Atomic dipole moment distribution of Si atoms on a Si111-(7 x 7) surface studied using noncontact scanning nonlinear dielectric microscopy

A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7 x 7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7 x 7) surface is measured. At the weak applied voltage of -0.5 V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.     

A broadband polymeric foil transducer

If a 0.001 in (0.025 mm) thick foil of polyethylene teraphthalate is metallized upon one side and a dc voltage is applied to the metallizing, then the foil will adhere firmly by electrostatic attraction to any conducting surface. In acoustic emission experiments with such a foil as a capacitance detector it was observed that by cycling the polarizing voltage it was possible to increase the sensitivity of the device until it was only 30 dB below that of a damped pzt transducer. Such an enhanced response probe has been found to have a frequency response which is flat from 10 kHz to 5 MHz. It also has the advantages of being lightweight; needs no coupling agent when applied to conducting substrates; is stable over long periods; can be made in any shape or array of shapes and will conform to curved surfaces     

Determination of the Dipole Moment of O-18 Methanol by Microwave Stark Spectroscopy

In this paper we report accurate measurements of microwave (MW) frequencies for nine different transitions in the first four torsional states in the ground vibrational state of O-18 substituted methanol, for a wide range of applied dc electric field. The Stark-shifted frequencies were measured with accuracies of about ±10 kHz. The results were analyzed to deduce accurate dipole moment values for the four torsional states involved. Substantial variation of dipole moment was observed as a function of the torsional state. The zero field frequencies have been also determined with much better precision than known before. The dipole moment values for the torsional ground state have been determined to be μ_a= 0.8992(8) and μ_b= 1.4226(3) D. The dipole moment value increases with torsional excitation. These values will be useful for the evaluation of relative intensities of interstellar microwave and millimeter wave transitions and optically pumped far infrared laser lines.     

Electronic spin drift in graphene field-effect transistors

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.     

陡化前沿Marx发生器的阻抗特性

 利用50 kV无感电容器与固体电阻制作了10级陡化前沿Marx发生器,实现了电容储能型脉冲功率调制系统的小型化。使用不同阻值的水电阻负载研究了发生器的阻抗特性,并进一步制作了金属膜电阻负载进行实验,测定90 Ω负载可以使发生器处于临界阻尼放电状态,从而确定发生器的内部阻抗约为45 Ω。当充电电压为40 kV时,在金属膜电阻负载上得到了幅值约为210 kV,脉宽约为40 ns,前沿约为5 ns的快前沿高压脉冲。利用此发生器成功地驱动了强流二极管,当二极管阴阳极间距为15 mm时,在30 kV充电情况下,其输出电压约为154 kV,束流约为1 kA。     

碳纤维阴极的场致发射特性实验研究

 研究了具有一定导电性能的碳纤维的直流场致发射电子束特性,实验分别在大气环境、低真空（10^-1 Pa）及高真空(10^-5 Pa)环境下进行。实验结果表明,碳纤维具有一定的场致发射能力,并且发射特性和发射环境的真空度密切相关。在大气环境下,发射电子束流与所施加的电压符合Fowler-Nordheim关系,当电压为7 kV,电流为61.4 μA时,根据Fowler-Nordheim定理推算出碳纤维场致发射场增强因子为3.75×10⁵。在低真空条件下阳极只收集到微弱的电流;在高真空条件下,阴极发射明显,在较低电压下就能观测到阳极电流,放电前阳极最高电流是大气条件下的3~4倍,发射的束流大小和所施加在尖端的电压关系接近Child-Langmiur定律。     

强外电场作用下二甲基硅酮的分子结构和激发态

采用密度泛函(DFT)方法B3P86在6 311++G(d,p)基组水平上优化得到了分子轴方向不同电偶极 场(-0.04～0.04a.u.)作用下,二甲基硅酮的基态电子状态、几何结构、电偶极矩和分子总能量.在优化构型下 用同样的基组采用杂化CIS DFT方法(CIS B3P86)研究了同样外电场条件下对二甲基硅酮的激发能和振子强度 的影响.计算结果表明,分子几何构型与电场大小和方向呈现强烈的依赖,正向电场下基态偶极矩随电场强度线 性增加,分子总能量降低,当反向电场大于0.03a.u.时,偶极距方向改变,总能量增加;激发能随电场增加急剧减 小,且对电场方向的依赖呈现出不对称性,满足Grozema关系.电场对振子强度的影响比较复杂,但仍满足跃迁选 择定则.     

Limit on the electron electric dipole moment in gadolinium-iron garnet

A new method for the detection of the electron electric dipole moment (EDM) using a solid is described. The method involves the measurement of a voltage induced across the solid by the alignment of the sample's magnetic dipoles in an applied magnetic field, H. A first application of the method to GdIG has resulted in a limit on the electron EDM of 5 x 10(-24)e cm, which is a factor of 40 below the limit obtained from the only previous solid-state EDM experiment. The result is limited by the imperfect discrimination of an unexpectedly large voltage that is even upon the reversal of the sample magnetization.     

dc Magnetic field generated by an electric dipole antenna in an anisotropic plasma

dc magnetization generated by an ac electric dipole in a magnetized plasma is considered. The main result is the expression of the induced dc magnetic field in a system with axial symmetry. It has a general form valid for any ac source with the same symmetry.     

Photogalvanic effects in topological insulators

We discuss optical absorption in topological insulators and study possible photoelectric effects theoretically. We found that absorption of circularly polarized electromagnetic waves in two-dimensional topological insulators results in electric current in the conducting 1D edge channels, the direction of the current being determined by the light polarization. We suggest two ways of inducing such a current: due to magnetic dipole electron transitions stimulated by irradiation of frequency below the bulk energy gap, and due to electric dipole transitions in the bulk at frequencies larger than the energy gap with subsequent capture of the photogenerated carriers on conducting edge states.     

Analysis of electrostatic discharge suppressors with ultra-low capacitance used for IC protection

The TDMM was successfully used to analyze the capacitance, the electric field, and the ESD current of an ESD suppressor. The obtained capacitance was also validated by measurement data. It is found that the maximum electric fields in the air gap between two discharge electrodes for the air gap width of 5–50 μm are much higher than the threshold electric field for air breakdown. A maximum ESD current of 4.7 mA was obtained during an ESD event, which may be sufficient to cause a malfunction in a high sensitivity integrated circuit.     

Ferromagnetic resonance observation of a phase transition in magnetic field-aligned Fe2O3 nanoparticles

Fe₂O₃ hematite (alpha) nanoparticles suspended in the liquid phase of the liquid crystal 4,4-azoxyanlsole (PAA) are cooled below the freezing temperature (397 K) in a 4000 G dc magnetic field. The in field solidification locks the direction of maximum magnetization of the particles parallel to the direction of the applied dc magnetic field removing the effects of dynamical fluctuations of the nanoparticles on the magnetic properties allowing a study of the intrinsic magnetic properties of the nanoparticles as well as the anisotropic behavior of the ferromagnetic resonance (FMR) signal. Freezing in PAA allows temperature-dependent measurements to be made at much higher temperature than previous measurements. The field position, line width and intensity of the FMR signal as a function of temperature as well as the magnetization show anomalies in the vicinity of 200 K indicative of a magnetic transition, likely the previously observed Morin transition shifted to lower temperature due to the small particle size. Weak ferromagnetism is observed below T_c in contrast to the bulk material where it is antiferromagnetic below T_c. The Raman spectrum above and below 200 K shows no evidence of a change in lattice symmetry associated with the magnetic transition.     

二氢化钚分子激发态结构的外场效应

采用密度泛函(DFT)方法B3LYP/Gen，在Pu为SDD基组、H为6-311++G^**基组水平上优化得到了分子轴方向不同电偶极场(-0.005—0.005a.u.)作用下，二氢化钚的基态电子状态、几何结构、电偶极矩和分子总能量.在优化构型下用同样的基组采用含时密度泛函(TDDFT)方法(TD-B3LYP)研究了同样外电场条件下对二氢化钚的激发能和振子强度的影响.计算结果表明，分子几何构型与电场大小和方向呈现较强的依赖，电场强度增加基态偶极矩随电场强度线性增加，H-Pu-H的角度线性减小，分子总能量线性减小；激发能随电场强度增加而减小，且对电场方向的依赖呈现近似对称性，满足Grozema关系.电场对振子强度的影响比较复杂，但仍满足跃迁选择定则. 关键词： 二氢化钚 激发态 电偶极场 TD-DFT     

Experimental Investigation of Low-Current Vacuum Arc Instabilities

The instabilities of 50-Hz low-current vacuum arcs and chopping phenomena were investigated in a test circuit where current was limited either by a resistor or an inductance. Employing a special test method which was developed for statistical evaluation, current zeros were measured oscillographically with a time sweep of 50 to 100 ns/div for durations of ? 60 div. The effects observed are quantitatively better to assess than with other techniques. It was found that each chopping process is initiated by a partial arc extinction (which as a rule occurs within less than 10 ns). One of the dominant factors of the whole process is the speed of recovery of the contact material. Copper contacts showed a much faster recovery and thus higher chopping currents than contacts of copper-tungsten. Furthermore, that current value at which the first instability occurs was measured as weli as the corresponding chopping current. Both values were evaluated statistically. In agreement with previous findings the occurrence of the first instability turned out to be independent of the capacitance parallel to the switching gap. However, the chopping current showed a significant dependence on the capacitance, as is well known from earlier investigations.     

Observation of self-diffraction by gratings in nematic liquid crystals doped with carbon nanotubes

Diffraction gratings were studied in cells of the homogeneously aligned liquid-crystal E7 doped with multiwall carbon nanotubes. These phase gratings were induced by interference modulation of two coherent optical beams, in conjunction with an applied dc field that was perpendicular to the unperturbed director axis. Self-diffraction was observed at all angles of incidence of the writing beams, including normal incidence. A superior nonlinear-index coefficient of 5x10(-2)cm(2)/W was obtained after passage of a 44-mW/cm(2) beam through a film with a grating constant of 18 mum under an external voltage of 15 V. The observed phenomenon depends strongly on the applied dc field, and the memory effect in a nematic film depends strongly on the grating constant.     

交变磁场作用下高温超导体温度变化研究

高温超导体在交变的磁场作用下,由于磁通的运动引起能量损耗,损耗的能量一部分通过超导体表面传递到冷却剂中,另一部分将使得超导体的温度升高。文中用数值的方法研究了外加磁场速度在0.0005T/s—5T/s变化情况下超导体的温度变化;当外磁场的速度由小到大变化时,超导板的状态会发生从稳定→不稳定(磁通跳跃)→稳定的变化;慢变磁场作用下超导体的温度在接近冷却剂温度的温区作微幅的周期性变化,当外加磁场速度比较大时,超导体发生磁通跳跃,温度也呈跳跃性变化,进一步加大外磁场速度,磁通和温度呈准周期的振荡型变化,而且振荡幅值随外磁场速度的增加逐渐减小,最后振荡消失,超导体在更高的温区稳定运行,温度呈周期性变化。     

Magneto-chiral birefringence and dichroism of diamagnetic molecular system at longitudinal electric saturation

Measurements of magneto-chiral birefringence and magneto-chiral dichroism at electric saturation, caused by a dc electric field applied parallel to the measuring beam, are shown to permit the determination of components of the magnetic dipole and electric quadrupole polarizabilities of diamagnetic macromolecules.     

偶极电场作用下β-ZnS分子结构和发光特性

采用密度泛函(B3P86/6-311g**)方法研究了偶极电场作用下β-ZnS发光影响,发现β-ZnS最高占据轨道(KSHOMO)与最低占据轨道(KSLUMO)能隙是1.973 9～1.467 6 eV,而采用HFSCF方法能隙大于7.789 2eV.适当强度外电场作用下β-ZnS分子的受激发射波长与实验值吻合较好,说明β-ZnS分子具有受激发射的发光特性.x     

Electron trapping levels in silicon dioxide thermally grown on silicon

Photocurrents associated with optical release of photoinjected electrons trapped in thin films of amorphous silicon dioxide have been studied. Temporal and spectral variation of the photocurrents were examined in detail: the effects on spectrally resolved response caused by variations in applied electrical field, wavelength sweep rate, and optical belaching are reported. All measurements were made on metal-oxide-semiconductor capacitors. The experiments were interpreted in terms of a straightforward model of optical excitation and transport of electrons out of localized energy levels in the silicon dioxide band gap. Semi-quantitative analysis indicated that a distribution of states peaked approximately 2·1 eV below the conduction band edge was associated with an electron trapping center distributed rather uniformly throughout the oxide film. In the wet thermal oxide specimens examined, the average density of trapping centers was greater than 10¹⁴ cm⁻³. A time-stable spread in energy of approximately 0·5 eV was measured, and was attributed to local disorder in the amorphous insulator. The existence of an optically inactive charge distribution in the oxide films, with bulk average density greater than 10¹⁵ cm⁻³, was indicated by collected charge vs. applied field data.