Tm2O3相对于Si的能带偏移研究

利用分子束外延系统在Si (001) 衬底上制备了单晶Tm₂O₃薄膜, 利用X射线光电子能谱研究了Tm₂O₃相对于Si的能带偏移. 得出Tm₂O₃相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm₂O₃的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm₂O₃是一种很有前途的高k栅介质候选材料. 关键词： 2O₃')" href="#">Tm₂O₃ X射线光电子能谱 能带偏移     

SiC外延层表面化学态的研究

用高分辨X射线光电子能谱仪(XPS)和傅里叶变换红外(FTIR)光谱仪研究了SiC外延层表面的组分结构. XPS宽扫描谱,红外掠反射吸收谱及红外镜面反射谱的解析结果说明SiC外延层表面是由Si—O—Si和Si—CH₂—Si聚合体构成的非晶SiC_xO_y:H. SiC外延层表面的化学态结构为Si(CH₂)₄,SiO(CH₂)₃,SiO₂(CH₃)₂,SiO₃(CH₃),Si—Si,游离H₂O,缔合OH,Si—OH,O和O₂. 根据化学态结构和元素电负性确定了化学态的各原子芯电子束缚能顺序,并与XPS窄扫描谱拟合结果相对比,建立了化学态与其束缚能的对应关系,进而用Si(CH₂)₄的实际C 1s束缚能值进行校正,确定了各化学态的束缚能. 结果发现,除了SiC_xO_y(x=1,2,3,4,x+y=4)的Si 2p束缚能彼此不同外,其C 1s和O 1s彼此也不相同,其中SiO₂(CH₃)₂和SiO₃(CH₃)的C 1s束缚能与CH_m和C—O中C 1s的相近,对此从化学态结构,元素电负性和邻位效应进行了解释. 关键词： SiC 化学态 XPS FTIR     

Si，Ge，Zr和Sn掺杂SrTiO3的电子结构和光催化性能第一性原理研究

使用QUANTUM ESPRESSO(QE)软件包实现的密度泛函理论研究了Si, Ge, Zr和Sn掺杂SrTiO₃的结构,电子结构和光催化性能.使用广义梯度近似(GGA)获得SrTiO₃的晶格常数与先前的实验数据非常一致.同时,获得了SrTi_0.875X_0.125O₃(X=Si, Ge, Zr, Sn)四种掺杂体系的晶格常数. SrTiO₃和SrTi_0.875X_0.125O₃(X=Si, Ge, Zr, Sn)四种掺杂的带隙值分别1.853 eV、1.849 eV、1.916 eV、1.895 eV和1.925 eV.在研究五种SrTiO₃体系的光催化性能时,采用剪刀算符对五种SrTiO₃体系的带隙值进行修正.计算本征SrTiO₃和SrTi_0.875X_0.125O₃     

FeOx上AsH3吸附净化的密度泛函研究

基于密度泛函理论研究了AsH₃和O₂分子在α-Fe₂O₃(001)表面和FeO(100)表面的吸附及共吸附性质.结果表明：AsH₃和O₂分子在α-Fe₂O₃(001)表面最稳定的吸附构型都是Hollow吸附位点. AsH₃分子在FeO(100)表面最稳定的吸附位点为Top O吸附位点. O₂分子在FeO(100)表面最稳定的吸附位点为Hollow吸附位点. O₂分子在α-Fe₂O₃(001)和FeO(100)表面吸附后均被活化从而促进AsH₃分子的催化氧化. AsH₃分子在α-Fe₂O₃(001)表面最小的吸附能为-0.7991 eV,在FeO(100)表面最小的吸附能为-0.9117 eV.吸附值数据表明AsH     

C60单晶价带色散的同步辐射光电子谱研究

测量了C₆₀单晶(111)解理面法向发射的角分辨光电子谱.利用同步辐射光源研究了对应于分子轨道HOMO及HOMO-1的能带的色散关系.实验观察到HOMO和HOMO-1能带在Γ—L方向存在明显的色散,最大色散分别为027eV和042eV.色散曲线与理论电子结构基本符合. 关键词：     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

基于透射光谱确定溶胶凝胶ZrO2薄膜的光学常数

基于溶胶凝胶ZrO₂薄膜的紫外/可见/近红外透射实验光谱,采用Swanepoel方法结合Wemple-DiDomenico色散模型,方便地导出了ZrO₂薄膜在200—1200nm波长范围内的光学常数,包括折射率、色散常数、膜层厚度、吸收系数及能量带隙.研究发现,溶胶凝胶ZrO₂薄膜具有高折射率(1.63—1.93,测试波长为632.8nm)、低吸收和直接能量带隙(4.97—5.63eV) 等光学特性,而且其光学常数对薄膜制备过程中的重要工艺 关键词： 光学常数 Swanepoel方法 2薄膜')" href="#">ZrO₂薄膜 热处理     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

Li掺杂对MgH2(001)表面H2分子扩散释放影响的第一性原理研究

本文利用基于密度泛函理论的第一性原理分别研究了MgH₂(001)表面H原子扩散形成H₂分子释放出去的可能路径及金属Li原子掺杂对其影响. 研究结果表明: 干净MgH₂(001)表面第一层释放H原子形成H₂分子有两种可能路径, 其释放能垒分别为2.29和2.50 eV; 当将Li原子替代Mg原子时, 两种H原子扩散释放路径的能垒分别降到了0.31和0.22 eV, 由此表明Li原子掺杂使MgH₂(001)表面H原子扩散形成H₂释放更加容易.     

硅中三空位V3-的超精细相互作用的理论计算

利用Koster-Slater的格林函数方法,计算了硅中三空位V₃^-的电子态能级和波函数.结果表明,V₃^-在禁带中有五条能级:E_(A2)=0.417eV,E_(B1)=0.492eV,E_(B2¹)=0.512ev, E_(A1)=0.532eV,E_(B2²)=0.608eV.根据算得的超精细相互作用常数同实验值的比较,定出V₃^-处于B₁态.V₃^-的B₁态点据第1壳层的几率为60.2％,但主要集中在三空位所确定的平面内的二个原子上. 关键词：     

Structural specificity in CO and H2 oxidation over single crystal copper surfaces

The reaction rates of CO and H₂ with preadsorbed oxygen on copper surfaces in the 〈110〉 zone presented by a cylindrical single crystal are found to display strong structural sensitivity. In both cases the highest reaction rates are observed for surface structures involving both steps and low index face terraces, and in particular surfaces vicinal to {311} and between either {111} or {100} are found to exhibit the highest rates of reaction. Possible mechanisms for the reaction are discussed, and the data are extrapolated to investigate the steady state oxidation of CO in a CO/O₂ gas mixture over copper surfaces in the 〈110〉 zone. The semi-empirical model describing the steady state oxidation reaction predicts that this reaction also exhibits marked crystallographic anisotropy at CO/O₂ partial pressures chosen to maximise the reaction rate.     

A LEED study of UO2(∼100) vicinal surfaces

The ordering and faceting properties of UO₂(～100) vicinal surfaces have been studied via LEED and Auger measurements. The measurements have demonstrated a reduced tendency for step ordering on UO₂(～100) vicinal surfaces when compared to step ordering on UO₂(～111) vicinal surfaces. The UO₂(～100) vicinal surfaces were observed to decompose irreversibly into low-index facets, including prominent (100) facets, at temperatures below those needed for creation of lowest index faceting on UO₂(～111) vicinal surfaces. These properties suggest that (100) terraces, in contrast to (111) terraces, act as surface diffusion barriers that limit longrange surface communication while growing at the expense of intermediate faceting stages.     

On the adsorption of oxygen on the Mo{110} surface and its vicinals

The adsorption of oxygen on a Mo{110} surface and four vicinal planes with steps parallel to 〈100〉, 〈110〉 and 〈111〉 directions, is studied by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The work has the goal to elucidate whether O adsorption on Mo{110} is really as different from O adsorption on W{110} as reported, and what is the cause of the apparent discrepancies between the various reported sticking coefficients on stepped surfaces.     

Substrate steps/adsorbed layer interaction; selective effect on the possible epitaxial relationships: Case of the S/Cu ∼ (111) system

The interaction between monoatomic steps on a vicinal ～ (111) copper surface and the adsorbed sulphur monolayer has been investigated by a method involving the existence of two possible structures of the monolayer. The parts of the surface occupied by each structure, which are equal on a perfect (111) crystal plane, and differ on a vicinal surface (selective effect of the steps), have been deduced from LEED intensity measurements. Experiments on a wide range of surfaces have revealed a very strong selective effect of the steps, even for misorientations as small as 4° off the (111) plane. On surfaces with $\text{〈3}\text{2}\text{1}\text{〉}$ steps, only one monolayer structure exists, which appears to fit perfectly the steps. The behaviour of the other surfaces having the same misorientation angle allowed us to devise a model of the step/monolayer interaction, which includes a partial decomposition of a step into the two nearest $\text{〈3}\text{2}\text{1}\text{〉}$ steps (2D “faceting”). A general framework for exploiting experiments of the kind described above, on other adsorption systems, is also outlined.     

LEED studies of adsorption on vicinal copper surfaces

As a means for studying the role of atomic steps in adsorption phenomena LEED has been used to investigate the properties of vicinal copper surfaces. Single crystalline surfaces were cut at angles up to 20° from the (100) pole along [001] and [011̄] zones. The diffraction patterns obtained for the clean surfaces and after adsorption of oxygen, nitrogen ions, carbon and sulphur are described. The emphasis of the paper is on the method of interpretation of the geometry of the patterns, which may be done by straightforward kinematic analyses. In the case of nitrogen it is found that if the steps are widely separated the structure of the layer adsorbed on the terrace is the same as that on the low index surface. When the step spacing is small, and comparable with the crystalline parameter of the adsorbed layer, modifications occur which give rise to different superlattices which extend over several terraces. Adsorption of sulphur on 〈11〉 steps can produce a change in the periodicity of the adsorbed layer parallel to the step direction. The study of diffraction patterns for vicinal surfaces with different step spacings may provide an interesting technique for verifying the interpretation of patterns for low index surfaces.     

Bias field effects on the dielectric properties of 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 single crystals with different orientations

The domain states and phase transitions in 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ single crystals were investigated by studying their relative permittivity under various dc bias at constant heating and cooling rates. The orientation dependence of the bias field effect was revealed by examining the temperature dependence of relative permittivity as a function of crystal orientation (the 〈111〉, 〈011〉 and 〈001〉 directions) and dc bias field. The crystals basically have a macrodomain rhombohedral ferroelectric state in the ferroelectric phase under zero dc bias. External bias field could modulate the domain state and induce a stable macrodomain state in the crystals. Also, it is proposed that the dc bias applied along the 〈001〉 or 〈011〉 direction could induce a tetragonal ferroelectric phase or an orthorhombic ferroelectric phase, respectively, in an intermediate temperature range.     

Nucleation and orientation of graphite{0001} layers on Pt{110}

Investigations by field electron microscopy revealed that graphite{0;0001} layers grow preferentially on Pt{110}. Layer nucleation and initial growth occurs in the vicinal area of {110} along the 〈112〉 and the 〈100〉 zones and not on the unstepped {110} plane itself. The growth rate in the vicinal area is determined by the epitaxial misfit parallel to the step edges. An alignment of the graphite layer with the underlying {110} is observed. It corresponds to graphite〈101̄0〉 ∥ Pt〈100〉, which coincides with the calculated orientation of smallest epitaxial misfit. The change of relative emission from {110} upon adsorption of graphite is discussed.     

The influence of high uniaxial stress on the ΓI,C conduction band effective mass of gallium arsenide

From a study of the Zeeman splitting of the shallow donor states, the variation of the effective mass in the Γ_IC conduction band minimum of gallium arsenide has been measured as a function of applied uniaxial stress. The effective mass is found to be proportional to the stress, the percentage increase being (0.23 ± 0.06), (0.115 ± 0.015) and (0.075 ± 0.015) kbar^?1 for 〈100〉, 〈110〉 and 〈111〉 stress respectively. The precision inherent in the far-infrared technique employed is greater than that of previous experimental methods.     

Structure and phase composition of thin a-C:H films modified by Ag and Ti

The structure and phase composition of thin a-C:H and a-C:H〈M〉 films (M = Ag, Ti, or Ag + Ti) have been studied by Raman and X-ray photoelectron spectroscopy. The a-C:H〈M〉 films were prepared by ion-plasma magnetron sputtering of a combined target of graphite and metal in an Ar–CH₄ gas mixture. The Raman spectra of these films indicate that their structure is amorphous. The a-C:H〈Ag + Ti〉 films have a more graphitized structure in comparison with pure a-C:H films and films containing only one metal. It is established that carbon in the a-C:H〈Ag + Ti〉 films is in the sp ², sp ³, and C=O states, which are characteristic of the a-C:H, a-C:H〈Ag〉, and a-C:H〈Ti〉 films. In addition, there are also ether (–C–O–C–) or epoxy (?C?O–) carbon groups in the a-C:H〈Ag + Ti〉 films. It has been revealed that silver atoms in the a-C:H〈Ag〉 and a-C:H〈Ag + Ti〉 films form no chemical bonds with carbon, oxygen, and titanium. Titanium in the a-C:H〈Ti〉 and a-C:H〈Ag + Ti〉 films exists in the form of titanium IV oxide (TiO₂).     

Magnitude of spin and charge density wave amplitudes in underdoped cuprates

Self-consistent calculation of spin (charge) density wave (S(C)DW) order parameters have been performed for bilayered cuprates on the basis of a singlet-correlated band model. Evolution of the Fermi surface in the strongly underdoped regime is described by a two-band approach. The smooth development of the pseudogap formation temperature from underdoped to overdoped states is explained and the Fourier amplitudes 〈s_q〉 (spin) and 〈e_q〉 (charge) modulations are calculated. We have found a maximum of the incommensurability for doping 0.09 ÷ 0.11 holes per copper site.