Effective mass calculation for InSe, InSe:Er crystals

Undoped indium selenide (InSe) and Er doped InSe single crystals were grown by Bridgman–Stockberger method. The InSe crystals both undoped and doped Er had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10–320 K and the external electric field effect on the absorption measurements is investigated. The absorption edge shifted towards to the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shifting, effective mass values are calculated.     

Absorption measurements in InSe:Ho single crystal under an electric field

InSe:Ho single crystal was grown by Bridgman-Stockberger method. Electric field effects on the absorption measurements have been investigated as a function of temperature in InSe:Ho single crystal. The absorption edge shifted towards longer wavelengths and a decrease of intensity in absorption spectra occurred under an electric field of 7.5 kV/cm. Using absorption measurements, steepness parameter and Urbach energy were calculated under electric field. Applied electric field caused an increase in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.322 and 1.301 eV for zero voltage and 1.245 and 1.232 eV for applied electric field, respectively.     

Potential and restriction of high resolution,high energy photoemission in 400–8,000 eV for studying strongly correlated electron systems

InSe and InSe:Er single crystals were grown by using the Bridgman–Stockbarger method. The absorption measurements were carried out for voltage U=0 and U=30 V states of InSe and InSe:Er samples in the temperature range of 10–320 K with a step of 10 K. The absorption edge shifted towards longer wavelengths and the intensity of the absorption spectra decreased under a 5.90 kV/cm electric field. The same binding energy values for InSe and InSe:Er were calculated as 22.2 and 14.2 meV at U=0 and U=30 V, respectively. The steepness parameters and Urbach energies for InSe and InSe:Er samples increased with increasing sample temperature in the range of 10–320 K. An applied electric field caused a shift and a decrease of the intensity of the absorption spectra and an increase in the Urbach energy and steepness parameters. The shift of the absorption edge can be explained on the basis of the Franz–Keldysh effect or thermal heating of the sample under the electric field. PACS 71.20.Nr     

Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology.     

Measurement of the K X-ray absorption jump factors and jump ratios of Gd, Dy, Ho and Er by attenuation of a Compton peak

The X-ray absorption jump factor and jump ratio of Gd, Dy, Ho and Er were measured with a Si(Li) detector by attenuation, with Gd, Dy, Ho and Er foil, a Compton peak produced by the scattering of the Am-241 Gamma rays. Al was chosen as secondary exciter. The experimental absorption jump factors and jump ratios are compared with the theoretical estimates of WinXcom (Radiat. Phys. Chem. 60 (2001) 23), McMaster (Compilation of X-ray cross sections UCRL-50174, 1969; Sec. II. Rev. I), Broll (X-ray Spectrom 15 (1986) 271), Hubbel and Seltzer (NISTIR (1995) 5632) and Budak (Radiat. Meas. accepted for publication). The present results constitute the first measurement for this combination of energy and elements, and good agreement is obtained between experiment and theory.     

Crystallographic and optical properties of rare-earth chromium sulfides RCrS3

Rare earch chromium sulfides RCrS₃; R=Y, Gd, Dy, Ho and Er have been synthesized by high temperature reaction of the respective oxides, RCrO₃, with CS₂. Single crystals have been grown by mineralization of the polycrystalline powders using halogen as a mineralizer. The crystal structures were determined from X-ray rotation and Weissenberg photographs. RCrS₃, with R=Y, Gd, Ho and Er, were found to have an isostructural monoclinic structure, while DyCrS₃ was found to have an orthorhombic structure, closely related to the monoclinic compounds. The optical absorption of these compounds, as well as of LaCrS₃ whose structure was previously reported, was measured over the photon energy range 0·15～1·7 eV. For all the compounds, a sharp absorption edge was found at 1·20～1·30 eV at room temperature.This absorption edge shifts toward higher energy upon cooling from room temperature. The infrared absorption of DyCrS₃, HoCrS₃ and ErCrS₃ was negligible, while that of YCrS₃, LaCrS₃ and GdCrS₃ increased markedly, with decreasing photon energy.     

X-ray photoelectron spectrum and two-dimensional band structure of InSe

The X-ray photoelectron spectrum of InSe is reported and interpreted on the basis of a tight-binding calculation which neglects interlayer interactions. The proposed band structure is also in reasonable agreement with the experimental energy bands recently obtained from angle-resolved photoemission.     

Optical properties of nanostructured InSe thin films

Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity. The optical properties of nanocrystalline thin films of InSe were studied using spectrophotometric measurements of transmittance, T, and reflectance, R, at normal incidence of light in the wavelength range 200–2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in InSe films is indirect allowed with a value of energy gap equals to 1.10 eV, which increased to 1.23 eV upon annealing.     

Optical nonlinearities in GaSe and InSe crystals upon laser excitation

The nonlinear absorption of light and its temporal evolution in the vicinity of exciton resonance in layered GaSe and InSe crystals under high optical excitation have been experimentally investigated. The decisive factor for the observed temporal dependence of the absorption coefficient and its dependence on the excitation intensity is screening excitons by nonequilibrium-carrier plasma. It is shown that the increase in the transmittance in the absorption-band edge in GaSe with a simultaneous blue shift of the band edge is caused by filling the energy bands under high optical excitation.     

Influence of γ-radiation on photoconductivity spectra of InSe monocrystals

The influences of γ-radiation with photon energy hν ～ 1.23 MeV on photoconductivity of layered InSe crystals have been studied. The photosensitivity is increased because of small doses of γ-radiation. It has been observed that γ-radiation makes the impurity peaks in the photoconductivity spectra disappear. This process is attributed to the phenomenon of irradiation annealing characterized by formation of the complexes including fine impurity centers and specific γ-radiation defects.     

Crystal growth and optical properties of Cr3+, Er3+, RE3+: Gd3Ga5O12 (RE=Tm,Ho, Eu) for mid-IR laser applications

In this paper we report on the optical properties of triply Cr³⁺, Er³⁺, and RE³⁺ (RE=Tm, Ho, Eu) doped Gd₃Ga₅O₁₂ crystals that were grown by the Czochralski method. Optical absorption, near-infrared (NIR), and mid-infrared (mid-IR) fluorescence spectra were characterized for the fabricated crystals and corresponding luminescence decay measurements under 654 nm excitation were also carried out. Based on the analysis of energy transfer process between Er and RE (RE=Tm, Ho, Eu) ions, the energy transfer efficiency (ETE) values were evaluated, correspondingly. From the spectral data of all the studied crystals, it is observed that the co-doped Cr³⁺ ion highly increases the absorption pump power and the three kinds of co-doped RE³⁺ ions depopulate the Er:⁴I_13/2 energy level effectively. The spectral analysis shows that titled rare earth doped crystals are promising materials for ～3.0 μm mid-IR laser applications and among them Cr,Er,Eu:GGG is relatively more suitable due to its excellent optical properties compared with others.     

InSe electrical characterization by means of transport parameters

SCLC measurements in single crystals of the layered semiconductor n-type InSe are reported. The measurements were carried out at various temperatures and on samples grown with indium added in excess (from 5 to 10%). The experimental results suggest that the trapping levels location and the charge transport are dependent on the indium excess. Only the samples grown with an indium excess of about 5% show the features typical of intrinsic semiconductors. The anomalous behaviour of samples grown with indium excess between 6 and 10 is explained by means of scattering mechanisms between charge carriers and ionized impurity centers.     

Anisotropic thermal expansion of yttrium metal and yttrium-based rare earth alloys at low temperature

We report on thermal expansion measurements at low temperatures of pure Y and RE (RE: Er, Dy, Tb and Gd) single crystals. We estimate the electronic and lattice contributions for the thermal expansion of pure yttrium. For the dilute RE alloys, the thermal expansion exhibits crystal field effects. These are explained with a free energy including crystal field, elastic and magnetoelastic terms.     

Quantum transport studies of electron accumulation layers in InSe bulk crystals

Summary Experiments show that the Hall resistivityρ _xy of InSe bulk crystals is quantized into integer multiples ofh/e ². Quantum Hall effect in InSe is explained as a result of plane defects in InSe crystals. The electrons in bulk InSe are localized at these defects at low temperatures forming regions with two-dimensional conductivity. Concentration of electrons in these regions isN _2D=2·10¹¹ cm⁻² and their mobility μ=2·10⁴cm²/V·s. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

六角氮化硼(h-BN)对单层硒化铟(InSe)的调制效应及这一新结构的电子性质

采用基于密度泛函理论的第一性原理计算和分析了三种InSe/h-BN异质结的结构和电子性质.研究发现InSe/h-BN异质结具有间接带隙特点,并且价带顶和导带底的贡献均来自于InSe,差分电荷密度表明体系中没有明显的电荷交换.通过体系能带结构,我们发现h-BN层对单层InSe有着明显的调控效应.对比纯粹应变调控下单层的InSe的能带结构,发现h-BN对InSe能带结构的调控效应实际上是由InSe和h-BN之间的相互作用而诱导的晶格应变引起的.我们的研究结果表明,单层InSe沉积或生长在不同h-BN片上可以获得不同的晶格应变,实现对单层InSe能带结构的有效调控.     

Spectral investigation of R,Ce:YAG(R: Pr~(3+), Eu~(3+), Gd~(3+)) single crystals and their applications in white LEDs

Eu3+, Pr3+, or Gd3+codoped Ce:YAG single crystals were grown by using the Czochralski method. The photoluminescence(PL) emission and excitation spectra and transmittance were measured and investigated. The additional red-emitting bands were observed in the PL emission spectra of Eu,Ce:YAG and Pr,Ce:YAG single crystals and the formation of noticeable peaks was studied with reference to the schematic energy level diagrams. A red-shifted phenomenon was observed in the PL emission spectrum of Gd,Ce:YAG. With codoped Eu3+, Pr3+, or Gd3+ions, warmer white light was achieved for the white light emitting diodes and the color rendering index became higher.     

Sensitive elements of pressure transducers made of layered intercalated InSe, GaSe, and Bi2Te3 crystals

It is shown that layered InSe, GaSe, and Bi₂Te₃ semiconductors are promising for sensitive elements of pressure transducers. Two ways for measuring pressure with layered crystals are suggested: from the pressure dependence of the intercalation parameter (current) and from the pressure dependence of the intercalate electromotive force.     

On measurement of the K X-ray absorption jump factors and jump ratios of Gd, Dy, Ho and Er by attenuation of a Compton peak

The article entitled “Measurement of the K X-ray absorption jump factors and jump ratios of Gd, Dy, Ho and Er by attenuation of a Compton peak” by Budak G, and Polat R, published in the Journal of Quantitative Spectroscopy and Radiative Transfer 2004;88:525–532, carries out an inadequate treatment of their measured data that renders their results unsuitable for practical use. The analysis and evaluation below describes precisely the mistakes that invalidate the conclusions of this article.     

Fabrication and lithium electrochemistry of InSe thin film

InSe thin film has been successfully fabricated by pulsed-laser deposition method. Electrochemical behavior of Li/InSe cell has been investigated by Galvanostatic cycling and cyclic voltammetry measurements for the first time. The reversible capacity of InSe electrode of 410 mAh/g with the volumetric capacity of about 3302 mAh/cm³ was achieved at a current density of 0.05 mA/cm². By using XRD and XPS measurements, both alloying/de-alloying processes and selenidation/reduction processes were revealed during the electrochemical cycling of InSe thin film electrode. InSe was found to be a novel candidate of anode materials for rechargeable lithium batteries.     

Structure and magnetic properties of cobalt-intercalated layered InSe crystals

We study the structure and magnetic properties of Co _x InSe layered crystals electrochemically intercalated by cobalt in a constant magnetic field. It is found that impurity clusters consisting of cobalt nano-particles with the fcc structure are formed in the intercalates under investigation on the Van der Waals planes in the space between the layers. Intercalates Co_0.1InSe obtained by implantation in a magnetic field exhibit a change in their magnetic properties (dependence of the magnetic moment in the magnetic field strength has the form of a hysteresis loop, which is typical of ferromagnetic materials).