Low-temperature magnetoresistance of Nb-doped TiO2 transparent conducting films

The magnetoresistance of two anatase Nb-doped TiO₂ films has been measured. The samples reveal both negative and positive magnetoresistance component at all measuring temperatures. It is indicated that the Lorentz force effect based on a two-band model can describe the positive magnetoresistance contribution well. Rather than weak localization or Kondo effect, the negative magnetoresistance behaviors follow a semiempirical expression considering the effect of localized magnetic moments. This expression, due to Khosla and Fischer in a paper published 40 years ago [R.P. Khosla, J.R. Fischer, Phys. Rev. B 2 (1970) 4084], is deduced from the s–d exchange Hamiltonian by considering the third-order perturbation. The field dependence of the magnetization curves for both samples reveals ferromagnetic characteristics, which proves the existence of localized magnetic moment in Ti_1?xNb_xO₂ compounds.     

Magnetic breakdown in very dilute aluminum-silver alloys

The temperature and magnetic field dependences of the electrical magnetoresistance of very dilute (1 300 ? RRR ? 10 000) AlAg alloys have been measured for H ? [110]. Although no oscillations were observed, there is evidence in the temperature dependence of the magnetoresistance for the existence of magnetic breakdown.     

Stress effect on the magnetoresistance of amorphous ferromagnets

To investigate the magnetization in amorphous ferromagnetic alloys we measured the change in the magnetoresistance (H⊥j and H 6j) simultaneously applying a tensile stress along the direction of the ribbons. With increasing stress we observed a complete alignment of the magnetic domain vectors M_s parallel andantiparallel (for λ_s > 0) or perpendicular (for λ_s < 0) to the stress axis. It is found that on average a value of σ_s = 10 kg/mm² is sufficient in all measured samples to produce this effect. The change in the magnetoresistance by stress annealing indicates that a preferred domain orientation in stress direction is induced.     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Positive magnetoresistance effect in rare earth cobaltites

The structure, magnetic, and magnetotransport properties of the Pr_0.5Sr_0.5Co_{1 ? x} Fe _x O₃ system have been studied. The ferromagnet-spin glass (x = 0.5)-G-type antiferromagnet (x = 0.7) transitions and the metal—insulator transitions (x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.     

Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB₁₂ (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8–35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler’s rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB₁₂. In the magnetic dodecaborides HoB₁₂, ErB₁₂, and TmB₁₂, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB₁₂ is observed at T > 25 K; in the range T _N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T _N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB₁₂. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB₁₂ and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.     

Isotropic positive magnetoresistance in Co-Al<Subscript>2</Subscript>O<Subscript>n</Subscript> nanocomposites

The magnetotransport properties of Co_x(Al₂O_n)_{100 ? x} nanocomposites were studied in a wide concentration range (34 ≤ x ≤ 74 at %). Negative tunnel magnetoresistance reaching 6.5% in a field of 10 kOe was established. In addition to the negative magnetoresistance, the Co_x(Al₂O_n)_{100 ? x} composites were found to exhibit positive magnetoresistance reaching 1.5% in fields of 10 kOe over the concentration range corresponding to the percolation threshold (54 ≤ x ≤ 67 at %). The positive magnetoresistance is assumed to be due to the simultaneous existence in the composite structure of clusters and individual nanoparticles characterized by different values of the magnetic anisotropy and due to the dipole-dipole interaction between the clusters and nearest neighbor particles.     

Negative slope of resistivity–temperature curve and positive magnetoresistance in antiperovskite ZnCNi3−x Mn x (1.15≤x≤1.5)

In antiperovskite intermetallics ZnCNi_3?x Mn _x , the negative slope coefficient (NSC) dρ/dT of resistivity–temperature curves is observed when x=1.15,1.25,1.4,1.5. The sample with x=1.25 shows a semiconductor-like behavior in the whole temperature range of 15–290 K. By study of the magnetization, magnetoresistance, and low-temperature X-ray diffraction, it is found that Mn dopant significantly affects the physical properties of ZnCNi_3?x Mn _x by changing both the carrier density and the magnetism. The origin of the NSC dρ/dT can be ascribed to the change of hole-like carrier density, which is adjusted by Mn content. The existence of hole-like carriers can be understood rationally by the two-band model. The change of sign of magnetoresistance from positive to negative has been observed in ZnCNi_3?x Mn _x with the change of Mn content, which could be ascribed to the competition between the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations and the Lorentz contribution. When Mn content is low, the Lorentz contribution dominates the sign of magnetoresistance. On the other hand, when Mn content is high, the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations dominates the sign of magnetoresistance.     

Inverse magnetoresistance in (FeCoB)-(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>) magnetic granular composites

The magnetoresistance, magnetization, and microstructure of granular composites with the general formula (Fe₄₀Co₄₀B₂₀)_x(Al₂O₃)_100?x were studied for contents of the amorphous metallic component both above and below the percolation threshold (x≈43). The low-temperature transverse magnetoresistance of the composites is negative at x=41 and practically zero for x=49. For metal contents below the percolation threshold (x=31), a noticeable (7–8%) positive magnetoresistance, reached in magnetic fields of about 17 kOe, was observed. Possible mechanisms of the generation of inverse (positive) magnetoresistance are discussed.     

Study of magnetotransport in double-layered La1.4Ca1.6Mn2O7 manganite: Presence of nano-ferromagnetic domains in paramagnetic matrix

Double-layered manganite La_1.4Ca_1.6Mn₂O₇ has been synthesized using the solid-state reaction method. It had a metal-to-insulator transition at temperature T_M1≈127 K. The temperature dependence of ac susceptibility showed a broad ferromagnetic transition. The two-dimensional (2D)-ferromagnetic ordering temperature (T_C2) was observed as ≈245 K. The temperature dependence of its low-field magnetoresistance has been studied. The low-field magnetoresistance of double-layered manganite, in the temperature regions between T_M1 and T_C2, has been found to follow 1/T⁵. The observed behaviour of temperature dependence of resistivity and low-field magnetoresistance has been explained in terms of two-phase model where ferromagnetic domains exist in the matrix of paramagnetic regions in which spin-dependent tunneling of charge carriers occurs between the ferromagnetic correlated regions. Based on the two-phase model, the dimension of these ferromagnetic domains inside the paramagnetic matrix has been estimated as ∼12 Å.     

Enhancement of low-field magnetoresistance in Fe3O4 particles induced by ball milling

A series of Fe₃O₄ particles with different size have been obtained by mechanical ball milling from t=0-450 h. Crystal structure and microstructure of the samples are analyzed by XRD and SEM. An emphasis has been placed on magnetic and transport properties. The experimental results indicate that the sample t=350 exhibits an enhancement of magnetoresistance (MR) comparing with initial powder compress sample (t=0). The low-field magnetoresistance reaches MR=−6.04% at Verwey temperature 120 K and MR=−2.54% at 290 K. Thermal behavior TGA analysis and investigation of magnetic properties have revealed that there is an oxide layer on surface of Fe₃O₄ particles. It is considered that the enhanced magnetoresistance can be taken into account in terms of spin-dependent tunneling effect between Fe₃O₄ particles.Temperature dependence of magnetization and resistivity are measured in order to study electrical and magnetic behavior near Verwey transition. In addition, we also discuss ball milling time dependence of coercivity H_c and specific magnetization M_s of these samples.     

Electrical resistivity and magnetoresistance of (NiAl)1−xMx,M = 3d transition metals23

Transport properties were investigated in (NiAl)_1?xM_x, M = 3d transition metals, in order to examine the extrinsic nature of NiAl. Experimental results are well described by the s?d exchange (Kondo) theory from which exchange energy J, Kondo temperature T_k, and spin value S were estimated. A comparison between our results and the results from dilute alloys is made.     

Transport properties and magnetoresistance behavior of Nd0.7Pb0.3MnO3 single crystals

Single crystals of Nd_0.7Pb_0.3MnO₃ with large crystal size were obtained by the flux growth. The temperature dependence of the resistivity and magnetoresistance was measured. It has been discovered that a phase transition occurs from a ferromagnetic-metal (FM) to a ferromagnetic-insulator (FI) phase at 120 K, below the Curie temperature. At the Curie temperature, the samples exhibit a larger value of magnetoresistance (MR) than polycrystalline samples. The second peak of the magnetoresistance has been observed on MR(T) curve below the Curie temperature. The transition properties and magnetoresistance behavior were discussed.     

Electrical resistivity and magnetoresistance of CeB6

Electrical resistivity and magnetoresistance of CeB₆ single crystal have been measured in the temperature range from 1.3 to 300 K under the magnetic field up to 85 kOe. Three characteristic phases are distinguished consistently with other measurements. The Kondo like behaviour in the resistivity observed in the high temperature phase is fitted by the conventional form for the dilute Kondo state with the Kondo temperature T_K = 5 ～ 10K and the unitarity limit resistivity $\text{?}{}_{\mathrm{u}}\text{? 110 μΩ}$ cm/Ce-atom. The negative magnetoresistance in the middle phase is stronger with increasing magnetic field and with decreasing temperature suggesting rapid destruction of the Kondo state. The magnetoresistance in the low temperature phase exhibits some anomalies suggesting sub-phases corresponding to several kinds of spin ordering.     

The solution of Hydrogen in TaV2

TaV₂ may be prepared as a random b.c.c. alloy or as a (C-15) Laves phase. The behavior of hydrogen dissolved in b.c.c. TaV₂ is significantly different than that exhibited by hydrogen dissolved in (C-15) TaV₂. The b.c.c. TaV₂/H₂; system is similar to pure vanadium/H₂; in the region of hydrogen solid solution, the electronic contribution to the thermodynamics of solution is negligible and the system exhibits apparent H-H attractive interactions. A non-stoichiometric f.c.c. dihydride is formed at p_H2 = 10 atm, T = 273 K. (C-15) TaV₂ does not form a hydride phase; hydrogen is continuously absorbed into solid solution to a maximum hydrogen content H/M ? 0.60. The solid solution of hydrogen in (C-15) TaV₂ exhibits trends which are typical of intermetallie/H₂ systems. The dilute hydrogen region is marked by a strong positive deviation from Sieverts' Law, and the relative partial molar enthalpy of solution becomes less exothermic as the hydrogen content is increased. ΔV? vs H/M relationships and ΔS_H vs H/M relationships indicate that hydrogen segregation at the metal surface or at abnormally stable trapping sites does not contribute significantly to the thermodynamic behavior exhibited by hydrogen in (C-15) TaV₂. Analysis of the excess free energy of hydrogen suggests that electronic effects may exert a significant influence on the behavior of hydrogen in (C-15) TaV₂, even at dilute hydrogen contents. It is suggested that the radom substitution of tantalum into the vanadium lattice exerts a significantly greater effect on the vibrational entropy of dissolved hydrogen than does the structural transformation b.c.c. TaV₂ → (C-15) TaV₂.     

Quantum transport in lattices of coupled electronic billiards

A new system with dynamic chaos—2D lattice of single Sinai billiards coupled through quantum dots—is studied experimentally. Localization in such a system was found to be substantially suppressed, because the characteristic size of the billiard for g≤1 (g is conductance measured in e ₂/h units) is the localization length rather than the de Broglie wavelength of an electron, as in the usual 2D electron system. Lattice ballistic effects (commensurate peaks in the magnetoresistance) for g?1, as well as extremely large magnetoresistance caused by the interference in chaotic electron trajectories, were found. Thus, this system is shown to be characterized by simultaneous existence of effects that are inherent in order (commensurate peaks of magnetoresistance), disorder (percolation charge transport), and chaos (weak localization in chaotic electron trajectories).     

Comparison of site-specific valence band densities of states determined from Auger spectra and XPS-determined valence band spectra in GeS (001) and GeSe (001)

Auger lineshapes of the Ge M₁M_4,5V and M₃M_4,5V and Se _M1M_4,5V transitions in GeS (001) and GeSe (001) are measured and compared to XPS valence band spectra. Distortions in both types of spectra due to inelastic scattering, analyzer and source broadening, and core level lifetime broadening are removed by deconvolution techniques. The valence band consists of three main peaks at ?2 eV, ?8 eV, and ?13 eV. There is excellent agreement of peak positions in AES and XPS spectra. The Auger lineshapes can be interpreted in terms of site-specific densities of states. They indicate that the states at ～?8 eV and at ～?13 eV are associated with the cation and anion sites respectively. The bonding p-like states at the top of the valence band have both cation and anion character. The Auger lineshapes indicate that the states closest to the valence band maximum are preferentially associated with Ge.     

Magnetism, magnetocaloric effect and positive magnetoresistance in Fe-doped antipervoskite compounds SnCMn3−xFex (x=0.05-0.20)

The effects of Fe substitution on the structure, magnetic properties, magnetocaloric effect and positive magnetoresistance (MR) effect in antipervoskite compounds SnCMn_3−xFe_x (x=0.05-0.20) have been investigated systematically. Partial substitution of Fe for Mn leads to the monotonic reduction in both the Curie temperature T_C and saturated magnetization (M_S). It can be attributed to the reduction of electronic density of state at the Fermi energy by Fe-doping. The maximum values of magnetic entropy change (−ΔS_M) and positive MR gradually decrease as x increases, due to the broadening of magnetic phase transition. The refrigerant capacity increases initially with x≤0.05, then decreases gradually as x increases further, which is suggested to originate from the competition between the decreasing −ΔS_M and broadening temperature span. Our result indicates that the chemical doping on Mn site is an effective method for manipulating the properties of antiperovskite compounds AXMn₃.     

Luminescence Microscopy of Single Quantum Dot Pairs with Nanometer Spatial Resolution

The transverse magnetoresistance of Ho_0.8Lu_0.2B₁₂ dodecaboride with a cage glass structure is studied at low (2–10 K) temperatures. It is demonstrated that the isotropic negative magnetoresistance in this antiferromagnet is dominant within the broad temperature range near T_N ≈ K. This contribution to the total magnetoresistance is due to the scattering of charge carriers by nanoclusters formed by Но³⁺ ions, and it can be scaled in the ρ = f(μ²_effH²/T² ) representation. It is found that the magnetoresistance anisotropy above (about 15% at 80 kOe) is due to the positive contribution, which achieves maximum values at the magnetic field direction close to H ║ [001]. The anisotropy of the charge carrier scattering is interpreted in terms of the cooperative dynamic Jahn?Teller effect at В12 clusters.