Effect of piezomagnetism on coupling of electric and magnetic domain walls in hexagonal manganites

The profiles of antiferromagnetic domain walls in hexagonal manganites RMnO₃ are obtained numerically depending on anisotropy and internal strain due to the lattice distortion at the ferroelectric domain walls. It is found that the piezomagnetism can lower the free energy of the system thus it favors the coupling between electric and magnetic domain walls. Due to the piezomagnetic effect, the clamped antiferromagnetic domain walls with spin orientation angle ψ changing from 0 to π have different profiles comparing with those of ψ changing from 0 to -π, and the former is energetically more favorable than the latter when the internal strain is tensile at the FEL domain walls while it is the contrary for compressive strain. Moreover, the strongest coupling between the FEL domain walls and the favorable AFM domain walls can be achieved at an optimized internal strain.     

Thin <Emphasis Type="Italic">W</Emphasis>′ and <Emphasis Type="Italic">W</Emphasis> domain walls in ferroelastic Pb<Subscript>3</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript>

A model of ferroelastic domain walls consisting of matching interlayers of crystal lattices is proposed. The dependences of the parameters of the interlayers and of the parameters of the equations for W′ and W domain walls on the crystal lattice parameters of the ferroelastic phase in Pb₃(PO₄)₂ are determined. The problem concerning the number of possible orientational states and their interaction in a polydomain crystal is considered.     

Kinetics of magnetization reversal in a heterophase nanomagnet with spatially modulated anisotropy

Magnetization reversal modes in a thin-film NiFeCuMo ferromagnet (FM) with periodically varying in-plane anisotropy are studied by the magneto-optical indicator film (MOIF) technique. The uni-directional anisotropy in FM regions exchange-coupled to a FeMn antiferromagnet (AFM) film in the form of square mesh stripes is alternated by the uniaxial anisotropy in the FM regions inside this mesh. It is shown that the boundaries formed along the edges of these stripes, which separate FM regions with different anisotropy, crucially influence the kinetics of domain-structure transformation in both types of FM regions. It is established that the lateral exchange anisotropy in the ferromagnet, which is determined by the stabilization of the spin distribution in the FM layer along the FM-(FM/AFM) interface, leads to the asymmetry of the magnetization reversal in FM regions bordered with an FM/AFM structure. Anisotropy of the mobility of 180-degree “charged” and “uncharged” domain walls situated, respectively, perpendicular and parallel to the unidirectional anisotropy axis is revealed. The difference observed between the mobilities of charged and uncharged domain walls is attributed to the difference in the spin distribution in these walls with respect to the unidirectional anisotropy axis and is a key factor for the difference between the magnetization reversal kinetics in horizontal and vertical exchange-biased FM stripes. Drastic differences are revealed in the asymmetry of magnetization reversal processes in mutually perpendicular narrow stripes of FM/AFM structures. Possible mechanisms of magnetization reversal in low-dimensional FM-(FM/AFM) heterostructures are discussed with regard to the effect of domain walls localized on the edges of AFM layers.     

Domain wall orientation in magnetic nanowires

Scanning tunneling microscopy reveals that domain walls in ultrathin Fe nanowires are oriented along a certain crystallographic direction, regardless of the orientation of the wires. Monte Carlo simulations on a discrete lattice are in accordance with the experiment if the film relaxation is taken into account. We demonstrate that the wall orientation is determined by the atomic lattice and the resulting strength of an effective exchange interaction. The magnetic anisotropy and the magnetostatic energy play a minor role for the wall orientation in that system.     

Pb(Zr0.52Ti0.48)O3陶瓷畴界粘滞运动的介电损耗模拟

对不同频率下(1—10kHz)Pb(Zr_0.52Ti_0.48)O₃多晶陶瓷的介电性能的测量表明：在接近铁电相变温度T_c以下存在一介电损耗峰,该峰具有弛豫特征但不满足Arrhenius关系．这一损耗峰被认为是由于畴界与晶格、缺陷钉扎的互作用引起的．用畴界粘滞运动的动力学方程,考虑陶瓷样品中T_c离散分布的情况,模拟了该介电损耗峰在不同频率下的行为,得到了与实验数据一致的结果．并由拟合参数计算了畴界运动     

Pb(Zr0.52Ti0.48)O3陶瓷畴界粘滞运动的介电损耗模拟

对不同频率下（１ —１０ ｋ Ｈｚ） Ｐｂ（ Ｚｒ０５２ Ｔｉ０４８） Ｏ３ 多晶陶瓷的介电性能的测量表明：在接近铁电相变温度 Ｔｃ 以下存在一介电损耗峰,该峰具有弛豫特征但不满足 Ａｒｒｈｅｎｉｕｓ 关系．这一损耗峰被认为是由于畴界与晶格、缺陷钉扎的互作用引起的．用畴界粘滞运动的动力学方程,考虑陶瓷样品中 Ｔｃ 离散分布的情况,模拟了该介电损耗峰在不同频率下的行为,得到了与实验数据一致的结果．并由拟合参数计算了畴界运动的粘滞系数和缺陷钉扎引起的回复力常量．     

Magnetostrictive domain walls in antiferromagnetic NiO

We report high-resolution observations of antiferromagnetic (AF) domain walls at the surface of NiO and determine the typical width of AF walls in this material to be of the order of 150 nm. We observe a number of different types of domain walls, including double walls caused by long-range interaction between walls. We describe the observed wall profiles by a model containing the exchange interaction and magnetostriction as basic ingredients. The good agreement of this model with experiment shows that the formation of walls between antiferromagnetic domains in NiO and their properties are dominated by magnetoelastic interactions.     

Coercivity of precipitation hardened cobalt rare earth 17:2 permanent magnets

The influence of the microstructure on the coercivity has been investigated by means of transmission electron microscopy. It is shown that a thin coherent (CoCu)₅Sm-cell boumdary phase, separating cells of 17:2-crystal structure, acts as a pinning centre for magnetic domain walls. The attractive interaction force is interpreted in terms of a micromagnetic theory for domain wall pinning. The coercive force is determined by the domain wall energy gradient and by the magnetoelastic coupling energy between domain wall stresses and lattice deformation strains. The calculated coercive force due to the lattice mismatch, originated by the cellular coherent precipitation structure, is comparable to the experimentally obtained values.     

Lattice-scale domain wall dynamics in ferroelectrics

Ferroelectric domain walls are atomically thin, and consequently their dynamics are sensitive to the periodic potential of the underlying lattice. Despite their central role in domain dynamics, lattice-scale effects have never been directly observed. We investigate local domain dynamics in thin film ferroelectrics using atomic-force microscopy. Upon combined dc and ac electric driving, fluctuations in the local piezoresponse are observed. Fourier analysis of the fluctuations reveals the presence of narrow band and broad band noise, and Barkhausen jumps. The narrow band noise is attributed to dynamics associated with lattice-scale pinning and is reproduced by a simple physical model.     

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well‐aligned 71° nonpolar domain walls in BiFeO₃. Such an interfacial conductivity is induced by the creation of up‐polarized nano‐domains near the 71° domain walls, as revealed by the combination of the piezo‐response force microscopy (PFM) and conducting atomic force microscopy (c‐AFM) imaging techniques, as well as phase‐field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.     

Study of the specific features of lithium niobate crystals near the domain walls

The domain walls in LiNbO₃ are studied using X-ray topography, X-ray diffraction, and scanning electron microscopy. It is shown that the regions of distortions of the crystal lattice near the domain walls of different types are different and have lateral sizes of 100–200 μm. The character and the magnitude of the distortions are substantially dependent on the method of formation of the domain structure. Under irradiation in a scanning electron microscope, the crystal region up to 25 μm in width near the “tail-to-tail” domain walls is charged more slowly and, unlike the “head-to-head” domain walls, exhibits a dynamic charge image in the secondary-electron regime.     

Domain-Wall Dynamics After Photoexcitations Near neutral-Ionic Phase Transitions

Real-time dynamics of domain walls between the neutral and ionic phases just after photoexcitations is studied by fully solving the time-dependent Schrödinger equation for a one-dimensional extended Peierls-Hubbard (PH) model, not by relying on the adiabatic approximation. The unrestricted Hartree-Fock (HF) approximation is used for electrons, and the lattice displacements are treated classically. Three characteristic time scales are observed: rapid oscillation of ionicity owing to the local charge transfer; slow oscillation of lattice displacements; and even slower and collective motion of domain walls. Steady growth of a metastable domain is achieved after complicated competition of micro domains. The relevance to recently measured, time-resolved photoreflectance spectra in TTF-CA is discussed.     

Composition of the “GaAs” quantum dot,grown by droplet epitaxy

Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD.     

Dynamic magnetic behavior of the mixed spin （2, 5/2） Ising system with antiferromagnetic/antiferromagnetic interactions on a bilayer square lattice

Using the mean-field theory and Glauber-type stochastic dynamics, we study the dynamic magnetic properties of the mixed spin （2, 5/2） Ising system for the antiferromagnetic/antiferromagnetic （AFM/AFM） interactions on the bilayer square lattice under a time varying （sinusoidal） magnetic field. The time dependence of average magnetizations and the thermal variation of the dynamic magnetizations are examined to calculate the dynamic phase diagrams. The dynamic phase diagrams are presented in the reduced temperature and magnetic field amplitude plane and the effects of interlayer coupling interaction on the critical behavior of the system are investigated. We also investigate the influence of the frequency and find that the system displays richer dynamic critical behavior for higher values of frequency than that of the lower values of it. We perform a comparison with the ferromagnetic/ferromagnetic （FM/FM） and AFM/FM interactions in order to see the effects of AFM/AFM interaction and observe that the system displays richer and more interesting dynamic critical behaviors for the AFM/AFM interaction than those for the FM/FM and AFM/FM interactions.     

Ferroelastic domain structure of (CH3)4N CdCl3 (TMCC) crystal

The ferroelastic domain structure and the phase boundaries of TMCC have been studied in the temperature range 114-90 K by direct observation under polarised light. By applying an external, compressive and unidirectional mechanical stress the ferroelastic character of the domain structure has been confirmed. The orientation of the domain walls and phase boundaries are analysed. To characterise quantitatively the observed domain wall distribution the classical symmetry approach, based on the criterion of spontaneous strain compatibility, has to be extended to allow small rotations of the domain walls with respect to their ideal orientation. The observed switching process among the different domains can be understood as a mechanism that minimises the elastic energy. Received 21 July 2000     

The interaction of transverse domain walls

The interaction between transverse domain walls is calculated analytically using a multipole expansion up to third order. Starting from an analytical expression for the magnetization in the wall, the monopole, dipole, and quadrupole moments are derived and their impact on the interaction is investigated using the surface and volume charges. The surface charges are important for the dipole moment while the volume charges constitute the monopole and quadrupole moments. For domain walls that are situated in different wires it is found that there is a strong deviation from the interaction of two monopoles. This deviation is caused by the interaction of the monopole of the wall in the first wire with the dipole of the wall in the second wire and vice versa. The dipole-dipole and the quadrupole-monopole interactions are found to be also of considerable size and non-negligible. A comparison with micromagnetic simulations shows a good agreement.     

Disorientation angles and compatible walls for phase transition hexagonal to monoclinic phase

Orientation of compatible domain walls and magnitude of disorientation angle of a ferroelastic domain twin resulting from phase transition hexagonal to monoclinic phases is expressed in crystallographic unit-cell parameters of the low-symmetry phase. These two characteristics, the orientation of the compatible wall and the disorientation angle, depend on the spontaneous strain in two single-domain states R ₁, R ₂ from which the domain twin is formed. They have been determined for all classes of the compatible domain walls as a function of the strain-tensor components [A. Authier, International Tables for Crystallography, in Physical Properties of Crystals, Chapter 3.4, Vol. D, A. Authier, ed., Kluwer Academic Publishers, Dordrecht, 2003, pp. 449–505]. If relative changes of crystal lattice are small, then the second rank symmetrical strain tensor u can be calculated from the crystallographic unit-cell parameters before and after the deformation [J.L. Schlenker, G.V. Gibbs, and M.B. Boisen Jr, Strain-tensor components expressed in terms of lattice parameters, Acta. Cryst. A 34 (1978), pp. 52–54; L. Jian and C.M. Wayman, Domain boundary and domain switching in a ceramic rare-earth Orthoniobate LaNbO_{4 ,} J. Am. Ceram. Soc. 79 (1996), pp. 1642–1648]. An alternative approach expresses the disorientation angle and orientation of the compatible domain wall [J. P?ívratská, Disorientation angle expressed in terms of lattice parameters, Ferroelectrics 291 (2003), pp. 197–204] in terms of the crystallographic unit-cell parameters of the low-symmetry phase.     

Retardation of polarization in mixed K<Subscript>0.88</Subscript>(NH<Subscript>4</Subscript>)<Subscript>0.12</Subscript>H<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystal

The time dependences of polarization of K_0.88(NH₄)_0.12H₂PO₄ mixed crystal have been studied within the temperature range of 74–100 K. Two mechanisms of polarization relaxation were found. The first mechanism is caused by domain walls lateral motion and their interaction with point lattice defects. The second one supposedly is due to polar regions infiltration through the regions of frustrated paraelectric phase.     

Domain-wall mechanism of nucleation in a magnetic structural phase transition in La<Subscript>2</Subscript>CuO<Subscript>4</Subscript>

The structure of domain walls and new-phase nucleation are investigated in a four-sublattice antiferromagnet (AFM) of the La₂CuO₄ type placed in a magnetic field which initiates an AFM-weak-ferromagnet (WFM) magnetic structural phase transition. The critical fields for nucleus growth are found in the case of two types of domain walls present. The magnetization curve is calculated and a two-step mechanism is proposed for the AFM-WFM phase transition observed in La₂CuO₄.