基于Si掺杂Sb2Te3薄膜的相变存储器研究

采用磁控三靶(Si，Sb及Te)共溅射法制备了Si掺杂Sb₂Te₃薄膜，作为对比，制备了Ge₂Sb₂Te₅和Sb₂Te₃薄膜，并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明，Si掺杂提高了Sb₂Te₃薄膜的晶化温度以及薄膜的晶态和非晶态电阻率，使得其非晶态与晶态电阻率之比达到10⁶，提高了器件的电阻开/关比；同Ge₂Sb₂Te₅薄膜相比，16at% Si掺杂Sb₂Te₃薄膜具有较低的熔点和更高的晶态电阻率，这有利于降低器件的RESET电流.研究还表明，采用16at% Si掺杂Sb₂Te₃薄膜作为存储介质的存储器器件原型具有记忆开关特性，可以在脉高3V、脉宽500ns的电脉冲下实现SET操作，在脉高4V、脉宽20ns的电脉冲下实现RESET操作，并能实现反复写/擦，而采用Ge₂Sb₂Te₅薄膜的相同结构的器件不能实现RESET操作. 关键词： 相变存储器 硫系化合物 2Te₃薄膜')" href="#">Si掺杂Sb₂Te₃薄膜 SET/RESET转变     

Q-shear transformation for MQMAS and STMAS NMR spectra

The multiple-quantum magic-angle spinning (MQMAS) and satellite-transition magic-angle spinning (STMAS) experiments refocus second-order quadrupolar broadening of half-integer quadrupolar spins in the form of two-dimensional experiments. Isotropic shearing is usually applied along the indirect dimension of the 2D spectra such that an isotropic projection free of anisotropic quadrupolar broadening can be obtained. An alternative shear transformation by a factor equal to the coherence level (quantum number) selected during the evolution period is proposed. Such a transformation eliminates chemical shift along the indirect dimension leaving only the second-order quadrupolar-induced shift and anisotropic broadening, and is expected to be particularly useful for disordered systems. This transformation, dubbed Q-shearing, can help avoid aliasing problems due to large chemical shift ranges and spinning sidebands. It can also be used as an intermediate step to the isotropic representation for expanding the spectral window of rotor-synchronized experiments.     

相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究

采用射频磁控溅射方法制备了两种用于相变存储器的Ge₁Sb₂Te₄和Ge₂Sb₂Te₅相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge₁Sb₂Te₄薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、 关键词： 硫系相变材料 1Sb₂Te₄')" href="#">Ge₁Sb₂Te₄ 2Sb₂Te₅')" href="#">Ge₂Sb₂Te₅     

Fast right-angle spinning EPR on organic radicals: Resolution enhancement and angle determination

Fast right-angle sample spinning (RAS) with rotation frequencies up to 17 kHz at temperatures down to 205 K is applied to electron paramagnetic resonance (EPR) experiments on organic radicals. Echo-detected RAS EPR provides substantial resolution enhancements for the range of anisotropies between 10 and 100 MHz which is not accessible with either magic-angle sample spinning EPR or anisotropy-resolved EPR on the basis of slow rotation. The larger reorientation angles in experiments with fast spinning cause strong phase shifts of the echo, which manifest themselves as regions with negative intensity in the spectrum. These phase shifts and thus the lineshape in echo-detected RAS EPR depend significantly on the relative orientation of theg and hyperfine tensor. For the determination of anisotropies in poorly resolved spectra of organic radicals in disordered solids, we introduce the two-dimensional fixed-angle rotation experiment as an alternative to anisotropy-resolved EPR.     

Sb2Te3 纳米结构的制备与表征

以室温热电性能优异的传统热电材料Sb₂Te₃为研究对象,利用化学气相沉积法制备Sb₂Te₃单晶纳米结构,并研究其生长机理.实验结果表明,不加催化剂时Sb₂Te₃易生长成六方纳米盘,在金催化剂条件下定向生长成纳米线.Sb₂Te₃的形貌与其晶体结构和生长机理有关.Sb₂Te₃为三角结构,Sb和     

Electrodeposition of BixSb2−xTey thermoelectric thin films from nitric acid and hydrochloric acid systems

The electrochemical behaviors of Bi^III, Te^IV and Sb^III single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, Bi_xSb_2−xTe_y thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of Bi^III, Te^IV and Sb^III in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although Bi_xSb_2−xTe_y thermoelectric thin film which structure is consistent with the standard pattern of Bi_0.5Sb_1.5Te₃ can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.     

Practical comparison of sensitivity and resolution between STMAS and MQMAS for Al

An experimental comparison of sensitivity and resolution of satellite transition (ST) MAS and multiple quantum (MQ) MAS was performed for ²⁷Al (I = 5/2) using several pulse sequences with a z-filter and SPAM, and two inorganic samples of kaolin (Al₂Si₂O₅(OH)₄) and glass (43.1CaO–12.5Al₂O₃–44.4SiO₂). Six pulse sequences of STMAS (double-quantum filter-soft pulse added mixing = DQF-SPAM, double-quantum filter = DQF, double-quantum = DQ) and MQMAS (3QMAS-z-filter = 3Qz, 3QMAS-SPAM = 3Q-SPAM, 5QMAS-z-filter = 5Qz) are employed. All experiments have been conducted utilizing a static field of 16.4 T (700 MHz for ¹H) and a rotor spinning frequency of 20 kHz. Dependence of S/N ratios as a function of radio frequency (r.f.) field strengths indicates that strong r.f. fields are essential to obtain a better S/N ratio in all experiments. High sensitivity is obtained in the following order: DQF-SPAM, DQF, DQ, 3QSPAM, and 3Qz, although the degree of sensitivity enhancement given by STMAS for glass is slightly smaller than that for kaolin. This might be due to the different excitation and conversion efficiencies of ST and MQ coherences as a function C_q values because quadrupolar interaction of the glass are widely distributed, or to motional broadening caused by framework flexibility in the structure of glass. With respect to resolution, the full widths at half maximum (FWHM) of F₁ projections of DQF-STMAS and 3QMAS spectra for kaolin are found to be comparable, which agrees with a simulated result reported in a literature. For glass, the STMAS possess slightly wider line widths than 3QMAS. However, because such a difference in line widths of STMAS and 3QMAS spectra is substantially small, we have concluded that STMAS and 3QMAS have comparable resolution for crystalline and non-crystalline materials.     

Solid-state NMR investigations of Si-29 and N-15 enriched silicon nitride

We compare ²⁹Si magic-angle spinning (MAS) nuclear magnetic resonance (NMR) spectra from the two modifications of silicon nitride, α-Si₃N₄ and β-Si₃N₄, with that of a fully (²⁹Si, ¹⁵N)-enriched sample ²⁹Si₃¹⁵N₄, as well as ¹⁵N NMR spectra of Si₃¹⁵N₄ (having ²⁹Si at natural abundance) and ²⁹Si₃¹⁵N₄. We show that the ¹⁵N NMR peak-widths from the latter are dominated by J(²⁹Si–¹⁵N) through-bond interactions, leading to significantly broader NMR signals compared to those of Si₃¹⁵N₄. By fitting calculated ²⁹Si NMR spectra to experimental ones, we obtained an estimated coupling constant J(²⁹Si–¹⁵N) of 20 Hz. We provide ²⁹Si spin-lattice (T₁) relaxation data for the ²⁹Si₃¹⁵N₄ sample and chemical shift anisotropy results for the ²⁹Si site of β-Si₃N₄. Various factors potentially contributing to the ²⁹Si and ¹⁵N NMR peak-widths of the various silicon nitride specimens are discussed. We also provide powder X-ray diffraction (XRD) and mass spectrometry data of the samples.     

Performance improvement of Sb2Te3 phase change material by Al doping

Al doped Sb₂Te₃ material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb₂Te₃ films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al_0.69Sb₂Te₃ material has a better data retention (10 years at 110 °C) than that of Ge₂Sb₂Te₅ material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al_0.69Sb₂Te₃ based device.     

Effective Mass Enhancement and Thermal Conductivity Reduction for Improving the Thermoelectric Properties of Pseudo-Binary Ge2Sb2Te5

Ge₂Sb₂Te₅ is a famous phase-change memory material for rewriteable optical storage, which is widely applied in the information storage field. The stable trigonal phase of Ge₂Sb₂Te₅ shows potential as a thermoelectric material as well, due to its tunable electrical transport properties and low lattice thermal conductivity. In this work, the carrier concentration and effective mass of Ge₂Sb₂Te₅ are modulated by substituting Te with Se. Meanwhile, the thermal conductivity reduces from 2.48 W m⁻¹ K⁻¹ for Ge₂Sb₂Te₅ to 1.37 W m⁻¹ K⁻¹ for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. Therefore, the thermoelectric figure of merit zT increases from 0.24 for Ge₂Sb₂Te₅ to 0.41 for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. This study reveals that Se alloying is an effective way to enhance the thermoelectric properties of Ge₂Sb₂Te₅.     

Practical aspects of Lee-Goldburg based CRAMPS techniques for high-resolution 1H NMR spectroscopy in solids: implementation and applications

Elucidating the local environment of the hydrogen atoms is an important problem in materials science. Because ¹H spectra in solid-state nuclear magnetic resonance (NMR) suffer from low resolution due to homogeneous broadening, even under magic-angle spinning (MAS), information of chemical interest may only be obtained using certain high-resolution ¹H MAS techniques. ¹H Lee–Goldburg (LG) CRAMPS (Combined Rotation And Multiple-Pulse Spectroscopy) methods are particularly well suited for studying inorganic–organic hybrid materials, rich in ¹H nuclei. However, setting up CRAMPS experiments is time-consuming and not entirely trivial, facts that have discouraged their widespread use by materials scientists. To change this status quo, here we describe and discuss some important aspects of the experimental implementation of CRAMPS techniques based on LG decoupling schemes, such as FSLG (Frequency Switched), and windowed and windowless PMLG (Phase Modulated). In particular, we discuss the influence on the quality of the ¹H NMR spectra of the different parameters at play, for example LG (Lee–Goldburg) pulses, radio-frequency (rf) phase, frequency switching, and pulse imperfections, using glycine and adamantane as model compounds. The efficiency and robustness of the different LG-decoupling schemes is then illustrated on the following materials: organo-phosphorus ligand, N-(phosphonomethyl)iminodiacetic acid [H₄pmida] [I], and inorganic–organic hybrid materials (C₄H₁₂N₂)[Ge₂(pmida)₂OH₂]·4H₂O [II] and (C₂H₅NH₃)[Ti(H_1.5PO₄)(PO₄)]₂·H₂O [III].     

High-resolution solid-state NMR of anisotropically mobile molecules under very low-power H decoupling and moderate magic-angle spinning

We show that for observing high-resolution heteronuclear NMR spectra of anisotropically mobile systems with order parameters less than 0.25, moderate magic-angle spinning (MAS) rates of 11 kHz combined with ¹H decoupling at 1–2 kHz are sufficient. Broadband decoupling at this low ¹H nutation frequency is achieved by composite pulse sequences such as WALTZ-16. We demonstrate this moderate MAS low-power decoupling technique on hydrated POPC lipid membranes, and show that 1 kHz ¹H decoupling yields spectra with the same resolution and sensitivity as spectra measured under 50 kHz ¹H decoupling when the same acquisition times (50 ms) are used, but the low-power decoupled spectra give higher resolution and sensitivity when longer acquisition times (>150 ms) are used, which are not possible with high-power decoupling. The limits of validity of this approach are explored for a range of spinning rates and molecular mobilities using more rigid membrane systems such as POPC/cholesterol mixed bilayers. Finally, we show ¹⁵N and ¹³C spectra of a uniaxially diffusing membrane peptide assembly, the influenza A M2 transmembrane domain, under 11 kHz MAS and 2 kHz ¹H decoupling. The peptide ¹⁵N and ¹³C intensities at low-power decoupling are 70–80% of the high-power decoupled intensities. Therefore, it is possible to study anisotropically mobile lipids and membrane peptides using liquid-state NMR equipment, relatively large rotors, and moderate MAS frequencies.     

Microstructures and thermoelectric properties of GeSbTe based layered compounds

Microstructures and thermoelectric properties of Ge₁Sb₂Te₄ and Ge₂Sb₂Te₅ chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge₂Sb₂Te₅ compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge₁Sb₂Te₄ and Ge₂Sb₂Te₅ attained 0.975×10^-3 W m^-1K^-2 at 750 K and 0.767×10^-3 W m^-1K^-2 at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. PACS  84.60.Rb; 81.05.Hd; 72.20.Pa; 64.70.Kb; 61.66.Fn     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

Improved quantification of alite and belite in anhydrous Portland cements by Si MAS NMR: Effects of paramagnetic ions

The applicability, reliability, and repeatability of ²⁹Si MAS NMR for determination of the quantities of alite (Ca₃SiO₅) and belite (Ca₂SiO₄) in anhydrous Portland cement was investigated in detail for 11 commercial Portland cements and the results compared with phase quantifications based on powder X-ray diffraction combined with Rietveld analysis and with Taylor–Bogue calculations. The effects from paramagnetic ions (Fe³⁺) on the spinning sideband intensities, originating from dipolar couplings between ²⁹Si and the spins of the paramagnetic electrons, were considered and analyzed in spectra recorded at four magnetic fields (4.7–14.1 T) and this has led to an improved quantification of alite and belite from ²⁹Si MAS NMR spectra recorded at “high” spinning speeds of ν_R=12.0–13.0 kHz using 4 or 5 mm rotors. Furthermore, the impact of Fe³⁺ ions on the spin-lattice relaxation was studied by inversion-recovery experiments and it was found that the relaxation is overwhelmingly dominated by the Fe³⁺ ions incorporated as guest-ions in alite and belite rather than the Fe³⁺ sites present in the intimately mixed ferrite phase (Ca₂Al_xFe_2−xO₅).     

Why does PMLG proton decoupling work at 65 kHz MAS?

Schemes such as phase-modulated Lee–Goldburg (PMLG) for homonuclear dipolar decoupling have been shown to yield high-resolution ¹H spectra at high magic-angle spinning (MAS) frequencies of 50–70 kHz. This is at variance to the commonly held notion that these methods require MAS frequencies not comparable to the cycle frequencies of the pulse schemes. Here, a theoretical argument, based on bimodal Floquet theory, is presented to explain this aspect together with conditions where PMLG type of schemes may be successful at high MAS frequencies.     

Infrared-to-visible upconversion in Er and Er/Yb activated Sb2O4 nanopowders prepared by sol-gel route

We prepared Er³⁺ doped and Er³⁺/Yb³⁺ codoped Sb₂O₄ nanocrystals by the sol-gel method. The Raman, X-ray diffraction (XRD), transmission electron microscope (TEM), and photoluminescence spectra of the samples were studied. The phonon energy of the Sb₂O₄ nanocrystals is very low (the maximum value being 461 cm⁻¹). The upconversion (UC) red emission of the Er³⁺/Yb³⁺ codoped sample is very strong at 975 nm laser diode excitation. The Sb₂O₄ nanocrystals will be a promising luminous material.     

应用于相变存储器的Cu-Ge3Sb2Te5薄膜的结构及相变特性研究

采用磁控溅射法制备了不同Cu含量的Cu-Ge₃Sb₂Te₅薄膜, 原位测试了薄膜电阻与温度的关系, 并利用X射线衍射仪、透射电镜、透过和拉曼光谱仪分别研究了 Cu-Ge₃Sb₂Te₅薄膜的晶体结构、微结构、禁带宽度及成键情况. 结果表明, Cu-Ge₃Sb₂Te₅薄膜的结晶温度和结晶活化能随着Cu含量的增加而增大, Cu的加入有效改善Ge₃Sb₂Te₅薄膜的热稳定性和10年数据保持力. 随着Cu含量的增加, 非晶态Cu-Ge₃Sb₂Te₅薄膜的禁带宽度逐渐减小. 同时, 拉曼峰从129 cm^-1向127 cm^-1处移动, 这是由于Cu–Te极性键振动增强的缘故. Cu-Ge₃Sb₂Te₅结晶为均匀、相互嵌套的六方Cu₂Te和Ge₂Sb₂Te₅相.     

Electrophysical properties and electronic structure of tin-doped antimony telluride

The effect of Sn atoms on the electrophysical properties and x-ray photoelectron spectra of Czochralski-grown Sb₂Te₃ single crystals is studied. The character of the temperature dependences of the kinetic coefficients is shown to depend noticeably on the structure of the valence band, which consists of two valence subbands. Estimates of the effective density-of-states masses of holes and of the gap between the valence-band extrema in Sb₂Te₃: Sn agree with the data available for the Sb₂Te₃ not doped with tin. X-ray photoelectron spectra of Sb₂Te₃: Sn single crystals do not exhibit noticeable core-level shifts and electron density redistribution in the valence band.     

In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature

Using in situ atomic force microscope (AFM) and Raman spectroscopy, the real-time crystallization properties of Ge₂Sb₂Te₅ films at different temperature were characterized. The given AFM topograph and phase images revealed that the structure of amorphous Ge₂Sb₂Te₅ films began to change at a temperature of as low as 100 °C. When the temperature reached 130 °C, some crystal fragments had formed at the film surface. Heating up to 160 °C, the size of the visible crystal fragments increased, but decreased at a higher temperature of 200 °C. When the Ge₂Sb₂Te₅ film was cooled down to room temperature (RT) from 200 °C, the crystal fragments divided into crystal grains due to the absence of heating energy. The Raman spectra at different temperature further verified the structure evolution of the Ge₂Sb₂Te₅ film with temperature. This work is of significance for the preparation of Ge₂Sb₂Te₅ films and the erasing of data.