Anti‐Stokes Luminescence of Cadmium Telluride Nanocrystals

For the first time, the antiStokes luminescence in colloidal solutions of CdTe nanocrystals on excitation below the absorption edge has been discovered. The maximum spectral shift to the shortwave region relative to the excitation energy E _con ^max = 319 meV is obtained for meansized nanocrystals (2.5 nm). The conversion efficiency of the absorbed radiant energy is 1.3·10^–2%. The rise in the antiStokes photoluminescence intensity with increasing temperature and the linear dependence on the exciting radiation intensity have been established. It is shown that the effect observed cannot be caused by twophoton excitation or by Auger recombination. It is assumed that the basic mechanism of the luminescence observed is the radiative recombination through the energy levels of the states attributable to the disturbance of the crystal structure in the nanocrystals.     

Raman Scattering of Synthetic Polymers‐A Review

Abstract

Four years after Raman discovered the Raman effect, the first spectrum of a high polymer, i.e., polystyrene, was observed by Signer and Weiler 111, so the field of Raman spectroscopy of polymers is not a new field. However, it was not until twenty years later that the second Raman spectrum of a polymer, that of poly(methy1 methacrylate), was observed [2]. The reasons for this lack of activity rest on the fact that the sample had to be clear, transparent, and nonfluorescing to obtain a Raman spectrum. Most polymers do not fall in any of these categories. Workers like Nielsen [3,4] (PE and PTFE), Tobin [5,6] (PE, PP, PTFE), Brown [7] (PE), and Tadokoro [8,9] (POM, PEG) obtained spectra with Toronto arc spectrometers out only after an enormous amount of diligent effort. However, these workers were successful in drawing attention to the potential of Raman spectroscopy as a tool for the characterization of polymers. Nielsen's review [lo] presented substantial motivation for work in this area, but the experimental difficulties tended to discourage everyone. With the advent of laser excitation and the high quality of the first reported [ll] laser Raman spectrum of a polymer, a revival of work and interest in this field ensued and many workers are now active in the field, as reflected by the increasing number of papers in Raman spectroscopy of polymers. One review of laserexcited Raman spectroscopy of polymers has already beenwritten [12].     

Resonant Raman Scattering Spectra of Zn‐Phthalocyanine and Zn‐Phthalocyanine‐d 16

We obtained the resonant Raman scattering spectra of Znphthalocyanine and of its fully deuterated analog, Znphthalocyanined ₁₆. We performed calculation of normal vibrations and using it, interpreted the Raman scattering spectra. We characterized the form of vibration with the aid of potential energy distribution. For the majority of vibrations the calculation adequately describes the observed isotropic shifts. The correspondence between the vibrational states of Znphthalocyanine and metal complexes of tetrabenzoporphin has been established in confirmation of the proposed detailed interpretation of the spectra.     

Giant Raman Scattering Spectra of the Molecular Complex Doxorubicin–DNA

We have investigated the giant Raman scattering spectra of the doxorubicin–DNA complex adsorbed on the surface of annealed thin silver films modified by sodium chloride. It is found that doxorubicin interacts with DNA via carbon groups with involvement of their electron system into interaction. Heating of a substrate in the process of adsorption from 20 to 37°C leads to a sharp increase in the number of chemisorbed molecules as a result of the thermally activated formation of specific adsorption sites. It has been found that in adsorption of the doxorubicin–DNA complex on the substrate surface, the chromophore molecules are oriented predominantly in parallel with the surface of the metal.     

Picosecond Stimulated Raman Scattering of SrWO4 Crystal

Stimulated Raman scattering （SRS） of picosecond pulses is investigated in a new crystal SrWO4. The second harmonic generation of a mode-locked Nd：YAG laser system is used as the pump source. In an external singlepass configuration, the SRS thresholds for the first to the fourth Stokes lines are measured. For the first Stokes line, the steady-state gain coefficient of the SrWO4 crystal is calculated to be 15.96cm//GW. In our experiment, as many as five Stokes lines （559.23 nm, 589.61 nm, 623.49 nm, 661.50 nm, 704.44 nm） and three anti-Stokes lines （506.97nm, 484.34 nm, 463.65nm） are observed, and the total conversion efficiency is as high as 62%.     

Manifestation of Extracoordination in the Resonance Raman Spectra of Water‐Soluble Cation Co‐Porphyrins

Resonance Raman spectra (RRS) of Co(II) and Co(III)5,10,15,20tetrakis(4Nmethylpyridinium)porphyrin ((Co^II(TmpyP4), and Co^III(TMPyP4)) in aqueous solutions at different pH as well as in organic solvents (methanol, ethanol, DMSO, DMF) are obtained. The increased sensitivity of the oscillation frequencies ₂, ₄, ₈, and ₆ — the markers of the oxidation state of a metal — to the nature of an axial ligand has been revealed. For Co^III(TmpyP4), the shifts of the indicated frequencies in extracoordination have turned out to be twofold larger than those for Co^II(TmpyP4). The spectral effects observed are related to different electron influence of the extraligands on the system of the porphyrin ring. In the case of Co(III)porphyrin, interaction of the d orbitals of the metal and the e _g ^*orbitals of the macrocycle is more efficient since its ionic radius is smaller than for the Co(II)complex. For Co^III(TmpyP4), a linear correlation between the oscillation frequencies ₂, ₄, ₈, and ₆ and the experimental Gutmann parameters characterizing the electronacceptor properties of solvents is found.     

Variability on Raman Shift to Stress Coefficient of Porous Silicon

Porous silicon film is a capillary-like medium, which is able to reveal different meso-elastic modulus with porosity. During the preparation of porous silicon samples, the capillary force is a non-classic force related to the liquid evaporation which directly influences the evolution of residual stress. In this study, a non-linear relation of Raman shift to stress coefficient and the porosity is obtained from the elastic modulus measured with nano-indentation by Bellet et al. [J. Appl. Phys. 60 （1996） 3772] Dynamic capillarity during the drying process of porous silicon is investigated using micro-Raman spectroscopy, and the results reveal that the residual stress resulted from the capillarity increased rapidly. Indeed, the dynamic capillarity has a close relationship with a great deal of micro-pore structures of the porous silicon.     

Theory of Raman Scattering in Intense Short Pulse Laser Plasmas

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Raman Scattering Detection of Stacking Faults in Free-Standing Cubic-SiC Epilayer

We report on stacking fault （SF） detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si（100） substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability （BP） model in the framework of linearchain concept. Cood agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 A in the BP model.     

Time—dependent Theory of Raman Scattering with Pulses—Application to Continuum Raman Spectroscopy

A theory of real-time dependence of Raman scattering for a pulse-mode laser is developed within second-order perturbation theory and using the wavepacket terminology.We apply the theory to continuum Raman scattering for short and long pulses and varying pulse carrier frequency,For an initial ground virational state,it is shown that the rate of Raman emission as a funcition of time and pulse carrier frequency is structureless for all pulses,and for pulses that are longer than the dissociation time the rate also decays with the pulses.This is contrary to recently reported resonance fluorescence type structures at long times (M.Shapiro,J.Chem.Phys.99,2453(1993),We explain why such structures are unphysical for continuum Raman scattering.     

Adsorption of Bipyridine Compounds on Gold Nanoparticle Surfaces Investigated by UV‐Vis Absorbance Spectroscopy and Surface Enhanced Raman Scattering

Adsorption behaviors of 2,2′‐bipyridine (2,2′‐BiPy), 2,4′‐bipyridine (2,4′‐BiPy), and 4,4′‐bipyridine (4,4′‐BiPy) on gold nanoparticle surfaces have been comparatively investigated by means of UV‐vis absorbance spectroscopy and surface‐enhanced Raman scattering (SERS). The three bipyridine compounds are assumed to have a standing geometry on Au surfaces as indicated from several spectral features and relative vibrational intensity factors on the basis of the electromagnetic (EM) selection rule. 2,4′‐BiPy appears to adsorb on Au surfaces via the 4‐pyridyl nitrogen atom as suggested from the stronger enhancement of the vibrational bands ascribed to the 4‐pyridyl ring. The SERS intensities for the three bipyridine compounds on Au could be ascribed to both the electromagnetic (EM) and charge transfer (CT) enhancement mechanism. The charge transfer is assumed to be dissimilar for 2,2′‐BiPy, 2,4′‐BiPy, and 4,4′‐BiPy due to their different positions of the nitrogen atoms as indicated from the disparate ν_8a band enhancements upon adsorption on surfaces.     

Compensations of Stimulated Brillouin Scattering Effect with Stimulated Raman Effect in Distributed EDFA

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Amplification effect on stimulated Brillouin scattering in the S-band forward G652 fiber Raman amplifier

The amplification effects on forward and backward stimulated Brillouin scattering (SBS) lines in the forward pumped S-band distributed G652 fiber Raman amplifier (FRA) have been studied. There is a pump threshold power of Stokes backward stimulated Brillouin scattering (B-SBS) line in the forward pumped G652 FRA, it is about 1 mW. The Stokes B-SBS lines are amplified by FRA and fiber Brillouin amplifier (FBA). The gain of amplification is given as Ga = GR · GB where GR is Raman gain and GB is Brillouin gain. In experimental work, the saturation gain of the first order Stokes backward SBS line is about 58 dB and the saturation gain of 25-km G652 forward FRA is about 25 dB, so the gain of FBA is about 33 dB. The forward stimulated Brillouin scattering (F-SBS) is generated and amplified in S-band G652 FRA. The stimulated threshold powers of the forward first order Stokes SBS (SB1-), second order Stokes SBS (SB2-), and third order SBS (SB3-) in the forward pumped FRA are 2.3, 1.6, and 1.6 mW, respectively. In experimental work, the saturation gains of SB1-, SB2-, and SB3- are about 38, 62, and 60 dB, respectively. The saturation Raman gain of 25-km G652 forward FRA is about 8.8 dB, so the Brillouin gains of SB1-, SB2-, and SB3- are about 29.2, 53.2, and 51.2 dB, respectively. The forward and backward cascaded SBS lines have been observed.     

Calculation of Systematic Errors in Determining Light‐Scattering Matrix Elements

We consider systematic errors in determining lightscattering matrix elements by a device in which the polarization properties of probing radiation change depending on different angular positionings of the principal directions of the first phase plate, and we perform polarization analysis of scattered radiation using the Fourier expansion of the signal from a photodetector that records the intensity of radiation passed through the rotating second phase plate and a stationary analyzer. Formulas estimating the errors arising in separate deviation of the axes of the anisotropic optical elements in the illuminating and lightreceiving channels of the measuring device were derived. Using the method of mathematical simulation, we consider the combined influence of various inaccuracies in positioning anisotropic elements.     

Stimulated Raman Scattering of a Modulated Laser Beam in Air： a Perturbation Approach

Stimulated Raman scattering （SRS） of a third-harmonic beam of a high-power laser in air is analysed by using a perturbation approach. It is found that intensity modulations of the third-harmonic beam, resulting from the surface ripple of nonlinear crystal, can be significantly enhanced due to SRS, and the gain of instability increases with the spatial period of modulation. Numerical simulations based on the nonlinear coupled-wave equations verify the validity of the perturbation approach.     

Research on Stimulated Raman Scattering Spectrum for Cavity Targets at the Shenguang-Ⅱ Laser Facility

The stimulated Raman scattering (SRS) experiments with half-cavity targets have been carried out at the Shenguang-lI laser facility. The imitative optic multiple-channel analyser (OMA) spectrograph is used to obtain the SRS experimental spectrum. We have developed a two-dimensional laser plasma interaction (LPI2D)code. The SRS spectrum for half-cavity targets is analysed theoretically and simulated numerically using the LPI2D code. These simulations quantitatively reproduce the experimental results firstly.     

Radius of ^9C from the Asymptotic Normalization Coefficient

The asymptotic normalization coefficient (ANC) of^9C=^8B p deduced from S Li(d, p)^9 Li reaction is used to obtain the root-mean-square (rms) radius of the loosely bound proton in the ^9C ground state. We obtain (r^2)1/2 = 3.61 fm for the valence proton, which is significantly larger than the matter radius of ^9C. The probability of the valence proton outside the matter radius of ^9C is greater than 60%. The present work supports the conclusion that ^9C has a proton halo structure.     

Mechanism of Pseudogap Detected by Electronic Raman Scattering： Phase Fluctuation or Hidden Order？

We study the electronic Raman scattering in the cuprates to distinguish the two possible scenarios of the pseudogap normal state. In one scenario, the pseudogap is assumed to be caused by phase fluctuations of the preformed Cooper pairs. We find that pair-breaking peaks appear in both the B1g and B2g Raman channels, and they axe smeared and tend to shift to the same energy with the increasing strength of phase fluctuations. Thus both channels reflect the same pairing energy scale, irrespectively of the doping level. In another scenario, the pseudogap is assumed to be caused by a hidden order that competes with the superconducting order. As an example, we assume that the hidden order is the d-density-wave （DDW） order. We find analytically and numerically that in the DDW normal state there is no Raman peak in the B2g channel in a tight-binding model up to the second nearest-neighbor hopping, while the Raman peak in the Big channel reflects the energy gap caused by the DDW order. This behavior is in agreement with experiments in the pseudogap normal state. To gain further insights, we also calculate the Raman spectra in the DDW＋SC state. We study the doping and temperature dependence of the peak energy in both channels and find a two-gap behavior, which is in agreement with recent Raman experiments. Therefore, our results shed light on the hidden order scenario for the pseudogap.