂O₄晶体的相变。压力从0.1 MPa逐步加至17.6 GPa，发现BBO由室温下的六方相经历了若干次相变后，当压力加至11.5 GPa时，转变为无定形相。在11.5 GPa压力前的相变是可逆的，一旦进入无定形相，则相变是不可逆的。     

Comparison of TiO2 and ZrO2 Films Deposited by Electron-Beam Evaporation and by Sol-Gel Process

TiO2 and ZrO2 films are deposited by electron-beam （EB） evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold （LIDT） test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.     

Microwave Response of MgB2/A12O3 Superconducting Thin Films by Microstrip Resonator Technique

Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK （λe0 = 463nm） and surface resistance （R8 = 1.52 mΩ at 11 K and 8. 73 GHz） by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.     

电子束脱除SO2和NOx的概述

综述了电子束脱硫脱氮的原理、特点和发展．中国成都电厂的电子束脱硫脱氮装置的运行，标志着我国工业应用阶段的开始.Removal SO 2 and NO x by electron beam is reviewed. Its basic procedure is described. The electron beam method has many advantages compared to chemical one. The first industrial facility in China has been built in Chengdu Electric Power Plant and it is ruming successfully.     

Research on ZrO2 Thermal Barrier Coatings Modified by High-Intensity Pulsed Ion Beam

We report a modification method for ZrO2 thermal barrier coatings （TBCs） by high-intensity pulsed ion beam （HIPIB） irradiation. Based on the temporal and spatial distribution models of the ion beam density detected by Faraday cup in the chamber and the ions accelerating voltage, the energy deposition of the beam ions in ZrO2 is calculated by Monte Carlo method. Taking this time-dependent nonlinear deposited energy as the source term of two-dimensional thermal conduction equation, we obtain the temporal and spatial ablation process of ZrO2 thermal barrier coatings during a pulse time. The top-layer TBC material in thickness of about 0.2 μm is ablated by vaporization and the coating in thickness of 1 μm is melted after one shot at the ion current density of 200 A/cm^2. This calculation is in reasonable agreement with those measured by HIPIB irradiation experiments. The melted top coat becoming a dense modification layer due to HIPIB irradiation seals the gaps among ZrO2 crystal dusters, and hence barrels the direct tunnel of oxygen.     

A Two-Parameter Deformed Two-Dimensional Interacting Boson Model With Uqp(U3)Uqp(U2)Uqp(SO2) Symmetry

A two-parameter deformed two-dimensional interacting boson model with U_qp(U₃) U_qp(U₂) U_qp(SO₂)symmetry is constructed.It is found that the energy spectrum and transition matrix elements depend very sensitively on the second parameter of deformation.     

Thermal Expansion Anomaly and Spontaneous Magnetostriction of Y2Fe14Al3 Compound

The structure and magnetic properties of Y2Fe14Al3 compound are investigated by means of x-ray diffraction and magnetization measurements. The Y2Fe14Al3 compound has a hexagonal Th2Ni17-type structure. Negative thermal expansion is found in Y2Fe14Al3 compound in the temperature range from 403 to 491K by x-ray dilatometry. The coefficient of the average thermal expansion is α^- = -2.54Х 10^-5 K^-1. The spontaneous magnetostrictive deformations from 283 to 470 K are caJculated by means of the differences between the experimental values of the lattice parameters and the corresponding values extrapolated from the paramagnetic range. The result shows that the spontaneous volume magnetostrictive deformation ωs decreases from 5.74 × 10^-3 to nearly zero with temperature increasing from 283 to 470K, the spontaneous linear magnetostrictive deformation λc along the c-axis is larger than the spontaneous linear magnetostrictive deformation λa in basal-plane in the same temperature below 350 K.