The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation

Magnetotransport at fields up to 500 mT and LF-noise characteristics are reported for miniature magnetoresistors with ferrite concentrators based on Sn-doped n-InSb/i-GaAs heterostructures grown by MBE. The thickness of the InSb epilayers lie in the range 0.55–1.5 μm giving room temperature mobilities of 2.5–5.5 m² V⁻¹ s⁻¹ with carrier densities of (0.5–1.5)×10¹⁷ cm⁻³. The room temperature magnetoresistance (MR) for our two terminal devices could be as high as 115% at 50 mT which is comparable to the extraordinary MR (ExMR) recently reported in microscopic composite van der Pauw disks four terminal devices [Science 289 (2000) 1530]. In addition, a high signal-to-noise ratio and a good temperature stability of R(B)/R₀=0.5–0.83% K⁻¹ was observed for B<60 mT (below the saturation field B_sat for ferrite). Device resistance stability R₀(T) was equal to 0.27–0.66% K⁻¹ in zero field with a nominal device resistance R₀=197–224 Ω for DC currents in the range I=0.01–1.0 mA. The minimum detectable magnetic field is estimated from the reduced differential MR (∂R/∂B)/R=2000% T⁻¹ at B=31 mT and normalised 1/f current noise power spectral density measured at the same field. The resolution limit B_min=2.6 nT at 10² Hz and B_min=0.82 nT at 10³ Hz. These resolution limits are seven times better than those recently reported for the same material n-InSb/i-GaAs and ferrite fabricated Hall sensors [Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers, for Hall sensors applications over extremely wide ranges of temperature and magnetic field, Proceedings NGS 10, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 151–154].     

Interaction of oxovanadium(IV) with carboxylic ligands in aqueous solution: A thermodynamic and visible spectrophotometric study

The hydrolysis of VO²⁺ and the complex with sulfate were studied potentiometrically, spectrophotometrically and calorimetrically, in NaCl aqueous solution (0 < I ≤ 1 mol L^− 1) and at t = 25 °C. The formation of two hydrolytic species VO(OH)⁺ and VO₂(OH)₂²⁺ and one complex with sulfate was found, with log β = − 5.65 for the reaction VO²⁺ + H₂O = VO(OH)⁺ + H⁺, log β = − 7.02 for the reaction 2VO²⁺ + 2H₂O = (VO)₂(OH)₂²⁺ + 2H⁺ and log K = 1.73 for VOSO₄⁰ species (at I = 0.1 mol L^− 1 and t = 25 °C). For these species, using calorimetric data, ΔH and TΔS values were also obtained. By using the above values, interactions of VO²⁺ with acetate (ac), malonate (mal), succinate (suc), 1,2,3-propanetricarboxylate (tca) and 1,2,3,4-butanetetracarboxylate (btc) ligands were studied potentiometrically and spectrophotometrically. The formation of ML⁺, ML₂⁰ and MLOH⁰ for ac; ML⁰, MLH⁺, ML₂²⁻ and ML₂H⁻ for mal; ML⁰, MLH⁺ and MLOH⁻ for suc; ML⁻ and MLH⁰ for tca and ML²⁻, MLH⁻ and MLH₂⁰ for btc were found. Formation constants are reported at I = 0.1 mol L^− 1, together with SIT parameters for the dependence on ionic strength. By visible spectrophotometric measurements, λ_max and ε_max values for the relevant species in solution were determined.     

平面弯曲波导耦合器的特性分析

根据耦合模理论和弯曲波导耦合器的结构特点,对平面弯曲波导耦合器的特性进行了分析,结果表明弯曲波导耦合器的弯曲半径和最小间距两个可调变量,增加了波导器件设计的灵活性;同时由于等效耦合长度的调制作用使得弯曲波导耦合器在波分复用/解复用中比平行直波导耦合器具有更大的复用带宽;分析了弯曲半径和最小间距对弯曲波导耦合器复用带宽的影响,为实际波导器件的设计制作提供了一定的理论依据.     

Synthesis of photosensitive poly(methyl methacrylate-co-glycidyl methacrylate) for optical waveguide devices

Photosensitive poly(MMA-co-GMA) for optical waveguide was synthesized, and the refractive index of the polymer film was tuned in the range of 1.481–1.588 at 1550 nm by mixing with bis-phenol-A epoxy resin. The film, which was made by spinning coated the poly(MMA-co-GMA) with photo initiator, had good UV light lithograph sensitivity, high glass transition temperature (T _g : 153°C, after crosslinking) and good thermal stabilities (T _d : up to 324°C, after crosslinking). The optical waveguides with very smooth top surface were fabricated from the resulting polymer by direct UV exposure and chemical development. For waveguides with cladding, the propagation losses of the channel waveguides were measured to be below 3 dB/cm at 1550 nm.     

Structure, ferroelectric and piezoelectric properties of (Bi1−x−yNa0.925−x−yLi0.075)0.5BaxSryTiO3 lead-free piezoelectric ceramics

Lead-free multi-component ceramics (Bi_1−x−yNa_{0.925−x−y}Li_0.075)_0.5Ba_xSr_yTiO₃ have been prepared by an ordinary sintering technique and their structure and electrical properties have been studied. All the ceramics can be well-sintered at 1100 °C. X-ray diffraction patterns shows that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) is formed at 0.04 < x < 0.08. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the coercive field E_C of the ceramics decreases greatly and the remanent polarization P_r of the ceramics increases significantly after the formation of the multi-component solid solution. Due to the MPB, lower E_C and higher P_r, the piezoelectricity of the ceramics is greatly improved. For the ceramics with the compositions near the MPB (x = 0.04–0.08 and y = 0.02–0.04), piezoelectric coefficient d₃₃ = 133–193 pC/N and planar electromechanical coupling factor k_P = 16.2–32.1%. The depolarization temperature T_d reaches a minimum value near the MPB. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both the polar and non-polar regions at temperatures near/above T_d.     

High-resolution infrared study of the 2ν3 (A1, E) and ν1 + ν3 (E) bands of NF3

The 2ν₃ overtone (A₁, E) and the ν₁ + ν₃ (E) combination bands of the oblate symmetric top ¹⁴NF₃ were studied by FTIR spectroscopy with a resolution of 2.5 × 10⁻³ cm⁻¹. Nearly 500 lines up to K_max/J_max = 30/43 were observed for the weak A₁ component reaching the v₃ = 2⁰ substate (1803.1302 cm⁻¹), the majority of which corresponded to reinforced K = 3p-type transitions. For the strong E component reaching the v₃ = 2^±2 substate (1810.4239 cm⁻¹), about 3550 transitions were assigned up to K_max/J_max = 65/69, favoring a clear observation of the ℓ(4, −2) and ℓ(4, 4) splittings within the kℓ = −2 and +4 sublevels, respectively. The two v₃ = 2 substates are linked by the ℓ(2, 2)- and ℓ(2, −1)-type interactions, providing severe crossings, respectively, at K′ = 6 and near K′ = 24 on the v₃ = 2⁺² side. A model working in the D-reduction and including all these ℓ-type interactions could reproduce together 3695 nonzero weighted experimental data (NZW) through 33 free parameters with a standard deviation of σ = 0.357 × 10⁻³  cm⁻¹. As for the ν₁ + ν₃ (E) combination band, about 3690 lines were assigned up to K_max/J_max = 45/55. Its v₁ = v₃ = 1 upper state (1931.577 5 cm⁻¹) was treated using the same model recently applied to the v₃ = 1 (E, 907.5413 cm⁻¹) state. It yielded 21 free parameters through 3282 NZW experimental data, adjusted with σ = 0.344 × 10⁻³  cm⁻¹ in the D-reduction. For the two excited states, the small and unobserved ℓ(0, 6) interaction was tested as useless. To confirm the adequacy of the vibrationally isolated models used, some other reductions of the Hamiltonian were tried. For the v₃ = 2 state, the D-, L-, and LD-reductions led to similar σ’s, while the Q one was not successful. For the v₁ = v₃ = 1 state, the D- and Q-reductions gave comparable σ’s, while the QD-reduction was not as good. The corresponding unitary equivalence relations are generally more nicely fulfilled for the v₃ = 2 state than for the v₁ = v₃ = 1 state. The three derivable anharmonicity constants in cm⁻¹ are x₃₃ = −4.1528, g₃₃ = +1.8235 and x₁₃ = −7.9652.     

A dual-channel wavelength multiplexer / demultiplexer based on the restricted-resonance self-imaging effect

The authors propose a high-performance 980 / 1550-nm wavelength multiplexer / demultiplexer based on the restricted-resonance self-imaging effect in a buried-type waveguide system. The device functions either as a multiplexer or a demultiplexer, depending upon the direction of light propagation. Using the modal propagation analysis (MPA), characteristics of the device are investigated. We carried out the design of the device and showed that the device performance can be optimized by appreciate selection of the coupler width. A demultiplexer with an insertion loss of 0.4 dB and contrast of 25.5 dB at wavelength 1550 nm and 32 dB at 980 nm is demonstrated.     

Waveguide and diode heterodyne measurements with CO2 laser and assignment of the CW FIR laser emission of OCS

Heterodyne spectra of carbonyl sulfide have been obtained with saturation in a CO₂ waveguide laser and without saturation with a diode laser. The absolute uncertainties of the measured positions lie between 10⁻⁴ and 7 × 10⁻⁶ cm⁻¹. The CW submillimeter laser line of OCS at 378 μm has been assigned to the J = 65 → 64 transition in the 02²0e state of ¹⁶O¹²C³²S, with a pumping through the R(64) line of 02²0e ← 00⁰0, a Δ-Σ transition weakly allowed by the l-type resonance.     

Water incorporation into the Ba2(In1 − xMx)2O5‪ (M = Sc 0 ≤ x < 0.5 and M = Y 0 ≤ x < 0.35) system and protonic conduction

Ba₂(In_1 − xM_x)₂O_{5 − y / 2}(OH)_y‪□_{1 − y / 2} (y ≤ 2; M = Sc³⁺ 0 ≤ x < 0.5 and M = Y³⁺ 0 ≤ x < 0.35) compounds were prepared by reacting Ba₂(In_1 − xM_x)₂O₅‪ phases with water vapor. This reaction is reversible. Analyses of the hydration process by TG and XRD studies show that the thermal stability of hydrated phases increases when x increases and that the incorporation of water is not a single-phase reaction inducing either a crystal system or space group modification. Fully hydrated (y = 2) and dehydrated (y = 0) samples have been stabilized at room temperature and characterized for all compositions. In wet air, all phases show a proton contribution to the total conductivity at temperatures between 350 and 600 °C. At a given temperature, proton conductivity increases with the substitution ratio and reaches at 350 °C, 5.4 10^− 3 S cm^− 1 for Ba₂(In_0.65Sc_0.35)₂O_4.2□_0.2(OH)_1.6.     

Lithium ion conductive glass–ceramics with Li3Fe2(PO4)3 and YAG laser-induced local crystallization in lithium iron phosphate glasses

The glasses with the composition of 37.5Li₂O–(25 − x)Fe₂O₃–xNb₂O₅–37.5P₂O₅ (mol%) (x = 5,10,15) are prepared, and it is found that the addition of Nb₂O₅ is effective for the glass formation in the lithium iron phosphate system. The glass–ceramics consisting of Nasicon-type Li₃Fe₂(PO₄)₃ crystals with an orthorhombic structure are developed through conventional crystallization in an electric furnace, showing electrical conductivities of 3 × 10^− 6 Scm^− 1 at room temperature and the activation energies of 0.48 eV (x = 5) and 0.51 eV (x = 10) for Li⁺ ion conduction in the temperature range of 30–200 °C. A continuous wave Nd:YAG laser (wavelength: 1064 nm) with powers of 0.14–0.30 W and a scanning speed of 10 μm/s is irradiated onto the surface of the glasses, and the formation of Li₃Fe₂(PO₄)₃ crystals is confirmed from XRD analyses and micro-Raman scattering spectra. The crystallization of the precursor glasses is considered as new route for the fabrication of Li₃Fe₂(PO₄)₃ crystals being candidates for use as electrolyte materials in lithium ion secondary batteries.     

A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers

The gain characteristics of erbium-doped Al₂O₃ waveguide amplifiers are investigated by solving numerically rate equations with upconversion effects and propagation equations. We obtained the dependence of gain of erbium-doped Al₂O₃ waveguide amplifiers on the waveguide length, erbium concentration and pump power at different pumping wavelengths (980 and 1480 nm). The performance of amplifiers pumping at 1480 and 980 nm are compared. It is shown that 980 nm pumping has higher gain and higher pumping efficiency. The parameters of waveguide amplifiers have been optimized. A optical gain of 43 dB can be achieved for a optimum waveguide length of 8.25 cm and 5.8 × 10²⁰ cm^–3 Er concentration pumped with 100 mW at 980 nm, that is a gain of 5.2 dB/cm.     

Kerr property of cubic K0.95Li0.05Ta0.60Nb0.40O3 single crystal

The Kerr (quadratic electro-optic) property of K_0.95Li_0.05Ta_0.60Nb_0.40O₃ was measured by using an automated scanning Mach–Zehnder interferometer. K_0.95Li_0.05Ta_0.60Nb_0.40O₃ has large Kerr effect with R₁₁ = 7.2 × 10⁻¹⁶ m²/V² and R₁₂ = −1.2 × 10⁻¹⁶ m²/V² at 632.8 nm near its phase-transition temperature. The dielectric and Kerr properties as function of temperature were also investigated, thus the quadratic polarization-optic coefficients were calculated. The values of g₁₁ and g₁₂ are 0.083 m⁴/C² and −0.014 m⁴/C², respectively, and do not depend on temperature within the measurement accuracy of 5%.     

Effect of In-content on the optical properties of a-Se films

The optical transmission spectra of amorphous (a-) Se_1−xIn_x films, with x = 0.0, 0.05, 0.18 and 0.35, that prepared by thermal evaporation from their corresponding bulk ingots, are recorded over the spectral region of 500–2500 nm. A simple straight forward procedure proposed by Swanepeol has been applied to determine the two components of the complex refractive index (). The dispersion of is examined in terms of the Wemple and DiDomenico model and is discussed in terms of In-content. An estimation of various optical parameters such as, the optical energy gap (E_g = 1.96–1.33 eV), single oscillator energy (E_o = 3.95–3.16 eV), oscillator dispersion energy (E_d = 22.6–31.6 eV), lattice oscillator strength (E_l = 0.38–0.61 eV) and wavelength at zero material dispersion (λ_c = 2.0569–2.0879 μm) have been given and discussed in relation to the coordination number, hydrostatic density and formed chemical bonds that are introduced in the network of a-Se with the introduction of up to 35 at.% In.     

Superprotonic solid solutions between CsHSO4 and CsH2PO4

Solid solutions of (CsHSO₄)_1 − x(CsH₂PO₄)_x (x = 0.25-0.75) were synthesized by mechanical milling method over a wide range of compositions. Superprotonic cubic phase was confirmed for all these samples between 293 and 420 K depending on its composition. These superprotonic phases have primitive cubic structure similar to that of CsH₂PO₄. The kinetic stability of the supercooled cubic phase depends both on the composition x and the humidity of surrounding atmosphere. The most stable composition of the cubic phase was found around x = 0.67 and could be maintained for several days even under ambient atmosphere. The ionic conductivities of these superprotonic phases reached 10^− 2–10^− 3 S∙cm^− 1 at 450 K. With increasing x the ionic conductivity at the superprotonic phase decreased continuously associated with the increase of the activation energy. These findings suggest that the average number of the hydrogen bonds between XO₄ (X = S, P) units plays an important role on the stability of the cubic phase and also on the conductivity.     

Core-shell LaF<Subscript>3</Subscript>:Er,Yb nanocrystal doped sol–gel materials as waveguide amplifiers

The oleic acid (OA)-modified LaF₃:Er,Yb and LaF₃:Er,Yb–LaF₃ core-shell nanocrystals are synthesized. The lifetime values could be further improved by incorporating core-shell nanocrystals. A kind of sol–gel derived organic–inorganic hybrid material (SGHM) allows for 50 wt.% or even more of both the two nanocrystals in the matrix, and we give the explanation from scattering analysis. It’s precisely because we use the erbium nanocrystals rather than erbium organic complexes, and avoid the undesirable luminescence quenching by Er–Er clustering with a high Er³⁺ concentration. LaF₃:Er,Yb–LaF₃/SGHM transparent films and optical waveguides are also fabricated. The nanocomposite films show strong 1550 nm luminescence intensity under the excitation of 980 nm after heat treatment below 150 °C and the full-width-at-half-maximum is about 51 nm. The loss and optical gain of the waveguide are measured. A relative gain of about 3.5 dB is measured at 1550 nm in a 1.7 cm long waveguide.     

Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN_x:H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN_x:H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH₃]/silane [SiH₄] gas flow ratios (R=0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of SiH (2160 cm⁻¹) and NH (3330 cm⁻¹) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R>1.5. Breaking the SiH bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R=2 and annealed at 700 °C (30 min).     

Electrical conductivity of Ag/Na ion-exchanged titanosilicate glasses

The Ag₂O–TiO₂–SiO₂ glasses were prepared by Ag⁺/Na⁺ ion-exchange method from Na₂O–TiO₂–SiO₂ glasses at 380–450 °C below their glass transition temperatures (T_g), and their electrical conductivities were investigated as functions of TiO₂ content and the ion-exchange ratio (Ag/(Ag+Na)). In a series of glasses 20R₂O·xTiO₂·(80−x)SiO₂ with x=10, 20, 30 and 40 in mol%, the electrical conductivities at 200 °C of the fully ion-exchanged glasses of R=Ag were in the order of 10⁻⁵ or 10⁻⁴ S cm⁻¹ and were 1 or 2 orders of magnitude higher than those of the initial glasses of R=Na. The glass of x=30 exhibited the highest increase of conductivity from 3.8×10⁻⁷ to 1.3×10⁻⁴ S cm⁻¹ at 200 °C by Ag⁺/Na⁺ ion exchange among them. When the ion-exchange ratio was changed in 20R₂O·30TiO₂·50SiO₂ system, the electrical conductivity at 200 °C exhibited a minimum value of 7.6×10⁻⁸ S cm⁻¹ around Ag/(Ag+Na)=0.3 and increased steeply in the region of Ag/(Ag+Na)=0.5–1.0. When the ion-exchange temperature was changed from 450 to 400 °C, the conductivity of the ion-exchanged glass of x=30 decreased. The infrared spectroscopy measurement revealed that the ion-exchange temperature of 450 °C induced a structural change in the glass of x=30. The T_g of the fully ion-exchanged glass of x=30 was 498 °C. It was suggested that the incorporated silver ions changed the average coordination number of titanium ions to form higher ion-conducting pathway and resulted in high conductivity in the titanosilicate glasses.     

Design of a wavelength demultiplexer based on a parabolically tapered multimode interference coupler

A compact wavelength demultiplexer is designed for the operation at 1.30 and 1.55 μm wavelengths using the three-dimensional semi-vectorial beam propagation method. The parabolically tapered multimode interference (MMI) coupler based on the deep-etched SiO₂/SiON rib waveguide is introduced into the present demultiplexer for reducing the length. The numerical results show that a MMI section of 330.0 μm in length, which is only 76% length of a straight MMI coupler, is achieved with the contrasts of 42.3 and 39.2 dB in quasi-TE mode, and 38.4 and 37.8 dB in quasi-TM mode at wavelengths 1.30 and 1.55 μm, respectively and the insertion losses below 0.2 dB. The modified finite difference scheme is applied to approximate the resulting equations along the transverse directions, in which the discontinuities of the derivatives of magnetic field components H_y and H_x along the vertical and horizontal interfaces, respectively, are involved.     

Structure and electrical properties of Bi0.5(Na, K)0.5TiO3−BiGaO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x − y)Bi_0.5Na_0.5TiO₃−xBi_0.5K_0.5TiO₃− yBiGaO₃ have been fabricated by an ordinary sintering technique, and their structure and electrical properties and depolarization temperature have been studied. The results of X-ray diffraction reveal that Bi_0.5K_0.5TiO₃ and BiGaO₃ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure. An obvious change in microstructure with increasing concentration of Bi_0.5K_0.5TiO₃ and BiGaO₃ was observed. The piezoelectric constant d₃₃ and the electromechanical coupling factor k_p of the ceramics attain maximum values of 165 pC/N and 0.346 at y = 0.01(x = 0.18) and x = 0.21(y = 0.01), respectively. The temperature dependence of dielectric constant indicates an obvious relaxor characteristic with strong frequency dependence of dielectric constant. The depolarization temperature decreased with increasing content of BiGaO₃ and first decreases and then increases with increasing amount of Bi_0.5K_0.5TiO₃.     

Search for new iron oxypnictide superconductors by using high-pressure synthesis technique

Here we report on the invention of the Co-doped induced superconductivity in PrFe_1−xCo_xAsO (x = 0 and 0.075). Polycrystalline samples were prepared by high-pressure synthesis method. The PrFe_1−xCo_xAsO (x = 0 and 0.075) crystallizes with the ZrCuSiAs type crystal structure (P4/nmm). The PrFeAsO is a parent compound with non-superconducting phase which can be transformed to superconductor by replacement 7.5% of Fe by Co. The magnetic susceptibility measurement shows the onset of superconducting transition temperature at 15 K.