Suppression of the spin-glass state by indirect exchange via charge carriers in spinellides xCuCr2Se4-(1−x)Cu0.5Me0.5Cr2Se4 (Me = Ga,In)

Spin glass (SG) is observed in semiconducting solid solutions xCuCr₂Se₄-(1?x)Cu_0.5Me_0.5Cr₂Se₄ (Me = In, Ga) for 0?x?0.1. For x0.1 the material exhibits p-type metal conductivity. For x?0.6 the magnetic properties are purely ferromagnetic (FM), while for 0.1 <x?0.2 an unusual mixed two-phase SG+FM state is found. Indirect exchange via charge carriers is assumed to be responsible for SG suppression.     

Negative magnetoresistance and nonlinear conduction in Ti0.99V0.01Se2

Both magnetic and electric field dependences of transport coefficients are investigated on the layered material Ti_1-xV_xSe₂ (x = 0.01). In contrast to semimetallic TiSe₂, the resistivity of the V-doped samples increases with decrease of temperature even in the low temperature region. At liquid helium temperatures it is found that the resistivity is strongly dependent on electric field strength. The behaviour of the nonlinear conduction is similar to that observed in 1T-TaS₂. In the low field (Ohmic) region anomalously large negative mangetoresistance is observed, Δ?/?₀ = -80% at 1.6 K and 60 KOe. Moreover the Hall coefficient is also found to depend on both magnetic and electric fields. All the experimental data suggests that mobile carriers are excited by the applied fields.     

Urbach tails and the structure of chalcogenide glasses

A novel analysis of optical absorption tails of inorganic network glasses is shown to provide important information on the structure of the glass. The anomalous composition and temperature dependence of absorption tails in Ge_xSe_1?x and As_xSe_1?x systems indicate that these glasses retain locally layered structures at particular stoichiometries corresponding to GeSe₂ and As₂Se₃, and a reversible structural change is taking place well below the glass transition temperature. A phenomenological model for the absorption tail slope of glasses is proposed, analogous to the Urbach rule for crystalline materials.     

Effect of bond polarity in Sb2Te3−x Se x single crystals

Sb₂Te_3?x Se _x (x=0·00?1·25) single crystals were prepared from 5N purity elements using a modified Bridgman method. Measurements of the reflectivity spectra in the plasma resonance frequency range, Hall constantR _H(B∥c) and electrical conductivityσ _⊥C were carried out on these samples at room temperature. With increasing selenium content a shift of the reflectivity minimum towards longer wavelengths was observed as well as an increase of the Hall constant and a decrease of the electrical conductivity — the incorporation of Se atoms into the Sb₂Te₃ crystal lattice results obviously in a decrease in the concentration of free carriers. This effect is accounted for by a change in the polarity of bonds in the Sb₂Te₃ crystal lattice, due to the formation of Se _Te ^x substitutional defects.     

Electrical resistivity and the phase transition temperatures of Ti1−xHfxSe2 mixed crystals

The onset temperature of the superlattice T_c developed in the mixed system Ti_1-xHf_xSe₂ is determined from measurements of the electrical resistivity. As x is increased, the onset temperature T_c reaches the maximum around x?0.07 before the superlattice formation is completely suppressed around x?0.35. The functional dependence of T_c(x) can be interpreted by considering TiSe₂ as an excitonic insulator.     

New ferrimagnetic spinel compositions in the system MCr2S4−xSex where M=Fe,Co, Mn

Phase relationship between ferrimagnetic semiconducting spinels of the type MCr₂S₄ and defect NiAs compositions of the type MCr₂Se₄ (where M=Mn, Fe, Co) are established. It was found that the amount of Se which can be substituted, with retention of the spinel structure, decreases from MnCr₂S_4?xSe_x (x=0 to x=2) to FeCr₂S_4?xSe_x (x=0 to x=1·25) to CoCr₂S_4?xSe_x (x=0 to x=1). This phenomena is accounted for on the basis of sulfide spinel stability and unit cell size. The Curie temperatures of the spinel compositions decrease slowly with increasing Se content. This is presumably caused by weakening of the spinel A-B superexchange interaction.     

Characterization of CdS1−xSex thin films by chemical bath deposition technique

The cadmium sulfo selenide CdS_1?xSe_x thin films were chemical bath deposited in aqueous media onto coated glass substrates. As-deposited CdS_1?xSe_x thin films were annealed at 350 °C in air for 30 min. The structural, morphological, compositional and optical properties of deposited CdS_1?xSe_x thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), Energy dispersive analysis by X-ray (EDAX), and UV-Vis-NIR spectrophotometer respectively. X-ray diffraction patterns of CdS_1?xSe_x thin films reveal the polycrystalline nature and hexagonal structure. The microstructural parameters such as crystallite size (D), micro strain (?), and dislocation density were calculated and found to depend on compositions. The surface morphology and grain size are found to be influenced with the annealing temperature. The presence of Cd, S and Se of the CdS_1?xSe_x thin films and the composition of CdS_1?xSe_x thin film are estimated by EDAX analysis. The optical transmittance and absorption spectra were recorded in the range 400–2500 nm. The band gap of the CdS_1?xSe_x thin films is found to decrease from 2.5 eV to 1.75 eV.     

Far-infrared spectroscopy of CdTe1−xSex(In): Phonon properties

The far-infrared reflectivity spectra of CdTe_0.97Se_0.03 and CdTe_0.97Se_0.03(In) single crystals were measured at different temperatures. The analysis of the far-infrared spectra was carried out by a fitting procedure based on the dielectric function which includes spatial distribution of free carriers as well as their influence on the plasmon–phonon interaction. We found that the long wavelength optical phonon modes of CdTe_1−xSe_x mixed crystals exhibit a two-mode behavior. The local In mode at about 160 cm⁻¹ is observed. In both sample, a surface layer with a low concentration of free carriers (depleted region) are formed.     

Thermopower and transport mechanism of the La2−xSrxCu0.94Ti0.06O4 system

The thermal properties and their relationship to the charge transport properties of the La_2?xSr_xCu_0.94Ti_0.06O₄ solid solution series have been investigated by means of electric resistivity and thermopower measurements. The different changes of the broad peak in S–T curves for Sr-doped samples were observed, which may result from the itinerant hole carriers. The transport mechanism of La_2?xSr_xCu_0.94Ti_0.06O₄ is mainly dominated by the small-polaron hopping due to the discrepancy in the activation energy derived from the resistivity and the thermoelectric power. The small polarons are not originated from the magnetic coupling between magnetic ions and hole spins, but from the coupling between the phonon with a breathing mode and the hole carriers.     

The electron trap associated with an anion vacancy in ZnSe and ZnSxSe1−x

A dominant electron trap in ZnSe and ZnS_xSe_1?x has been studied by DLTS. The trap depth of about 0.3 eV is independent of the crystal growth, doped impurities and S mole fraction x in ZnS_xSe_1?x, while the electron-capture cross-section decreases with x. These properties indicate that the electron trap is due to the anion vacancy in ZnSe and ZnS_xSe_1?x.     

X-ray diffraction and optical studies of CdS1−x Sex solid solutions with stacking faults

The existence in CdS_1?x Se_x crystals (with x=0.10–0.50) of crystalline regions with stacking faults (SF) was first demonstrated by x-ray diffraction and optical methods. X-ray diffraction studies showed SF to be present in all the samples investigated, but in different concentrations. The effect of SF present in CdS_1?x Se_x solid solutions of different compositions on their exciton reflectance and photoluminescence (PL) spectra has been studied. Crystals with high SF concentrations were found to exhibit new exciton bands, which are manifested in reflectance and PL spectra. In the CdS_1?x Se_x phase with SF, resonant emission due to free excitons and the corresponding phonon replicas have been observed. The effect of reabsorption, which can bring about a change in the zero-phonon emission line shape (doublet formation), as well as affect the intensity ratios of the zero-phonon line to the phonon replicas, has been analyzed. It is pointed out that the variation with temperature of the shape of the SF-induced PL exciton line indicates its complex structure, with the constituents of this structure varying in intensity with increasing temperature.     

Synthesis of Zr-doped TiO2 templated from cloth and its photocatalytic activity

Biomorphic Zr-doped TiO₂ (Zr _x Ti_{1 ? x} O₂) with hierarchical micro- and nanostructures was successfully fabricated using cloth as the host template. We found that the resulting Zr _x Ti_{1 ? x} O₂ faithfully duplicated the morphologic microstructures of the initial cloth with grain size of about 10–50 nm. The photocatalytic activity of the as-prepared Zr _x Ti_{1 ? x} O₂ was examined by the degradation of rhodamine B in aqueous solution under simulated solar light, which showed that templates pretreated with NaOH solution followed by mixed acid and an appropriate amount of doped Zr (3 mol%) could significantly enhance the photocatalytic activities of Zr _x Ti_{1 ? x} O₂. This simple template method provides a cost-effective and ecofriendly route to synthesize other metal-doped semiconductor materials of predicted morphology.     

A2B6 electric-discharge semiconductor focon laser

The working principle of the electric-discharge semiconductor focon laser is considered. CdS, Cd _x Zn_1?x Se, and CdS _x Se_1?x plates were used as active medium. In the case of CdS, lasing at λ = 525 nm was observed. The radiation power reached 3 kW, the pulse duration being 3 ns. The conditions of generation initiation in the streamer regime are considered. The spectral characteristics of discharge channel radiation in Cd _x Zn_1?x Se and CdS _x Se_1?x plates are investigated. The spectrum is shown to consist of discrete lines occurring upon discharge propagation and corresponding to the change in the composition of the ternary compound obtained in the course of single crystal growth. The application of ternary solid solutions A2B6 is supposed to help in obtaining a successive laser pulse generation within the range of 480 to 700 nm.     

Sonochemical preparation of SbS1−xSexI nanowires

A sonochemical method for direct preparation of nanowires of SbS_1?xSe_xI solid solution has been established. The SbS_1?xSe_xI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm²) at 50 °C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10–50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS_1?xSe_xI nanowires.     

Stoichiometry,electrical properties,and electronic structure of Cr1.70Nb2.30Se10

Both powder and single-crystal X-ray investigations show that Cr_{1 + x}Nb_3?xSe₁₀ which belongs to the FeNb₃Se structure type, exists only in a narrow range of stoichiometry close to x=0.70. In contrast to the Fe analog, Cr_1.70Nb_2.30Se₁₀ undergoes no disticnt metal-insulator transition; the resistivity and the thermoelectric power remain of the same order as the temperature is lowered from 300 K to 4.2 K. The thermoelectric powers S of Fe_{1 + x}Nb_3?xSe₁₀ (0.25<x<0.40) and FeVNb₂Se₁₀, however, follow such a temperature T dependence as $\text{S∝}\text{1}\text{T}$ even at room temperature. On the basis of light-binding band calculations, these observations are interpreted in terms of the contribution of Cr or Fe d-orbitals to electron conduction.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Magnetic properties of CuInSe2-(FeSe)2 solid solutions

Measurements of the magnetic characteristics of Cu_{1 ? x} In_{1 ? x} Fe_2x Se₂ solid solutions and their approximation by Langevin and Curie equations show that the properties observed in samples are the result of antiferromagnetic clusters in which magnetic moments fall to ～0.8 μ_B/atom as x rises, confirming that the antiferromagnetic interaction in the samples grows stronger.     

Morphology of the stabilized natural faces of a CdS1−x Sex solid solution

The morphology of the stabilized surfaces of CdS_1?x Se_x crystals exposed to air at room temperature is studied by atomic force microscopy. The characteristic features of the relief of the natural faces of these crystals are described, and the causes of the appearance of these features are discussed. The morphological results are related to the results of the microcathodoluminescence study of surface micro-and nanostructures. This study revealed objects that contribute to exciton emission and, hence, are CdS_1?x Se_x solid solutions.     

Electronic structure of new iron-based superconductors: From pnictides to chalcogenides and other similar systems

The electronic spectra of new iron-based high-temperature superconductors and a number of other chemically similar compounds have been discussed and compared with the focus on iron chalcogenide K_{1 ? x} Fe_{2 ? y} Se₂ and isostructural pnictide BaFe₂As₂ (122). It has been shown that the Fermi surfaces in K_{1 ? x} Fe_{2 ? y} Se₂ are significantly different from those in pnictides. The LDA + DMFT and LDA’ + DMFT calculations have demonstrated that the effect of electron correlations in K_{1 ? x} Fe_{2 ? y} Se₂ on the electronic structure is much stronger than that in the most studied 122 system. The electronic structure of several multiband superconductors similar in chemical composition to iron-based high-temperature superconductors, but having a relatively low T _c value (such as SrPt₂As₂, APt₃P (A = Sr, Ca, La), and (Sr, Ca)Pd₂As₂), and the non-superconducting compound BaFe₂Se₃ has also been discussed. It has been shown that the electronic structure of these systems is significantly different from previously studied iron pnictides and chalcogenides. The T _c value in these systems can be understood within the simple Bardeen-Cooper-Schrieffer model.     

Local atomic structure of Cu(In x Ga1−x )Se2 (x = 0.25, 0.5, and 0.75) systems for solar cells

The local atomic structure of thin surface layers of crystalline quasi-binary Cu(In _x Ga_1?x )Se₂ solid solutions was studied by SIMS and EXAFS techniques. The SIMS method showed that the elemental composition of the sample changes most significantly in thin layers at a depth of 5–10 nm; in deeper layers, the component concentrations correspond to the bulk values. The EXAFS method in the x-ray fluorescence mode showed that the results obtained are in agreement with the assumption that quaternary crystalline quasi-binary Cu(In _x Ga_1?x )Se₂ solid solutions exhibit local disorder while average long-range order is detected from x-ray diffraction data.