Response of chemical vapor deposition diamond detectors to X-ray

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. The detector's performance is strongly limited by the concentration of defects (grain boundaries and/or impurities) in chemical vapor deposition (CVD) diamond. We report the response of free-standing CVD diamond with a thickness of 300 μm and area of 2×2 cm², synthesized by a hot filament chemical vapor deposition (HFCVD) technique, to 5.9 keV X-ray radiation from a ⁵⁵Fe source. The linear I-V characteristics indicate that CVD diamond has good ohmic contacts. This detector also shows good results such as dark-current of 10⁻⁸ A, photocurrent of 10⁻⁶ A, energy resolution <0.4%, and a high ratio of signal to noise.     

Boron-doped diamond as a new heating element for internal-resistive heated diamond-anvil cell

We have developed an internal-resistive heated diamond-anvil cell (IHDAC) with a new resistance heater – boron-doped diamond (BDD) – along with an optimized design of the cell assembly, including a composite gasket. Our proposed technique is capable of heating a silicate/oxide material with (1) long-term stability (>1?h at 2500?K) and (2) uniform radial temperature distribution (±35?K at 2500?K across a 40-µm area), which are clear advantages over the conventional laser-heated and internal-heated DACs. In addition, the achieved temperature in this study was greater than 3500?K, which mostly covers the possible geotherm of the entire lower mantle. In situ X-ray diffraction (XRD) measurement and ex situ chemical analyses confirmed that weak XRD intensity from the BDD heater and chemical inertness (no boron diffusion into silicate samples). This newly developed IHDAC with a BDD heater can be used to determine the phase diagrams of mantle materials with high precision and be used in lower-mantle petrology.     

High-temperature calibration of a multi-anvil high pressure apparatus

Fusion and solidification of Al and Ag samples, as well as Fe₉₃–Al₃–C₄, Fe₅₆–Co₃₇–Al₃–C₄, and Fe_57.5–Co₃₈–Al₁–Pb_0.5–C₃ alloys (in wt%), have been investigated at 6.3?GPa. Heater power jumps due to heat consumption and release on metal fusion and solidification, respectively, were used to calibrate the thermal electromotive force of the thermocouple against the melting points (mp) for Ag and Al. Thus, obtained corrections are +100°C (for sample periphery) and +65°C (center) within the 1070–1320°C range. For small samples positioned randomly in the low-gradient zone of a high pressure cell, the corrections should be +80°C and +84°C at the temperatures 1070°C and 1320°C, respectively. The temperature contrast recorded in the low-gradient cell zone gives an error about ±17°C. The method has been applied to identify the mp of the systems, which is especially important for temperature-gradient growth of large type IIa synthetic diamonds.     

等离子体增强化学气相沉积法实现硅纳米线掺硼

用等离子体增强化学气相沉积(PECVD)方法成功实现硅纳米线的掺B.选用Si片作衬底，硅烷 （SiH4）作硅源，硼烷（B2H6）作掺杂气体， Au作催化剂，生长温度440℃.基于气-液-固(VLS)机制，探讨了掺B硅纳米线可能的生长机制.PECVD法化学成分配比更灵活，更容易实现纳米线掺杂，进一步有望生长硅纳米线pn结，为研制纳米量级器件提供技术基础. 关键词： 硅纳米线 化学气相沉积 纳米器件     

Carbon encapsulated nickel nanoparticles synthesized by a modified alcohol catalytic chemical vapor deposition method

In this work, a simple and cost-efficient method was demonstrated for the production of carbon encapsulated nickel nanoparticles (CENPs). The CENPs were synthesized from nickel oxide by a modified alcohol catalytic chemical vapor deposition method at atmospheric pressure. Structural characterizations using scanning electron microscopy, transmission electron microscopy and X-ray diffraction indicated that the Ni-core mean diameter and the graphite-layer mean thickness were 98 ± 31 nm and 65 ± 35 nm, respectively. Room temperature magnetization results showed a ferromagnetic behavior of the CENPs, in which the saturation magnetization decreased with decreasing the Ni-to-C ratio whereas the coercivity increased with decreasing the Ni-core diameter.     

Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH₄/H₂/B(OCH₃)₃ gas mixture. A maximum growth rate of 0.65 mg cm⁻² h⁻¹ was obtained with CH₄/H₂/B(OCH₃)₃ radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH₃)₃ that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH₄/H₂/B(OCH₃)₃ ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10²⁰ cm⁻³ with CH₄/H₂/B(OCH₃)₃ ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH₄/H₂/B(OCH₃)₃ ratio of 4/190/10 possessed the best phenol removal efficiency.     

CVD金刚石膜的结构分析

利用x射线广角衍射和低角掠入射散射谱、正电子湮没谱、定性分析软件和Positronfit程序，研究了生长在Si（100）基底上的金刚石膜微结构.研究发现，在样品邻近基底区域为纳米 多晶结构，具有弱的［111］织构；在邻近表面区域为微米多晶结构，具有强的［220］织构 .金刚石膜样品有空位、空位团和空洞3种缺陷，其中主要缺陷是大约10个空位形成的空位团 . 关键词： 金刚石膜 化学气相沉积 x射线掠入射 正电子湮没谱     

TiC-MgO composite: an X-ray transparent and machinable heating element in a multi-anvil high pressure apparatus

ABSTRACT

TiC-MgO composite was developed as a heating element for X-ray study in the multi-anvil high pressure apparatus. We synthesized TiC-MgO blocks (50–70 wt.% of TiC) by compression in a cold isostatic press followed by baking in a gas flow furnace. Heaters of tubular shape were manufactured from the synthesized blocks either by lathe or numerically controlled milling machine. The so-produced heating elements have been proved to generate temperatures up to 2250?K at 10?GPa, condition where classical graphite heaters are not suitable anymore due to graphite-diamond transition. These new heaters have been successfully used for in situ X-ray radiography and diffraction measurements on liquid Fe alloys, exploiting excellent X-ray transparency.     

A chemical kinetic model for chemical vapor deposition of carbon nanotubes

Carbon nanotubes (CNTs) are classified among the most promising novel materials due to their exceptional physical properties. Still, optimal fabrication of carbon nanotubes involves a number of challenges. Whatever be the fabrication method, a process optimization can be evolved only on the basis of a good theoretical model to predict the parametric influences on the final product. The work reported here investigates the dependence of the deposition parameters on the controllable parameters for carbon nanotube growth during Chemical vapor deposition (CVD), through a chemical kinetic model. The theoretical model consisted of the design equations and the energy balance equations, based on the reaction kinetics, for the plug flow and the batch reactor, which simulate the CVD system. The numerical simulation code was developed in-house in a g++ environment. The results predicted the growth conditions for CNT: the deposition temperature, pressure and number of atoms, which were found to be influenced substantially by the initial controllable parameters namely the temperature, volumetric flow rate of the carbon precursor, and the reaction time. An experimental study was also conducted on a CVD system developed in the laboratory, to benchmark the computational results. The experimental results were found to agree well with the theoretical predictions obtained from the model.     

化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

 实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

Effect of freon flow rate on tin oxide thin films deposited by chemical vapor deposition

High quality fluorine-doped tin oxide (SnO₂:F) films on glass substrates were been prepared using chemical vapor deposition (CVD) method. The electrical properties, surface morphologies, structural properties and optical properties of the films were studied by varying the freon flow rates. The structure was analyzed by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to study the morphology. Energy-dispersive spectroscopy (EDS) was conducted to understand the surface fluorine composition of the film. The results showed that crystalline structure of the film had a have cassiterite-like diffraction patterns with a preferred orientation of (1 1 0). Surface roughness was evaluated by atomic force microscopy, characterized by root mean square (RMS) and average value (Ra). The SnO₂:F resistivity decreased as the freon flow rate increased. The films had a uniform thickness and a transmittance of 80–90% within the visible region of the spectrum.     

Role of surface and interface science in chemical vapor deposition diamond technology

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. However, some of the most interesting properties of diamond, including the ability to be grown over large areas by CVD processes, result not from its bulk properties but from its special and unique surface chemistry. The surface chemistry derived properties are as remarkable as the bulk properties, and in the end may enable the development of new applications, technologies, and industries which are at least as important as those based on the bulk properties. Some of these surface properties are extreme chemical inertness, low surface energy, low friction coefficients, negative electron affinity, biological inertness, and high over-voltage electrode behavior. The surface science and some of the interesting ongoing research in these areas are explored and illustrated, and unresolved questions are highlighted.     

Superhydrophobicity of polyvinylidene fluoride membrane fabricated by chemical vapor deposition from solution

Due to the chemical stability and flexibility, polyvinylidene fluoride (PVDF) membranes are widely used as the topcoat of architectural membrane structures, roof materials of vehicle, tent fabrics, and so on. Further modified PVDF membrane with superhydrophobic property may be even superior as the coating layer surface. The lotus flower is always considered to be a sacred plant, which can protect itself against water, dirt, and dust. The superhydrophobic surface of lotus leaf is rough, showing the micro- and nanometer scale morphology. In this work, the microreliefs of lotus leaf were mimicked using PVDF membrane and the nanometer scale peaks on the top of the microreliefs were obtained by the method of chemical vapor deposition from solution. The surface morphology of PVDF membrane was investigated by scanning electronic microscopy (SEM) and atomic force microscope (AFM). Elemental composition analysis by X-ray photoelectron spectroscopy (XPS) revealed that the material of the nanostructure of PVDF membrane was polymethylsiloxane. On the lotus-leaf-like PVDF membrane, the water contact angle and sliding angle were 155° and 4°, respectively, exhibiting superhydrophobic property.     

Controllable growth of individual, uniform carbon nanotubes by thermal chemical vapor deposition

We report on the controllable growth of individual, uniform carbon nanotubes using thermal chemical vapor deposition (CVD). We performed a detailed study of the various factors influencing the growth of single nanotubes. In particular, we investigated the role played by catalyst layer thickness, catalyst dot size, deposition temperature, and gas source pressure on the growth process of straight, single nanotubes. Straight, individual nanotubes with uniform diameter can be obtained by decomposition of 0.1 mbar of acetylene at a temperature of 800 °C over a 5 nm thick nickel film that is patterned into square dots with dimensions below 500 nm. We compare the performance of thermal CVD and of plasma enhanced CVD for growing individual nanotubes.     

Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method

ZnO nanowires with different arsenic concentration were grown on Si (1 0 0) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two-stage diamond anvil with 300?µm culet and with a CVD diamond second stage of 50?µm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86?GPa. The micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86?GPa.     

Atmospheric pressure plasma treatment on graphene grown by chemical vapor deposition

We demonstrate the surface treatment of graphene using an atmospheric pressure plasma jet (APPJ) system. The graphene was synthesized by a thermal chemical vapor deposition with methane gas. A Mo foil and a SiO₂ wafer covered by Ni films were employed to synthesize monolayer and mixed-layered graphene, respectively. The home-built APPJ system was ignited using nitrogen gas to functionalize the graphene surface, and we studied the effect of different treatment times and interdistance between the plasma jet and the graphene surface. After the APPJ treatment, the hydrophobic character of graphene surface changed to hydrophilic. We found that the change is due to the formation of functionalities such as hydroxyl and carboxyl groups. Furthermore, it is worth noting that the nitrogen plasma treatment induced charge doping on graphene, and the pyridinic nitrogen component in the X-ray photoelectron spectroscopy spectrum was significantly enhanced. We conclude that the atmospheric pressure plasma treatment enables controlling the graphene properties without introducing surface defects.     

Electrical transport properties of graphene-covered-Cu wires grown by chemical vapor deposition

We investigated the field-effect transistor (FET) characteristics of 15-μm graphene-covered copper wires (G-wires). Unlike the previously reported graphene FET, carries initially showed p-type like FET characteristics in two-terminal transport measurements. Our results indicate that the electrical transport processes in a G-wire FET occur in both the heavily p-doped contact and the p-doped radial graphene channel, as a p-channel. The interfacial potential barrier between the contact electrode and the radial graphene channel is small, but there is a radial potential barrier that limits electrical transport through the copper core in chemical vapor deposition (CVD) grown samples. The p-type FET characteristics appeared clearly after the oxidation of the G-wires.