Tm3+,Yb3+双掺KLa(WO4)2晶体的生长及光谱特性研究

以Yb3 作为Tm3 的敏化剂,采用泡生法生长了四方晶系的Tm,Yb∶KLW晶体(Tm3 ,Yb3 掺杂浓度分别为1%和8%(原子分数))。测试了晶体的红外光谱和拉曼光谱,并对出现的峰值进行了振动归属。分析了晶体的吸收光谱,计算了相应的光谱参数。从荧光光谱可以看出,在1028 nm附近,Yb3 发射主峰的发射线宽达16 nm,对应的是Yb3 的2F5/2和2F7/2的最低能态之间的跃迁;Tm3 在1768 nm处的荧光发射峰半高宽为40 nm左右。测试了晶体的上转换荧光谱,分别在485 nm,643 nm处得到了上转换蓝光和红光,并分析了相应的上转换机制。     

Tm,Ho:BaY2F8晶体光谱性能与能量传递

采用提拉法,生长钬铥双掺氟化钇钡[分子式:Tm3+Ho3+:BaY2F8,简称Tm,Ho:BYF]激光晶体.工艺参数:拉速0.5 mm·h-1,转速5 r·min-1,冷却速率lO℃·h-1.XRD表明:属于单斜晶系,空间群C12/ml.计算出晶格参数:a=0.69973 nm,6=1.05293 nm,c=0.42784 nm,β=99.710°.测试了晶体的吸收及荧光光谱,同时计算了784 nm处吸收峰的半高宽、吸收系数及吸收截面,分别为3.2 nm,2.23 cm-1,7.44x10-21 cm2.该吸收峰对应于Tm3+离子从基态3H6到激发态3h6的跃迁.Tm,Ho:BYF晶体存2.06μm附近有很强的荧光发射峰,在该荧光峰的发射截面和荧光寿命分别为4.96x10-21cm2,10.1 ms.Tm3+→Ho3+的正向、反向能量转换系数之比是10.4.     

Tm，Ho∶BaY2F8晶体光谱性能与能量传递

采用提拉法,生长钬铥双掺氟化钇钡[分子式:Tm3+,Ho3+∶BaY2F8,简称Tm,Ho∶BYF]激光晶体。工艺参数:拉速0.5 mm.h-1,转速5 r.min-1,冷却速率10℃.h-1。XRD表明:属于单斜晶系,空间群C12/m1。计算出晶格参数:a=0.69973 nm,b=1.05293 nm,c=0.427 84 nm,β=99.71°。测试了晶体的吸收及荧光光谱,同时计算了784 nm处吸收峰的半高宽、吸收系数及吸收截面,分别为3.2 nm,2.23 cm-1,7.44×10-21 cm2。该吸收峰对应于Tm3+离子从基态3H6到激发态3H4的跃迁。Tm,Ho∶BYF晶体在2.06μm附近有很强的荧光发射峰,在该荧光峰的发射截面和荧光寿命分别为4.96×10-21 cm2,10.1 ms。Tm3+→Ho3+的正向、反向能量转换系数之比是10.4。     

Yb~(3 )对Tm~(3 )间接敏化与基质晶格关系

Yb3 敏化Tm3 有两种方式 ,一种是直接敏化上转换 ,另一种是间接敏化上转换。前种直接采用 980nm激光激发 ,而后者可用 80 7nm激光激发 ,无疑后者有利于提高上转换发光的量子效率。由于基质晶格的晶体场强度不同 ,对称性有高有低 ,造成的稀土离子的能级分裂不同 ,通过分析双掺BaY2 F8,Cs3Yb2 Cl9等材料的光谱资料并结合生长的双掺Yb3 ,Tm3 ∶ZnWO4 单晶光谱的实际测试与分析 ,提出了Yb3 和Tm3 间的间接敏化共振能量传输的新观点 ,并具体分析了能形成这一上转换机制的条件。与间接敏化非共振能量传输不同 ,一是Yb3 的2 F5/2 →2 F7/2 的跃迁应与Tm3 3H4 →1 G4 能级间隔尽可能接近 ;二是Yb3 激发态能级2 F5/2 与Tm3 的3H4 能级尽可能接近。这要求基质材料的晶体场场强要弱 ,对称性要低。间接敏化共振能量传输极有可能引起光子雪崩上转换 ,这将为探索实用上转换激光晶体提供有益经验。     

新型激光晶体α-Nd∶Ba3Y(BO3)3光谱性能研究

研究了高温相掺钕硼酸钇钡α-Nd∶Ba3Y(BO3)3(α-NBYB)晶体的光谱特性. Α-NBYB晶体具有R3空间群结构. 吸收光谱表明: 该晶体在808 nm左右有比较强的吸收峰, 其对应于4I9/2→4F5/2,2H9/2的能级跃迁, 半峰宽(FWHM)15 nm, 相应的吸收截面为1.56×10-20 cm2, 荧光光谱表明: 4F3/2→4I11/2能级跃迁有很强的荧光发射, 其发射波长为1.058 μm, 相应的荧光寿命为70 μs, 发射跃迁截面为1.82×10-19 cm2, 并用J-O理论计算了该晶体的振子强度参数: Ω2=1.43×10-20, Ω4=2.08×10-20, Ω6=2.45×10-20 cm2.     

辐射陷阱效应对钨酸镧晶体中Yb3+光谱性质的影响

采用提拉法获得了Yb3 :La2(WO4)2晶体,并测量了该晶体的室温吸收光谱.为了分析辐射陷阱效应对Yb3 光谱性质的影响,分别测量了块状和粉末状晶体样品的荧光光谱和荧光衰减曲线.研究结果表明:辐射陷阱效应导致钨酸镧晶体中Yb3 离子的荧光光谱、受激发射截面和荧光寿命等光谱性质发生了明显的变化.     

Yb~(3+)∶KY(WO_4)_2晶体生长与光谱性能

采用泡生法生长Yb∶KYW晶体,通过XRD分析确认所生长的晶体为-βYb∶KYW。TG-DTA测量结果表明,晶体的熔点为1045℃,相变温度为1010℃。测得晶体红外光谱和拉曼光谱,对其峰值所属振动的归属进行了指认,并测量了晶体的吸收光谱和荧光光谱。结果表明,Yb∶KYW晶体在940,980 nm附近有很强的吸收峰,主峰980 nm处的吸收截面积为1.34×10-19cm2;该晶体在990,1010,1030 nm附近都有较强的荧光发射峰,其中最强发射峰1030 nm的发射线宽高达16 nm,有望作为可调谐激光器的增益介质。计算得其1030 nm受激发射截面积为3.1×10-20cm2。     

过渡金属掺杂NaGdF_4:Yb~(3+),Ho~(3+)纳米晶的制备和上转换发光性能

采用水热法合成掺杂过渡金属离子Mn2+和Cr3+的Na Gd F4:Yb3+,Ho3+纳米晶,研究了纳米晶的结构和上转换发光性能。XRD研究结果表明:所有的样品均为六方结构Na Gd F4。合成的纳米晶在980 nm红外光激发下,呈现绿光(520~562 nm),红光(620~675 nm)和红外光(730~760 nm)发射。与未掺杂过渡金属离子的样品相比,掺杂Mn2+离子的Na Gd F4:Yb3+,Ho3+纳米晶上转换发光总效率提高,红光/绿光相对强度增加,红外光/绿光相对强度减弱,掺杂Cr3+离子的Na Gd F4:Yb3+,Ho3+纳米晶发光总效率稍有减弱,红光/绿光和红外光/绿光相对强度增加。主要源于Ho3+→Mn2+→Ho3+和Ho3+→Cr3+→Ho3+的两步能量传递。计算色坐标可得,掺杂Cr3+/Mn2+离子后的Na Gd F4:Yb3+,Ho3+纳米晶的发光由绿光区移向黄光区,微调了纳米晶体的发光颜色。     

Tm:Lu_3Al_5O_(12)晶体的生长与光谱性能研究

采用提拉法生长高质量的纯LuAG晶体和4%(原子分数)Tm:LuAG晶体.对晶体的晶胞参数和光谱性能进行了详细的表征.研究发现:Tm~(3+)的掺入没有改变LuAG基质的晶体结构;吸收光谱中255 nm处的吸收带是由Fe~(3+),Fe~(2+)引起的;晶体在782 nm处的吸收峰,与商用AlGaAs二极管的发射波长匹配良好,吸收截面为5.07×10~(-21) cm~2.Tm:LuAG晶体在2 μm波段的荧光峰对应~3F_4-~3H_6能级之间的跃迁,荧光寿命长达11.9 ms,有利于激光的高能量调Q输出.结果表明,Tm:LuAG晶体是2 μm激光器中很有发展潜力的增益介质,将会替代Tm:YAG晶体应用于激光雷达系统.     

Ag@SiO_2@GdF_3:Yb,Er核壳结构纳米材料的制备与增强上转换荧光

采用直接沉淀法成功制备了Ag@SiO2@GdF3:Er,Yb核壳结构纳米上转换发光粒子,并用XRD,TEM,UV-Vis,FTIR以及荧光光谱等对其结构和发光性能进行了表征.XRD分析表明:Ag表面包覆上了结晶良好的正交晶系的GdF3:Er,Yb.TEM照片显示:制备的复合纳米粒子具有明显的球形核壳结构,内核Ag粒子的直径约50 nm左右,包覆后的Ag@SiO2@GdF3:Er,Yb粒径约为80~120 nm,表面光滑且包覆完全.UV-Vis光谱证明:GdF3:Er,Yb和SiO2成功包覆在Ag核表面,包覆后Ag纳米粒子的表面等离子体共振吸收峰发生了红移.荧光光谱表明:在980 nm激光激发下,该复合纳米粒子显示出和纯的GdF3:Er,Yb相同的Er3+的特征红色和绿色上转换发光,以位于655 nm处的Er3+离子的4F9/2→4I15/2的红光发射最强,并且复合粒子的发射光强度比纯的GdF3:Er,Yb有所增强.     

Die Kristallstruktur des W3CoB3 und der dazu isotypen Phasen Mo3CoB3, Mo3NiB3 und W3NiB3

Zusammenfassung Mo₃CoB₃, Mo₃NiB₃, W₃CoB₃ und W₃NiB₃ kristallisieren in einem eigenen Typ (W₃CoB₃-Struktur). Das trigonal prismatische Bauelement [T ₆B]^* ist zu Ketten vereinigt, wobei B₃-Gruppen entstehen. Die Phasen sind vermutlich Bor-reicher als obiger Formel entspricht.

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The crystal structure of W₃CoB₃ and the isotypic phases Mo₃CoB₃, Mo₃NiB₃, and W₃NiB₃

Mo₃CoB₃, Mo₃NiB₃, W₃CoB₃, and W₃NiB₃ were found to possess a new type of crystal structure (W₃CoB₃-structure type). Trigonal prismatic groups [T ₆B]^* are linked together forming chains in such a way that B₃-groups occur. These borides do probably exist with a larger amount of boron as to compared with the formula.

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γ-Nitro-γ-butyrolacton

γ-Nitro-γ-butyrolactone By oxidation of 3-(1-nitro-2-oxocyclohexyl)propanal ( 1 ) with KMnO₄, besides 3-(1′-nitro-2′-oxocyclohexyl)pripionic acid ( 2 ), the complete hydrolysis product 4-oxononanedioic acid ( 4 ) and the oxidized semi-hydrolysis product 5-(2-nitro-5-oxotetrahydro-2-furyl)pentanoic acid ( 3 ) were formed. The crystalline 3 decomposes at r.t. forming 4 and nitrous gases; its structure was established by X-ray determination.     

Synthesis of γγγ-trifluorocarbonyl compounds

γγγ-Trifluorocarbonyl compounds are easily obtained in a good yield by introduction of the 1,1,1-trifluoroethyl moiety (CF₃-CH₂-) on the -methylene group of a ketone.     

K3SbSe3, Rb3SbSe3 und Cs3SbSe3 – Synthese und Kristallstruktur

K₃SbSe₃, Rb₃SbSe₃, and Cs₃SbSe₃ – Synthesis and Crystal Structure The compounds K₃SbSe₃, Rb₃SbSe₃ and Cs₃SbSe₃ were synthesized by heating mixtures of Sb₂O₃ and an alkalicarbonate in a stream of hydrogen saturated by selenium in a temperature range between 750 °C and 800 °C. The compounds crystallize isostructural with Na₃AsS₃. A comparison of atomic distances and bond angles with those of the isostructural arsenic and bismuth compounds shows the effect of lone pairs.     

Freezing the polarization of CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite films

Thin films of methylammonium lead halides, CH₃NH₃PbI₃ and CH₃NH₃PbI_3-xCl_x, were deposited onto symmetrical microstructured electrode arrays of gold or platinum on Si/SiO₂ wafers. Polarization studies were carried out on perovskite films under vacuum in the dark. For poling, a constant voltage was applied to the samples while the temperature was cycled between 295 K and 4 K. The measured current densities depending on the temperature showed distinct characteristics relating strongly to the crystal phase and the dielectric properties of the perovskite films. Voltage sweeps were carried out at different scan rates at specific temperature intervals after poling. The polarization of the films due to the migration of iodide vacancies in direction of the blocking perovskite/metal interface was frozen almost up to room temperature. Charge carriers were only able to cross the blocking barrier and contribute to the current where the ions have accumulated during poling. All J-V curves showed hysteresis: inverted and regular hysteresis at room temperature and below, respectively. Inverted hysteresis originates from the slow accumulation of ions at the blocking barrier, while regular hysteresis arises from a distortion in the adjacent crystals which will be discussed.     

Synthesis of some derivatives of 3-amino-3-desoxyerythrose and 3-amino-3-desoxy-D-3-erythrose

The synthesis of derivatives of 3-amino-3-deoxy-L-erythrose by LAH or LAD reduction of the oxime of 1,2-O-isopropylidene α-L -glycero-tetros-3-ulofuranose is described.     

3x-pyrrolizin-3-ones

Condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groups, in the KOH-DMSO system, was used to prepare previously unknown 1-alkylthio-3H pyrrolizin-3-ones. The latter, treated with secondary amines, are readily converted to the corresponding 1-amino derivatives.     

3-H-pyrrolizin-3-ones

Previously unknown 1-alkylthio-3H-pyrrolizin-3-ones have been obtained by the condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groupings in the KOH-DMSO system. On treating the products with secondary amines they are readily converted into the corresponding 1-amino derivatives.Irkutsk Branch of the Russian Academy of Sciences, Irkutsk 664033. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 919–924, July, 1996. Original article submitted May 2, 1996.     

K3BiSe3, Rb3BiSe3 und Cs3BiSe3 – Substitutionsvarianten des Th3P4-Typs

K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃ – Derivatives of the Th₃P₄ Structure Type The compounds K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃ were synthesized by heating mixtures of Bi₂O₃ and the respective alkalicarbonate in a stream of hydrogen saturated by selenium at 850°C. Thin crystals of the compounds appear red in transmitted light. They crystallize isostructural with Na₃AsS₃, space group P2₁3, lattice constants a = 9.771(5) Å, a = 10.161(3) Å, and a = 10.587(5) Å for K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃, respectively. The Na₃AsS₃ structure type is a derivative of the Th₃P₄ structure type.     

Die Akzeptoreigenschaften von AsCl3, AsBr3, asJ3, SbCl3, SbBr3 und SbJ3

Zusammenfassung Es wurden die Enthalpien der Reaktionen von AsCl₃, AsBr₃, AsJ₃, SbCl₃, SbBr₃ und SbJ₃ mit Tributylphosphat, N,N-Dimethylacetamid und Hexamethylphosphorsäuretriamid bestimmt. Das Verhalten der Addukte bei Gegenwart eines Überschusses der Donoren wird beschrieben.

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Acceptor properties of AsCl₃, AsBr₃, AsI₃, SbCl₃, SbBr₃, and SbI₃

The enthalpies of the reactions of AsCl₃, AsBr₃, AsI₃, SbCl₃, SbBr₃ and SbI₃ with tributylphosphate, N,N-dimethylacetamide and hexamethylphosphoric acid triamide were measured. The behavior of the adducts in the presence of excess donor molecules is described.

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