Raman analysis of bilayer graphene film prepared on commercial Cu(0.5 at% Ni) foil

This study reports the Raman analysis of bilayer graphene films prepared on commercial dilute Cu(0.5 at% Ni) foils using atmospheric pressure chemical vapor deposition. A bilayer graphene film obtained on Cu foil is known to have small areas of bilayer (islands) with a significant fraction of non‐Bernal stacking, while that obtained on Cu/Ni is known to grow over a large area with Bernal stacking. In the Raman optical microscope images, a wafer‐scale monolayer and large‐area bilayer graphene films were distinguished and confirmed with Raman spectra intensities ratios of 2D to G peaks. The large‐area part of bilayer graphene film obtained was assisted by Ni surface segregation because Ni has higher methane decomposition rate and carbon solubility compared with Cu. The Raman data suggest a Bernal stacking order in the prepared bilayer graphene film. A four‐point probe sheet resistance of graphene films confirmed a bilayer graphene film sheet resistance distinguished from that of monolayer graphene. A relatively higher Ni surface concentration in Cu(0.5 at% Ni) foil was confirmed with time‐of‐flight secondary ion mass spectrometry. The inhomogeneous distribution of Ni in a foil and the diverse crystallographic surface of a foil (confirmed with proton‐induced X‐ray emission and electron backscatter diffraction, respectively) could be a reason for incomplete wafer‐scale bilayer graphene film. The Ni surface segregation in dilute Cu(0.5 at% Ni) foil has a potential to impact on atmospheric pressure chemical vapor deposition growth of large‐area bilayer graphene film. Copyright © 2015 John Wiley & Sons, Ltd.     

Theory of the evolution of 2D band in the Raman spectra of monolayer and bilayer graphene with laser excitation energy

A double‐resonance process gives rise to the 2D band in the Raman spectra of monolayer and bilayer graphene. Based on the electronic and vibrational dispersion energies of graphene, the wavenumbers of the 2D band were calculated under different laser excitation energies (from 1.0 to 4.4 eV). Calculated results are in good agreement with experimental data and reproduce the experimental dispersion slope of the 2D band very well. The calculated wavenumbers of the 2D band do not show a linear dependence on the laser excitation energies. Moreover, it is explained that the lowest wavenumber peak of the 2D band of the bilayer graphene, which is composed of four components, has the largest slope with laser excitation energy. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman spectroscopic studies of pulsed laser‐induced defect evolution in graphene

Raman spectra were obtained for graphene after irradiating the samples by pulsed laser (λ = 248 nm). Changes in the spectra were observed as the pulse laser energy density (PLED) was varied from 0.1 to 0.25 J/cm². Changes in bilayer graphene were accompanied by the appearance of the D peak and the broadening of the G peak. Changes in multilayer graphene are more profound as the Raman spectra changes from a multilayer to bilayer and subsequently to monolayer graphene in response to a slow increase in the PLED. The threshold PLED was found to be dependent on the number of graphene layers. We also irradiate graphene with very high PLED (much above the threshold), and the Raman spectra were found to be significantly changed. The G‐band became broader, and red shifted, while the intensity of the 2D‐band was drastically reduced and an intense defect‐related D peak appeared at about 1350 cm⁻¹. The laser ablation of graphene, both with low‐ and high‐energy intensity, is consistent with the reported theoretical predictions. Copyright © 2013 John Wiley & Sons, Ltd.     

Raman Spectroscopic Characterization of Graphene

Abstract

The recent progress using Raman spectroscopy and imaging of graphene is reviewed. The intensity of the G band increases with increased graphene layers, and the shape of 2D band evolves into four peaks of bilayer graphene from a single peak of monolayer graphene. The G band will blue shift and become narrow with both electron and hole doping, whereas the 2D band will blue shift with hole doping and red shift with electron doping. Frequencies of the G and 2D band will downshift with increasing temperature. Under compressed strain, the upshift of the G and 2D bands can be found. Moreover, the strong Raman signal of monolayer graphene is explained by interference enhancement effect. As for epitaxial graphene, Raman spectroscopy can be used to identify the superior and inferior carrier mobility. The edge chirality of graphene can be determined by using polarized Raman spectroscopy. All results mentioned here are closely relevant to the basic theory of graphene and application in nanodevices.     

Probing interlayer coupling in twisted single‐crystal bilayer graphene by Raman spectroscopy

Twisted bilayer graphene, in which interlayer interaction plays a critical role in this coupled system, is characterized for its angle‐dependent electronic and optical properties. Here, we present a systematic Raman study of single‐crystal twisted bilayer graphene grains, with the spectra of each bilayer graphene precisely correlated to its twist angle using combined transmission electron microscopic technique. Van Hove singularities develop as a result of band rehybridization at the crossing Dirac cones of the two layers, giving rise to a critical twist angle that determines the energy separation between the saddle points in the band structure and the resonance Raman spectra accordingly. The 2D mode becomes sensitive to the twist angle, showing the angle‐dependent position, peak width, and intensity. Our results interpreted in the framework of angle‐dependent double resonance scattering provide an important experimental perspective in understanding the coupled bilayer graphene system. Copyright © 2014 John Wiley & Sons, Ltd.     

The influence of impurity formation on electron inelastic scattering of suspended graphene

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two‐phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two‐phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Correlated states in alternating twisted bilayer-monolayer-monolayer graphene heterostructure

Highly controlled electronic correlation in twisted graphene heterostructures has gained enormous research interests recently, encouraging exploration in a wide range of moiré superlattices beyond the celebrated twisted bilayer graphene. Here we characterize correlated states in an alternating twisted Bernal bilayer-monolayer-monolayer graphene of ～ 1.74°, and find that both van Hove singularities and multiple correlated states are asymmetrically tuned by displacement fields. In particular, when one electron per moiré unit cell is occupied in the electron-side flat band, or the hole-side flat band (i.e., three holes per moiré unit cell), the correlated peaks are found to counterintuitively grow with heating and maximize around 20 K - a signature of Pomeranchuk effect. Our multilayer heterostructure opens more opportunities to engineer complicated systems for investigating correlated phenomena.     

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd.     

Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene

We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D + G bands, and located at ~3240 and ~ 4260 cm^–1, respectively. The graphene thickness and stacking geometry effects for these two modes are systematically studied. The features of the 2D' band, which arises from intravalley double resonance, are not sensitive to the variation of thickness with single Lorentzian peak and fixed linewidth. We explain it theoretically by calculating the phonon dispersion mode in k‐space and find that the flat band region of longitudinal optical phonon near Γ point is the mechanism leading to the 2D' band nonsplit. With the thickness increasing, the band position exhibits blueshift and the linewidth increases for the 2D + G band. With changing thickness and stacking geometry of graphene, the intensities of these two high‐frequency bands show obvious different evolution compared with that of G band. Copyright © 2012 John Wiley & Sons, Ltd.     

The influence of chemical solvents on the properties of CVD graphene

The ultra‐clean and defect‐free transfer of chemical vapor deposition (CVD) graphene is essential for its application in electronic devices. Here, we study the influence of commonly used etching solvents during the transfer process, i.e. ammonium persulfate, ferric chloride, and ferric nitrate, on the properties of CVD graphene by Raman spectroscopy. Obvious blue shift and broadening of Raman G and 2D peaks were observed for graphene transferred by ferric chloride and ferric nitrate, as compared to that transferred by ammonium persulfate. These changes are attributed to p‐doping as well as reduction of phonon lifetime of graphene in the presence of residue iron compounds during the transfer process. The latter would also introduce a great reduction of thermal conductivity of graphene, e.g. with 76% reduction for graphene transferred by ferric nitrate as compared to that transferred by ammonium persulfate. This work would provide valuable information for the transfer of high‐quality CVD graphene. Copyright © 2014 John Wiley & Sons, Ltd.     

Band structures of Bernal graphene modulated by electric fields

The tight-binding model is utilized to investigate the influence of modulation electric fields on bilayer Bernal graphene (BBG). The electric potential changes the parabolic bands into oscillatory ones, and induces more band-edge states. As the strength of field is strengthened, it would enhance the oscillation of energy band, affect larger range of energy, induced more band-edge states, and cause more overlapping of valence and conduction band. While the period of field is enhanced, the number of sub-bands and band-edge states would increase. However the deformation of energy band is less violent. The essential features of electronic structure are directly reflected on the density of states (DOS). DOS displays many prominent peaks resulting from the induced band-edge states.     

Triple‐resonant two‐phonon Raman scattering in graphene

The triple‐resonant (TR) second‐order Raman scattering mechanism in graphene is re‐examined. It is shown that the magnitude of the TR contribution to the photon‐G′ mode coupling function in graphene is one order of magnitude larger than the widely accepted two‐resonant coupling. Enhancement of the order of 100 in the Raman intensity, with respect to the usual double‐resonant model, is found for the G′ band in graphene, and is expected in the related sp²‐based carbon materials, as well. Copyright © 2011 John Wiley & Sons, Ltd.     

Tip-Enhanced Raman Spectroscopy and Mapping of Graphene Sheets

Abstract: Single graphene sheets, a few graphene layers, and bulk graphite, obtained via both micromechanical cleavage of highly oriented pyrolytic graphite and carbon vapor deposition methods, were deposited on a thin glass substrate without the use of any chemical treatment. Micro-Raman spectroscopy, tip-enhanced Raman spectroscopy (TERS), and tip-enhanced Raman spectroscopy mapping (TERM) were used for characterization of the graphene layers. In particular, TERM allows for the investigation of individual graphene sheets with high Raman signal enhancement factors and allows for imaging of local defects with nanometer resolution. Enhancement up to 560% of the graphene Raman band intensity was obtained using TERS. TERM (with resolution better than 100 nm) showed an increase in the number of structural defects (D band) on the edges of both graphene and graphite regions.     

Strained graphene as a local probe for plasmon‐enhanced Raman scattering by gold nanostructures

We investigate with Raman spectroscopy how gold nanostructures of different shape, size and geometry locally modify a graphene cover layer through strain. The resulting phonon softening translates into frequency downshifts of up to 85 cm^–1 for the 2D‐mode of graphene. With spatially resolved and excitation dependent Raman measurements we demonstrate that the downshifted Raman peaks exclusively arise from strained graphene subject to plasmonic enhancement by the nanostructures. The signals arise from an area well below the size of the laser spot. They serve as a local probe for the interaction between graphene and intense light fields. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In‐situ Raman spectroscopy of current‐carrying graphene microbridge

In‐situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10⁸ A/cm² in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd.     

Localization of π‐electron density in twisted bilayer graphene

In bilayer graphene, mutual rotation of layers has strong effect on the electronic structure. We theoretically study the distribution of electron density in twisted bilayer graphene with the rotation angle of 21.8° and find that regions with AA‐like and AB‐like stacking patterns separately contribute to the interlayer low‐energy van Hove singularities. In order to investigate the peculiarities of interlayer coupling, the charge density map between the layers is examined. The presented results reveal localization of π‐electrons between carbon atoms belonging to different graphene layers when they have AA‐like stacking environment, while the interlayer coupling is stronger within AB‐stacked regions.

Charge density map for bilayer graphene with a layer twist of 21.8° (interlayer region).     

Raman Spectrum of Epitaxial Graphene on SiC （0001） by Pulsed Electron Irradiation

We report new Raman features of epitaxial graphene （EG） on Si-face 4H-SiC prepared by pulsed electron irradiation （PEI）. With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC（O001） and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si- and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed.     

Food additives characterization by infrared,Raman, and surface‐enhanced Raman spectroscopies

Fourier‐transform infrared (FT‐IR), Raman (RS), and surface‐enhanced Raman scattering (SERS) spectra of β‐hydroxy‐β‐methylobutanoic acid (HMB), L ‐carnitine, and N‐methylglycocyamine (creatine) have been measured. The SERS spectra have been taken from species adsorbed on a colloidal silver surface. The respective FT‐IR and RS band assignments (solid‐state samples) based on the literature data have been proposed. The strongest absorptions in the FT‐IR spectrum of creatine are observed at 1398, 1615, and 1699 cm⁻¹, which are due to ν_s(COOH) + ν(CN) + δ(CN), ρ_s(NH₂), and ν(C O) modes, respectively, whereas those of L ‐carnitine (at 1396/1586 cm⁻¹ and 1480 cm⁻¹) and HMB (at 1405/1555/1585 cm⁻¹ and 1437–1473 cm⁻¹) are associated with carboxyl and methyl/methylene group vibrations, respectively. On the other hand, the strongest bands in the RS spectrum of HMB observed at 748/1442/1462 cm⁻¹ and 1408 cm⁻¹ are due to methyl/methylene deformations and carboxyl group vibrations, respectively. The strongest Raman band of creatine at 831 cm⁻¹ (ρ_w(R NH₂)) is accompanied by two weaker bands at 1054 and 1397 cm⁻¹ due to ν(CN) + ν(R NH₂) and ν_s(COOH) + ν(CN) + δ(CN) modes, respectively. In the case of L ‐carnitine, its RS spectrum is dominated by bands at 772 and 1461 cm⁻¹ assigned to ρ_r(CH₂) and δ(CH₃), respectively. The analysis of the SERS spectra shows that HMB interacts with the silver surface mainly through the  COO⁻, hydroxyl, and  CH₂ groups, whereas L ‐carnitine binds to the surface via  COO⁻ and  N⁺(CH₃)₃ which is rarely enhanced at pH = 8.3. On the other hand, it seems that creatine binds weakly to the silver surface mainly by  NH₂, and C O from the  COO⁻ group. Copyright © 2006 John Wiley & Sons, Ltd.     

旋转双层石墨烯的电子结构

本文将第一性原理和紧束缚方法结合起来, 研究了层间不同旋转角度对双层石墨烯的电子能带结构和态密度的影响. 分析发现, 旋转双层石墨烯具有线性的电子能量色散关系, 但其费米速度随着旋转角度的减小而降低. 进一步研究其电子能带结构发现, 不同旋转角度的双层石墨烯在M点可能会出现大小不同的的带隙, 而这些能隙会增强双层石墨烯的拉曼模强度, 并由拉曼光谱实验所证实. 通过对比双层石墨烯的晶体结构和电子态密度, 发现M点处带隙来自于晶体结构中的“类AB堆垛区”. 关键词： 旋转双层石墨烯 第一性原理 紧束缚 电子结构     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.