Indirect electronic transitions in alkali halate crystals-I (sodium and potassium chlorate crystals)

The long wavelength tail of the fundamental absorption in NaClO₃ and KClO₃ crystals has been analysed based on the theory of band to band transitions of Bardeen et al.[8] developed in the case of semi-conducting crystals. Evidence of phonon involvement in the transitions giving an indirect band gap is observed. The energies of the phonons involved in the process are the same for both the crystals, and agree well with combinations of prinicple frequencies of ClO₃^? ion, their overtones and also lattice phonons. The indirect band gap in these crystals varies with temperature more or less linearly and the rate of variation is ?3·8 × 10^?4 eV/K and ?5·0 × 10^?4 eV/K for sodium chlorate and potassium chlorate respectively.     

Optical absorption edge in SnS

Optical absorption in single crystals of tin sulfide has been studied at many temperatures between 100 and 300 °K, in the wavelength range 2·2–0·8 μ. From the interference fringe patterns the absorption coefficient, reflection coefficient and index of refraction as a function of wavelength were determined for two light polarizations (ε∥a and ε∥b). From an analysis of the data, indirect band gaps of 1·142 and 1·095 eV were found for the two directions of polarization. Also it was found that the phonon assisted transitions required the participation of two phonons at different energy thresholds with energies 0·033 or 0·038 eV and 0·082 or 0·113 eV, with reference to the two axis. The temperature dependence of the indirect band gap for each direction of light polarization is linear with a slope ?4·05 × 10^?3eV and ?4·37 × 10^?3 eV respectively.     

Optical absorption in MnIn2S4 single crystals

Optical absorption in MnIn₂S₄ single crystals has been studied. Direct and indirect optical transitions are found to occur at photon energies of 1.90?C2.16 eV in the temperature range of 80?C342 K. The temperature dependence of the band gap is determined; its temperature coefficients E _gd and E _gi are found to be ?4.84 × 10^?4 and ?6.33 × 10^?4 eV/K, respectively. The electron-phonon interaction is the main mechanism of the temperature shift of the intrinsic-absorption edge. MnIn₂S₄ single crystals exhibit anisotropy in polarized light at the absorption edge in the temperature range of 90?C190 K; the nature of this anisotropy is explained.     

Optical absorption edge of GaS under hydrostatic pressure

The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of ?2 ± 0.5 × 10^?6eV/bar and the indirect edge of ?ll ± 1.5× 10^?6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given.     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Pressure and temperature dependence of Raman scattering and optical absorption in crystalline S4N4

Raman scattering and optical absorption in crystalline S₄N₄ have been measured both as a function of pressure at 295 K and low temperatures. Polarized single crystal Raman data were also obtained as an aid in the assignment of the Raman active phonons. The pressure coefficients of the Raman active external and S-S stretching modes show a discontinuity near 7 kbar indicative of a second order phase change. The optical absorption edge at about 2.5 eV of a sublimed film of S₄N₄ shows red shifts of 1.3 × 10^?5 eV bar^?1 and 6.3 × 10^?4 eV K^?1 with pressure and temperature respectively. In the light of these results, the electronic, vibrational and structural properties of the crystal are discussed.     

Optical band-gap of Zn3As2

Absorption measurements of single Zn₃As₂ crystals were made at temperatures 5, 80 and 300 K. Free-carrier absorption is interpreted in the simple classical model. Interband absorption shows contributions from Urbach-like excitations. The direct optical gap has been estimated as 0.99 eV at 300 K, 1.09 eV at 80 K and 1.11 eV at 5 K. The linear dependence of band-gap on temperature was found in the range 80–300 K with dE_g/dT = ? 4.55 × 10^?4eVK^?1.     

Amorphous germanium III. Optical properties

The optical properties of thick sputtered films (～30μ) of amorphous Ge, grown with different substrate temperatures (0ˇ-T _sˇ-350°C), were obtained between 0·05 and 4·5 eV by a combination of reflectance, transmittance and ellipsometric measurements. The refractive index at 0·15 eV decreases monotonically with increasing T _s, or equivalently, with increasing density, and is 4·13±0·05 eV in the highest density films. The absorption edge is approximately exponential (10²?α?10⁴ cm^?1) but shifts monotonically to higher energy and increases in slope with increasing T _s. Similarly, the peak in ε₂ grows by about 10% and shifts by about 0·15 eV to higher energies, reaching a maximum of about 23 at 2·90±0·05 eV in the high density films. The peak in the transition strength ω²ε₂ occurs at 4·2±0·2 eV in all films, but increases in magnitude with increasing T _s. The sum rules for n _eff(ω) and ε_0,eff(ω) are evaluated for ▄ω?5 eV and vary monotonically with T _s. These trends are neither compatible with Galeener's void resonance theory nor with changes in the oxygen content of the films, determined by the examination of absorption peaks at 0·053 eV and 0·09 eV. An explanation, suggested here and expanded in I, is based on the observed changes in the structure of the network and voids.     

Dipolar studies in CaF2 with Ce3+

Dielectric relaxation in CaF₂ doped with various amounts of Ce³⁺ (0·01 to 1·0 mol%) was measured. The value of the activation energy for orientation of the dipoles {Ce³⁺-F^? interstitial} was determined to be H = (0·46 ± 0·01) eV. The frequency factor was found to have the value τ_o = (5 ± 1) × 10^?15 sec, giving for the vibrational frequency of the interstitial the value ν_o = (5 ± 1) × 10¹³ sec^?1.The number of dipoles contributing to the dielectric loss peak was determined to be between 10¹⁷ and 8 × 10¹⁷ cm^?3 for the different doping amounts of Ce³⁺. Optical absorption measurements showed the existence of large aggregate bands. We could verify that there exists a second-order reaction of aggregation, which is responsible for the non-linearity found between optical absorption at 305 nm and the nominal concentration of Ce³⁺ in the samples. On the other hand, if we assume that the centers which contribute to optical absorption at 305 nm are those also responsible for the relaxation peak, we find that the number contributing to each process is not the same. We can define an interaction radius R as the minimum separation between two dipoles allowing them to contribute to the relaxation peak. From our experimental data R ? 3·8 × 10^?7 cm.     

Die Temperaturabhängigkeit des Bandabstandes von Bleiselenid,gemessen an photoleitenden Schichten

The temperature dependence of spectral distribution of photoconductivity was measured on evaporated polycrystalline layers of lead-selenide in the range from 80 to 300 °K. The method ofBardeen, Blatt andHall was used, to calculate the band gap for direct and indirect transitions. A linear positive temperature coefficient was obtained for both transitions. The values areβ _dir=+(4.5±0.2) · 10^?4 eV/°K andβ _ind=+(3.0±0.2)· 10^?4eV/°K.     

Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.     

Spectroscopy of YAl3(BO3)4:Cr3+ crystals following first principles and crystal field calculations

The CASTEP module of the Materials Studio package was used for calculations of the structural, electronic and optical properties of pure and Cr³⁺-doped YAl₃(BO₃)₄ (YAB). The exchange-correlation effects were treated within the generalized gradient approximation with the Perdew–Burke–Ernzerhof functional. The Monkhorst–Pack scheme k-points grid sampling was set at 3?×?3?×?4 for the Brillouin zone. The plane-wave basis set energy cutoff was set at 340?eV; ultrasoft pseudopotentials were used for all chemical elements. The convergence parameters were as follows: total energy tolerance 1?×?10^?5?eV/atom, maximum force tolerance 0.03?eV/nm, maximal stress component 0.05?GPa and maximal displacement 0.001?Å. The principal absorption peaks of the studied crystal were identified. The influence of 532?nm?cw, 300?mW laser radiation on the observed absorptions was studied.     

Diffusionskonstante und charakteristische Absorption vor der Bandkante von Mn in ZnO-Kristallen

ZnO single crystals were doped with Mn and Co by diffusion. In the temperature range from 1400–1600 K the Mn and Co-diffusion-constants were determined:D _Mn=3.2 · 10^?3 exp (?2.87 eV/kT) cm² sec^?1 andD _Co=1·10exp(?3.98 eV/kT) cm² sec^?1. The Mn doped ZnO crystals show a characteristic colour due to an absorption near the intrinsic absorption edge. The corresponding absorption spectra were measured forE⊥c andE∥c. A discussion of different absorption mechanism shows that a charge-transfer transition is responsible for this absorption.     

Effect of uniaxial stress on InSbtunnel junctions

The deformation potential constants of heavily doped InSb have been determined by applying uniaxial stress to p-n tunnel junctions formed below the surface of rectangular InSb bars. Stress applied parallel to the major axes of these bars and parallel to the junction plane resulted in a linear decrease in tunnel current as a function of stress. The percentage decreases were 24·5 × 10^?3, 9·5 × 10^?3 and 4·5 × 10^?3cm²kg^?1 for stress applied parallel to [010], [11¯0], and [111] directions respectively. The observed changes in tunnel currents are attributed to a decrease in the tunnel probability produced by a shift in the conduction band edge relative to that of the valence band. Our data is consistent with a hydrostatic deformation potential of — 10 eV, and valence band deformation potentials b = ? 1·3 eV and d = ?7·4 eV.     

Measurement of Ar(I) and Ar(II) transition probabilities in LTE ARC plasmas

The transition probabilities of two Ar(I) lines and one Ar(II) line have been measured in emission on wall-stabilized argon arc plasmas (0·5×10⁵?p, Nm^-2?3×10⁵; 10,000?T, K?20,000; 10²²?N_e, m^-3?5×10²³) using the “method of best fit (MBF)”. The results (without line-wing correction) are for Ar(I) at 714·7 nm, A_nm=5·66×10⁵ s^-1±5%; for Ar(I) at 430·0 nm, A_nm=3·40×10⁵ s^-1±5%; for Ar(II) at 480·6 nm, A_nm=8·82×10⁷ s^-1±7%. These values were not influenced by deviations from LTE, which have been observed at electron number densities n_e?10²³ m^-3. The small uncertainties were achieved after careful corrections of different sources of error.     

The exciton absorption in deformed germanium

Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as E_{g 0} = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as E_ex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of E_g for κ = 0 in the range 77 °–297 ° K is (dE_g/ /dT)_p =?3.50 · 10^?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dE_g/dT)_d = (?1.5±0.1) · 10^?4 eV/deg. The half-width σ ≈ 5 · 10^?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10^?12 sec.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Iodine as a donor in CdS

Iodine doped single crystals of CdS were grown from the vapor phase. High temperature Hall effect measurements for the crystals equilibrated with Cd and S₂ vapors at temperatures between 700 and 1000°C gave the free electron concentration as a function of p_Cd or p_S2 and temperature. The results can be explained on the basis of a model in which the CdS is saturated with iodine at low p_Cd (=high p_S2) but unsaturated at high p_Cd.The solubility of iodine in CdS is given by c_t=1·73×10²²p_S2^?1/8 exp (?1·045 eV/kT) cm^?3 atm^?1/8=4·62×10¹⁹p_Cd^1/4 exp (?0·195 eV/kT) cm^?3 atm^1/4The formation of pairs (I_SV_Cd)′ from I_S^· and V_Cd″ is governed by the equilibrium constant K_{P(I, V)}=4 exp (≤1·1 eV/kT)If Cd diffusion occurs primarily by free vacancies, the Cd^* tracer self diffusion leads to a vacancy mobility of (1·2±0·5)×10^?5 cm² sec^?1 at 900°C, in agreement with results reported by Woodbury [12], but (7±3) times larger than reported by Kumar and Kroger [10].     

Knight shifts and magnetic susceptibilities of the intermetallic compounds CeCu4 and CeCu5

The magnetic susceptibility and Knight shift of the compounds CeCu₄ and CeCu₅ have been measured over the temperature ranges 80–800 and 140–400 K, respectively. The most important contributions to the magnetic susceptibility are the Curie-Weiss term, expressing the paramagnetism of the localized ?-electrons, and a temperature independent term, which have both been determined. The phenomenological exchange integral F_s? between the 4?-electron spins and conduction electron spins was found to be ?10.43× 10^?3 eV for CeCu₄ and 3.9 × 10^?3 eV for CeCu₅. A reversal in the sign of the s?? coupling for CeCu₅ is noted.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.