A correlation study of small silver clusters

The formalisms of many body perturbation theory and coupled cluster theory have been used to study the electronic and geometric structures of neutral, cationic, and anionic small silver clusters. Hay-Wadt relativistic effective core potentials replacing the twenty-eight core electrons and a Gaussian basis set have been used. Topologically different clusters and clusters belonging to different symmetry groups have been identified and studied in detail. Full geometry optimizations have been carried out at four different correlated levels of theories. Ionization potentials, electron affinities, and fragmentation energies of the optimized clusters have been compared with other experimental and theoretical results available in the literature. No convergence problems are encountered at the various levels of correlated theories. This is noteworthy since it has been claimed in the literature that for d elements the MP series does not converge very well. Received 16 April 2002 / Received in final form 12 September 2002 Published online 21 January 2003 RID="a" ID="a"e-mail: akr@uta.edu     

Optical properties of small silver clusters supported at MgO

We present structural and optical properties of silver clusters Ag_n (n=2, 4, 6, 8) at two model support sites of MgO, stoichiometric MgO(100) and F_S-center defect, based on density functional theory and embedded cluster model. Our results provide the mechanism responsible for the absorption and emission patterns due to the specific interaction between the excitations within the cluster and the support site which is strongly cluster size and structure dependent. We propose Ag₄ at stoichiometric site as well as Ag₂, Ag₄ and Ag₆ at F_S-center defects as good candidates for the emissive centers in the visible regime.     

Processes involved in the formation of silver clusters on silicon surface

We analyze scanning electron microscopy measurements for structures formed in the deposition of solid silver clusters onto a silicon(100) substrate and consider theoretical models of cluster evolution onto a surface as a result of diffusion and formation of aggregates of merged clusters. Scanning electron microscopy (SEM) data are presented in addition to energy dispersive X-ray spectrometry (EDX) measurements of the these films. Solid silver clusters are produced by a DC magnetron sputtering source with a quadrupole filter for selection of cluster sizes (4.1 and 5.6 nm or 1900 and 5000 atoms per cluster in this experiment); the energy of cluster deposition is 0.7 eV/atom. Rapid thermal annealing of the grown films allows analysis of their behavior at high temperatures. The results exhibit formation of cluster aggregates via the diffusion of deposited solid clusters along the surface; an aggregate consists of up to hundreds of individual clusters. This process is essentially described by the diffusion-limited aggregation (DLA) model, and thus a grown porous film consists of cluster aggregates joined by bridges. Subsequent annealing of this film leads to its melting at temperatures lower than to the melting point of bulk silver. Analysis of evaporation of this film at higher temperatures gives a binding energy in bulk silver of ɛ₀= (2.74 ± 0.03) eV/atom. The text was submitted by the authors in English.     

Valence band electron tunneling in metal-oxide-silicon structures

Experimental results are presented for the substrate current appearing in thin oxide metal-oxide-silicon capacitors with a shallow n/p junction beneath the gate when a positive gate voltage in the tunneling regime is applied. The analysis of the current-voltage characteristics shows that for an oxide voltage drop lower than about 5 V the substrate current is due to electron tunneling from the silicon valence band. The dispersion relation in the energy range extending 3 eV below the oxide conduction band is determined from the voltage dependence of the current in the direct tunneling regime. An effective mass of about 0.8m_e is found near the edge of the oxide conduction band, while for lower energies a strong decrease of the effective mass is observed.     

Facile formation of bare silver clusters in electrospray ionization multi-stage mass spectrometry

We report the observation of bare silver cluster cations obtained by electrospray ionization from a solution containing a metal salt and tryptophan. Multiple step collision-induced dissociation in a quadrupole ion trap of Ag₉⁺ is reported.     

Sm富勒烯的价带光电子能谱

用紫外光电子能谱和同步辐射光电子能谱研究了Sm掺杂C₆₀薄膜的价带电子结构.Sm的价电子大部分转移给C₆₀，化学键以离子性为主.对于任何化学配比都没有观察到费米边，所以Sm富勒烯超导相在室温下为半导体性质.获得了很接近单相Sm_2.75C₆₀的样品在费米能级附近的电子态密度分布.固溶相的光电子发射与Sm_2.75C₆₀有明显区别.Sm_xC_{60关键词： 60}的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 价带光电子能谱 电子结构     

Valence band photoemission on metallic Ce systems

The valence band photoemission spectroscopy of metallic Ce systems is inspected with regard to the different models employed for the interpretation of the data. It is concluded, that contrary to general believe, in most systems higher lyingf-excitations within the 4f manifold are observed, and the observation of the Kondo resonance is difficult.     

Valence band of molybdenum by photoelectron spectroscopy

Experimental photoelectron spectra of a clean polycrystalline Mo surface excited by monochromatized Al K _α X-rays are presented. The spectra are compared with valence bands obtained by UPS and by band structure calculations within the 5 eV region below the Mo Fermi level. All results mentioned above display peaks at 0.3, 1.7, 2.8 and 4 eV belowE _F. The energy distribution of the valence band does not vary with photon energy and electron emission angle for the four different polycrystalline Mo surfaces compared. It is concluded that the four peaks representing the Mo valence band are predominantly of bulk origin.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb2 75C6 0 薄膜的价带电子态密度分布 .相纯Yb2 75C6 0 样品通过C1s芯态x射线电子谱峰的位移表征 .结果表明Yb2 75C6 0 是半导体 ,在费米能级处几乎没有电子态分布 .Yb 6s电子态和C6 0 LU MO能带的杂化效应不可忽略 ,有部分Yb 6s电子分布在Yb C6 0 杂化能带上 .     

Valence band x-ray emission spectra of compressed germanium

We report measurements of the valence band width in compressed Ge determined from x-ray emission spectra below the Ge K edge. The width of the valence band does not show any pressure dependence in the semiconducting diamond-type structure of Ge below 10 GPa. On the other hand, in the metallic beta-Sn phase above 10 GPa the valence band width increases under compression. Density-functional calculations show an increasing valence band width under compression both in the semiconducting phase (contrary to experiment) and in the metallic beta-Sn phase of Ge (in agreement with observed pressure-induced broadening). The pressure-independent valence band width in the semiconducting phase of Ge appears to require theoretical advances beyond the density-functional theory or the GW approximation.     

Nanowire formation by coalescence of small gold clusters inside carbon nanotubes

The coalescence of Au₁₃, Au₅₅ and Au₁₄₇ icosahedral clusters encapsulated inside single walled carbon nanotubes (CNTs) of different diameters are investigated using molecular dynamics simulation with semi-empirical potentials. Three steps needed for the formation of encapsulated nanowires are followed in detail, namely, the penetration of clusters in CNTs, the coalescence between two clusters inside CNTs and their accumulation to form wires. It is suggested that no significant energy barrier is encountered during the penetration of free clusters into CNTs provided the CNT radius is large enough, that is, about 0.3 nm larger than the cluster radius. The relative orientation of clusters imposed by the CNT favors their spontaneous coalescence. After coalescence of two clusters, the Au atoms are rearranged to form new structures of cylindrical symmetry that may be seven fold, six fold, five fold, helical or fcc depending on the CNT diameter. The thermal stability of these structures is discussed and the structural properties of nanowires formed by accumulation of many clusters in CNTs are analyzed in detail. A geometrical method is presented which allows the prediction of the structure of multi-shell helical wires, when knowing only the CNT radius. These modeling results suggest the possibility of synthesizing metallic nanowires with controlled diameter and structure by embedding clusters into nanotubes with suitable diameters.