Energy distribution of alkali-metal atoms under electron-stimulated desorption from the surface of oxidized refractory substrates

An analysis is made of experimental data on the dependence of the energy distributions of Li, Na, and Cs atoms emitted in electron-stimulated desorption on their concentration on the surface of oxidized tungsten and molybdenum substrates.     

Cross sections for electron-stimulated desorption of alkali-metal atoms from adlayers on oxidized tungsten

Earlier cross-section measurements of electron-stimulated desorption (ESD) of Li, Na, K, and Cs atoms from adlayers on oxidized tungsten are analyzed with respect to substrate temperature and degree of oxidation. It is conjectured that the ESD cross sections are determined by the ratio of the rates of neutral alkali-metal re-ionization on the surface and of relaxation of the O⁺ charge in the substrate. A comparison with experiment revealed the dependence of the re-ionization rate of an alkali-metal adatom on its size and mass, as well as the dependence of the O⁺ charge relaxation rate on substrate temperature and degree of oxidation. The relation of the charge relaxation time to the substrate band structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 1491–1497 (August 1997)     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Effect of deposition of samarium atoms on the electron-stimulated desorption of cesium and samarium atoms from the surface of tungsten coated by gold and cesium

It has been shown that deposition of Sm atoms on W(100) surface coated by several monolayers of gold and cesium affects noticeably the yield of Cs atoms in electron-stimulated desorption (ESD) from this surface. The measurements have been performed by the time-of-flight method with a surface-ionization detector. The paper reports on the first observation of ESD of Sm atoms from the tungsten surface coated by layers of gold and cesium. The ESD threshold for Sm atoms, E _e = 57 eV, coincides with that for Cs atoms and corresponds to the energy of the Au 5p _3/2 core level. The dependence of the ESD yield of Sm atoms on the bombarding electron energy E _e follows a resonance pattern in the form of a narrow peak located in the range 57 ≤ E _e ≤ 66 eV. Deposition of Sm atoms at room temperature (～300 K) reduces (by a factor of about two) the ESD yield of Cs atoms for 600 s, and deposition of Sm atoms at 160 K reduces the ESD of Cs atoms down to zero already for 270 s. This difference finds explanation in the study of the change the structure of the top layer of the (Au + Cs)/W surface coating undergoes under cooling of the surface from 300 to 160 K.     

电子关联对聚乙炔中激子类型的影响

在SSH哈密顿基础上引进电子关联,对反式聚乙炔链中光致激子的产生和演化过程实施分子动力学模拟。弱关联强度U取值0～1.250 eV,V =U/2取值0～0.625 eV .计算结果表明,关联强度的大小影响链中元激发类型,U＜0.555eV时产生的元激发为孤子-反孤子对,U ＞0.555eV 时产生的元激发为正负荷电极化子对。为进一步讨论该类型一维系统中不同类型激子的产生、输运、衰减等动态过程,关联强度U的选择提供参考。     

电子关联对聚乙炔中激子类型的影响

在SSH哈密顿基础上引进弱电子关联,对反式聚乙炔链中光致激子的产生和演化过程实施分子动力学模拟.弱关联强度参数U取值0～1.250 eV,V=U/2取值0～0.625 eV.计算结果表明,关联强度的大小影响链中元激发类型,U＜0.555 eV时产生的元激发为孤子-反孤子对,U＞0.555 eV时产生的元激发为正负荷电极化子对.为进一步讨论该类型一维系统中不同类型激子的产生、输运、衰减等动态过程,关联强度参数U的选择提供参考.     

The temperature dependence of Eu atom yield resonances in electron-stimulated desorption from oxidized tungsten

This paper reports on the first measurement of the intensity of the resonances in the yield of europium neutrals as a function of temperature observed in electron-stimulated desorption from tungsten surfaces oxidized to different degrees and having different europium coverages. The measurements were carried out by the time-of-flight method with a surface ionization detector. The temperature dependences obtained for resonances due to europium and tungsten core level ionization differ qualitatively. The relation is reversible for temperatures below the onset of europium thermal desorption.     

Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperature

The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al₂O₃ films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al₂O₃ film remains continuous even upon heating to 700°C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al₂O₃ film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.     

Temperature and concentration effects in electron-stimulated desorption of sodium atoms from sodium layers adsorbed on tungsten coated with a gold film

The yield and energy distributions of sodium atoms upon electron-stimulated desorption from sodium layers adsorbed on tungsten coated with a gold film are investigated for the first time as functions of the thickness of the gold film, the concentration of deposited sodium, and the surface temperature. It is found that the energy distributions exhibit two peaks, namely, a narrow peak with a maximum at about 0.15 eV, whose intensity continuously increases with increasing temperature, and a broad peak with a maximum at about 0.35 eV, whose intensity either decreases or remains constant with increasing temperature. It is shown that both peaks arise as a result of the same excitation, which gives rise to different channels of electron-stimulated desorption of sodium atoms. Possible mechanisms of electron-stimulated desorption and the kinetics of destruction of the surface coating are discussed.     

Relation between the temperature dependence of the ion yield and the nature of their initial motion in electron-stimulated desorption

A relaxation model of electron-stimulated desorption is used to study the influence of the reverse motion of ions on the temperature dependence of their yield. These results can be used to explain experiments on the desorption of sodium ions from a tungsten surface covered with a monolayer silicon film. Zh. Tekh. Fiz. 7, 77–81 (November 1997)     

Quantum-resolved angular distributions of neutral products in electron-stimulated processes: desorption of CO from Pt(111)

The first quantum-resolved angular distribution measurements of electronically-excited neutral molecules which have undergone electron stimulated desorption (ESD) are presented. Two-dimensional imaging of laser resonance-enhanced multiphoton ionization (REMPI) is used to obtain angular distributions of CO^* in the v=0 vibrational level of the metastable a³Π_r state desorbed from CO/Pt(111) by 350 eV electrons. For saturation CO coverages at 90 K, sharp Gaussian distributions peaked about the surface normal (6° ± 0.5° half-width at half maximum) are observed, consistent with previously reported data acquired by ESDIAD (ESD ion angular distributions). The (1 + 1) photon REMPI scheme for state-specific CO^* detection involves the b³Σ(v = 0) ← a³Π(v = 0) transition at 283 nm, followed by photoionization at the same wavelength. In this paper, the overall experimental technique for REMPI imaging of products from electron stimulated processes is discussed. Thus specific CO^* data as a function of coverage and temperature is presented for comparison with the ESDIAD results.     

On the isotope effect in the relaxation model of electron-stimulated desorption

The dependence of the ESD yield of ions on their mass has been studied. The influence of short-range electronic-shell repulsion on the isotope effect is discussed. The isotope effect is shown to be depressed with increasing non-Coulombic initial velocity. Fiz. Tverd. Tela (St. Petersburg) 40, 764–767 (April 1998)     

Investigation of interaction between lithium and tantalum under a silicon film coating by electron-stimulated desorption technique

The electron-stimulated desorption of Li⁺ ions from lithium layers adsorbed on the tantalum surface coated with a silicon film has been investigated. The measurements are performed using a static magnetic mass spectrometer equipped with an electric field-retarding energy analyzer. The threshold of the electron-stimulated desorption of lithium ions is close to the ionization energy of the Li 1s level. The secondary thresholds are observed at energies of about 130 and 150 eV. The threshold at an energy of 130 eV is approximately 30 eV higher than the ionization energy of the Si 2p level and can be associated with the double ionization. The threshold at 150 eV can be caused by the ionization of the Si 2s level. It is demonstrated that the yield of Li⁺ ions does not correlate with the silicon amount in near-the-surface region of the tantalum ribbon and drastically increases at high annealing temperatures. The dependence of the current of Li⁺ desorption on the lithium concentration upon annealing of the tantalum ribbon at T>1800 K exhibits two maxima. The ions desorbed by electrons with energies higher than 130 and 150 eV make the largest contribution to the current of lithium ions after the annealing. The yield of lithium ions upon ionization of the Li 1s level at an energy of 55 eV is considerably lesser, but it is observed at higher concentrations of deposited lithium. The results obtained can be interpreted in the framework of the Auger-stimulated desorption model with allowance made for relaxation of the local surface field.     

Application of synchrotron radiation to investigation of the mechanism of increase in the yield of alkali metal ions in electron-stimulated desorption

Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si⁺ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na⁺ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f _7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X ₀ and, hence, to an increase in the yield of Na⁺ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na⁺ yield in electron-stimulated desorption.     

Study of lithium adsorption on the TiO2 surface by electron-stimulated desorption

This paper reports on a study of electron-stimulated desorption (ESD) of O⁺ and Li⁺ ions from titanium dioxide as a function of the preheating temperature T and of the concentration of lithium adsorbed at 300 K, which was carried out with a static magnetic mass spectrometer combined with a retarding-field energy analyzer. For T>1500 K, the TiO₂ surface undergoes irreversible rearrangement. At temperatures from 300 to 900 K and at lithium coverages Θ<1, the ESD cross sections of the O⁺ and Li⁺ ions vary in a reversible manner with temperature, while for lithium coverages Θ>1, the changes in the Li⁺ and O⁺ ESD cross sections become irreversible. For θ<1, the appearance threshold of the Li⁺ and O⁺ ions is 25 eV, whereas for θ>1, the ESD threshold of Li⁺ ions shifts to 37 eV.     

Effect of exchange interaction on the spin fluctuations of localized electrons

A microscopic theory of spin fluctuations in an ensemble of electrons localized on donors in a bulk semiconductor has been developed. Both the hyperfine interaction of the electron spin with spins of host lattice nuclei and the exchange interaction between the electrons have been taken into account. A model of clusters to calculate spin noise spectra of the ensemble of localized charge carriers has been proposed. It has been shown that the electron-electron exchange interaction leads to an effective averaging of random nuclear fields and a shift of the peak in the spin-fluctuation spectrum towards lower frequencies.     

Effect of surface charge on laser-induced neutral atom desorption

When an ionic metal oxide crystal is cleaved, inhomogeneous electrical charging of the surface can be a result. Such an effect has been well documented in magnesium oxide (100). For example, recent rigorous AFM studies indicate that nanoscale charged clusters of MgO are created during cleavage, with high concentrations often located at terrace step edges (Barth and Henry in J. Phys. Chem. C 113:247, 2009). In addition, ablation processes of freshly cleaved magnesium oxide crystals may be effected by remnant surface charging and microstructures (Stoneham et al. in Appl. Phys. A 69:S81, 1999). We report here that such surface charging strongly impacts neutral atom desorption, even under conditions of extremely mild excitation of surface terrace features. In our experiments, single-crystal MgO (100) is cleaved in air and placed in an ultra-high vacuum chamber (UHV). We irradiate the crystal at 6.4 eV, photon energy resonant with five-coordinated (5-C) terrace sites and probe desorbing neutral oxygen atoms. It is found that a significant fraction of desorbed neutral oxygen atoms from the charged surface possess kinetic energies in excess of 0.7 eV. This is in contrast to uncharged samples (discharged in vacuo over 24 hours) that display a near-thermal oxygen atom distribution.