Raman scattering of neutron irradiated 6H-SiC

Confocal micro-Raman spectroscopy was preformed to investigate the structural damage of SiC neutron irradiated with the fluences of 1.72×10¹⁹ and 1.67×10²⁰ n/cm². In addition to characteristic peaks, several additional signals related to Si–Si, Si–C, and C–C vibration modes were monitored. The vibration mode associated with C_SiV _C complexes was identified to be the unambiguous peak at 575 cm^?1 which appears initially in the sample post-irradiation annealed at 800 °C. The defect-induced phonon confinement effect results in an asymmetric broadening with a low-frequency tail of the optical phonon peaks. The sigmoidal thermal recovery behavior of the optical phonon frequencies indicates that the reduction of FLO_0/6–FTO_2/6 splitting originates mainly from the isolated vacancies and interstitials.     

Raman scattering in hydrogenated amorphous silicon under high pressure

The first studies on the pressure dependences of the first-order Raman spectra in plasma-deposited a-Si:H films are reported. With increasing pressure up to 25 kbar the TO optical phonon band shows a shift in peak to higher frequencies with a sharpening of width while the TA acoustic phonon band shows a shift in peak to lower frequencies with a broadening of width. The LO optical phonon band shows a shift in peak to higher frequencies whereas the LA acoustic phonon band remains unchanged. These pressure effects are discussed with changes in force constant and structural disorder. The alloying effect of H atoms on the Raman spectra is also discussed while comparing the pressure effects.     

Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy

Hydrogenated amorphous silicon (a‐Si:H) films were studied using infrared and Raman spectroscopy. We have experimentally found that ratios of Raman scattering cross‐sections for Si–H to Si–Si bonds and for Si–H₂ to Si–Si bonds are equal to 0.65 ± 0.07 and 0.25 ± 0.03, respectively. It allows to measure the concentration of hydrogen in a‐Si:H films. The developed approach can be applied for in situ control of hydrogen in a‐Si:H films and also suitable for thin a‐Si:H films on substrates that are opaque in infrared spectral region. Copyright © 2013 John Wiley & Sons, Ltd.     

Raman scattering in amorphous boron

Raman scattering measurements have been performed at room temperature in thin film evaporated amorphous B and B_0.91C_0.09. The amorphous B spectrum indicates density of states features similar to those observed in infrared absorption as well as lower frequency scattering attributed to acoustic plus optic-like modes. The addition of C to amorphous B broadens the spectrum and shifts the lowest frequency peak to higher frequencies. A comparison of the amorphous B and broadened crystalline β-B Raman spectra indicates a number of similarities in peak frequencies that are consistent with similar short range order in both materials.     

Absorption measurements in neutron irradiated silicon

Silicon samples have been neutron irradiated at 76 °K with fluences sufficient to allow measurement of the 1.7 μ divacancy band at 76 °K. The growth of the divacancy concentration and the recovery of the edge absorption were studied as a function of annealing temperature between 76 °K and 550 °K. Immediately after irradiation the divacancy concentration is about 25 per cent of its maximum value which is attained at 330 °K, the temperature at which the divacancies begin to anneal out. Increases in the 1.7 μ band intensity and recovery of the edge absorption can also be achieved at 76 °K by illuminating the sample with intense sub-bandgap light or white light. The experimental results suggest a neutron-induced cluster model in which the cluster is a vacancy-rich region whose annealing characteristics are controlled by the liberation and motion of vacancies. The injection effects can be explained by analogy to the charge state dependent mobility of the Si vacancy.     

Raman scattering from gas-evaporated silicon small particles

Raman scattering measurements are reported on silicon small particles prepared by gas-evaporation technique. The crystalline structure is also observed for the sample having 70 A particles in average size. Four resolved component modes with Gaussian distribution function are identified with the three usual modes (LA, TO and allowed-TO) and a new surface mode. The surface mode of silicon particle, whose relative integrated intensity decrease with an increase of the particle size, is presented for the first time.     

Raman scattering by silicon

Reflection Raman spectroscopy has been performed on silicon at room temperature. One-phonon fine structure, which has been predicted by Cowley and observed in part by Wright et al., is fully obtained. Two-phonon structure is also obtained, which includes the most intense broad band observed by Parker et al. and weak broad bands not observed by them. One- and two-phonon structures reported here are very similar in shape to the ones predicted by Cowley by considering the anharmonicity of the lattice forces.     

Small angle neutron scattering from oxygen precipitates in silicon

The formation of silicon oxide precipitates from Czochralski grown silicon depends on the time and temperature of the heat treatment as well as on the initial content of interstitially dissolved oxygen. Samples containing between 5×10¹⁷ O_i/cm³ and 13×10¹⁷ O_i/cm³ have been heated at 750° C for 96 h. SiO₂ precipitates of various shape and size have been obtained and investigated by means of small angle neutron scattering (SANS) in the Q-range 0.05 Å^–1<Q<0.2 Å^–1. The obtained SANS patterns reveal a typical anisotropy of their intensity distribution, which splits into a central peak at Q<0.1 Å^–1 due to the shape of the individual particles and a number of weak intensities for large Q-values, originating from a correlation between defects, possibly between the precipitates. While these correlation peaks in the SANS patterns are seen best for rather low values of about (5–7)×10¹⁷ O_i/cm³ oxygen content, the central peak anisotropy is most pronounced for higher values of ca 10×10¹⁷ O_i/cm³. The integrated intensity of the central peak increases with increasing initial oxygen content. For comparison, untreated samples of the same initial oxygen content do not reveal any anisotropic SAN scattering or a broadened central peak beam.     

Raman scattering from small particle size polycrystalline silicon

Raman scattering measurements are reported on polycrystalline silicon films prepared in a hydrogen plasma at temperatures between 70 and 400°C. The spectra show several features which are correlated with X-ray diffraction measurements and assigned to crystalline and amorphous-like components.     

Efficient stimulated Raman scattering in silicon

Stimulated Raman scattering in silicon was investigated at liquid helium temperatures. A Q-switched single mode Nd: YAG laser was used to generate Stokes radiation at 1.127 μm. Time resolved measurements give a maximum power conversion efficiency of 20%. The effects of intensity induced losses are discussed.     

Resonant Raman scattering in amorphous bulk selenium

The resonant Raman spectrum of a-Se bulk has been observed in the low frequency region and in the range of the wavelength 5145ndash;6328 Å.The maximum of the resonance is centered at 5998 Å and shows a sharp peak at 31 cm^?1 Stokes shift, whose intensity varies with wavelength.The experimental data were interpreted, and related to the behaviour of the derivative of the dielectric function in the same material.     

Quantum interference in the Raman scattering from the silicon nanostructures

We report here microscopic process involved in the photo-excited Fano interaction due to nonlinear process in the silicon nanostructures. Photo-excited Raman line-shapes are investigated to reveal the presence of nonlinear Fano interaction in the silicon nanostructures for three different sizes. The Fano interaction is found to be more prominent due to the phase matching between electronic and phonon Raman scatterings for smaller sized nanostructures. Phase matching is achieved by nonlinear process of two-wave mixing in the silicon nanostructures followed by the formation of electron-phonon bound state.     

Anomalous polarization of Raman scattering spectra from porous silicon

A violation of the polarization selection rules for Raman scattering is observed in porous silicon. This effect is caused by a weak disorientation of the quasi-one-dimensional silicon wires, with the crystal structure of the wires themselves and the macroscopic homogeneity of the material in optical experiments remaining intact. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 95–100 (25 January 1998)     

Spontaneous Raman scattering in ultrasmall silicon waveguides

We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-microm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.     

Raman scattering in mosaic silicon carbide films

The Raman spectra of mosaic silicon carbide films grown on silicon substrates by solid-state epitaxy have been studied. The main polytypes forming the film material have been determined. It has been experimentally revealed that the properties of the silicon carbide film are changed after an aluminum nitride film is deposited on the former film. This has been interpreted as a manifestation of good damping properties of the SiC film when layers of other semiconductors are grown on it.