Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

Pressure sensitivity of the peak current of gallium arsenide tunnel diodes

The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X₁ and the velocity of travel of the energy gap with pressure: ⁰=(0.37±0.01) eV; d/dP = –(15±2)·10^–6 eV/bar.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 74–77, September, 1976.     

Behavior of copper in gallium arsenide with high tin concentration

Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·10¹⁸ cm^–3, 1.5·10¹⁷ cm^–3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAsSnCu is associated with radiative transitions of electrons to centers with _a =E_v + 0.175 eV. The hole lifetime in GaAsSnCu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 58–63, September, 1980.     

Behavior of copper in gallium arsenide with a high tellurium concentration

The electrophysical properties and cathode luminescence spectra of gallium arsenide with a high tellurium concentration (n = 2·10¹⁸ cm^–3) alloyed with copper are investigated under different diffusion conditions. Centers are determined from measurements of the Hall effect with an ionization energy of 0.190 ± 0.006 eV whose concentration does not depend on the arsenic vapor pressure (0.1 and 1 atm) and the cooling rate of the samples from the diffusion temperature. A band with h_m = 1.30–1.32 eV whose intensity depends on the cooling conditions of the samples was observed in the cathode luminescence spectra of these samples. The nature of the observed defects is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 93–99, July, 1979.In conclusion of this article the authors express their gratitude to L. K. Tarasova for preparation of the samples.     

注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：     

Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions

A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by H⁺ ions at fluxes of up to 1.5·10¹⁶ cm^–2. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton insulation GaAs.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 61–65, October, 1992.     

Degradation of gallium arsenide under irradiation with an excimer laser

The results of a study of degradation of the surface of gallium arsenide resulting from irradiation with a power excimer laser at power densities ranging from the threshold power to the power level causing local melting of the surface are presented. Two degradation mechanisms have been identified, one of which causes the formation of a thin near-surface layer of modified nonstoichimetric gallium arsenide at a power level higher than 1×10⁷ W/cm² and the other of which causes the formation of a separate gallium phase. The formation of the separate gallium phase can be produced either by a single pulse of laser radiation with a power density exceeding 2.7×10¹¹ W/cm² or by a few less powerful pulses. An empirical relationship has been established between the power density and the number of pulses causing the formation of the separate gallium phase. It has also been established that as a result of laser irradiation at the boundary of “cold” and “hot” gallium arsenide, periodically ordered defects in the form of blocks aligned along the [100] directions emerge.     

Optical and Photoelectric Inhomogeneity of CdTe:V Crystals

The optical and photoelectric properties of CdTe:V crystals with the doping impurity concentration N _V = 5·10¹⁸–5·10¹⁹ cm^–3 are investigated and the possibility of their use as a photorefractive material is considered. As is seen from the spectra of optical transmission, the crystals of both types possess high transparency (50–65%), which for CdTe:V specimens with N _V = 5·10¹⁹ cm^–3 decreases sharply and in the range 12–14 m does not exceed 5%, whereas for CdTe:V crystals with vanadium concentration of 5·10¹⁸ cm^–3 such a value of transmission remains unchanged up to 25 m, implying a good optical quality of the latter crystals and their possible application in the spectral range 1.06–1.25 m in modern fiber-optic communication lines.     

Investigations of the excitation energy transport mechanism in donor-acceptor systems

Measurements of fluorescence quantum yield _D/_oD of Na-fluorescein (donor; D) versus concentration of rhodamine B (acceptor; A) in viscous solutions have been carried out. The donor concentration in these solutions was as follows:C _D=2·10^–2 M (system I), 1.5·10^–2 M (II), 10^–2 M (III), 3·10^–3 M (IV), and 5·10^–5 M (V). The experimental results have been compared with current theories of nonradiative electronic energy transfer (NEET). In the case of very strong migration (systems I, II, and III), a significant influence of correlations (between configurations of D and A molecules in the surroundings of successively excited donors) on quantum yield _D/_oD has been determined. Experimental values have been found to be clearly higher in comparison with those predicted theoretically. The influence of possible factors on the decrease in the effectiveness of excitation energy transport to traps-acceptors in systems of very strong migration has been discussed.Dedicated to Professor A. Kawski on the occasion of his 65th birthday.     

Effect of structural changes on dielectric properties of gallium arsenide

Temperature and frequency dependence of dielectric permittivity and tangent of the dielectric loss angle are studied in epitaxial gallium arsenide structures. It is shown that nonmonotonic change in with temperature is caused by change in the volume of conductive gallium microinclusions and a difference between the structural perfection of the layer and substrate. The space charge relaxation time on inhomogeneities is evaluated (10^–5–10^–6 sec) and its contribution to GaAs dielectric properties is evaluated. An oscillation in dielectric permittivity upon heating is observed and explained.Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 18–21, February, 1989.     

Inelastic interactions of protons with photoemulsion nuclei at 4·5 GeV/c

In inelastic collisions of protons with photoemulsion nuclei at 4·5 GeV/c, data have been obtained on multiplicity of shower particles, energy spectrum of fast secondary protons with (2·5±0·1) GeV average energy, and energy spectrum of produced charged pions with (640±±50) MeV average energy. The multiplicity, angular distributions, and energy of particles arising from splitting target-nuclei are also determined: the proton spectrum is approximated by the power dependenceE ^- with=1·4±0·1. The distribution of protons and-mesons over rapiditiesy=0·5 In[(E+p)/(E–p)] have been obtained. The average multiplicity for secondary particles coincide with the predicted values given by the cascade-evaporation model.Dedicated to the 25th anniversary of the Joint Institute for Nuclear Research.The authors would like to express their gratitude to the synchrophasotron group of JINR and to the group of S. J. Ljubomilov for the assistance in the experiment, to V. S. Barashenkov and V. V. Ivanov for the assistance in the cascade-evaporation model calculations, and also to the laboratories which took part in the scanning and measurement.     

Effect of the defectiveness of a semiconductor on the characteristics of Pd-GaAs contacts

A study was made of the volt-ampere characteristics of Pd-GaAs Schottky barriers in relation to the defectiveness of the gallium arsenide. The defect content of the material was checked metallographically and by the method of x-ray topography. Single crystals of GaAs doped with Ge, Ge + Sb, and Ge + In were studied. Here, the electron concentration was (1–4) · 10¹⁵ cm^–3, and mean dislocation density ranged from 4·10⁴ to 2·10² cm^–2. The defectiveness of the material was altered by the introduction of different concentrations of isovalent impurities. It was shown that for diodes produced by the same technology, the manifestation of low-temperature VAC anomalies and the current mechanism are determined by structural features of the semiconductor (by dislocations and microdefects).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 90–95, July, 1988.     

Some photoelectric and electrical properties of copper-doped gallium arsenide

A study has been made of the conditions for the formation of impurity centers having an ionization energy E _v + 0.1 eV in copper-doped gallium arsenide. Photoconductivity is demonstrated at 10.6 . The results of the photoconductivity study are used to calculate the absorption coefficient and cross section for photon capture by these impurity centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 40–44, September, 1970.The authors thank V. N. Detinko, A. S. Petrov, and A. P. Vyatkin for constant interest in this study.     

Electrical and optical properties of titanium dioxide films

A method is described for producing insulating films of titanium dioxide by vacuum evaporation. Photomicrographs showing the growth of crystallites in the layer are presented, and X-ray and electron diffraction data are given. Sputtering regimes by means of which it is possible to produce compact layers of specific resistance 10¹³ ohm · · cm, dielectric strength 10⁶V/cm, and dielectric constant of 30 are given.By investigating optical density spectra and temperature variation of electrical conductivity for these specimens values were obtained for the optical and thermal forbidden band widths in titanium dioxide; these were 4.2 and 3.9 eV respectively. It was found that insulating films of titanium dioxide were completely transparent over a wide range of wavelengths from 300 to 1000 m. Using the same investigations in layers with electrical conductivity greater than 10^–13/ohm · · cm defects were discovered, which were connected with oxygen deficiency and gave three impurity energy levels in the forbidden band of titanium dioxide.In conclusion the authors would like to express their gratitude to Prof. K. V. Shalimova under whose guidance the work was executed.     

Drift mobility and diffusion with an electric field of Ba2+ ions in NaCl crystals

Using a carrier-free tracer¹³³Ba the temperature dependences of the diffusion coefficientD and mobility of Ba²⁺ ions in an electric field have been measured on NaCl crystals in the temperature range from 500 to 750 °C. It is shown that the obtained values ofD are not affected by an electric field (30 V/cm) and that the temperature dependence of the mobility of Ba²⁺ ions is given by(T)=(12·3±1·9) exp [-(1·51±0·09) eV/kT]. Vacancy jump frequencies near a Ba²⁺ ion and the Gibbs free energy of association of this ion with a vacancy have been calculated in terms of a simple 5-frequency model for impurity diffusion by a vacancy mechanism.     

Diffusion coefficient of selenium in indium antimonide

The diffusion of selenium in indium antimonide has been studied in the temperature range 400–490°C, by the method of removing layers. Two regions have been distinguished in the donor distribution profiles. The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (8·10¹⁸ cm^–3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (8·10¹⁶ cm^–3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·10¹³ exp(–4.1 eV/kT) cm²/sec, D₂=1.9·10¹³ exp(–3.9 eV/kT) cm²/sec.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 40–43, November, 1991.     

Gas formation in liquid in initial stages of a pulsed discharge

Gas formation in electrolytes with=10^–2–10^–4–1cm^–1, distilled water = 10^–5-1.5 ·10^{–6 –1}cm^–1, and chemically pure n-hexane in the initial stages of formation of discharge with rectangular voltage pulses of 0.67 and 1.85 sec duration is investigated. The experimental results are compared with the results of approximate calculations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 42–47, November, 1972.The authors thank V. V. Ryumin for taking part in the discussion of the results and V. V. Lopatin for participation in the experiments with electron-optical light amplifier.     

Electric and tensoelectric study of radiation defects in GaAs

The electric and tensoelectric properties are studied for GaAs crystals which have been irradiated by electrons (2.3 Mev) at 300°K with integrated fluxes of up to 2·10¹⁵ –1·10¹⁹ cm^–2. On the basis of the electrical neutrality equation, including seven energy levels (E1–E5, H0, H1) of the radiation defects, the specific resistivity and the strain sensitivity coefficient are quantitatively analyzed as a function of exposure. The pressure coefficients for the E1–E5 levels with respect to the _c ⁶ point are determined to be (0, 9.6, 11.0, 11.6, 11.6)·10^–6 eV/bar, respectively, at 300°K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1986.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.     

Charge Exchange of the Centers in Electron–Irradiated Zinc Selenide

The optical absorption induced by the photosensitive centers formed upon electron irradiation (E = 5 MeV, = 1.7·10¹⁸ cm^–2) of polycrystalline ZnSe has been studied. A comparison of the optical properties of the irradiated crystals with the known data for ZnS has allowed the assumption that the 496–, 563–, and 652–nm bands in ZnSe are associated with the anion vacancies being in different charge states. The ratio between the concentrations of the optical absorption centers in the crystals photoexcited at 80 K is determined by the electron traps participating in the processes of charge exchange of the vacancies.