Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes II: Nido-2,3-diethyl-2,3-dicarbahexaborane

Boron-carbon thin films have been successfully deposited on Si (111) from the synchrotron radiation induced decomposition of the nido-2,3-diethyl-dicarbahexaborane, (CH₃CH₂)₂C₂B₄H₆. There are indications that molecular precursor states to complete dissociation exist, and that dissociation is the rate limiting step. As with deposition of boron from decaborane, there is an activation barrier to dissociation of diethylcarborane on Si (111). The composition of the growing film, as determined by the boron to carbon ratio, is strongly dependent upon the boron concentration at the surface of the substrate. The boron concentration of the film increases with increasing film thickness.Part one appeared in [1]     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

The electronic structure of 1,2-PCB10H11 molecular films: a precursor to a novel semiconductor

The band gaps and electronic structure of undoped films of molecular icosahedra of closo-1-phospha-2-carbadodecaborane (1,2-PCB₁₀H₁₁) are reported. 1,2-PCB₁₀H₁₁ adsorbs on Au and Ag substrates to generate molecular thin films with the Fermi level (chemical potential) placed closer to the lowest unoccupied molecular orbital than has been observed with closo-1,2-dicarbadodecaborane (1,2-C₂B₁₀H₁₂, orthocarborane) adsorbed on Co, Cu or Ag. Both 1,2-PCB₁₀H₁₁ and 1,2-C₂B₁₀H₁₂ molecular films exhibit an unoccupied molecular defect state above the Fermi level. The vibrational modes, observed in infra-red absorption, are close to the values expected for the isolated 1,2-PCB₁₀H₁₁ molecule. Consistent with the placement of the Fermi level in the molecular films, fabrication of heterojunction diodes from partially dehydrogenated 1,2-PCB₁₀H₁₁ indicates that the resultant PCB₁₀H_x semiconductor film is more n-type than the corresponding boron carbide semiconductor formed from 1,2-C₂B₁₀H₁₂, orthocarborane. PACS 68.43.-h; 73.20.Hb; 31.15.Ct; 79.60.-i     

The optoelectrical properties of rare earth element Eu doped CuxO based heterojunction photodiode

In this study, the Cu_xO and Eu: Cu_xO thin films were prepared by sol gel spin coating method, which is a cheap and simple method, and coated on glass and n-Si substrates to characterize optical properties and to fabricate heterojunction photodiodes, respectively. The optical properties of Cu_xO films were examined by UV-VIS spectroscopy and the optical band gap of Cu_xO thin film increased from 2.02 eV to 2.04 eV with Eu doping. Raman measurements confirmed a single crystal phase of CuO. The I-V characteristics of the fabricated photodiodes were carried out under dark and various light intensities. The photosensitivity (I_photo/I_dark), ideality factor (n), barrier height (Φ_B) and series resistance (R_S) of diodes were calculated and compared. It was observed that the Eu doping improved the optoelectrical properties of Cu_xO/n-Si photodiode. In addition, the capacitance behavior of diodes was studied by performing C-V measurement and some diode parameters such as Φ_B and depletion width (W_D) were obtained by using capacitance data.     

Structures and photovoltaic properties of copper oxides/fullerene solar cells

Copper oxide (CuO_x) thin films were produced by spin-coating and electrodeposition methods, and their microstructures and photovoltaic properties were investigated. Thin film solar cells based on the Cu₂O/C₆₀ and CuO/C₆₀ heterojunction or bulk heterojunction structures were fabricated on F-doped or In-doped SnO₂, which showed photovoltaic activity under air mass 1.5 simulated sunlight conditions. Microstructures of the CuO_x thin films were examined by X-ray diffraction and transmission electron microscopy, which indicated the presence of Cu₂O and CuO nanoparticles. The energy levels of the present solar cells were also discussed.     

Molybdenum oxide thin films in CdTe‐based electronic and optoelectronic devices

This paper reports on the both possible applications of molybdenum oxide (MoO_x) thin films in combination with hole or electron conducting CdTe. The high quality ohmic contancts and strongly rectifying photodiodes were prepared by the DC magnetron sputtering of MoO_x thin films onto freshly cleaved p‐ and n‐type CdTe single crystal substrates. The analysis of DC and AC electrical properties of the MoO_x/ p‐CdTe ohmic contact was carried out. The dominating current transport mechanisms through the MoO_x/p‐CdTe heterojunction at forward and reverse bias were determined. The unoptimized heterojunction photodiode showed promising rectifying and photoelectrical characteristics for practical application in the photoconductive mode. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low‐temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

The preparation of high‐quality molybdenum oxide (MoO_x) is demonstrated by plasma‐enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO₃, and free of other elements apart from hydrogen (&11 at%). The films have a high transparency in the visible region and their compatibility with a‐Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO_x in hole‐selective contacts for silicon heterojunction solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Tunable optical limiting of gold nanorod thin films

Permalloy (Py) films were deposited on Si(111) or Corning 0211 glass substrates. There were two deposition temperatures: T _s=room temperature (RT) and T _s=270°C. The film thickness (t _f) ranges from 10 to 130 nm. The crystal structure properties of the films were studied by X-ray diffraction and transmission electron microscopy. Mechanical properties (including Young’s modulus E _f and hardness H _f) of each film were measured by the nanoindentation (NI) technique. E _f of the Py/Si(111) films was checked again by the laser induced surface acoustic wave (LA-SAW) technique. It was found that the NI technique is best suited for the measurements of E _f and H _f, but only when the sample belongs to the (soft film)/(soft substrate) system, such as the Py/glass film. For the (soft film)/(hard substrate) system, such as the Py/Si(111) film, the NI technique often provides higher values of E _f and H _f than expected. The anomalous phenomenon, associated with the NI technique may be related to the anisotropic crystal structures in the Py films on different kinds of substrates. From this study, we conclude that [E _f of Py/Si(111)]>[E _f of Py/glass] and [H _f of Py/Si(111)]>[H _f of Py/glass]. The good mechanical properties of the Py/Si(111) film make it a better candidate for recording head applications.     

The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

Boron carbide (B₄C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B₄C multilayer was improved so much.     

Photo-induced site-specific nitridation of plasma-deposited B10C2Hx films: A new pathway toward post-deposition doping of semiconducting boron carbides

We show that dopant impurities can be introduced in a controlled, site-specific manner into pre-deposited semiconducting boron carbide films. B―N bond formation has been characterized by X-ray photoelectron spectroscopy for semiconducting B₁₀C₂H_x films exposed to vacuum ultraviolet photons in the presence of NH₃. Core level photoemission data indicate that B―NH₂ bonds are formed at B sites bonded to other boron atoms (B―B), and not at boron atoms adjacent to carbon atoms (B―C) or at carbon atom sites. Nitridation obeys diffusion-limited kinetics. These results indicate that dopant species can be introduced in a controlled, site-specific manner into pre-deposited boron carbide films, as opposed to currently required dopant incorporation during the deposition process.     

Site-specific electron-induced cross-linking of ortho-carborane to form semiconducting boron carbide

Semiconducting boron carbide (B₁₀C₂H_x) films have been formed by bombardment of condensed ortho-carborane (closo-1,2-dicarbadodecaborane) multilayers on polycrystalline copper substrates by 200 eV electrons under ultra-high vacuum conditions. The film formation process was characterized by X-ray and ultraviolet photoelectron spectroscopies. Electron bombardment results in the cross-linking of the icosahedral units. The cross-linking is accompanied by a shift in the B(1s) binding energy indicating site-specific cross-linking between two boron sites on adjacent carborane icosahedra. An additional shift in valence band binding energies attributed to the surface photovoltage effect is indicative of the formation of a p-type semiconductor. This is the first report of B₁₀C₂H_x formation by electron bombardment of condensed films, and the data indicate that this method is a viable route towards formation of ultra-thin films of tailored composition and cross-linkages for emerging nanoelectronics and sensor applications.     

Fabrication of polycrystalline silicon films by Al‐induced crystallization of silicon‐rich oxide films

Polycrystalline silicon (poly‐Si) films were fabricated by aluminum (Al)‐induced crystallization of Si‐rich oxide (SiO_x) films. The fabrication was achieved by thermal annealing of SiO_x /Al bilayers below the eutectic temperature of the Al–Si alloy. The poly‐Si film resulting from SiO_1.45 exhibited good crystallinity with highly preferential (111) orientation, as deduced from Raman scattering, X‐ray diffraction, and transmission electron microscopy measurements. The poly‐Si film is probably formed by the Al‐induced layer exchange mechanism, which is mediated by Al oxide.     

Photoemission study of the growth of the NdF3/Si(111) interface

Photoemission spectroscopy with synchrotron radiation was used to study the NdF₃/Si(111) interface as a function of annealing temperature for NdF₃ films. These films range in thickness from 1–20 monolayers and were deposited at room temperature. Without annealing, both F-Si and Nd-Si bonding is observed, indicating that the planar triangular NdF₃ molecules lie flat on the Si(111) substrate. At annealing temperatures between 400 and 500° C, the NdF₃/Si(111) interface is dominated by Nd-Si bonding as evidenced from a line-shape analysis of the Si 2 p and Nd 4 f core levels. By resonant excitation of the giant 4 d-4 f absorption resonance, the photoemission signal from the partially occupied 4 f orbitals is enhanced and can be distinguished from the photoemission signal of the overlapping F 2 p valence band. At higher temperatures F is completely lost due to the decomposition of NdF₃.     

Magnetic and optical properties of epitaxial n-type Cu-doped ZnO thin films deposited on sapphire substrates

In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700°C. XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn_1−x Cu _x O film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie temperature (T _c ) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81μ _B /Cu atom was observed for Zn_0.95Cu_0.05O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted directly into the ZnO lattice.     

Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates

Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni₂Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thicknessx follows the growth lawx ²=kt, withk=k ₀ exp(-E _a k _B T), wherek ₀=6.3 × 10^–4cm 2/s andE _a=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.     

Photoluminescence of nanostructured cubic-lattice silicon carbide films grown on a silicon wafer

The light-emitting properties of cubic-lattice silicon carbide SiC films grown on Si(100) and Si(111) substrates with VPE at low temperatures (T _gr ∼ 700°C) are discussed. Investigations of the grown films reveal a homogeneous nanocrystalline structure involving only the 3C-SiC phase. When the electron subsystem of the structure is excited by a He-Cd laser emitting at λ_exit = 325 nm, the photoluminescence (PL) spectra contain a rather strong emission band shifted by about 3 eV toward a short-wave spectral region. At low temperatures, the PL integral curve is split into a set of Lorentz components. The relation between these components and the peculiarities of the energy spectrum of electrons in the nanocrystalline grains of the silicon carbide layers is discussed.     

Investigation on FR(LT)–FR(HT) phase transition and pyroelectric properties of pulsed laser deposited Pb(Zr0.93Ti0.07)O3 thin films

The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(Zr_xTi_1−x)O₃ (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the F_R(LT)–F_R(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the F_R(LT)–F_R(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10⁻⁶ C/(cm² K). The PZT film deposited at 800 °C had the highest remnant polarization (P_r) and the lowest coercive field (E_c), with the values of 34.3 μC/cm² and 41.7 kV/cm respectively.     

Influence of boron on the giant magnetocaloric effect of La(Fe0.9Si0.1)13

The influences of boron addition on the phase formation, Curie temperature and magnetic entropy change of the NaZn₁₃-type La(Fe_0.9Si_0.1)₁₃ compound have been investigated. Eight boron containing La(Fe_0.9Si_0.1)₁₃B_x samples were prepared with x=0, 0.03, 0.06, 0.1, 0.2, 0.3, 0.5 and 0.6, respectively. Experimental results show that a small amount of B addition in La(Fe_0.9Si_0.1)₁₃ forms the solid solution NaZn₁₃-type structure phase by substituting B for Si or doping B into interstitial position of the lattice, preserves its giant magnetocaloric effects due to their first-order structural/magnetic transition, as well as increase its Curie temperature T_c slightly. The maximum magnetic entropy changes in the magnetic field change of 0–1.6 T are around 20 J kg^–1 K^–1 for the samples with Boron addition less than 0.3, while improving the Curie temperatures by 2 K.     

Effect of Mg doping and substrate temperature on the properties of pulsed laser deposited epitaxial Zn1?xMgxO thin films

In this paper, we report on the pulsed laser deposition of epitaxial (0002) oriented Zn_1−x Mg _x O thin films onto (0001) sapphire substrate in O₂ ambient at different deposition temperatures. Pulsed laser deposited Zn_1−x Mg _x O films showed (0002) oriented hexagonal wurtzite structure up to 34% of Mg concentration. The bandgap of Zn_1−x Mg _x O thin films is successfully tuned from 3.3 to 4.2 eV by adjusting the Mg concentration x=0.0 to x=0.34. Pulsed laser deposited Zn_1−x Mg _x O thin films were characterized by XRD, AFM, SEM, PL and UV–VIS spectrometer. We have also studied the effect of deposition temperature on to the structure, surface morphology and optical properties of Zn_1−x Mg _x O thin films.     

Synthesis of phosphorus‐carbide thin films by magnetron sputtering

Phosphorus‐carbide, CP_x (0.025 ≤ x ≤ 0.1), thin films have been synthesized by magnetron sputtering from pressed graphite–phosphorus targets. The films were characterized by X‐ray photoelectron spectroscopy, transmission electron microscopy and diffraction, and nanoindentation. CP_0.1 ex‐hibits C–P bonding in an amorphous structure with elements of curved graphene planes, yielding a material with unique short range order. These features are consistent with what has been predicted by our results of theoretically modeled synthetic growth of CP_x . The films are mechanically resilient with hardness up to 24 GPa and elastic recovery up to 72%. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)