锂离子电池正极材料LiNi_(1/3)Co_(1/3)Mn_(1/3)O_2的合成及性能研究

采用辐照凝胶法制备了锂离子电池正极用LiNi1/3Co1/3Mn1/3O2粉体材料。采用XRD、SEM和电化学充放电测试对制备材料的结构和性能进行了表征。结果表明:900℃制得的样品具有较好的层状结构,结晶性适中,电化学性能优异:其首次放电容量高达184mA·h/g(2.80～4.50V,C/10),30次循环后的容量保持率为87.4%,表现出较好的充放电容量和循环性能,较之850,950℃煅烧样品具有最小的交流阻抗和直流阻抗。     

Si~(4+)掺杂对BaZr(BO_3)_2:Eu荧光粉能量传递的影响

采用高温固相法合成了Si4+掺杂的BaZr(BO3)2:Eu红色发光荧光粉。激发光谱表明,不同Si4+掺杂浓度明显使电荷迁移态(CTS)向高能量的位置移动,且改善了样品的发光强度。分析认为,这是由于Si4+的电负性大于所取代的Zr4+,且Si4+的进入影响了Eu3+的配位数,提高了CTS向发光中心的能量传递几率。依据Judd-Ofelt理论计算的强度参数表明,随着Si4+掺杂浓度的增加,Eu3+所处格位的对称性明显降低,增大了Eu3+的跃迁几率,从而改善了发光强度。计算Eu3+间的能量传递几率发现,在掺杂浓度为5%时,Eu3+间的能量传递几率很小,其对荧光粉的发光影响不大。     

IWO缓冲层对MOCVD-ZnO:B薄膜性能的影响研究

金属有机化学气相沉积(MOCVD)技术生长的绒面ZnO透明导电(ZnO-TCO)薄膜应用于Si基薄膜太阳电池上能够形成"陷光结构",以提高薄膜太阳电池效率和稳定性。本文将电子束反应蒸发技术生长的掺W的In2O3(In2O3:W,(IWO)薄膜作为缓冲层,应用于MOCVD-ZnO:B薄膜与玻璃之间,可促进ZnO:B薄膜的生长,并且有效提升薄膜的光散射特性。当IWO缓冲层厚度为20nm时,获得的IWO/ZnO:B薄膜的电阻率为2.07×10-3Ω.cm,迁移率为20.9cm2.V-1.s-1,载流子浓度为1.44×1020 cm-3;同时,薄膜具有的透过率大于85%,且在550nm处绒度较ZnO:B薄膜提高了约9.5%,在800nm处绒度较ZnO:B薄膜提高了约4.5%。     

Eu~(3+),Tb~(3+)共掺杂NaY(MoO_4)_2材料的制备及发光性能研究

采用水热法制备出NaY(MoO4)2:Eu3+,Tb3+下转换发光材料。通过X射线粉末衍射、红外光谱、荧光激发和发射光谱对其进行表征。讨论了不同反应温度及Eu3+掺杂浓度对NaY(MoO4)2:Eu3+,Tb3+的晶体结构和发光性能的影响,得到水热温度为180℃及Eu3+浓度为摩尔分数0.7%时,样品具有最佳的发光效果。在395nm光激发下,观察到了591nm处橙光发射峰以及616nm处强红光发射峰,分别对应于Eu3+的5D0→7F1和5D0→7F2跃迁。并研究了NaY(MoO4)2:Eu3+,Tb3+材料中Tb3+对Eu3+的敏化作用及能量传递过程。     

Nd~(3 ):YAG激光照射离体子宫组织的温度变化及病理研究

以不同功率Nd3 ：YAG激光辐射不同厚度子宫组织粘膜面5秒钟，测量子宫组织浆膜面的温度变化，然后投入福尔马林液中，进行粘膜病理检查。结果显示，46～50W准接触辐射治疗子宫内膜疾病较为理想。     

脉冲激光沉积Er:LiNbO3薄膜及1.54μm光致发光的研究

利用脉冲激光沉积(PLD)技术,通过双靶(Er₃O₂/LiNbO₃)交替与脉冲激光作用,在SiO ₂/Si 衬底上制备了c-轴择优取向的Er掺杂LiNbO₃(Er:LiNbO₃)薄 膜。用X射线衍射(XRD)、 场发射扫描电子显微镜(FESEM)、台阶仪及光致发光(PL)光 谱对制备的掺杂薄膜进行了表征。研究了衬底温度、O₂压及沉积时间对Er:LiNbO₃薄膜 结晶、表面形貌及 PL性能的影响。结果发现,衬底温度低于300℃时制备的Er:LiNbO 3薄膜为非晶膜,随衬底温度升高,薄膜出 现(006)衍射峰,并且其强度随衬底温度升高而增大;O₂压变化对 利用双靶沉积获得的Er:LiNbO₃薄膜择优 取向及(006)衍射峰强度影响不明显;沉积时间越长Er:LiNbO₃薄膜 中Er³⁺浓度越大,但结晶择优取向 变差;利用532nm波长激光泵浦,室温下,在1537nm波长处测得很强的光致荧光峰,而且沉积时间越长谱峰越尖锐强 度越大。     

复合助烧剂对0.4CaTiO3-0.6(Li1/2Nd1/2)TiO3陶瓷的低温烧结及性能的影响

采用传统的固相反应法制备了0.4CaTiO3.0.6(Li1/2Nd1/2)TiO3(CLNT)微波介质陶瓷,研究了复合添加BaCu(B2O5)(BCB)和2ZnO-B2O3(ZB)玻璃对CLNT陶瓷的烧结特性、相组成、微观形貌及介电性能的影响.结果表明:复合添加质量分数3%的ZB玻璃和5%的BCB能使CLNT陶瓷的烧...     

Vapor Transport Deposition of Highly Efficient Sb2(S,Se)3 Solar Cells via Controllable Orientation Growth

The vapor transport deposition of quasi-one-dimensional antimony selenosulfide (Sb₂(S,Se)₃) has recently attracted increasing research interest for the inexpensive, high-throughput production of thin film photovoltaic devices. Further improvements in Sb₂(S,Se)₃ solar cell performance urgently require the identification of processing strategies to control the orientation, however the growth mechanism of high quality absorbers is still not completely clear. Herein, a facile and general vapor transport deposition approach to precisely control the growth of large-grained dense Sb₂(S,Se)₃ films with good crystallization and preferred orientation via the source vapor speed is utilized. It is found that defect activation energy rather than the defect concentration plays a decisive role in the Sb₂(S,Se)₃ photovoltaic performance. Admittance spectroscopy analysis is used to obtain efficient Sb₂(S,Se)₃ solar cells. By employing dual-source coordinations to optimize the absorber layer a power conversion efficiency of 8.17% is obtained which is the highest efficiency for Sb₂(S,Se)₃ solar cells fabricated by vapor transport technology. This study suggests that there are other opportunities for gaining deeper a understanding of the defect physics and carrier recombination mechanisms in other highly oriented low-dimensional materials to achieve improved device performance.     

Efficient Polymer Solar Cells Based on Poly(3‐hexylthiophene):Indene‐C70 Bisadduct with a MoO3 Buffer Layer

Polymer solar cells (PSCs) with poly(3‐hexylthiophene) (P3HT) as a donor, an indene‐C₇₀ bisadduct (IC₇₀BA) as an acceptor, a layer of indium tin oxide modified by MoO₃ as a positive electrode, and Ca/Al as a negative electrode are presented. The photovoltaic performance of the PSCs was optimized by controlling spin‐coating time (solvent annealing time) and thermal annealing, and the effect of the spin‐coating times on absorption spectra, X‐ray diffraction patterns, and transmission electron microscopy images of P3HT/IC₇₀BA blend films were systematically investigated. Optimized PSCs were obtained from P3HT/IC₇₀BA (1:1, w/w), which exhibited a high power conversion efficiency of 6.68%. The excellent performance of the PSCs is attributed to the higher crystallinity of P3HT and better a donor–acceptor interpenetrating network of the active layer prepared under the optimized conditions. In addition, PSCs with a poly(3,4‐ethylenedioxy‐thiophene):poly(styrenesulfonate) (PEDOT:PSS) buffer layer under the same optimized conditions showed a PCE of 6.20%. The results indicate that the MoO₃ buffer layer in the PSCs based on P3HT/IC₇₀BA is superior to that of the PEDOT:PSS buffer layer, not only showing a higher device stability but also resulting in a better photovoltaic performance of the PSCs.     

非线性光学晶体MMTWMP的热学和光学性质的测定

报道了一种新型非线性光学晶体：二水合二N-甲基-(-吡咯烷酮合硫氰酸汞锰(MMTWMP)。用热重分析法、差示扫描量热法、吸光光度法、红外和粉末衍射光谱研究了它的热学和光学性质。它属于四方晶系，晶胞参数为α-1．21294，C=0．822.38nm，V=1．21127nm^3。MMTFMP晶体具有较好的物理化学稳定性。它的紫外截止波长为360nm。比硫氰酸汞锰，MnHg(SCN)4(MMTC)紫移了13nm。它在404nm的透过率为44．82％，比MMTC高了17．46％。     

反应溅射法制备掺硼的a—Si:H(B)薄膜的ESR研究

我们应用反应溅射法制备了掺硼的a-Si:H薄膜和a-SiB:H合金薄膜。掺硼浓度(Y_g=[B_2H_6]/([Ar]十[H_2]))由10~(-6)到10~(-2)变化。研究发现,ESR信号为g_1=2.0051和g_2=2.0096两部分的叠加,前者代表Si的悬挂键Si_3~0信号,后者是由于掺B而引起的自旋信号。随着Y_g的增大,g_2由2.0090变化到2.0096,其峰一峰宽度△H_(2??)由20.5G展宽到26.0G;而g_1值和其△H_(1??)没有明显的变化。Y_g增大,两种缺陷态密度都有所增大,但g_1信号代表的B致缺陷态密度增加较快。在重掺B(Y_g≥10~(-2))的情况下,材料的性质与上述行为截然不同,出现了合金效应     

Molecular Beam Epitaxy Deposition of In Situ O-Doped CdS Films for Highly Efficient Sb2(S,Se)3 Solar Cells

Antimony selenosulfide (Sb₂(S,Se)₃) is considered as a promising light-harvesting material and has been widely used in solar cells. For high-efficiency Sb₂(S,Se)₃ solar cells, the most commonly used electron-transporting layer of cadmium sulfide (CdS) is generally prepared by chemical bath deposition (CBD) approach. However, the hazardous waste liquid from the chemical bath and the sensitivity of the deposition process to the environment are challenges to practical applications. Herein, a molecular beam epitaxy deposition is reported to prepare CdS films, overcoming the drawbacks of CBD process. Furthermore, through introducing oxygen during the deposition of CdS, the sulfur vacancy defects generated in the vacuum deposition process are suppressed. The performance of Sb₂(S,Se)₃ solar cells is accordingly improved significantly. This improvement is attributed to the following aspects: i) the improved optical transmittance of CdS films. ii) The enhanced [hk1] orientation of Sb₂(S,Se)₃ absorber layer. iii) The improved heterojunction quality and suppressed carrier recombination. As a result, a power conversion efficiency of 8.59% for Sb₂(S,Se)₃ solar cells is achieved. This study provides a novel strategy for preparing electron-transporting layers for efficient chalcogenide thin-film solar cells and sheds new light on large-area solar cell applications.     

Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin‐Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

This study reports the development of copper(I) thiocyanate (CuSCN) hole‐transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n‐alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin‐cast in air and annealed at 100 °C. X‐ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high‐resolution valence band spectra agree with first‐principles calculations. Study of the hole‐transport properties using field‐effect transistor measurements reveals that the aqueous‐processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm² V^?1 s^?1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous‐processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous‐processed CuSCN‐based cells consistently outperform devices based on poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous‐based synthetic route that is compatible with high‐throughput manufacturing and paves the way for further developments.