用于红外焦平面的正方形孔径球面微透镜阵列研究

针对目前红外焦平面光敏阵列中存在的占空比小、光能利用率低的实际问题,展开了正方形孔径球面微透镜阵列制作及其与红外焦平面阵列集成应用的研究.本文从红外焦平面光敏阵列特点入手,对比分析了正方形孔径相比于传统圆形孔径微透镜阵列在光能利用上的优势.提出正方形孔径微透镜阵列激光直写变剂量曝光制作技术,建立光刻胶曝光数学模型和正方形球面微透镜面型函数,以此为基础,编制直写设备变剂量曝光控制软件;利用长春理工大的学复合坐标激光直写系统和等离子刻蚀机进行相关工艺实验,制作了阵列256×256、单元尺寸40×40 μm²、球面半径60 μm、单元间距1 μm的红外石英微透镜阵列;并将其与相应阵列的碲-镉-汞红外光敏阵列进行集成.结果表明:微透镜的占空比达到95%,红外焦平面光能利用率从原来的60%提高到90% 以上.由此得出结论:变剂量曝光制作微透镜技术是可行的,正方形孔径球面微透镜阵列代替圆形孔径微透镜阵列,对于提高红外探测器的灵敏度、信噪比、分辨率等性能具备明显优势.     

Diffractive Microlens Array Monolithic Integration with PtSi Focal Plane array

Diffractive microlens arrays can completely collect the light at the focal plane and concentrate it into a smaller spot size on the detector plane, the photodetector area can be substantially reduced. Increased gamma radiation hardening and noise reduction result from the decrease in photodetector sensitive area. The diffractive microlens arrays have been designed by considering the correlative optical and processing parameters for PtSi focal plane array. They have been fabricated on the backside of PtSi focal plane array chip by successive photolithography and Ar⁺ ion-beam-etching technique. The alignment of microlens array with PtSi focal plane array was completed by a backside aligner with IR light source. The practical processes and fabrication method are discussed. The performance parameters of PtSi FPA with diffractive microlens array are presented.     

紫外衍射微透镜阵列的设计与制备

为了提高紫外焦平面阵列的填充因子,可以通过微透镜阵列与紫外焦平面阵列的集成,以改善紫外焦平面阵列的探测性能。根据标量衍射理论设计了用于日盲型紫外焦平面阵列的128×128衍射微透镜阵列,其工作中心波长为350nm,单元透镜F数为F/3.56。采用组合多层镀膜与剥离的工艺方法制备了128×128衍射微透镜阵列,对具体的工艺流程和制备误差进行了分析,测量了衍射微透镜阵列的光学性能。实验结果表明:衍射微透镜阵列的衍射效率为88%,与理论值95%有偏差,制备误差主要来自对准误差和线宽误差。紫外衍射微透镜阵列具有均匀的焦斑分布,与紫外焦平面阵列单片集成能较好地改善器件的整体性能。     

用于红外焦平面的正方形孔径球面微透镜阵列研究

针对目前红外焦平面光敏阵列中存在的占空比小、光能利用率低的实际问题,展开了正方形孔径球面微透镜阵列制作及其与红外焦平面阵列集成应用的研究.本文从红外焦平面光敏阵列特点入手,对比分析了正方形孔径相比于传统圆形孔径微透镜阵列在光能利用上的优势.提出正方形孔径微透镜阵列激光直写变剂量曝光制作技术,建立光刻胶曝光数学模型和正方形球面微透镜面型函数,以此为基础,编制直写设备变剂量曝光控制软件;利用长春理工大的学复合坐标激光直写系统和等离子刻蚀机进行相关工艺实验,制作了阵列256×256、单元尺寸40×40μm2、球面半径60μm、单元间距1μm的红外石英微透镜阵列;并将其与相应阵列的碲-镉-汞红外光敏阵列进行集成.结果表明:微透镜的占空比达到95%,红外焦平面光能利用率从原来的60%提高到90%以上.由此得出结论:变剂量曝光制作微透镜技术是可行的,正方形孔径球面微透镜阵列代替圆形孔径微透镜阵列,对于提高红外探测器的灵敏度、信噪比、分辨率等性能具备明显优势.     

原子力显微镜加工红外微透镜阵列的研究

提出了利用原子力显微镜灰阶阳极氧化方法加工Si、Ge、GaAs等晶体材料为基础的红外微透镜阵列.加工了3×3的红外硅微透镜阵列,微透镜的高度和表面直径重复性误差分别为0.2nm和6.0 nm,微透镜的平均曲率半径为510.8 nm.分析了原子力显微镜加工红外微透镜产生面型结构误差的原因,并提出了减小面型结构误差的方法.利用此种方法加工的折射、衍射和混合红外微透镜阵列可以进一步缩小红外成像系统的尺寸.     

Uncooled microbolometer detector: recent developments at ULIS

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35-μm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160×120 and 384×288 arrays production. Besides a wide-band version from uncooled 320×240/45 μm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 μm pixel-pitch detector as well as the wide-band 320×240 infrared focal plane arrays with a pixel pitch of 45 μm. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570M (2005).     

Towards dualband megapixel QWIP focal plane arrays

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 × 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024 × 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.     

红外焦平面阵列非线性校正曲线测量方法

针对红外焦平面阵列强度响应的非线性失真现象,本文提出了一种基于单波长激光器测定红外焦平面阵列非线性校正曲线的方法,设计出用于测量的实验装置,并通过实验研究获得了实测的非线性校正曲线。结果表明,该方法规避了红外焦平面阵列光谱响应不均匀性的影响,满足了装置器件在工程技术中通用性和实用性的需要,在简单易行的同时保证了较高的测量精度。     

A method for determining the yield of indium bump contacts for integration in hybrid focal plane arrays at room temperature

A simple electrical method for determining the yield of indium bump integration between the infrared photosensing chip and the silicon readout chip in hybrid focal plane arrays (FPAs) is proposed. In our case, the IR photosensing chip consists of a 16 × 16 HgCdTe (MCT) photovoltaic (PV) array and the readout chip is a 16 × 16 silicon-CCD multiplexer (MUX). However, the method can be used for even larger array sizes. The method allows one to determine the yield of integration at room temperature. In addition, it does not necessitate the vacuum sealing of hybrid FPA in the dewar and subsequent testing at 77 K for determining this yield. The proposed method essentially verifies the electrical connectivity between the MCT PV diodes and their corresponding input diffusions in the CCD MUX on pixel-to-pixel basis. A simple examination of the readout of the whole array on the oscilloscope at room temperature, initiated at the detector and through CCD MUX is used for determining exactly how many MCT PV diodes have been joined successfully to their corresponding CCD MUX pixels after indium bump integration.     

Tunable microlens arrays using polymer network liquid crystal

A tunable-focus microlens array based on polymer network liquid crystal (PNLC) is demonstrated. The PNLC was prepared using an ultraviolet (UV) light exposure through a patterned photomask. The photocurable monomer in each of the UV exposed spot forms an inhomogeneous centro-symmetrical polymer network which acts as a lens when a homogeneous electric field is applied to the cell. The focal length of the microlens arrays is tunable with the applied voltage.     

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice

A very long wavelength infrared(VLWIR) focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×1010cm·Hz~(1/2)·W~(-1). The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.     

Hybrid Integration Between Long Focus Microlens Array and IR Detector Array

A special method, named step simulation method, is proposed for fabricating Si microlens array to improve the performance of infrared focal plane array (IR FPA). The focus length of rectangle-based multistep microlens array with element dimension of 40 µm×30 µm is 885.4 µm by the method, which is much longer than the focus length of microlens array fabricated by conventional Fresnel binary optics technique., The large-scale 256×256 element microlens array is hybridintegrated with the PtSi Schottky-barrier IR FPA by optical adhesive. The test results show that diffractive spot size of the microlens is 17 µm×15 µm and the average optical response of the IR FPA is increased by a factor of 2.4.     

Modulation transfer function of QWIP and superlattice focal plane arrays

Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. In this paper we will discuss the detail MTF measurements of a 1024 × 1024 pixel multi-band quantum well infrared photodetector and 320 × 256 pixel long-wavelength InAs/GaSb superlattice infrared focal plane arrays.     

Two-dimensional phased arrays for application in surgery: Scanning by several focuses

Numerical simulation and comparative analysis of acoustic fields formed by two-dimensional phased arrays designed for ultrasonic surgery are conducted for the case of scanning by several focuses (in particular, by nine focuses arranged in a line and also by an array of nine focuses forming a 3×3 square grid). Calculations are performed for arrays with elements positioned at the surface both regularly (in square, ring, or hexagonal patterns) and randomly. Criteria for evaluating the “quality” of the intensity distributions in the field formed by the array in the case of scanning by several focuses are proposed. The quality of the intensity distributions for arrays containing 255 and 256 elements 5 mm in diameter arranged in regular patterns on the array’s surface (in square, ring, or hexagonal patterns) is inferior to that for arrays containing 256 randomly positioned elements. Among the regular arrays, the highest quality of intensity distributions is obtained for ring arrays, and the lowest quality is obtained for arrays with elements arranged in square or hexagonal patterns. The irregularity in the element positioning the array’s surface improves the quality of intensity distributions by reducing the secondary intensity peaks in the field formed by the array and, primarily, in the focal plane.     

微透镜列阵提高红外探测器探测能力的方法研究

研究用微光学方法提高红外探测器探测能力的机理,通过实验将锗微透镜列阵耦合到180元HgCdTe焦平面红外探测器上,使耦合组件探测率提高到原来的2．8倍,提出的光学耦合效应概念为客观评价微光学聚能元件综合质量及耦合机构性能提供了一种新的方法。还对微透镜列阵的冷屏效应进行了讨论。     

Monolithic Integration of Diffractive Microlens Arrays and Infrared Focal Plane Arrays

Monolithic integration method has been demonstrated to increase the fill factor of the infrared focal plane arrays (IRFPA). Which is consists of 256×256 Pt-Si schottky barrier charge coupled devices(CCD) operation in 3-5m IR region. The relative silicon 256×256 element diffractive microlens arrays have been fabricated on the back side of the substrate of the IRFPA using binary optics technology. The aligning process between IRFPA and microlens arrays on each side of the substrate has been completed by IR mask aligner. The testing results show that the imaging quality is very good and the average optical response of the IR FPA is increased by a factor of 3.0, which is improved by about 25% compared with the hybrid integration method in the previous work.     

Electrically controllable microlens array fabricated by anisotropic phase separation from liquid-crystal and polymer composite materials

Anisotropic phase separation has been used to fabricate an electrically switchable microlens array from nematic liquid crystals. Nematic liquid-crystal-based microlens arrays have been built with diameters of approximately 400 microm and natural focal lengths as small as 1.6 mm. The focal length of each microlens in the array can be changed in milliseconds by an applied electric field. These devices, which have no internal substructures to scatter light, offer higher efficiency and greater light throughput than polymer dispersed devices.     

石英微透镜阵列的制作研究

叙述了采用氩离子束刻蚀的方法制作线列长方形拱面石英微透镜阵列.所制单元石英微透镜底部的外形尺寸为(300×106)um²,平均冠高7.07μm,平均曲率半径202.19μm,平均焦距404.38μm,平均F₂数为3.82,平均光焦度2.47×10³屈光度,扫描电子显微镜和表面探针测试表明,所制线列石英微透镜阵列的图形整齐均匀,单元长方形拱面石英微透镜的轮廓清晰,表面光滑平整.所制微透镜阵列用于高T_c超导红外探测器阵列的实验证实,微透镜的引入可以显著改善超导探测器的光响应特性.     

Microlens arrays for confocal microscopy

A new; high resolution measuring system based on confocal microscopy has been developed for the evaluation of microlens arrays; in particular for applications in confocal microscopy itself. Lenslet arrays for parallel scanning and processing in confocal microscopy were designed as phase-matched Fresnel lenslets and fabricated by direct laser writing. Replica arrays were produced by ultraviolet embossing and hot embossing techniques. Fabricated arrays with a numerical aperture of 0.28 exhibited near diffraction limited performance and a focal length standard deviation of 120 nm in a nominal value of 250 μm. The technique developed represents a convenient and powerful technique for the characterization of lenslet arrays in general.     

Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III–V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiodes and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and interface composition, while the BIRD structure allows for device fabrication without additional passivation. As a demonstration of the large area imaging capabilities of this technology, we have fabricated mid-wavelength 1024 × 1024 pixels superlattice imaging FPAs and 640 × 512 MWIR arrays based on the BIRD concept. These initial FPA have produced excellent infrared imagery.