氦离子显微镜对钨中氦行为的实验研究

针对热核聚变面向等离子体钨材料中氦泡形成、演变以及机理研究的需求,克服目前常用离子注入、电子扫描显微镜和透射电子显微镜等离线研究手段存在的不足,提出氦离子显微镜对钨中氦的上述行为原位实时在线研究方法.借助氦离子显微镜的离子注入、显微成像和聚焦离子束纳米加工功能,它可以提供能量为0.5—35 ke V、束流密度可达10~(25) ions/(m~2·s)以上的氦离子束,在该设备上进行钨中氦的注入实验.同时在注入过程,实时在线监测钨中氦泡形成、演变过程以及钨材料表面形貌的变化,原位在线分析钨材料表面氦泡的大小、迁移合并以及其诱发的钨表面和近表面的微观损伤.实验结果表明:氦离子显微镜是研究钨中氦行为演变过程及其微观机理研究的新的研究手段和强有力的实验工具.     

Superconductivity in the palladium-silver-deuterium system

Superconducting transition temperatures up to 16 K have been observed for Pd-Ag alloys charged with deuterium or hydrogen by ion implantation at liquid helium temperatures.     

Light-emitting silicon <Emphasis Type="Italic">pn</Emphasis> diodes

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent high-temperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behaviour of the diodes at low temperatures. Especially, an electrical bistability observed below 50 K is shown to be based on the interplay of bound excitons, free excitons and free carriers in the active area of the diodes. The ionisation of bound excitons is the origin of an improved electroluminescence from the diodes at higher lattice temperatures. PACS 78.60.Fi; 78.55.Ap; 71.35.-y; 71.55.Cn     

The Mössbauer search for Fe in Si

In this review paper, a series of Mössbauer experiments on Fe in Si, spread over almost thirty years, is discussed. In early Mössbauer experiments, the role of precipitate formation during diffusion was insufficiently realized. Later, an apparent inconsistency was observed between ion implantation experiments by recoil implantation of Coulomb excited atoms and by conventional ion implantation. This inconsistency is removed by recent high-resolution Coulomb excitation recoil implantation studies and by ion implantation experiments at the temperature of liquid helium. These studies lead to an unambiguous identification of interstitial Fe and Co in Si. Finally, the present status of the theoretical predictions on the isomer shift of Fe in Si is reviewed.     

Simulation of Ion Paths in the Target Material for the Injection Complex of the BELA Facility

To realize the simulation experiments with the use of two ion beams at the injection complex of the BELA accelerator (Based on ECR ion source Linear Accelerator), it is necessary to determine the energy and irradiation angle of the beam of light ions which will be implanted into the region of radiation damage induced by heavy-ion beam. The depth of light-ion implantation is determined by the energy and kind of particles initiating the damage, as well as by their incidence angle. It is supposed that the incidence direction of heavy ions will coincide with the normal to the specimen surface. In our work, the necessary implantation zone for the iron ion beam with an energy of 3.2 MeV is located at depths of 300–800 nm. The simulation of the hydrogen and helium ion paths in the material of the iron target in the energy range from 150 to 600 keV at the angle to the normal from 0° to 65° is performed. The range of energies and irradiation angles for the hydrogen and helium ions are determined for the implantation into the radiation-induced defect-formation zone.     

Effect of simultaneous helium implantation on the microstructure evolution of Inconel X-750 superalloy during dual-beam irradiation

This study focuses on investigation into the effect of helium implantation on microstructure evolution in Inconel X-750 superalloy during dual-beam (Ni⁺/He⁺) irradiation. The 1 MeV Ni⁺ ions with the damage rate of 10^?3 dpa/s as well as 15 keV He⁺ ions using rate of 200 appm/dpa were simultaneously employed to irradiate specimens at 400 °C to different doses. Microstructure characterization has been conducted using high-resolution analytical transmission electron microscopy (TEM). The TEM results show that simultaneous helium injection has significant influence on irradiation-induced microstructural changes. The disordering of γ′ (Ni₃ (Al, Ti)) precipitates shows noticeable delay in dose level compared to mono heavy ion irradiation, which is attributed to the effect of helium on promoting the dynamic reordering process. In contrast to previous studies on single-beam ion irradiation, in which no cavities were reported even at high doses, very small (2–5 nm) cavities were detected after irradiation to 5 dpa, which proved that helium plays crucial role in cavity formation. TEM characterization also indicates that the helium implantation affects the development of dislocation loops during irradiation. Large 1/3 〈1?1?1〉 Frank loops in the size of 10–20 nm developed during irradiation at 400 °C, whereas similar big loops detected at higher irradiation temperature (500 °C) during sole ion irradiation. This implies that the effect of helium on trapping the vacancies can help to develop the interstitial Frank loops at lower irradiation temperatures.     

The response of a microwave multipolar bucket plasma to ahigh-voltage pulse with finite rise time

A collisional model that describes the response of a microwave multipolar bucket plasma to a high-voltage pulse with finite risetime has been developed for plasma immersion ion implantation (PIII). The agreement between this model and the measurements of the sheath position and target current in a 100 mtorr helium plasma is found to be much improved when the risetime of the pulse and the ion energy distribution during the PIII process is considered     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.     

Positron and deuteron depth profiling in helium-3-implanted electrum-like alloy

In spite of previous extensive studies, the helium behavior in metals still remains an issue in microelectronics as well as in nuclear technology. A gold-silver solid solution (Au₆₀Ag₄₀: synthetic gold-rich electrum) was chosen as a relevant model to study helium irradiation of heavy metals. After helium-3 ion implantation at an energy ranging from 4.2 to 5.6 MeV, nuclear reaction analysis (NRA) based on the ³He(d,p)⁴He reaction, was performed in order to study the thermal diffusion of helium atoms. At room temperature, NRA data reveal that a single Gaussian can fit the He-distribution, which remains unchanged after annealing at temperatures below 0.45 of the melting point. Slow positron implantation spectroscopy, used to monitor the fluence dependence of induced defects unveils a positron saturation trapping, which occurs for He contents of the order of 50-100 appm, whereas concentrations larger than 500 appm seem to favor an increase in the S-parameter of Doppler broadening. Moreover, at high temperature, NRA results clearly show that helium long range diffusion occurs, though, without following a simple Fick law.     

Photorefractive properties of ion-implanted waveguides in strontium barium niobate crystals

0.61 Ba_0.39Nb₂O₆, SBN61), either by proton or helium ion implantation. Proton-implanted samples show a large increase of dark conductivity that reduces or even prevents the recording of refractive index gratings. For waveguides formed by helium implantation this effect is absent, and they can be used for efficient holographic recording. Photorefractive properties of the waveguides are investigated by two-beam coupling. After implantation with 2.0 MeV He⁺ and doses of (0.5-5)×10¹⁵ cm^-2, the samples have to be polarized again, because heating or charge effects at the crystals surface during the implantation process decreases or even reverses the effective electrooptic coefficients in the waveguiding layer. For repoled samples, we find logarithmic gain coefficients of up to 45 cm^-1 with time constants for the build-up of the purely π/2-shifted refractive index grating of the order of 1 ms for the blue lines of an Ar⁺ laser. Photoconductivity depends nonlinearly on light intensity with an exponent x≈0.55. With increasing implanted helium dose, both electronic and nuclear damage of the waveguiding layer grows, and the photorefractive properties of the waveguides are considerably degraded. Received: 20 February 1997/Revised version: 1 May 1997     

Total internal reflection optical switch with injection region isolated by oxygen ion implantation

The characteristics of InGaAsP/InP total internal reflection optical switches were improved by adopting Oxygen ion implantation in forming electrical isolation, which can confine injected carriers successfully and obtain good perpendicular reflective 'wall” whose transparency is controlled by injected carriers. Operating at 1.3-μm wavelength, the extinction ratio at the reflected port of the optical switch is 18.5 dB at a low injection current of 26 mA and the off-state crosstalk is -18.8 dB.     

Temperature-programmed evolution of low-energy,rare-gas ions implanted in Si(100)

The implantation and outdiffusion of 100–500 eV helium and argon ions from Si(100) have been studied using mass spectrometry to measure the thermal evolution of He and Ar atoms. Experimentally determined implantation fractions were compared to results from a Monte Carlo simulation. Deviations from the prediction of the binary elastic collision model were observed for Ar at energies less than 300 eV. Hydrogen adsorbed at submonolayer coverages after ion exposure produced a permeable diffusion barrier.     

Ti-2Al-2.5Zr合金He离子辐照效应研究

 在Ti-2Al-2.5Zr合金中注入能量为75 keV的He离子，注入剂量分别为5×10¹⁶cm^-2，1×10¹⁷ cm^-2。通过显微硬度测量和剖面电子显微观察，研究了He离子对Ti-2Al-2.5Zr合金力学性能和显微组织的影响。结果表明:样品的显微硬度随He离子注量的增加而升高，在温度为350和550 ℃的Ar气中退火后硬度有所下降。剖面电子显微观察发现有位错环和He气泡生成，退火后He气泡有长大、缺陷有回复的趋势。辐照产生的位错环是辐照后硬度升高的直接原因，其退火发生回复又引起硬度随退火温度的升高而降低。     

EPR of neutral vacancy-helium centers in silicon

In this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and are stable to 180°C. By implanting ³He isotope, the Si-AA6 ³He hyperfine spectrum has been observed. Both centers are tentatively identified as vacancy-helium centers in neutral charge states.     

Implantation and spectroscopy of metal atoms in solid helium

The first implantation of neutral Ba and Cs atoms into solid⁴He is reported. We discuss details of the experimental setup and techniques used to load the helium with atoms at concentrations of 10⁸ cm^–3. If photodissociation of Cs molecules and clusters is performed twice per hour this atomic concentration can be kept without a second implantation for almost a day. From the optical spectra of Ba in solid helium we infer no significant difference in the trapping site with respect to that in liquid helium.     

Structure of Ion-Implanted Alloys with Long-Range Order in a Field Ion Microscope

In the present review we describe the series of investigations in which field ion microscopy is used to study the structural and phase changes in alloys with long-range order and in pure metals after ion implantation by different gas ions. It is demonstrated that ion implantation induces defects of different types spread to considerable depths from the irradiated surface that exceed many times the estimated ion mean free path. It is established that disordering and generation of various defects can be observed under irradiation of the ordered alloy surfaces. In PdCuAg alloys being supersaturated solid solutions, the irradiation provokes the intermittent decomposition. The structure of defects induced by ion implantation including disordered regions, dislocations, dislocation configurations, dislocation barriers, vacancy clusters, and segregations of one of the components is analyzed. The structure and sizes of these defects inside single cascades of displacements are determined.     

Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

The dimensions of cluster phases that form on the surfaces of free Cu and Ag films in the case of different irradiation doses are estimated for the first time. It is shown that ion implantation leads to a significant decrease in the number of ions passed through a free film. Under the same conditions of the ion implantation, the concentration of impurity atoms on the surface and their depth-distribution profile for the free film differ noticeably from those for a bulk crystal.     

Plasma immersion ion implantation for silicon processing

Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 μm technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII — fast process, implantation of the whole surface, low cost of ownership — several peculiarities — like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission — must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart‐Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.     

铒、钪膜中离子注入氦的热解析行为

采用热解析法初步研究了铒、钪膜中离子注入氦的热解析行为。研究结果表明:同种元素铒中离子注入氦的热释放峰位相同,但膜的致密性将影响氦的释放量,结构疏松的膜中存在的孔洞是氦的快速释放通道;在相同注入剂量和能量条件下,铒、钪膜中注入氦的热释放峰位不同,这可能与氦在铒、钪膜中的深度分布及膜的致密性有关,利用质子增强背散射法测量出能量为60 keV的4He+在铒、钪膜中的注入深度分别为210,308 nm。