高反射率Mo/B4C多层膜设计及制备

运用遗传算法优化设计了Mo/B4C多层膜结构。入射光入射角度取10°时,设计的理想多层膜膜对数为150,周期为3.59 nm,Gamma值（Mo膜厚与周期的比值）为0.41,峰值反射率为33.29%。采用恒功率模式直流磁控溅射方法制作Mo/B4C多层膜。通过在Mo/B4C多层膜与基底之间增加15 nm厚的Cr粘附层,提高多层膜与基底的粘附力。另外,还采用调整多层膜Gamma值的方法减小其内应力,调整后多层膜结构周期为3.59 nm, Mo膜厚1.97 nm, B4C膜厚1.62 nm,峰值反射率26.34％。制备了膜对数为150的Mo/B4C膜并测量了其反射率,在波长7.03 nm处,Mo/B4C多层膜的近正入射反射率为21.0％。最后对测量结果进行了拟合,拟合得到Mo/B4C多层膜的周期为3.60 nm,Gamma值0.60,界面粗糙度为0.30 nm。     

Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods

X-ray multilayer mirrors of period ranging from 9.6 to 1.7 nm, deposited using ion beam sputtering, have been examined using grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction. Detailed analysis of GIXRR data revealed that significant amount of re-sputtering of Si layer takes place while W deposition is underway. Re-sputtering is mainly due to bombardment of high-energy neutrals getting reflected from the W target. Due to re-sputtering interface of the multilayer becomes asymmetric. This puts a major hindrance in avoiding the intermixing and achieving sharp interfaces at shorter periods. Maximum thickness of Si which gets lost due to re-sputtering during deposition is ∼0.8 nm. The shortest period multilayer estimated, that could be deposited without intermixing, was 2.7 nm. These results are of significance for developing low period W/Si multilayers.     

高反射率Mo/B4C多层膜设计及制备

 运用遗传算法优化设计了Mo/B₄C多层膜结构。入射光入射角度取10°时,设计的理想多层膜膜对数为150,周期为3.59 nm,Gamma值（Mo膜厚与周期的比值）为0.41,峰值反射率为33.29%。采用恒功率模式直流磁控溅射方法制作Mo/B₄C多层膜。通过在Mo/B4C多层膜与基底之间增加15 nm厚的Cr粘附层,提高多层膜与基底的粘附力。另外,还采用调整多层膜Gamma值的方法减小其内应力,调整后多层膜结构周期为3.59 nm, Mo膜厚1.97 nm, B4C膜厚1.62 nm,峰值反射率26.34％。制备了膜对数为150的Mo/B₄C膜并测量了其反射率,在波长7.03 nm处,Mo/B₄C多层膜的近正入射反射率为21.0％。最后对测量结果进行了拟合,拟合得到Mo/B₄C多层膜的周期为3.60 nm,Gamma值0.60,界面粗糙度为0.30 nm。     

50~110 nm波段高反射率多层膜的设计与制备

阐述了50~110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成，每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比，这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜，并以此为初始条件通过Levenberg-Marquart优化方法完成了50~110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计，其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试，测试结果表明制作出的多层膜结构与设计结构基本相符.     

低温退火的X射线W/Si多层膜应力和结构性能

W/Si多层膜反射镜在硬X射线天文望远镜中有重要应用. 为减小其应力对反射镜面形和望远镜分辨率的影响, 同时保证较高的反射率, 采用150, 175和200 ℃ 的低温退火工艺对采用磁控溅射镀制的W/Si周期多层膜进行后处理. 利用掠入射X射线反射测试和样品表面面形测试对退火前后W/Si多层膜的应力和结构进行表征. 结果表明, 在150 ℃ 退火3 h 后, 多层膜1级峰反射率和膜层结构几乎没有发生变化, 应力减少约27%; 在175 ℃ 退火3 h后, 多层膜膜层结构开始发生变化, 应力减少约50%; 在200 ℃退火3 h 后, 多层膜应力减小超过60%, 但1级布拉格峰反射率相对下降17%, 且膜层结构发生了较大变化. W, Si界面层的增大和相互扩散加剧是应力和反射率下降的主要原因.     

Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing

The e-beam deposited multilayers (MLS) were studied under rapid thermal annealing (RTA) between 250°C and 1000°C during 30 s. MLS with five Co/Si/W/Si periods, each 13.9 nm (MLS1) and 18 nm (MLS2) were deposited onto oxidized Si substrates. Samples were analyzed by X-ray diffraction, hard and soft X-ray reflectivity measurements and grazing incidence X-ray diffuse scattering. The MLS period, interface roughness and its lateral and vertical correlations were obtained by simulation of the hard X-ray reflectivity and diffuse scattering spectra. The MLS1 with thinner Co layers is more temperature resistant. However, its soft X-ray reflectivity is smaller. The results show that this is because of shorter lateral and vertical correlation lengths of the interface roughness which may considerably influence the X-ray reflectivity of multilayers.     

Development of Al-based multilayer optics for EUV

We report on the development of multilayer optics for the extreme ultra-violet (EUV) range. The optical performance of Al-based multilayer mirrors is discussed with regard to promising reflectivity and selectivity characteristics and the problems of the interfacial roughness for this type of multilayers. We demonstrate a possibility to reduce the average roughness by introducing additional metal layer (W or Mo) rather than depositing a buffer layer at each interface. We have prepared and tested Al/SiC, Al/W/SiC and Al/Mo/SiC multilayers of various periods for the spectral range from 15 to 40 nm, which is the range of increasing interest for high-order harmonic generation, synchrotron radiation and astrophysics. The structure of the three-component systems has been optimized in order to obtain the best reflectivity for each wavelength within the spectral range. We have shown that introduction of refractory metal in Al-based periodic stack can improve the optical performance of multilayer reflecting coatings designed for the EUV applications.     

短波长软X射线多层膜高级次峰设计与制备

考虑了短波长软X射线多层膜的设计问题，比较了一、二、三级布喇格衍射峰设计的反射率结果，分析了反射率与周期厚度及金属层在周期中的比率的关系．本文认为，在存在不连续金属膜层的情况下，用布喇格衍射峰的二级次设计，有助于获得实测的反射率．给出了利用磁控溅射方法沉积的Mo/Si多层膜在4.47nm处同步辐射测量，在60°入射角下获得8.5%实测反射率的结果． 关键词：     

Thermal cycles, interface chemistry and optical performance of Mg/SiC multilayers

The interplay between optical performance and the thermally activated interface chemistry of periodic Mg/SiC multilayers designed for application at 30.4 nm are investigated by optical (hard X-ray, soft X-ray and ultraviolet ranges, i.e. from 0.154 to 30.4 nm) reflectivity and X-ray emission spectroscopy. The multilayers are prepared by magnetron sputtering and then annealed up to a temperature of 500 °C. Two clear changes take place in the multilayer upon annealing. At first, between 200 and 300 °C a strong decrease of the reflectivity is observed, due to the development of interfacial roughness following the crystallization of the Mg layers. No interfacial compound is detected. Then, between 350 and 400 °C there is formation of the Mg₂Si magnesium silicide at the interfaces following the reaction between the Mg and SiC layers. This also leads to the almost total loss of reflectivity of the multilayer. Thus, this kind of multilayer is thermally stable only for application requiring no heating above 200 °C.     

Mo/B4C软X射线多层膜结构特性研究

在6.7<λ<10.0nm波段选择Mo/B₄C作为多层膜材料,并采用磁控溅射法制备出多层膜样品.这些多层膜样品的周期结构为3.35nm～5.52nm.采用X射线衍射仪和透射电镜(TEM)对样品的微观结构进行研究.结构表明,这些多层膜样品的结构质量很高,并有很好的热稳定性.     

Terbium-based extreme ultraviolet multilayers

We have fabricated periodic multilayers that comprise either Si/Tb or SiC/Tb bilayers, designed to operate as narrowband reflective coatings near 60 nm wavelength in the extreme ultraviolet (EUV). We find peak reflectance values in excess of 20% near normal incidence. The spectral bandpass of the best Si/Tb multilayer was measured to be 6.5 nm full width at half-maximum (FWHM), while SiC/Tb multilayers have a more broad response, of order 9.4 nm FWHM. Transmission electron microscopy analysis of Si/Tb multilayers reveals polycrystalline Tb layers, amorphous Si layers, and relatively large asymmetric amorphous interlayers. Thermal annealing experiments indicate excellent stability to 100 degrees C (1 h) for Si/Tb. These new multilayer coatings have the potential for use in normal incidence instrumentation in a region of the EUV where efficient narrowband multilayers have not been available until now. In particular, reflective Si/Tb multilayers can be used for solar physics applications where the coatings can be tuned to important emission lines such as O V near 63.0 nm and Mg X near 61.0 nm.     

Influence of Beryllium Barrier Layers on the Properties of Mo/Si Multilayer Mirrors

Technical Physics - The performance of multilayer Mo/Si mirrors with B4C and Be spacers near a wavelength of 13.5&nbsp;nm has been studied. It has been shown that four-component Mo/Be/Si/B4C...     

软X射线Mo/B4C多层膜应力和热稳定性研究

为了实现7 nm波段Mo/B4C多层膜反射镜元件的制备,研究了不同退火方式对Mo/B4C多层膜应力和热稳定性的影响。首先,采用直流磁控溅射方法分别基于石英和硅基板制作Mo/B4C多层膜样品,设计周期为3.58 nm、周期数为60,Mo膜层厚度与周期的比值为0.4。其次,采用不同的退火方式对所制作的样品进行退火实验,最高退火温度500 ℃。最后,分别采用X射线掠入射反射、X射线散射和光学干涉仪的方法对退火前后的Mo/B4C多层膜的周期、界面粗糙度和应力进行测试。测试结果表明采用真空退火方式能够有效降低Mo/B4C多层膜的应力,且退火前后Mo/B4C多层膜的周期和界面粗糙度无明显变化,证明Mo/B4C多层膜在500 ℃以内具有很好的热稳定性。     

磁控溅射制备极紫外高反射率多层膜应力研究

为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo_2C/B_4C,Mo/B_4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo_2C,B_4C,单层膜,周期厚度为3.5 nm,30对的Mo_2C/B_4C,Mo/B_4C周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo_2C/B_4C多层膜压应力要远小于Mo/B_4C多层膜,且成膜质量与Mo/B_4C相当。因此Mo_2C/B_4C是应用于6.7 nm反射镜较好的多层膜材料组合。     

磁控溅射制备极紫外高反射率多层膜应力研究

为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo2C/B4C,Mo/B4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo2C,B4C单层膜,周期厚度为3.5 nm,30对的Mo2C/B4周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo2C/B4C多层膜压应力要远小于Mo/B4C多层膜,且成膜质量与Mo/B4C相当。因此Mo2C/B4C是应用于6.7 nm反射镜较好的多层膜材料组合。C,Mo/B4C     

一种软X射线多层膜界面粗糙度的计算方法

提出一个利用多层膜小角X射线衍射谱衍射峰积分强度计算多层膜界面粗糙度的公式。用磁控溅射技术制备Mo／Si多层膜，用波长为0．154nm的硬X射线测量样品在小掠入射角区的衍射曲线，分别用本文公式和反射率曲线拟合方法计算了样品的界面粗糙度。实验结果表明：由本文公式获得的界面粗糙度近似于拟合方法获得的界面粗糙度，它们略等于多层膜界面实际粗糙度。     

提高极紫外光谱纯度的多层膜设计及制备

极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160～240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。     

Structural and magnetic properties of Co-C composite films and Co/C multilayer films

CoC composite films and Co/C multilayer films have been prepared by a method incorporating ion beam sputtering and plasma chemical vapor deposition. It has been found that the structure and magnetic properties of both the Co-C composite and the Co/C multilayer films depend strongly on the substrate temperature during deposition. The Co-C composite film deposited at room temperature is amorphous, with relatively low saturation magnetization and coercivity. On the other hand, the film deposited at 250 °C is composed of fine Co crystallites separated by amorphous C or Co-C phase. As a result, both the saturation magnetization and coercivity are increased compared with the film deposited at room temperature. When deposited at room temperature, the Co/C multilayer film exhibits good periodicity, with a period of 70 nm (Co: 40 nm, C: 30 nm) and sharp and flat Co-C interfaces. High magnetization (602 emu/cm³) and low coercivity (1.6 Oe) are obtained for such a film. However, increasing the substrate temperature to 250 °C was found to be detrimental to the magnetic properties due to the formation of cobalt carbide at the Co-C interface. Received: 11 July 2000 / Accepted: 13 July 2000 / Published online: 30 November 2000     

软X射线Mo/B_4C多层膜应力和热稳定性研究

为了实现7nm波段Mo/B4C多层膜反射镜元件的制备,研究了不同退火方式对Mo/B4C多层膜应力和热稳定性的影响。首先,采用直流磁控溅射方法分别基于石英和硅基板制作Mo/B4C多层膜样品,设计周期为3.58nm、周期数为60,Mo膜层厚度与周期的比值为0.4。其次,采用不同的退火方式对所制作的样品进行退火实验,最高退火温度500℃。最后,分别采用X射线掠入射反射、X射线散射和光学干涉仪的方法对退火前后的Mo/B4C多层膜的周期、界面粗糙度和应力进行测试。测试结果表明采用真空退火方式能够有效降低Mo/B4C多层膜的应力,且退火前后Mo/B4C多层膜的周期和界面粗糙度无明显变化,证明Mo/B4C多层膜在500℃以内具有很好的热稳定性。     

Interface characteristics of Mo/Si and B4C/Mo/Si multilayers using non-destructive X-ray techniques

A methodology combining non-destructive X-ray techniques is proposed to study the interfacial zones of periodic multilayers. The used X-ray techniques are X-ray emission spectroscopy induced by electrons and X-ray reflectivity in the hard and soft X-ray ranges. The first technique evidences the presence of compounds at the interfaces and gives an estimation of the thickness of the interfacial zone. These informations are used to constrain the fit of the X-ray reflectivity curves that enables to determine the thickness and roughness of the various layers of the stacks. The results are validated in the soft X-ray range where the reflectivity curves are very sensitive to the chemical state of the elements present in the stack. The methodology is applied to characterize Mo/Si (1-4 nm/2 nm) and B₄C/Mo/Si (1 nm/2 nm/2 nm) multilayers. It is shown that the two interfacial zones of the Mo/Si multilayers are composed of the silicides MoSi₂ and Mo₅Si₃. It is found that the interface thickness is about to be 0.4-0.8 nm depending on the samples. The molybdenum silicides are also evidenced at the interfaces of the B₄C/Mo/Si multilayers. However, their interface thickness is 0.2 nm thinner than that of the same stack without the B₄C layers, these layers being at the Mo-on-Si side or at the Si-on-Mo side. Thus, the B₄C layers do not stop but only reduce the interdiffusion between the Mo and Si layers.