Point-contact spectroscopy on SmB6, TmSe,LaB6 and LaSe

We measured the dynamic resistance dU/dI (U) and its derivative d²U/dI²(U) of point contacts with intermediate valent SmB⁶ and TmSe and their integer valent reference compounds LaB₆ and LaSe at liquid helium temperatures. While dU/dI(U) for point contacts with LaB₆ and LaSe did not show any anomalous structures, for SmB₆ and TmSe a strong resistance peak at zero voltage was observed with a characteristic width of ～ 5 mV for SmB₆ and ～ 2.5 mV for TmSe.     

Lattice dynamics of Eu<Subscript>1-x</Subscript>Y<Subscript>x</Subscript>MnO<Subscript>3</Subscript> (0 ≤ x ≤ 0.5)

A systematic and detailed study of Raman and infrared active lattice excitations in the orthorhombic multiferroic manganite Eu_1−xY_xMnO₃ (0 ≤ x ≤ 0.5) was carried out at room temperature. For the infrared active phonon modes the eigenfrequencies, damping constants and oscillator strengths were analyzed by Fourier-Transform Infrared Spectroscopy in the far infrared frequency range. For the Raman active phonons the same analysis for eigenfrequencies and damping constants was carried out using Raman spectroscopy in the range from 200 cm⁻¹ to 700 cm⁻¹. Y doping leads to mode-dependent phonon frequency shifts up to 8%. These are interpreted in terms of the interplay between the decrease of the reduced ion masses and the axis-dependent change of bond lengths. The latter leads to a bond softening along the a-axis and a strengthening along the c-axis, for which the highest phonon frequency increase is observed. The application of both Raman and Infrared Spectroscopy gives us sensitivity not only to symmetry properties via the selection rules but also to the involvement of different ion types within the unit cell. It is clearly shown that the disorder induced effects are of minor impact on the lattice properties and solely detected on the rare earth sites. The MnO₆ octahedra remain unaffected and show the same behavior as in the stochiometric RMnO₃ making Eu_1−xY_xMnO₃ an excellent model system for a quasi-continuous fine-tuning of the lattice parameters relevant for the appearance of multiferroicity.     

Study of （Ga,Mn）N prepared by Mn-ion implantation using optical techniques

This paper reports that （Ga, Mn）N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraetion（XRD）. Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as EI（LO）, A1 （LO） and E~, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650 725, 363, 506cm^-1 and the vicinity of E~ mode. The modes observed at 182, 288, 650 725em 1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the （Ga, Mn）N, which are in fair agreement with the standard theoretical results.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

Superconductivity induced phonon anomalies in the Raman spectra of Zn and Ni doped YBa2Cu3O7

Here we present Raman spectra of YBa₂(Cu_1–x Zn _x )₃O₇ and YBa₂(Cu_1–x Ni _x )₃O₇ as a function of temperature and Zn or Ni content. The temperature dependence of two modes at 340 and 440 cm^–1 is analyzed. Similarly to the infrared measurements it is found that Zn substantially suppresses the superconductivity induced phonon softening whereas, Ni does not affect much that effect. Moreover, the superconductivity induced phonon stiffening of the 440 cm^–1 mode completely disappeared with the Zn doping. We find this behaviour might support the model where Zn acts effectively as a magnetic pair breaker.     

Raman spectroscopic study of carbon substitution in MgB2

We study the effect of carbon doping on the Raman spectrum of the MgB₂ superconductor. Out data show that significant changes in the Raman spectra of the MgB_2−xC_x compounds occur for carbon concentrations x>0.04. The E_2g mode at ∼580 cm⁻¹ hardens only moderately upon increased doping despite direct carbon substitution in the boron layers, while the dependence of its full width at half maximum (FWHM) on x reveals the competing effects of reduced electron-phonon coupling and increased disorder. The results are discussed in the framework of anisotropic lattice contraction and the position of the σ sub-bands with respect to the Fermi energy level. The relative intensity of the phonon peak at ∼770 cm⁻¹, associated with a peak in the phonon density of states, increases considerably and dominates for x=0.08. Additionally, it hardens and broadens with increasing x in the range 0.04-0.08. These changes can be associated with carbon substitution-induced disorder in the investigated samples.     

Acoustical phonon anomaly in the Raman spectra of intermediate valent TmSe1−xTex and TmxSe

In the Raman spectra of intermediate valent TmSe_1?xTe_x the same anomaly within the acoustical phonon band at 60 cm^?1 is found as in Tm_xSe. The connection of this anomaly with the valence mixing is confirmed. In a one-dimensional model calculation it is shown that a renormalized LA dispersion curve can produce the observed anomalous peak in the phonon DOS. As an alternative interpretation the possibility of a low energy electronic excitation at 60 cm^?1 is discussed.     

Thermionic emission properties of hexaborides

Thermionic emission properties of the single crystal hexaborides LaB₆, CeB₆, PrB₆, NdB₆, SmB₆, EuB₆, (La, Sr)B₆, (La, Ba)B₆, (La, Ce)B₆, (La, Pr)B₆, (La, Sm)B₆, and (La, Dy)B₆ are measured in the temperature range between 1250 and 1700°C. Of these, LaB₆ is shown to have the highest emission current density in the temperature range investigated. The LaB₆-based mixed hexaborides, (La, M)B₆, show current densities similar to LaB₆, but a little lower. Analyses by Auger electron spectroscopy indicate that the surface composition of (La, M)B₆ approaches that of LaB₆ at elevated temperatures and that the thickness of the surface layer whose composition is different from that of the bulk is typically several atomic layers. The formation of the surface layer is considered to be caused by a relatively slow evaporation rate of La compared to that of the other metal.     

Bi-induced vibrational modes in GaAsBi

We have studied GaAs_1−xBi_x (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm⁻¹ and 214 cm⁻¹ with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm⁻¹ is identified as originating from substitutional Bi at the As site in GaAsBi.     

Studies on the complex behavior of optical phonon modes in wurtzite (ZnO)1−x (Cr2O3) x

This paper reports on the use of phonon spectra obtained with laser Raman spectroscopy for the uncertainty concerned to the optical phonon modes in pure and composite ZnO_1?x (Cr₂O₃) _x . Particularly, in previous literature, the two modes at 514 and 640 cm^?1 have been assigned to ZnO are not found for pure ZnO in our present study. The systems investigated for the typical behavior of phonon modes with 442 nm as excitation wavelength are the representative semiconductor (ZnO)_1?x (Cr₂O₃) _x (x = 0, 5, 10 and 15 %). Room temperature Raman spectroscopy has been demonstrated polycrystalline wurtzite structure of ZnO with no structural transition from wurtzite to cubic with Cr₂O₃. The incorporation of Cr³⁺ at most likely on the Zn sub-lattice sites is confirmed. The uncertainty of complex phonon bands is explained by disorder-activated Raman scattering due to the relaxation of Raman selection rules produced by the breakdown of translational symmetry of the crystal lattice and dopant material. The energy of the E ₂ (high) peak located at energy 53.90 meV (435 cm^?1) due to phonon–phonon anharmonic interaction increases to 54.55 meV (441 cm^?1). A clear picture of the dopant-induced phonon modes along with the B ₁ silent mode of ZnO is presented and has been explained explicitly. Moreover, anharmonic line width and effect of dislocation density on these phonon modes have also been illustrated for the system. The study will have a significant impact on the application where thermal conductivity and electrical properties of the materials are more pronounced.     

Optic phonon anomalies and f-d hybridization in SmS and SmB6

The optic phonons of semiconducting SmS and of (homogeneously) mixed-valent SmS and SmB₆ have been investigated by means of Raman scattering. The dominant electron - phonon interaction upon resonantly exciting the 4f shell is revealed as a coupling of the strongly localized 4f hole at the Sm site to full symmetric (A_{j g}) displacements of the nearest neighbour anions i.e. mainly to LO(L) phonons. Semiconducting and mixed-valent, metallic SmS show a “softening” of the LO(L) phonon frequencies with respect to the other divalent and trivalent rare earth sulfides, respectively, going in parallel with a “softening” of the bulk modulus. The f-d hybridization is considered as the common origin of these phonon frequency renormalizations.     

Raman scattering in TlInS2xSe2(1−x) layered mixed crystals (0.25≤x≤1): Compositional dependence of the mode frequencies and line widths

The Raman spectra of TlInS_2xSe_2(1−x) layered mixed crystals were studied for a wide composition range (0.25≤x≤1) in the frequency region 10-360 cm⁻¹ at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported.     

Raman spectroscopic study of ceramic Sr2Bi4Ti5O18

Raman spectra of ceramic Sr2Bi4Ti5O18 （SBTi5） are reported to consist of four different Raman bands. Temperature-dependent spectra reveal the relationship between the lattice vibration and the material＇s structure. There appears a relatively large change in structure of the material at about 273K, The anharmonic potential of the material has a great influence on its phonon mode full width at half maximum （FWHM）, which can be expressed by a function of temperature. Theoretical fittings of the FWHMs for the two modes at around 312 cm^-1 and 464cm^-1 indicate that the latter phonon mode is more anharmonic than the former one.     

The effects of incommensurability on the phonon modes in the one-dimensional superionic conductor K-hollandite

Polarized Raman and infrared spectra of the one dimensional (1-D) superionic conductor (K_2xMg_xTi(_8?x)O₁₆; x = 0.77) have been measured over the phonon frequency region 10–1000 cm^?1 as a function of temperature and pressure. The majority of the IR and Raman active modes predicted by group theory for the (Ti, Mg)O₆ framework were observed. The frequencies and their IR and Raman scattering cross-sections for the incommensurate lattice of K⁺ ions were calculated using a one dimensional linear chain model. This model assumes Coulomb interaction between nearest neighbors that are located in a sinusoidal potential due to the framework lattice. Several broad Raman bands were attributed to amplitudon type modes from the one dimensional incommensurate K⁺ ion sublattice. The IR active phason modes could not be identified unambiguously due to the underlying TiO framework vibrations which are known to possess large anharmonicity and oscillator strenghts.     

Raman scattering on intermediate valent TmSe

Defect induced first order resonance Raman spectra have been measured on cleaved single crystals of intermediate valent Tm_xSe, where the Tm to Se ratio x varied between 0.87 and 1.05. A softening of the zone boundary LO phonons linear in the degree of valence mixing was observed. On polished samples an additional scattering peak at 60 cm^-1 was found. Its intensity varies with stoichiometry concomitant with the degree of valence mixing and it disappears in the trivalent Tm³⁺_0.87Se.     

Temperature‐dependent Raman scattering studies of the geometrically frustrated pyrochlores Dy2Ti2O7, Gd2Ti2O7 and Er2Ti2O7

The temperature‐dependent Raman studies of A₂Ti₂O₇(A = Dy, Er, Gd) were performed on single crystals and polycrystalline samples in the 4.2–295 K temperature range. The Raman spectra showed softening of the majority of phonon modes upon cooling in the whole temperature range studied and large decrease of linewidths. These changes have been analyzed in terms of strong third‐order phonon–phonon anharmonic interactions. Moreover, the 312 and 330 cm⁻¹ modes of Er₂Ti₂O₇(Gd₂Ti₂O₇) showed hardening upon cooling down to about 130 K (100 K) and then anomalous softening below this temperature. The observed anomalous behavior of the Raman modes indicates that some important changes occur in these materials at low temperatures. However, the origin of this behavior is still not clear. Copyright © 2008 John Wiley & Sons, Ltd.     

Raman scattering in stage 1 europium intercalated graphite

The Raman spectrum of stage 1 europium intercalated graphite, EuC₆, has been recorded at room temperature. EuC₆ has a p(√3 × √3)R30° in-plane superlattice structure, the same as that of LiC₆. The c-axis stacking sequences of EuC₆ and LiC₆ are different. The Raman spectrum of EuC₆ exhibits a broad asymmetric Fano resonance peak at 1500 ± 5 cm^-1, similar to that observed in MC₈ (M = K, RbandCs). However, there is no evidence of any spectral feature around 580 cm^-1 as what has been observed in MC₈. Considering the Raman features of various graphite intercalation compounds in light of their superlattice structures, we suggest that: (1) The feature around 580 cm^-1 is a characteristic associated only with the MC₈p(2 × 2)R0° in-plane superlattice structure. It should originate from the M point phonons of pristine graphite, which become Raman active as predicted by phonon band structure calculations. (2) The continuous background in the spectra of EuC₆ and MC₈, which results in the Fano resonance peak at 1500 cm^-1, is associated with the staggered stacking sequence. Stacking faults are easy to occur in crystals with staggered stacking sequences, but not in crystals with complete elliptical sequences. Therefore, a disorder induced continuum is observed in the Raman spectra of EuC₆ and MC₈, but not in that of LiC₆.     

Vibrational Raman spectra of CdSx Se1‐x magic‐size nanocrystals

Resonant Raman scattering spectra of ultrasmall (<2 nm) magic‐size nanocrystals (NCs) are reported. The spectra of CdS and CdS_x Se_1‐x NCs, resonantly excited with 325 nm and 442 nm laser lines, correspondingly, reveal broad features in the range of bulk optical phonons. The relatively large width, ～50 cm^‐1, and downward shift, ～20 cm^‐1, of the Raman bands with respect to the longitudinal optical phonon in bulk crystals and large NCs are discussed based on the breaking of the translational symmetry and bond distortion in these ultrasmall NCs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Doping effect on the phase transition temperature in ferroelectric SrBi2−xNdxNb2O9 layer‐structured ceramics: a micro‐Raman scattering study

The temperature dependence of Raman spectra for SrBi_2−xNd_xNb₂O₉ ceramics (x from 0 to 0.2) has been studied in a wide temperature range from 80 to 873 K. It is found that the peak position of the A_1g[Nb] phonon mode at 207 cm^–1, which is directly associated with the distortion of NbO₆ octahedron, decreases with increasing Nd composition, while the A_1g[O] phonon mode at 835 cm^–1 increases. Moreover, both the peak position and intensity of the A_1g[Nb] phonon mode reveal strong anomalies around the ferroelectric to paraelectric phase transition temperature. It indicates that the phase transition temperature decreases from about 710 to 550 K with increasing Nd composition, which is due to the fact that the introduction of Nd ions in the Bi₂O₂ layers reduces the distortion extent of NbO₆ octahedron. Copyright © 2011 John Wiley & Sons, Ltd.     

Electronic Raman scattering and the electron–phonon interaction in YB6

Electronic Raman scattering in YB₆ and in its structural and electronic analog LaB₆ has been studied in the temperature range of 10–730 K. The experimental spectra have been compared to those calculated on the basis of ab initio band structures with renormalization owing to the electron–phonon interaction. Good agreement between the calculation and experiment for LaB₆ has been obtained throughout the entire temperature range. This allows the determination of the coupling constant λ _ep = 0.25. To satisfactorily describe the spectra of electronic light scattering in YB₆, it is necessary to introduce an additional electron relaxation channel. In this case, the estimate of the electron–phonon coupling constant λ _ep is no more than 0.4; for this reason, a high superconducting transition temperature cannot be explained only by the phonon mechanism.