多层纳米AlGaN薄膜制备及其场发射性能

本文采用激光脉冲沉积系统在SiC基底上制备了GaN/AlN/GaN多层纳米结构薄膜,探索了多层纳米薄膜量子结构增强场发射性能.X射线衍射和扫描电子显微镜结果表明,已成功制备出了界面清晰、结晶良好的GaN/AlN/GaN多层纳米薄膜.场发射测试结果表明:多层纳米薄膜结构相对于GaN和AlN单层纳米薄膜,其场发射性能得到显著提升.其开启电场低至0.93V/μm,电流密度在5.5V/μm时已经能够达到30mA/cm~2.随后进一步分析了纳米结构增强场发射机理,电子在GaN/AlN/GaN多层纳米薄膜结构中的量子阱中积累使其表面势垒高度显著下降,并通过共振隧穿效应进一步提高电子的透过概率,从而使场发射性能极大提高.研究结果将为应用于高性能场发射器件的纳米薄膜材料的制备提供一种好的技术方案.     

碳纳米管/硅纳米孔柱阵列的场发射性能

"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

热蒸发法制备ZnO纳米棒阵列

氩气氛常压下，利用热蒸发法，在无催化剂、无ZnO预沉积层的硅衬底上制备了取向良好，排列整齐的ZnO纳米棒阵列．在距Zn源不同位置的Si衬底上得到了不同形貌的样品．硅衬底置于锌源正上方是得到取向一致的ZnO纳米阵列的一个关键性条件．用场发射扫描电子显微镜、X射线粉末衍射表征样品表面形貌、晶体结构．进一步研究了样品的生长机制和荧光性质．     

Ge_xSi_1-x_/Si应变层超晶格的分子束外延生长及其特性研究

在 Si (l00) 衬底上用分子束外延在不同的温度下生长了不同组份的GeGe_xSi_1-x_/Si 应变层超晶格.用反射式高能电子衍射、x 射线双晶衍射、卢瑟福背散射、透射电子显微镜以及Raman散射等侧试方法研究了Ge Ge_xSi_1-x_/Si超晶格的生长及其结构特性. 结果表明, 对不同合金组份的超晶格, 其最佳生长温度不同. x值小, 生长温度高; 反之, 则要求生长温度低. 对于x为0. 1-0. 6 , 在400-600℃ 的生长温度范围能够长成界面平整、晶格完好和周期均匀的GeGe_xSi_1-x_/Si应变层超晶格. 关键词：     

具有窄光致发光谱的纳米Si晶薄膜的激光烧蚀制备

采用XeCl脉冲准分子激光器，在10Pa的Ar气环境下，烧蚀高阻单晶Si靶，分别在距靶3cm的玻璃和单晶Si衬底上制备了纳米Si薄膜. 相应的Raman谱和x射线衍射谱均证实了薄膜中纳米Si晶粒的形成. 扫描电子显微镜图像显示，所形成的薄膜呈均匀的纳米Si晶粒镶嵌结构. 相应的光致发光峰位出现在599nm，峰值半高宽为56nm，与相同参数下以He气为缓冲气体的结果相比，具有较窄的光致发光谱，并显示出谱峰蓝移现象. 关键词： 纳米Si晶粒 脉冲激光烧蚀 薄膜形貌 光致发光     

不同条件制备的ZnO纳米梳结构及其性能研究

采用热蒸发法通过改变衬底放置条件在Si(111)衬底上制备出了ZnO纳米梳结构.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、场发射装置对样品的结构、形貌、光致发光光谱及场发射特性进行了分析.XRD结果表明衬底水平放置(A)和衬底竖直放置(B)制备出的样品均属于多晶六角纤锌矿结构.SEM结果表明两种衬底放置条件下的样品均为纳米梳状结构,改变衬底放置条件ZnO纳米梳的尺寸和形貌有明显改变,其中竖直放置衬底的样品B纳米尺寸较小且比较均匀.室温下的光致发光光谱表明样品B的紫外峰较样品A出现了蓝移,此外样品B的紫外峰强和可见光峰强比值较大,说明此样品的结晶质量较好.场发射特性测试结果表明两个样品的场发射都是通过电子隧道效应进行的,且样品B的场发射性能优于样品A.     

衬底对化学气相沉积法制备氧化硅纳米线的影响

通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线.选用衬底为Si片、带有约100nm厚SiO2氧化层Si片和石英片.利用场发射扫描电子显微镜(SEM)和透射电镜(TEM，配备有能谱仪)对样品的表面形貌、结构和成分进行研究.结果表明：这些纳米线都为非晶态，但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同.讨论了各种衬底对不同特征氧化硅纳米线生长的影响. 关键词： 化学气相沉积 纳米线 纳米颗粒     

微波等离子体化学气相沉积方法在Si衬底上生长SiC纳米线

应用微波等离子体化学气相沉积方法,在单晶Si(100)衬底上生长出SiC纳米线.应用扫描电子显微镜、透射电子显微镜、能量损失谱(EDS)和选区电子衍射(SAD)等方法对纳米线化学组成和结构进行了分析和表征.给出该纳米线的生长机理 关键词： 微波等离子体化学气相沉积 SiC纳米线 生长机理     

锥形碳氮结构的发光性能

利用偏压增强化学气相沉积系统,以CH4、H2和NH3为反应气体,分别在沉积有钛膜和碳膜的Si衬底上制备锥形碳结构,并用扫描电子显微镜、X射线能谱仪和显微Raman光谱仪对其进行表征,结果表明所制备的样品为锥形碳氮结构.用显微Raman光谱仪对锥形碳氮结构在室温下的发光性能进行了研究,发光谱显示出中心在621,643,7...     

单根准直碳纳米纤维的场发射特性

采用等离子体增强热灯丝化学气相沉积方法，以甲烷和氢气为反应气体，在钨丝衬底上制备出准直的碳纳米纤维(CNFs)，其生长密度小于10.6cm-2，长度为6—30μm，直径为60—100nm.并采用自制的双探针扫描电子显微镜系统，对所生长的单根CNF作了场发射特性研究.结果表明，其场发射开启电压约为5V/μm，相应的发射电流达到20μA/cm2，同时，对不同长度的CNFs及单根CNF不同位置的场发射研究表明，场发射电流的大小不仅与材料本身的功函数、外电场场强、材料的微观结构以及宏观的几何结构有关，而且电子在输运过程中所受到的散射也是决定场发射电流大小的关键因素. 关键词： 碳纳米纤维 化学气相沉积 场发射 扫描电子显微镜     

Optical properties of laterally overgrown GaN pyramids grown on (1 1 1) silicon substrate

Optical properties of laterally overgrown GaN hexagonal pyramids on (1 1 1) Si substrates are studied by cathodoluminescence (CL) spectroscopy and mapping techniques. The results are compared with structural properties obtained by scanning and transmission electron microscopic techniques. To clarify the origin of the bandedge and yellow-band emissions from the GaN pyramids, wavelength-resolved CL properties of normal and cleaved GaN pyramids are investigated in the top and/or cross-sectional view configurations. The cross-sectional view CL images for cleaved GaN pyramid samples show significant differences between the overgrown areas on top of the mask and the coherently grown regions over the windows. A precise reverse (identical) contrast between bandedge (yellow-band) emission intensity and threading dislocation density is observed by comparing the cross-sectional view CL and transmission electron microscopic images. It is demonstrated that a strong correlation exists between structural defects and optical properties in laterally overgrown GaN hexagonal pyramids.     

Growth and characterization of high-quality GaN nanowires by ammonification technique

GaN nanowires were successfully synthesized at high quality and large yield on Si (1 1 1) substrate through ammoniating Ga₂O₃/BN films deposited by radio frequency (RF) magnetron sputtering system. X-ray diffraction (XRD), Fourier transformed infrared spectra (FTIR) and selected-area electron diffraction (SAED) confirm that the as-synthesized nanowires are of a hexagonal GaN with wurtzite structure. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) reveal that the nanowires have a straight and smooth curved structure with extremely uniform diameter of about 60 nm, which is helpful to the application of GaN nanowires. The present results demonstrate that the BN is a very important intermedium in the growth of GaN nanowires by this method.     

Synthesis of GaN nanowires by Tb catalysis

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga₂O₃/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.     

PEALD-deposited crystalline GaN films on Si(100) substrates with sharp interfaces

Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Flower-shape clustering GaN nanorods are successfully synthesized on Si（111） substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction （XRD）, scanning electron microscope （SEM）, field-emission transmission electron microscope （FETEM）, Fourier transform infrared spectrum （FTIR） and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence （PL） spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.     

Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures

This paper finds that the two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements, high resolution x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. The results reveal that the formation of surface oxide is the main reason for the degradation, and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.     

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

ZnO thin films were first prepared on Si(111) substrates using a radio frequency magnetron sputtering system. Then the as-grown ZnO films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000°C , respectively. The morphologies of ZnO films were studied by an atom force microscope (AFM). Subsequently, GaN epilayers about 500 nm thick were deposited on the ZnO buffer layers. The GaN/ZnO films were annealed in NH₃ ambient at 900°C. The microstructure, morphology and optical properties of GaN films were studied by x-ray diffraction (XRD), AFM, scanning electron microscopy (SEM) and photoluminescence (PL). The results are shown, their properties having been investigated particularly as a function of the ZnO layers. For better growth of the GaN films, the optimal annealing temperature of the ZnO buffer layers was 900°C.     

Growth and characterization of GaN nanorods through ammoniating process by magnetron sputtering on Si(111) substrates

GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga₂O₃/ZnO films at 950 °C in a quartz tube. The GaN nanorods are characterized by X-ray diffraction, scanning electron microscopy, field-emission transmission electron microscopy, X-ray photoelectron spectroscopy and fluorescence spectrophotometry. The results show that the nanorods have a pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters of about 200 nm, and the growth direction of the GaN nanorods is parallel to the (101) plane. The photoluminescence spectrum indicates that the nanorods have a good emission property. Finally, the growth mechanism is also briefly discussed. PACS 61.46.+w; 78.55.Cr; 81.15.Cd; 81.07.-b; 82.30.Hk     

Synthesis and field emission properties of GaN nanowires

Gallium nitride (GaN) nanowires grown on nickel-coated n-type Si (1 0 0) substrates have been synthesized using chemical vapor deposition (CVD), and the field emission properties of GaN nanowires have been studied. The results show that (1) the grown GaN nanowires, which have diameters in the range of 50-100 nm and lengths of several micrometers, are uniformly distributed on Si substrates. The characteristics of the grown GaN nanowires have been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM), and through these investigations it was found that the GaN nanowires are of a good crystalline quality (2) When the emission current density is 100 μA/cm², the necessary electric field is an open electric field of around 9.1 V/μm (at room temperature). The field enhancement factor is ∼730. The field emission properties of GaN nanowires films are related both to the surface roughness and the density of the nanowires in the film.