Controlled SnO2 nanocrystal growth in SiO2–SnO2 glass‐ceramic monoliths

Crack‐free (100–x) SiO₂–x SnO₂ glass‐ceramic monoliths have been prepared by the sol–gel method obtaining for the first time SnO₂ concentrations of 20% with annealing at 1100 °C. Heat‐treatment resulted in the formation and growth of SnO₂ nanocrystals within the silica matrices. Combined use of Fourier transform–Raman spectroscopy and in situ high‐temperature X‐Ray diffraction shows that SnO₂ particles begin to crystallize in the cassiterite‐type phase at 80 °C and that their average apparent size remains around 7 nm, even after annealing at 1100 °C. Nanocrystal sizes and size distributions determined by low‐wavenumber Raman are in good agreement with those obtained from transmission electron microscopy measurements. Results indicate that the formation and the growth of SnO₂ nanocrystals impose a residual porosity in the silica matrix. Copyright © 2011 John Wiley & Sons, Ltd.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（ LDA）下研究了Si纳米层厚度和O空位缺陷对Si／SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815～2.580nm的Si层厚度范围内, Si／SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si／SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小, Si／SiO2界面吸收系数产生了蓝移; O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si／SiO2界面体系的电子和光学性质,上述研究结果为Si／SiO2界面材料的设计与应用提供了一定的理论依据．     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（LDA）下研究了Si纳米层厚度和O空位缺陷对Si/SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815~2.580nm的Si层厚度范围内,Si/SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si/SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小,Si/SiO2界面吸收系数产生了蓝移;O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si/SiO2界面体系的电子和光学性质,上述研究结果为Si/SiO2界面材料的设计与应用提供了一定的理论依据．     

Hydrogen bonding in the pyrimidine/ formamide system: a concentration‐dependent Raman and DFT study

High‐resolution Raman spectra of pyrimidine (PD) and formamide (FA) mixtures with different compositions recorded in the ring breathing region of PD (ν₁ ∼ 991 cm⁻¹) are presented. The dilution of PD with FA leads to the appearance of a new band at ν₁′ ∼ 994 cm⁻¹, which is assigned to hydrogen‐bonded PD:FA species. From a quantitative analysis of the concentration‐dependent Raman spectra, the average number of FA molecules in the first solvation sphere of PD is determined as being equal to 2. This value is supported by density functional theory (DFT) calculations: a symmetric 1:2 complex is the most stable species among various hydrogen‐bonded PD:FA clusters with stoichiometries ranging from 1:1 to 1:4. A qualitative explanation for the blue shift of the ν₁ mode upon complexation is given. Additionally, we have observed not only similarities but also some differences with respect to the PD:water system. Copyright © 2010 John Wiley & Sons, Ltd.     

A resonance Raman spectroscopic study of the protonation of Disperse Orange 25 in solution and adsorbed on oxide surfaces

The protonation of Disperse Orange 25 (DO25) in aqueous solution, and upon adsorption on oxide surfaces, was studied by resonance Raman (RR) spectroscopy. The neutral and protonated forms of DO25 were modelled by DFT calculations of the isolated molecules in the gas phase at the B3‐LYP/DZ level, enabling calculation of the vibrational spectra of these species, together with vibrational assignments. RR spectra show that DO25 is physisorbed on the SiO₂ surface, but its adsorption on SiO₂ Al₂O₃ or H‐mordenite results in protonation. This observation indicates the presence of Brønsted acidic sites on these oxide surfaces with pK_a values ⩽2.5. RR studies of the adsorption of DO25 can therefore provide useful information on the nature of surface acidity on oxides, which is complementary to that obtained from other probe molecules. Copyright © 2007 John Wiley & Sons, Ltd.     

A single‐crystal Raman and infrared study of the nonlinear optical crystal MBANP

Single‐crystal Raman and polycrystalline thin‐film infrared measurements have been obtained for the polar organic nonlinear optical material 2‐(α‐methylbenzylamino)‐5‐nitropyridine (MBANP). For comparison, thin‐film polycrystalline infrared measurements were also made on 2‐(α‐methylbenzylamino)‐3,5‐dinitropyridine (MBADNP). The long wavelength electronic absorption was measured in several solvents and as a thin solid film. The Raman spectra are dominated by three intense bands attributed to vibrations of the ring, the NO₂ substituent, and the N H bond. The most intense scattering and absorption arose from the α_bb component of the polarisability tensor. This implies that the most significant contribution to the transition polarisability arises from the electronic transition near 383 nm, polarised along the b‐axis of the crystal. The strongest bands in the infrared spectra are also associated with the same three bands, consistent with the predictions of the effective conjugation coordinate (ECC) theory, implying efficient electron–phonon coupling (or electronic delocalisation) in the conjugated system. DFT calculations of vibrational wavenumbers and eigenvectors were used to assign relevant vibrational features and to derive useful information about the molecular structure. This single‐crystal material is also a strong candidate for an efficient laser Raman converter with a large wavenumber shift of 3404 cm⁻¹ and a high damage threshold. Copyright © 2010 John Wiley & Sons, Ltd.     

Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

We report on continuous-wave laser induced crystallisation processes occurring in Si/SiO₂ multiple quantum wells (MQW), prepared by remote plasma enhanced chemical vapour deposition of amorphous Si and SiO₂ layers on quartz substrates. The size and the volume fraction of the Si nanocrystals in the layers were estimated employing micro-Raman spectroscopy. It was found that several processes occur in the Si/SiO₂ MQW system upon laser treatment, i.e. amorphous to nanocrystalline conversion, Si oxidation and dissolution of the nanocrystals. The speed of these processes depends on laser power density and the wavelength, as well as on the thickness of Si-rich layers. At optimal laser annealing conditions, it was possible to achieve ∼100% crystallinity for 3, 5 and 10 nm thickness of deposited amorphous Si layers. Crystallization induced variation of the light absorption in the layers can explain the complicated process of Si nanocrystals formation during the laser treatment.     

Improper hydrogen bonding and motional narrowing in binary mixtures of 2‐ and 3‐bromopyridine in methanol probed by polarized Raman study and DFT calculations

A concentration‐dependent Raman study of the ν(C Br) stretching and trigonal bending modes of 2‐ and 3‐Br‐pyridine (2Br‐p and 3Br‐p) in CH₃OH was performed at different mole fractions of the reference molecule, 2Br‐p/3Br‐p, from 0.1 to 0.9 in order to understand the origin of blue/red wavenumber shifts of the vibrational modes due to hydrogen‐bond formation. The appearance of additional Raman bands in these binary systems at ∼617 cm⁻¹in the case of 2Br‐p and at ∼618 cm⁻¹ in the case of 3Br‐p compared to neat bromopyridine derivatives were attributed to specific hydrogen‐bonded complexes formed in the mixtures. The interpretation of experimental results is supported by density functional calculations on optimized geometries and vibrational wavenumbers of 2Br‐p and 3Br‐p and a series of hydrogen‐bonded complexes with methanol. The parameters obtained from these calculations were used for a qualitative explanation of the blue/red shifts. The wavenumber shifts and linewidth changes for the ν(C Br) stretching and trigonal bending modes as a function of concentration reveal that the caging effects leading to motional narrowing and diffusion‐causing line broadening are simultaneously operative, in addition to the blue shift caused due to hydrogen bonding. Copyright © 2007 John Wiley & Sons, Ltd.     

Correlation of methane Raman ν1 band position with fluid density and interactions at the molecular level

The CH₄ Raman ν₁ symmetric stretching band position was measured at various temperatures and pressures over the range 1–600 bars and 0.3–22 °C. The ν₁ symmetric stretching band shifts to lower wavenumbers with increasing pressure and/or decreasing temperature, and shows a systematic correlation with density over this same range. Ab initio calculations (MP2/aug‐cc‐pVTZ) show that the changes in peak shape and position reflect fundamental distortion of the methane structure as the density increases. Copyright © 2007 John Wiley & Sons, Ltd.     

Mechanism for enhancing dispersion of Co3O4 nanoparticles in Co/SiO2 Fischer–Tropsch synthesis catalyst by adding glycol to impregnating solution: a quick‐XAFS study

In situ Co K‐edge quick‐EXAFS (QEXAFS) coupled with temperature‐programmed oxidation as well as ex situ XAFS was applied to investigating the mechanism for enhancing the dispersion of Co₃O₄ nanoparticles in a calcined Co/SiO₂ Fischer–Tropsch synthesis catalyst prepared by adding triethylene glycol (TEG) to a Co(NO₃)₂.6H₂O impregnating solution. Ex situ Co K‐edge XAFS indicated that, regardless of whether the catalysts were prepared with or without using TEG, the hexaaqua Co (II) complex was formed in impregnated samples which then underwent the dehydration process to some extent during the subsequent drying step at 393 K. In situ QEXAFS and ex situ EXAFS results also indicated that small oxide clusters were formed in the TEG‐modified catalyst calcined at ～400–470 K which interacted with polymer species derived from TEG. Since the Fischer–Tropsch synthesis activity of the TEG‐modified catalyst increased with an increase in the calcination temperature in a similar temperature range [Koizumi et al. (2011), Appl. Catal. A, 395 , 138–145], it was suggested that such an interaction enables the clusters to be distributed over the support surface uniformly, resulting in enhancing their dispersion. After combustion of polymer species, Co₃O₄‐like species were formed, and agglomeration of the Co₃O₄‐like species at high calcination temperatures was suppressed by the addition of TEG to the impregnating solution. It was speculated that the addition of TEG induced the formation of some surface silicate which worked as an anchoring site for Co₃O₄ and Co⁰ nanoparticles during calcination and H₂ reduction, respectively.     

Self‐association and hydrogen bonding of propionaldehyde in binary mixtures with water and methanol investigated by concentration‐dependent polarized Raman study and DFT calculations

The Raman spectra of neat propionaldehyde [CH₃CH₂CHO or propanal (Pr)] and its binary mixtures with hydrogen‐donor solvents, water (W) and methanol (M), [CH₃CH₂CHO + H₂O] and CH₃CH₂CHO + CH₃OH] with different mole fractions of the reference system, Pr varying from 0.1 to 0.9 at a regular interval of 0.1, were recorded in the ν(CO) stretching region, 1600–1800 cm⁻¹. The isotropic parts of the Raman spectra were analyzed for both the cases. The wavenumber positions and line widths of the component bands were determined by a rigorous line‐shape analysis, and the peaks corresponding to self‐associated and hydrogen‐bonded species were identified. Raman peak at ∼1721 cm⁻¹ in neat Pr, which has been attributed to the self‐associated species, downshifts slightly (∼1 cm⁻¹) in going from mole fraction 0.9 to 0.6 in (Pr + W) binary mixture, but on further dilution it shows a sudden downshift of ∼7 cm⁻¹. This has been attributed to the low solubility of Pr in W (∼30%), which does not permit a hydrogen‐bonded network to form at higher concentrations of Pr. A significant decrease in the intensity of this peak in the Raman spectra of Pr in a nonpolar solvent, n‐heptane, at high dilution (C = 0.05) further confirms that this peak corresponds to the self‐associated species. In case of the (Pr + M) binary mixture, however, the spectral changes with concentration show a rather regular trend and no special features were observed. Copyright © 2010 John Wiley & Sons, Ltd.     

Deep UV resonance Raman spectroscopic study of CnF2n+2 molecules: the excitation of C–C σ bond

The σ–σ* transition of C–C bond in C_nF_2n+2 molecules was studied by deep UV resonance Raman spectroscopy. With the C–C σ bond selectively excited by the deep UV laser at 177.3 nm, the resonance Raman spectra of C_nF_2n+2 molecules were obtained on our home‐assembled deep UV Raman spectrograph. The Raman bands at 1299, 1380 and 2586 cm⁻¹ due to the C–C skeletal stretching modes are evidently enhanced owing to the resonance Raman effect. Based on the resonance Raman spectra and theoretical calculation results, it is proposed that the electronic geometry of C_nF_2n+2 molecules at the σσ* excited state is displaced along the directions perpendicular and parallel to the C–C skeleton, and the excited C–C bond is not dissociative due to the delocalization of the excited electron in σ* orbital. Copyright © 2012 John Wiley & Sons, Ltd.     

Further indication of a low quartz structure at the SiO2/Si interface from coincidence Doppler broadening spectroscopy

Results from coincidence Doppler broadening (CDB) measurements on various Si samples and Brazilian quartz having low quartz structure are presented with the aim to give further strong indication of the existence of a low quartz structure, but not of Si divacancies as frequently considered, at the SiO₂/Si interface.     

Doping effect on the phase transition temperature in ferroelectric SrBi2−xNdxNb2O9 layer‐structured ceramics: a micro‐Raman scattering study

The temperature dependence of Raman spectra for SrBi_2−xNd_xNb₂O₉ ceramics (x from 0 to 0.2) has been studied in a wide temperature range from 80 to 873 K. It is found that the peak position of the A_1g[Nb] phonon mode at 207 cm^–1, which is directly associated with the distortion of NbO₆ octahedron, decreases with increasing Nd composition, while the A_1g[O] phonon mode at 835 cm^–1 increases. Moreover, both the peak position and intensity of the A_1g[Nb] phonon mode reveal strong anomalies around the ferroelectric to paraelectric phase transition temperature. It indicates that the phase transition temperature decreases from about 710 to 550 K with increasing Nd composition, which is due to the fact that the introduction of Nd ions in the Bi₂O₂ layers reduces the distortion extent of NbO₆ octahedron. Copyright © 2011 John Wiley & Sons, Ltd.     

Substituent effects in the Baeyer–Villiger reaction of acetophenones: a theoretical study

This paper reports the first complete theoretical study of substituent effects on the mechanism of the Baeyer– Villiger (BV) reaction in non‐polar solvents taking into account the lowest‐energy mechanism that has been proposed for this rearrangement which is non‐ionic and fully concerted. The BV reaction of p‐substituted acetophenones, p‐XC₆H₄COCH₃ (X = NO₂, CN, H, CH₃, OCH₃), with performic (PFA) and trifluoroperacetic (TFPAA) acids, catalyzed by formic (FA) and trifluoroacetic (TFAA) acids, respectively, using the MPWB1K functional and the 6‐311G(d,p) and 6‐311++G(d,p) basis sets, are studied. Solvent effects are taken into account by means of the PCM continuum model using dichloromethane as solvent. Electron‐donating substituents on the aryl group have a relatively small activation effect on the first step, but a pronounced activation effect on the second to the point of being able to change the rate‐determining step (RDS) of the reaction, as observed in the case of p‐methoxyacetophenone with TFPAA acids. After analyzing the changes in Gibbs free energy of activation, geometrical parameters, and charge distributions of the transition states (TSs), explanations are provided for the two distinct effects that substituents on the ketone have on the kinetics of the addition and migration steps of the BV oxidation. The effect of the acid/peracid pair used is also discussed. Copyright © 2008 John Wiley & Sons, Ltd.     

TDDFT study on the excited‐state hydrogen bonding of N‐(2‐hydroxyethyl)‐1,8‐naphthalimide and N‐(3‐hydroxyethyl)‐1,8‐naphthalimide in methanol solution

The time‐dependent density functional theory method was performed to investigate the excited‐state hydrogen‐bonding dynamics of N‐(2‐hydroxyethyl)‐1,8‐naphthalimide (2a) and N‐(3‐hydroxyethyl)‐1,8‐naphthalimide (3a) in methanol (meoh) solution. The ground and excited‐state geometry optimizations, electronic excitation energies, and corresponding oscillation strengths of the low‐lying electronically excited states for the complexes 2a + 2meoh and 3a + 2meoh as well as their monomers 2a and 3a were calculated by density functional theory and time‐dependent density functional theory methods, respectively. We demonstrated that the three intermolecular hydrogen bonds of 2a + 2meoh and 3a + 2meoh are strengthened after excitation to the S₁ state, and thus induce electronic spectral redshift. Moreover, the electronic excitation energies of the hydrogen‐bonded complexes in S₁ state are correspondingly decreased compared with those of their corresponding monomer 2a and 3a. In addition, the intramolecular charge transfer of the S₁ state for complexes 2a + 2meoh and 3a + 2meoh were theoretically investigated by analysis of molecular orbital. Copyright © 2014 John Wiley & Sons, Ltd.     

First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2

We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO₂ through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO₂ than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO₂, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si–Si dimers, which are formed by O-vacancy defects.     

Polarized Raman mapping study of the microheterogeneity in 0.67PbMg1/3 Nb2/3O3‐0.33PbTiO3 single crystal

Polarized micro‐Raman spectroscopy was carried out on the (001) face of a 0.67PbMg_1/3Nb_2/3O₃‐33%PbTiO₃ (PMN‐33%PT) single crystal. The Raman images revealed the spatial variations of the intensity of the Raman bands, suggesting that the structure in the PMN‐33%PT single crystal varied from one micro‐area to another. When changing the polarization direction of the incident light with respect to the selected crystalline axes, the intensities of the Raman modes varied periodically. According to the Raman selection rules (RSRs), the angular dependences of the Raman modes indicated that the PMN‐33%PT single crystal is in the monoclinic phase. Furthermore, the color patterns in the Raman images were associated with the coexistence of the M_A‐ and M_C‐type monoclinic phases in the PMN‐33%PT single crystal. Our results provide useful information for understanding the microheterogeneity of the relaxor PMN‐xPT single crystals with compositions near the morphotropic phase boundary region. Copyright © 2010 John Wiley & Sons, Ltd.