驱动电压对扭曲向列型液晶光学响应时间的影响分析

液晶响应时间是描述液晶显示器性能的重要参数,研究驱动电压对液晶响应时间的影响对确定液晶显示器最佳工作电压具有重要意义。本研究通过理论分析确定了强、弱锚定条件下指向矢上升和下降时间的计算方程,根据电光效应曲线确定了驱动电压选取范围,分析了驱动电压范围内的响应时间变化规律。结果表明:对于本研究所采用的液晶,响应时间随驱动电压的增加呈现先增大后减小的特征,拐点在3 V左右;随着驱动电压的增加,下降时间具有驱动电压成反比的特点,而上升时间则呈现明显的分段特征,驱动电压在2～2.5 V的范围,上升时间几乎不变,驱动电压在2.5～5 V的范围,上升时间增加;结合液晶分子在驱动电压作用下的动力学响应过程,通过强、弱锚定条件下指向矢上升时间和下降时间的计算方程进行模拟可以解释上升时间呈现分段特征的原因。     

基于液晶动态响应的挠曲电系数测量EI北大核心CSCD

基于自组装的液晶动态响应实验装置,研究了液晶挠曲电效应对强锚泊混合排列向列相(HAN)液晶动态响应过程的影响。实验中HAN液晶盒施加脉宽为250 ms、幅度可调的正负单脉冲电压信号,结果发现:幅度相同的正负脉冲电压信号作用下液晶的动态响应不同,幅度不同的正脉冲或负脉冲电压信号作用下液晶的动态响应也不同。通过幅度不同的正脉冲电压信号(3、4、5、6 V)作用下液晶动态响应实验曲线与考虑挠曲电效应情形下液晶动态响应理论曲线之间的比较,得到了液晶材料E7的挠曲电系数为e11+e33=4.0×10-11C/m,与文献中报道的实验测量值基本一致。     

基于液晶动态响应的挠曲电系数测量

基于自组装的液晶动态响应实验装置,研究了液晶挠曲电效应对强锚泊混合排列向列相(HAN)液晶动态响应过程的影响。实验中HAN液晶盒施加脉宽为250 ms、幅度可调的正负单脉冲电压信号,结果发现:幅度相同的正负脉冲电压信号作用下液晶的动态响应不同,幅度不同的正脉冲或负脉冲电压信号作用下液晶的动态响应也不同。通过幅度不同的正脉冲电压信号(3、4、5、6 V)作用下液晶动态响应实验曲线与考虑挠曲电效应情形下液晶动态响应理论曲线之间的比较,得到了液晶材料E7的挠曲电系数为e11+e33=4.0×10-11C/m,与文献中报道的实验测量值基本一致。     

电润湿液体透镜暂态过程的测试与分析

提出在电压驱动下液体透镜的响应包括固有响应和强制响应,固有响应信号的函数形式由液体透镜的各种参数决定,与驱动电压无关,但其系数与驱动电压有关,强制响应与驱动电压具有相同的函数形式,液体透镜暂态过程的变化规律取决于固有响应,同样与驱动电压无关。因此,对同一液体透镜改变驱动电压仅改变暂态过程的响应幅度,不改变暂态过程的变化规律,从而也不改变液体透镜的响应时间。实验验证了液体透镜的响应可分解为固有响应和强制响应,测量了不同电压驱动下液体透镜的响应过程及响应时间,并对测试结果进行了理论分析。另外,观察到电润湿液体透镜的反冲现象,该现象出现在加载电压和撤去电压的初始阶段。     

挠曲电效应对向列相液晶盒响应时间的影响

应用液晶动力学理论和差分迭代方法,考虑上液晶挠曲电特性情形下研究强锚泊混合排列向列相液晶盒撤掉电压时的动态响应过程,数值计算得到液晶盒透过率随时间的变化.结果表明:随展曲和弯曲挠曲电系数和的绝对值|e₁₁+e₃₃|的增加,液晶盒的响应时间逐渐减小,当|e₁₁+e₃₃|=50 pC·m^-1时,响应时间与忽略挠曲电效应的情况相比缩短了一半.     

液晶电光效应的实验研究

在原有液晶电光效应实验内容基础上,测量了0~3V电压条件下扭曲向列相液晶的透过率与光源波长的关系,分析了不同波长的光源对液晶电光效应的影响,同时测量了液晶光开关的响应时间和液晶板的视角特性.     

一种高性能液晶透镜的设计方法

提出了一种高性能液晶透镜的设计方法。该方法结合了电极结构的设计并利用了液晶材料线性响应区。所设计的电极结构用于产生抛物线的电压分布,将驱动电压控制在液晶材料的线性响应区内可以实现抛物线的相位分布。通过该方法设计的液晶透镜,其孔径可以是任意大小,且不依赖高阻膜。所设计的电极结构简单,加工只需要一次光刻。透镜由两个低电压驱动,驱动方法简单,其焦距可通过两个驱动电压进行调节。理论上这种液晶透镜的相位分布在变焦过程中保持理想的抛物线分布,且光焦度正比于两个驱动电压的差值。实验上,通过光刻法加工了所设计的电极结构,测量了液晶材料的线性响应区,制作了液晶层厚度为50μm的液晶透镜。通过偏振干涉原理采集了干涉条纹,并从中提取了相位信息。实验结果表明,透镜的相位服从抛物线分布,且光焦度与驱动电压的差值成正比。实验结果与理论分析一致。     

弹性形变对手征液晶螺旋光轴及电光响应时间的影响

手征向列相液晶螺旋轴即为光轴,此轴的空间取向直接影响着液晶中光传播的特性。采用理论分析和数值模拟相结合的方法,研究了液晶展曲与弯曲形变存在的差异和对手征向列相液晶挠曲电螺旋光轴倾角及动力学响应特性的影响。假设在静电平衡及动力学响应两种状态下,系统均具有统一的挠曲电螺旋光轴,忽略介电各向异性,分别计算了两种不同状态下系统的平均自由能密度。利用欧拉方程及转矩平衡方程得到了螺旋光轴倾角满足的平衡方程及动力学方程。通过数值计算,讨论了两种形变的差异对挠曲电螺旋光轴倾角及动力学响应特性的影响。结果表明两种形变差异的存在,均使螺旋光轴扭曲角及特性响应时间变化,差异越大变化越快,这种影响是不可忽略的,这为液晶电光快速响应提供了依据。     

瞬态抑制二极管电磁脉冲响应建模

针对目前浪涌保护器件性能分析方法不完善、缺乏准确数学模型的问题,提出了一种基于NARX神经网络的电磁脉冲响应时域建模方法,并给出NARX神经网络建模的理论基础及设计步骤。通过组建传输线脉冲测试平台及静电放电实验平台,对NUP2105L型瞬态抑制二极管进行注入实验,采集输入输出实验数据并建立NARX神经网络模型。对建模效果进行分析,所建模型可以较为准确地预测输入脉冲为方波脉冲、人体金属模型及机器模型静电放电电磁脉冲时,响应电压曲线趋势、响应时间、脉冲峰值、箝位时间及箝位电压等性能指标,验证了模型的正确性。     

功率控制的强非局域空间光孤子短程相互作用

研究了功率控制的强非局域空间光孤子短程相互作用.由动量守恒,两个孤子短程相互作用时,孤子的质心轨迹因相位差而发生偏转.实验上证实了偏转幅度与功率比有关,当功率相等时,偏转最大.利用功率对相互作用的调控的特性,测量了液晶分子对光场的响应时间,发现比其对偏置电压的响应时间短很多.     

栅状表面液晶盒的光学属性

基于栅状表面等效锚定能公式和弹性理论,对Bryan-Brown等人提出的混和排列向列相液晶盒进行研究.通过变分理论得到指向矢倾角和扭曲角满足的方程和边界条件.根据这些方程和边界条件,利用差分迭代方法计算出指向矢倾角和扭曲角对应某一个δ/λ值在不同电压下的分布.应用琼斯矩阵方法,研究这种液晶盒的电光效应.这些结果都与栅状表面的几何参数有关,即与周期λ和振幅δ有关.     

Transient response of an electrically addressable nonlinear bistable optical device

A study has been made of the transient response of a Fabry-Perot cavity exhibiting bistability of the optical output with applied voltage. In this system the electro-optic and optical nonlinear effects act cooperatively to produce the switch, and the transient response was shown to have characteristics associated with both mechanisms. The switch was found to be composed of three distinct regions, a purely electro-optic part, followed by a slow change in the cavity intensity brought about by the electro-optic and nonlinear effects, with a final fast switch up to the high transmission state. The relative magnitude of the time duration of regions 1 and 2 was found to be dependent upon the applied voltage, initial dc biasing and optical input power. In particular, critical slowing down was evident in region 2 of the switch for values of applied voltage close to the critical value. In this case region 2 was the dominant part of the switching time. Overdriving the system resulted in the time duration of region 2 decreasing and region 1 becoming more dominant. Qualitative agreement was achieved between the experimental results and theoretical predictions of the transient response of a cavity undergoing a slow change in some external parameter.     

Thin film piezoelectric response characterisation using atomic force microscopy with standard contact mode imaging

This article introduces a technique for observing and quantifying the piezoelectric response of thin films, using standard atomic force microscopes (AFMs). The technique has been developed and verified using strontium-doped lead zirconate titanate (PSZT) thin films, which are known for their high piezoelectric response. Quantification of the electro-mechanical voltage coefficient d(33) (pm/V) is made directly based on the applied peak-to-peak voltage and the corresponding peak-to-peak displacement in the obtained scan image. Under the proposed technique the AFM is configured in contact mode, where the silicon nitride tip is set to follow the film displacement at a single point. A known sinusoidal voltage is applied across the film and the displacement determined as a function of time, rather than the typical AFM measurement of displacement versus tip position. The resulting raster image contains several bands, which are directly related to the AFM scan frequency and the applied sinusoidal voltage and its frequency. Different combinations of the AFM scan frequency and the applied sinusoid frequency have been used to characterise the PSZT thin films, with estimated values of d(33) between 109 and 205 pm/V.     

一种测量脉冲高电压的电容分压器

 研制一种测量脉冲高电压的电容分压器, 该分压器对方波脉冲的响应时间为2.8ns。已用它测量Tesla变压器型强流电子束加速器的主开关导通的脉冲电压和Tesla变压器的谐振特性曲线。     

Optical response from dual-frequency hybrid-aligned nematic liquid crystal cells

Dual-frequency hybrid-aligned nematic liquid crystal cells and the influence of the parameters of a control electric field on their optical response are studied. It is found that the harmonic oscillations of the optical transmission in such cells are observed in the interval between low frequency-to-high frequency voltage switchings unlike in conventional twisted nematic cells. A V-shaped bistable optical response is obtained by successively applying sinusoidal electric fields with frequencies of 1 and 30 kHz to a twisted nematic cell. For a liquid crystal layer 8 ??m thick and an applied voltage of 50 V, the response time is 10 ms. In a hybrid-aligned twisted-nematic cell with a large initial tilt angle of the director (about 70°), the V-shaped optical response is observed when the inclined homeotropic state is switched to the twisted state by applying a 30-kHz field. The initial structure of the layer recovers as a result of natural elastic relaxation, and the response time increases roughly fourfold.     

Electromechanical response of sliding charge-density-waves: Voltage-induced torsional strain in tantalum trisulfide

We have measured the hysteretic voltage-induced torsional strain (VITS) in orthorhombic tantalum trisulfide as functions of voltage, temperature, and torque, which was applied by attaching a small magnetic rod to the center of the sample. We have found that the magnitude, speed, and even direction of the VITS hysteresis loops varied with the applied torque, suggesting that the VITS is a consequence of residual torsional strains in the sample interacting with hysteretic, voltage-induced changes of the charge-density-wave wave vector. The VITS response time is much longer than the time needed for the wave vector to change with response to either applied stress or applied voltage and varies inversely with the CDW current, suggesting that the VITS response requires motion of CDW defects.     

传输线变压器匹配和响应特性的实验研究

针对传统变压器的局限,提出采用柔韧性好的同轴电缆和高导磁率的铁基非晶磁性材料绕制的1∶4阻抗变换的传输线变压器（TLTs）作为输出变换装置,并进行相关的实验研究。根据传输线理论及波的折反射分析了实际工程中的最佳匹配条件以及实际情况中阻抗失配引起的波形畸变;给出了磁芯材料对脉冲的响应分析。实验结果表明:TLTs对输出脉冲的响应良好,改善了波形前沿,减小了能量损耗,且与理论值具有较好的一致性。     

The dynamic response of an inhomogeneous plasma diode to an appliedpotential drop

Recent measurements of the response to an applied step voltage in collisionless plasmas have demonstrated the importance of the initial ion density distribution for the resulting time evolution and the formation of electric double layers. The dynamic response of a plasma diode to an applied step voltage is studied by particle-in-cell simulations and an analytical model. It is shown that an ion-density cavity (a local ion-density minimum with a width of many Debye lengths) can support large potential drops for several electron transit times. The potential drop extends over a distance related to the cavity width. When the applied potential drop exceeds a certain critical value, which depends on the cavity depth, the drop instead concentrates in a cathode sheath, which also is the response obtained for homogeneous initial plasma. The existence regions for the two different response in the appropriate parameter plane are found from the simulations and shown to agree with the regions predicted analytically. The analytical potential profiles agree with those simulated     

Fast voltage transients in capacitive silicon-to-cell stimulation detected with a luminescent molecular electronic probe

The capacitive stimulation of nerve cells from semiconductor chips is a prerequisite for the development of neuroelectronic devices. We report on the primary response of a cell membrane to a voltage step applied to oxidized silicon. It is observed with a luminescent voltage-sensitive dye. We find exponential voltage transients with a time constant of 1-5 micros. We assign the short response to an electrical decoupling by a thin film of electrolyte between oxide and membrane. The high-pass filtering of stimulation is a crucial constraint for the development of silicon-to-neuron interfaces.