有序金属纳米线/棒/管阵列材料的制备及应用

介绍了制备有序金属纳米线/棒/管的方法,主要有模板法、水热合成法与台阶边缘缀饰法等,并概要介绍了有序金属纳米线/棒/管阵列的性质与应用。     

ZnO纳米线/棒阵列的水热法制备及应用研究进展

氧化锌(ZnO)纳米线/棒阵列的质量决定了所构建光电器件的性能. 为了制备出比表面积更大、垂直性更好以及无根部融合的高质量ZnO纳米线/棒阵列, 本文概述了近几年两步水热法可控制备ZnO纳米线/棒阵列的研究进展, 分别探讨了种子层、生长液和生长方法对纳米线/棒阵列形貌的影响, 详细分析了氨水、六次甲基四胺和聚乙烯亚胺对于促进纳米线/棒阵列生长的作用机理, 提出了通过微流控技术可控制备ZnO纳米线阵列提高纳米线生长效率的方法. 最后介绍了ZnO纳米线/棒阵列的形貌对于提高染料敏化太阳能电池、纳米发电机、气体传感器和场发射器件性能的重要作用, 并对未来两步水热法制备ZnO纳米线/棒阵列的发展趋势进行了展望.     

纳米有序体系的模板合成及其应用

评述了以含有高密度的纳米柱形孔道的Al₂O₃膜和有机聚合物膜为模板,制备金属、合金、氧化物、半导体和聚合物及其复合组份的一维纳米结构有序阵列的几种方法、纳米结构的性质和应用的研究进展。可用于模板合成的方法有电化学沉积法、化学镀、化学聚合、化学气相沉积和溶胶-凝胶法等。取决于孔壁和所填充材料的化学性质,所得阵列既可以是由纳米管也可以是由纳米线组成。这样的有序阵列在光学、磁学、催化及电化学等领域有着重要的应用前景。制备新型复合纳米结构有序阵列、开展纳米器件的研制是模板合成研究领域的重要方向。     

TiO_2一维纳米材料及其纳米结构的合成

本文对合成TiO2一维纳米材料及其有序纳米阵列的阳极氧化法、模板法以及水热法进行了全面而系统的评述,着重介绍了它们的最新研究进展。阳极氧化法能制备牢固负载于基体上的TiO2纳米管阵列,这有助于构筑TiO2纳米结构及其在纳米器件上的应用;与多种制备技术如溶胶-凝胶工艺、电化学沉积以及原子层沉积等相结合,模板法可以合成出多种形貌的TiO2纳米材料如纳米管、纳米线和纳米棒,并且可以通过改变所用模板的微观尺寸来调控TiO2一维纳米材料及其有序阵列的微结构参数;水热合成法可以制备出直径小且比表面积大的TiO2纳米管粉末。从目前来看,该法还不能制备出牢固负载于基体上的有序纳米阵列。文章最后指出了TiO2一维纳米材料及其有序纳米阵列合成中存在的问题及今后发展方向。     

模板法合成纳米结构材料

模板法（包括硬模板和软模板法）是制备纳米结构材料的常用方法,可用来制备多种物质的各种形状（如：球形粒子、一维纳米棒、纳米线、纳米管以及二维有序阵列等）的纳米结构,近年来关于这一领域的研究较为活跃。本文介绍了近年来利用氧化铝、二氧化硅、碳纳米管、表面活性剂、聚合物、生物分子等作模板制备多种物质的纳米结构材料的一些进展。     

P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

取向碳纳米管/硅纳米线复合阵列的制备

在阳极氧化铝模板(AAO)的取向微孔内, 利用化学气相沉积(CVD) 技术首先制备了两端开口高度取向的碳纳米管阵列, 再在碳纳米管中间的孔洞内沉积硅纳米线, 成功制备了碳纳米管/硅纳米线(CNTs/SiNWs)核鞘复合阵列结构. 用SEM, TEM, XRD等仪器分析了CNTs/SiNWs核鞘复合阵列和沉积在碳纳米管孔洞内的硅纳米线的生长特性和晶体结构, 利用I-V关系和Fowler-Nordheim方程研究了其场发射(FE)特性, 用荧光光谱分析仪分析了复合阵列的荧光(PL)特性. 证明了模板法制备的CNTs/SiNWs核鞘复合阵列结构可用来制作具有金属/半导体(M/S)特性的纳米PN结, 该复合阵列结构也使SiNWs包覆在CNTs惰性鞘内, 可防止SiNWs在空气中的进一步氧化. 制备出的CNTs/SiNWs核鞘复合阵列结构生长方向高度有序, 直径和长度易于控制, 极少产生其他制备方法中出现的纳米结构弯曲和相互缠绕现象.     

大面积铂-硅纳米线阵列的制备及其在增强甲醇电催化氧化中的应用

提出了一种室温条件下构筑铂覆盖硅纳米线阵列的有效方法.通过将种子生长法和化学沉积技术的有机结合,高质量的铂纳米结构被成功地构筑在硅纳米线阵列表面.采用扫描电镜、X-射线衍射和电化学方法对制备材料的形貌和性质进行了表征.结果表明:所沉积的铂膜具有多孔三维结构,展现了一个放大的电化学活性面积,是相同几何面积硅片电极的6.1...     

硅纳米线阵列的制备及其光电应用

近年来,硅纳米线阵列在宽波段、宽入射角范围内优异的减反射性能及其在光电领域的巨大应用前景引起了相关研究者的广泛关注。本文综述了国内外硅纳米线阵列的制备及其在光电应用方面的最新研究进展。关于硅纳米线阵列的制备方法,主要从"自下而上"和"自上而下"两大类出发,分别阐述了模板辅助的化学气相沉积法、化学气相沉积结合Langmuir-Blodgett技术法和金属催化化学刻蚀法,其中重点介绍了目前使用最为广泛且操作简单的金属催化化学刻蚀法的步骤、机理及控制参数。关于硅纳米线阵列在光电领域的应用,主要阐述了硅纳米线阵列在光电探测器、常规太阳能电池、光电化学太阳能电池、光催化分解水制氢、光催化降解有机污染物方面的应用。最后,从硅纳米线阵列在实际应用中面临的提高光电转换效率和避免硅纳米线阵列腐蚀以提高器件的稳定性等问题出发,展望了硅纳米线阵列的表面修饰及修饰后的性能研究是未来硅纳米线阵列光电应用研究的主要方向之一。     

硅化物纳米线阵列的制备、表征和性能研究

一维纳米材料因其特殊结构引起的新奇的物理和化学性质以及诱人的应用前景而备受关注.已经发展了多种制备一维纳米材料的方法,其中,模板法是一种制备纳米线阵列的常用方法,这种方法已经被成功地用于多种材料纳米线阵列的制备.金属离子辅助的溶液刻蚀方法可以在温和反应条件下大规模制备Si纳米线阵列,是一种重要的制备Si纳米线的手段.本论文用化学刻蚀方法得到的Si纳米线阵列作为模板和Si源,成功地制备出了多种硅化物的纳米线阵列,包括SiC、Mn₂₇Si₄₇和NiSi,对其结构进行了详细的表征,并在性能研究的基础上探索了其可能的应用.     

退火对TiO2纳米管/线复合阵列表面光电性质的影响

采用阳极氧化法制备了TiO2纳米管/线复合阵列. 利用表面光电压谱(SPS)和场诱导表面光电压谱(FISPS)研究了退火对TiO2纳米管/线复合阵列表面光电性质的影响. 结果表明, TiO2纳米管/线复合阵列在晶化前后的导带边缘均出现了束缚激子态, 晶化前由于自建场较弱, 束缚激子态能在正负电场作用下发生不对称偏转; 晶化后, 晶体结构从非晶态变为晶态, 自建场增强, 束缚激子态对正电场敏感并表现出明显的光伏响应, 而在负电场作用下束缚激子态没有任何光伏响应.     

热处理对[NiFe/Cu/Co/Cu]_n多层纳米线磁性能的影响

采用双槽控电位法在阳极氧化铝(AAO)模板中制备了有序均一的[NiFe/Cu/Co/Cu]n多层纳米线阵列,并在不同温度下进行了热处理.利用X射线衍射(XRD)对热处理前后多层线的晶体结构进行了测试.考察了不同退火温度对多层线矫顽力、剩磁比、巨磁电阻(GMR)效应、磁灵敏度的影响.随热处理温度升高,多层纳米线中磁性微晶晶型取向越来越明显,晶体结构更均匀;多层纳米线的矫顽力和剩磁比先增大后减小.300°C下多层纳米线矫顽力达到最大值,GMR最大值可达59%,对应的磁电阻灵敏度(SV)为0.233%Oe-1.     

模板法合成Co纳米线有序阵列的偏光特性

Co nanowire arrays were prepared by anodic alumina oxide template，which formed during DC superposed pulse source anodization process. The structure of porous alumina template and properties of optical polarization of Co nanowire arrays are studied with the help of the scanning electron microscope， X-ray diffraction and infrared spectroscopy. The results showed that Co nanowire arrays have an excellent polarization property in near infrared region in 2700nm. We also found that the properties of optical polarization can also be controlled by adulterating kinds of electrodepositing metal and its alloys， by controlling length of nanowire， and by changing incidence angle.     

Co/Cu多层纳米线阵列的制备与磁性能

利用双槽直流电沉积技术在阳极氧化铝(AAO)模板的纳米孔中获得调制波长为50 和200 nm 的Co/Cu多层纳米线, 多层纳米线的调制波长由电沉积时间控制. 运用扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征纳米线的形貌, Co/Cu多层纳米线的长度约20 μm, 直径约80 nm; 用X射线衍射(XRD)研究多层线的结构; 用振动样品磁强计(VSM)测试纳米线阵列的磁性能; 利用可变磁场结合高灵敏度恒流装置研究巨磁电阻(GMR)特性. 结果表明, Co/Cu多层纳米线具有磁各向异性. 当磁场与纳米线平行和垂直时, 调制波长为50 nm的多层线的矫顽力分别为87500 和34200 A·m-1, 而调制波长为200 nm的多层线阵列的矫顽力分别为28600 和8000 A·m-1. 调制波长为50 nm的多层纳米线的磁电阻变化率高达-%, 而调制波长为200 nm的多层线未产生明显的GMR效应.     

3D rod-like copper oxide with nanowire hierarchical structure: Ultrasound assisted synthesis from Cu2(OH)3NO3 precursor,optical properties and formation mechanism

3-dimensional (3D) rod-like CuO with nanowire hierarchical structure has been synthesized successfully by a facile ultrasound assisted method combined with thermal conversion, using rouaite Cu₂(OH)₃NO₃ as the precursor. The product was characterized by XRD, SEM, TEM, HRTEM and FT-IR spectrum. Its optical properties were studied by means of UV–Vis diffuse reflectance absorption spectroscopy and photoluminescence (PL) spectrum. Series of control experiments have been performed to explore influencing factors to the product morphologies and a possible formation mechanism has been proposed. The results show that each CuO rod assembled by tens of nanowires is 200–300 nm in diameter and about 1000 nm in length. Each nanowire contains many interconnected nanoparticles with sizes of about 15 nm. Particularly, ultrasound processing was found beneficial to the formation of the 3D rod-like CuO with nanowire hierarchical structure.     

Light-controlled organic/inorganic P-N junction nanowires

P-N junctions are of great importance both in modern electronic applications and in understanding other semiconductor devices. Organic/inorganic P-N junction nanowires composed of functional organic molecules and inorganic molecules may be able to realize new or improved chemical and physical properties that were not observed in the individual component on nanosize and their bulk materials. We report herein the fabrication of the organic/inorganic semiconductor P-N junction nanowire and the remarkable performance on the light-controlled diode within a single hybrid P-N junction nanowire. Controlling the conductivity of the P-N junction nanowire by the light irradiation simply to achieve diode work indicates a new way to realize the photoelectric integration in a single nanowire device.     

电沉积法制备金属纳米线阵列膜的偏光特性

Metal nanowire array films were prepared by electrodepositing Cu, Ag, Ni, Co and Cu-Ag on porous anodic alumina film. Optical transmittance of both the porous anodic alumina film and metal nanowire array film was measured in the wavelength range of 400---2600 nm under an obliquely incident light. The experimental results show that metal nanowire array films exhibit a prominent polarization function. It was found that optical polarization properties can be improved by choosing suitable kinds of electrodepositing metal, controlling the shape and length of nanowire, and changing the incident angle.     

Highly ordered MnO2 nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor

AAO/Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire arrays. The ordered MnO₂ nanowire arrays with about 40 nm diameters had been directly fabricated on AAO/Ti/Si substrate by direct current (DC) electrodeposition. The microstructure of the nanowire arrays was investigated by field-emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Their electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na₂SO₄ aqueous solution. The synthesized MnO₂ nanowires had amorphous nature until 400 °C. The deal capacitive behavior was obtained when the as-prepared sample was heat-treated at 200 °C. The specific capacitance of the electrode was about 254 F/g.     

n-型多孔Si/TiO2纳米线异质结构的制备及光电化学性能

采用光辅助电化学腐蚀法制备了n-型多孔硅衬底, 再采用水热法在其表面生长TiO₂纳米线制得了三维n-型多孔Si/TiO₂纳米线异质结构. 通过X射线衍射、 扫描电子显微镜和X射线能量散射等表征证实了n-型多孔Si/TiO₂纳米线异质结构的形成. 紫外-可见漫反射光谱测试结果表明, n-型多孔硅与TiO₂纳米线的复合提高了紫外-可见波段的光吸收. 光电性能测试结果表明, 3个样品中n-型多孔Si/TiO₂纳米线异质结作为光电极的光电流最高, 这说明n-型多孔Si/TiO₂纳米线作为光电极具有更高的光电化学分解水性能.     

Site-specific fabrication of nanoscale heterostructures: local chemical modification of GaN nanowires using electrochemical dip-pen nanolithography

This article describes a new method for site-specific, atomic force microscope (AFM) fabrication of nanowire heterostructures using electrochemical dip-pen nanolithography (E-DPN). We have demonstrated that E-DPN is ideally suited for the in situ modification of nanoscale electronic devices; the AFM tip and the nanowire device can be used as electrodes and the reactants for the modification can be introduced by coating them onto the AFM tip. Specifically, we have created GaN nanowire heterostructures by a local electrochemical reaction between the nanowire and a tip-applied KOH "ink" to produce gallium nitride/gallium oxide heterostructures. By controlling the ambient humidity, reaction voltage, and reaction time, good control over the modification geometry is obtained. Furthermore, after selective chemical etching of gallium oxide, unique diameter-modulated nanowire structures can be produced. Finally, we have demonstrated the unique device fabrication capabilities of this technique by performing in situ modification of GaN nanowire devices and characterizing the device electronic transport properties. These results demonstrate that small modifications of nanowire devices can lead to large changes in the nanowire electron transport properties.