闪锌矿结构AlN、AlP、AlAs和AlSb电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论下的第一性原理平面波赝势从头算量子力学方法,对闪锌矿结构AlN、AlP、AlAs和AlSb的电子结构和光学性质进行了研究。分析比较了这些化合物的能带结构、态密度、介电函数及折射率等性质,总结Al与不同Ⅴ族元素形成化合物时的性质变化规律。结果表明,四种材料有着相似的能带结构,都是间接带隙宽禁带半导体,但是在导带底AlN的能态结构与其它三种材料明显不同。随着从AlN到AlSb的变化,光学性质曲线发生红移。     

AlSb掺Mn、Fe的电子结构和光学性质

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿型AlSb的超晶胞、掺入杂质Mn和Fe超晶胞进行结构优化处理。计算了三种体系下AlSb超晶胞的电子结构、Mullkien电荷数和光学性质,详细研究了其能带结构、电子态密度、电荷布局分布和光学性质。结果表明：在Mn,Fe掺杂AlSb体系中,由于空穴密度的增加,禁带宽度减小,材料表现出半金属行为,且在可见光区电子跃迁明显增强。     

AlSb掺Mn、Fe的电子结构和光学性质

采用基于密度泛函理论(DFT)的平面波超软赝势(PWPP)方法,对Mn、Fe掺杂前后AlSb的超晶胞体系进行了几何结构优化.模拟计算了Mn、Fe掺杂对AlSb的电子结构和光学性质的影响,分析了掺杂前后的能带结构、电子态密度分布、电荷布局分布、介电常数和光吸收系数的变化.计算结果表明:在Mn,Fe单掺杂AlSb体系中,由于空穴密度的增加,禁带宽度减小,材料表现出半金属行为,且在可见光区电子跃迁明显增强.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为,得出 AlN在16.7Gpa附近存在等结构相变,即由直接带隙结构转变为间接带隙结构。同时,结合高压下的态密度分布图和能级移动情况,分析了AlN在高压下的光学性质,吸收谱有向高能端移动(蓝移) 的趋势。     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为，得出 AlN在16.7Gpa附近存在等结构相变，即由直接带隙结构转变为间接带隙结构。同时，结合高压下的态密度分布图和能级移动情况，分析了AlN在高压下的光学性质，吸收谱有向高能端移动(蓝移) 的趋势。     

Cu、Zn掺杂对AlSb电子结构和光学性质影响

运用密度泛函平面波赝势方法和广义梯度近似,对替代式掺杂Cu和Zn的闪锌矿AlSb的超晶胞晶体结构、电子结构和光学性质进行了计算。分析了其电子态分布和结构的关系,给出了掺杂前后AlSb体系的复介电常数和复折射函数。结果表明,掺有Cu和Zn的AlSb晶体空穴密度增大,会明显提高材料的电导率;两种掺杂体系光学带隙均变窄;通过分析掺杂前后AlSb晶体的复介电常数和复折射函数,解释了体系的发光机制。     

新型半金属材料-Cr掺杂纳孔结构AlN的第一性原理研究

采用基于密度泛函的第一性原理,研究纳孔结构AlN的稳定性及Cr掺杂纳孔结构AlN的能带结构、态密度、磁矩等性质.结果表明,纳孔结构AlN具有高于岩盐矿结构AlN的稳定性,并在一定压强条件下可实现纤锌矿AlN到纳孔结构AlN的转变;Cr掺杂纳孔结构AlN后,能带结构和态密度均显示半金属性特征;Al23CrN24和Al22Cr2N24的磁矩分别为3+B、6+B,进一步说明Cr掺杂纳孔结构AlN晶体是半金属铁磁体.     

新型半金属材料—Cr掺杂纳孔结构AlN的第一性原理研究

采用基于密度泛函的第一性原理,研究纳孔结构AlN的稳定性及Cr掺杂纳孔结构AlN的能带结构、态密度、磁矩等性质. 结果表明,纳孔结构AlN具有高于岩盐矿结构AlN的稳定性,并在一定压强条件下可实现纤锌矿AlN到纳孔结构AlN的转变;Cr掺杂纳孔结构AlN后,能带结构和态密度均显示半金属性特征; Al23CrN24和Al22Cr2N24的磁矩分别为3B、6B,进一步说明Cr掺杂纳孔结构AlN晶体是半金属铁磁体.     

Cu掺杂的AlN铁磁性和光学性质的第一性原理研究

采用基于密度泛函理论（DFT）的总体能量平面波超软赝势方法,结合广义梯度近似（GGA）,对Cu掺杂AlN 32原子超原胞体系进行了几何结构优化,计算了Cu掺杂AlN的晶格常数,能带结构,电子态密度和光学性质.结果表明,Cu掺杂AlN会产生自旋极化状态,能带结构显示半金属性质,掺杂后带隙变窄,长波吸收加强,能量损失明显减小.同传统的稀磁半导体（DMS）相比,Cu掺杂AlN不会有铁磁性沉淀物的问题,因为Cu本身不具有磁性.因而,Cu掺杂的AlN也许是一种非常有前途的稀磁半导体. 关键词： AlN 第一性原理 铁磁性 光学性质     

高压下ZnSe的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法,利用第一性原理计算了不同的压强下ZnSe晶体闪锌矿结构,得到了它的平衡晶格常数、总能量、电子态密度分布、能带结构、光反射与吸收系数等性质,详细讨论了高压下ZnSe的电子结构,并且结合实验结果定性地分析了高压下的光学性质. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

Mesomorphic, dielectric, and optical properties of fluorosubstituted biphenyls, terphenyls, and quaterphenyls

Compounds with moderate and large negative dielectric anisotropy (Δɛ) are very attractive liquid crystal (LC) for vertical alignment mode (VA). Materials with such properties can be achieved by lateral substitution of a polar group into a mesogenic molecule. We synthesized some new LC materials with a negative value of Δɛ, a moderately high birefringence (Δn), and a low viscosity. The mesomorphic and physical behaviour of the novel biphenyls, terphenyls and quaterphenyls fluorosubstituted in the rigid core and also with fluorinated alkyl and alkoxy chains are investigated. The prepared series of four LC compounds are promising for new LC mixtures for various applications. Examples of nematic mixtures with Δɛ∼−3.25 will be presented.     

Structural, energetic, and electronic properties of Sin, Gen, and SinGen clusters

Results of a theoretical study of the properties of Si_n, Ge_n, and Si_nGe_n clusters are presented. An approximate density-functional method in combination with genetic algorithms have been used in an unbiased determination of the structures of the lowest total energy. The resulting structural, energetic, and electronic properties are analysed and compared with each other for the different systems.     

Solution absorption and luminescence studies of tetraphenylboron, -carbon, -silicon, -germanium, -tin, -lead, -phosphorus, -arsenic,and -antimony

The lowest absorption band of the tetraphenyl compounds resembles that of the lowest absorption band of benzene with the following difference. In benzene the electronic origin is strictly forbidden, and all intensity is associated with a symmetric progression built on one mode of asymmetric vibration. In the tetraphenyl compounds the intensity associated with the asymmetric vibration is relatively unaffected; however, there is increasing intensity associated with the electronic origin and a symmetric progression built on it along the series

$\text{φ}{}_4\text{Pb}\text{< φ}{}_4\text{Sn}\text{< φ}{}_4\text{Ge}\text{< φ}{}_4\text{Si}\text{< φ}{}_4\text{C}\text{? φ}{}_4\text{B}{}^{\mathrm{?}}\text{< φ}{}_4\text{Sb}{}^{\mathrm{+}}\text{< φ}{}_4\text{As}{}^{\mathrm{+}}\text{< φ}{}_4\text{P}{}^{\mathrm{+}}$

. For the cations it is the electronic origin and the progression built on it that are the primary source of intensity. This effect is attributed to an inductive perturbation. A similar effect is observed in the fluorescence spectrum. In phosphorescence, the relative enhancement of the electronic origin and the progression built on it is far less marked. The phosphorescence emission of φ₄Pb and φ₄Sb⁺ are red shifted from the others by ～0.5 eV, an effect attributed to formation of a triplet excimer. Increasing spin-orbit coupling in the triplet due to a heavy atom effect can be seen in the decreasing phosphorescence lifetime (range 4 sec to 4 msec) and decreasing ratio of $\text{φ}{}_{\mathrm{f}}\text{φ}{}_{\mathrm{p}}$ (fluorescence to phosphorescence quantum yields) in the order

$\text{φ}{}_4\text{C}\text{> φ}{}_4\text{B}\text{> φ}{}_4\text{Si}\text{> φ}{}_4\text{P}{}^{\mathrm{+}}\text{> φ}{}_4\text{Ge}\text{> φ}{}_4\text{As}{}^{\mathrm{+}}\text{> φ}{}_4\text{Sn}$

In all cases nonexponential decay of phosphorescence is observed.     

Cointegration of output, capital, labor, and energy

Cointegration analysis is applied to the linear combinations of the time series of (the logarithms of) output, capital, labor, and energy for Germany, Japan, and the USA since 1960. The computed cointegration vectors represent the output elasticities of the aggregate energy-dependent Cobb-Douglas function. The output elasticities give the economic weights of the production factors capital, labor, and energy. We find that they are for labor much smaller and for energy much larger than the cost shares of these factors. In standard economic theory output elasticities equal cost shares. Our heterodox findings support results obtained with LINEX production functions.     

Sonochemical synthesis of carbon dots,mechanism, effect of parameters,and catalytic,energy, biomedical and tissue engineering applications

Carbon-based nanomaterials are gaining more and more interest because of their wide range of applications. Carbon dots (CDs) have shown exclusive interest due to unique and novel physicochemical, optical, electrical, and biological properties. Since their discovery, CDs became a promising material for wide range of research applications from energy to biomedical and tissue engineering applications. At same time several new methods have been developed for the synthesis of CDs. Compared to many of these methods, the sonochemical preparation is a green method with advantages such as facile, mild experimental conditions, green energy sources, and feasibility to formulate CDs and doped CDs with controlled physicochemical properties and lower toxicity. In the last five years, the sonochemically synthesized CDs were extensively studied in a wide range of applications. In this review, we discussed the sonochemical assisted synthesis of CDs, doped CDs and their nanocomposites. In addition to the synthetic route, we will discuss the effect of various experimental parameters on the physicochemical properties of CDs; and their applications in different research areas such as bioimaging, drug delivery, catalysis, antibacterial, polymerization, neural tissue engineering, dye absorption, ointments, electronic devices, lithium ion batteries, and supercapacitors. This review concludes with further research directions to be explored for the applications of sonochemical synthesized CDs.     

Fabrication,Microstructure, and Properties of Nanoporous Pd,Ni, and Their Alloys by Dealloying

Nanoporous metals can be fabricated by dealloying, which is one of the reactions that occur during the corrosion of alloys. Nanoporous gold has been widely investigated for several decades, and it has recently been found that other metals, such as platinum, palladium, nickel, and copper, can form nanoporous structures through the dealloying of binary alloys. This article mainly shows fabrication and properties of nanoporous palladium and nickel after introduction of nanoporous metals by referring to nanoporous gold as an example. It is necessary to select binary alloys with suitable elements, in which the dissolution of the less noble element and the aggregation of the nobler element at the solid/electrolyte interface are simultaneously allowed. Postprocessing by thermal or acid treatment alters the nanoporous structure. Various properties of nanoporous metals (including mechanical, catalytic, piezoelectric, hydrogenation, and magnetic ones) are different from those of bulk and nanocrystalline materials and nanoparticles because of their specific three-dimensional network structures consisting of nanosized pores and ligaments. Hydrogenation and magnetic properties are reviewed in terms of lattice strain at curved surfaces. These new metallic nanomaterials are now being investigated from the viewpoint of functional applications, and provide much room for study in various fields.     

Density functional theory study of structural,electronic,and thermal properties of Pt,Pd, Rh,Ir, Os and PtPdX(X= Ir,Os, and Rh) alloys

The structural, electronic, mechanical, and thermal properties of Pt, Pd, Rh, Ir, Os metals and their alloys Pt Pd X(X= Ir, Os and Rh) are studied systematically using ab initio density functional theory. The groundstate properties such as lattice constant and bulk modulus are calculated to find the equilibrium atomic position for stable alloys. The electronic band structure and density of states are calculated to study the electronic behavior of metals on making their alloys. The electronic properties substantiate the metallic behavior for all studied materials. The firstprinciples density functional perturbation theory as implemented in quasi-harmonic approximation is used for the calculations of thermal properties.We have calculated the thermal properties such as the Debye temperature, vibrational energy, entropy and constant-volume specific heat. The calculated properties are compared with the previously reported experimental and theoretical data for metals and are found to be in good agreement. Calculated results for alloys could not be compared because there is no data available in the literature with such alloy composition.     

Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films

Thin films of pseudoamorphous GaN (a-nc-GaN), as well as of its alloys with indium, In_xGa_1−x N (x=0.04, 0.16), were prepared by magnetron sputtering of a metallic target in the plasma of a reactive nitrogen and argon mixture. The a-nc-GaN films were codoped by the Zn acceptor impurity and a set of rare-earth metal (REM) dopants, namely, Ce, Tb, Er, Sm, and Eu. Photoluminescence (PL) spectra excited by a nitrogen laser with wavelength λ=337 nm at room temperature and 77 K were measured for all compositions and a set of impurities. It was shown that the high-energy PL edge of the pseudoamorphous (a-nc) GaN matrix lies at the same energy as that of the crystalline (epitaxial) c-GaN. As in c-GaN, the Zn acceptor impurity stimulates blue luminescence; however, the PL spectrum is substantially more diffuse, with practically no temperature quenching of the PL present. Indium doping in an amount of 16 at. % results in strong PL with a diffuse peak at 2.1–2.2 eV; the PL of the alloy exhibits temperature quenching as high as a factor of three to four in the interval 77–300 K. The decay time of the PL response increases up to 50 μs. RE impurities enter the amorphous GaN host as trivalent ions and produce narrow-band (except Ce) high-intensity spectra, thus indicating both a high solubility of RE impurities in a-nc-GaN and the generation of an effective crystal field (by the GaN anion sublattice) whose local symmetry makes the intracenter f-f transitions partly allowed. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 3, 2003, pp. 395–402. Original Russian Text Copyright ? 2003 by Andreev.