The (100), (111) and (110) surfaces of diamond: an ab initio B3LYP study

We present an accurate ab initio study of the structure and surface energy of the low-index (100), (111) and (110) diamond faces, by using the hybrid Hartree–Fock/density functional B3LYP Hamiltonian and a localised all-electron Gaussian-type basis set. A two-dimensional periodic slab model has been adopted, for which convergence on both structural and energetic parameters has been thoroughly investigated. For all the three surfaces, possible relaxations and reconstructions have been considered; a detailed geometrical characterisation is provided for the most stable structure of each orientation. Surface energy is discussed for all the investigated faces.     

Interaction of carbon dioxide with Fe(110), stepped Fe(100) and Fe(111)

The adsorption of CO₂ on single crystal surfaces of Fe(110), regularly stepped Fe(110) and Fe(111) in the temperature range between 77 and 340 K was studied by means of He(I) UPS and measurements of the change in work function. The smooth Fe(110) face proved to be completely inactive with respect to CO₂ adsorption. On a stepped Fe(110) and an Fe(111) face CO₂ is adsorbed at 77 K in the form of a linear molecule and in the form of a species the nature of which is not yet clarified. This latter form is predominant at 140 K. With increasing temperature decomposition into CO and O and finally into C and O takes place.     

Selenium dioxide: Rotational analysis and Franck-Condon calculations for the 3130 Å 1B2-X̃1A1 absorption system

Band contour analyses of the absorption bands of ⁷⁸Se¹⁶O₂ and ⁸⁰Se¹⁶O₂ at 2949 Å, assigned to the 1₀³ transition (King and McLean, in press), show that they are type A, with transition moment directed in-plane and parallel to the line joining the oxygen nuclei. The electronic transition responsible for the B absorption system of the molecule is therefore ${}^1\text{B}{}_2\text{-}\text{X}\text{?}{}^1\text{A}{}_1$ under the C_2v point group. The contour analysis gives the excited state bond angle as 101.0°, and the bond length as 1.74 Å. The latter value is confirmed by Franck-Condon calculations. There is therefore an increase in bond length and a decrease in bond angle upon electronic excitation. This agrees with the predictions of molecular orbital theory.     

Rotational analysis of the 8000–9000 Å bands of nitrogen dioxide

The rotational structure of bands of NO₂ vapor in the region 8300–9000 Å has been partially analyzed and the absorption assigned to the (000)-(000) and (000)-(010) vibronic bands of the $\text{A}\text{?}{}^2\text{B}{}_2\text{←}\text{X}\text{?}{}^2\text{A}{}_1$ electronic transition. Irregular weak perturbations in the N-structure of the upper-state manifold are accompanied by larger resonance-type crossings in the K-structure. The larger perturbation is attributed to vibronic coupling between the à state and excited vibrational levels of the ground state, characterized by a low density of ground state levels and a large vibronic coupling matrix element between the à and X? states. The reconstituted, deperturbed bands have blue-degraded N-structure and strongly red-degraded K-structure, indicating that the bond angle decreases sharply in the excited state. The physical structure of the ²B₂ state is uncertain but some suggestions are made. The electronic energy of the ²B₂ state is T₀ = 11 962.9 cm^?1.     

Chemisorption of CO on Cu(100), Ag(110) and Au(110)

The adsorption of CO on Cu, Ag and Au is studied using core and valence photoemission, X-ray absorption and autoionization of core excited states. The purpose is to investigate the nature of the adsorption bond starting out from the well-established chemisorption system CO/Cu(100)-c(2 × 2), and from the results we suggest that CO forms chemisorbed phases also on Ag(110) and Au(110). The photoemission spectra show strong shake-up satellites both for the valence levels and the core levels. The separation to the satellite appearing closest to the main line is observed to follow the position of the substrate d-band relative to the Fermi level. The CO adsorption strength for the noble metals is deduced to decrease in the order Cu-Au-Ag. This is based on the widths of the XA resonances, which are related to the adsorbate-substrate interaction strength of the core excited states, and the relative shake-up intensities, which are expected to increase with a decreasing adsorption strength in the ground state. The same trends regarding the shake-up intensities are observed both for the valence and core levels.     

High-resolution photoemission from Ag(100), Ag(110), and Ag(111)

Energy distribution curves of photoelectrons emitted normal to (100), (110), and (111) faces of silver have been obtained at photon energies of 21.22, 16.85, and 11.83 eV. The results are compared with Christensen's relativistic band structure calculation of bulk silver yielding a close correspondence between experiment and theory. A surface state in the L gap immediately below the Fermi level is identified.     

Rotational vibrational analysis of the BΠ (0) - XΣ band system of BrCl and BrCl

24 bands of the B³Π(0⁺) ← X¹Σ⁺ system of ⁷⁹Br³⁵Cl and ⁸¹Br³⁵Cl have been photographed at high resolution. Direct least-mean square fits of the measured line frequencies were made to determine band origins and rotational constants in the ranges 1 ≤ v″ ≤ 7, 2 ≤ v′ ≤ 8. A reiterative procedure was adopted in which the higher order centrifugal distortion constants (D_v, H_v) were constrained to theoretical values calculated from RKR potential curves. The results of the analysis are used to obtain a set of Franck-Condon factors and r-centroids for the B-X system of BrCl.     

276-nm absorption band system of m-dichlorobenzene: Rotational band contour analysis

The 276-nm absorption band system (${}^1\text{B}{}_2\text{←}{}^1\text{A}{}_1$) of m-dichlorobenzene was photographed under high resolution. The electronic origin band (0, 0) and a band at (0 + 380) cm^?1 were subjected to rotational “band contour” analysis. As a result, it is found that the origin band has a type A band contour and that at (0 + 380) cm^?1 exhibits a type B band contour. The band contour analysis also yields an accurate determination of the excited state parameters, viz., A′ = 0.0911 ± 0.0003, B′ = 0.02852 ± 0.00005, and C′ = 0.02175 ± 0.00001 cm^?1. A model geometry for the molecule m-DCB in its first excited singlet state has been proposed.     

Rotational analysis of the B-X band system of the SbO molecule

Rotational analyses of the two 0-0 bands of theB ²ΣX ²Π_reg system of SbO were carried out for the first time from spectrograms taken in the second order of a 21 ft. concave grating spectrograph having a dispersion of 1·25 Å/mm. The rotational constants of the ν=0 vibrational levels of the upper and lower states, and of the coupling constant A₀ of the lower²Π_reg state were deduced. These values are summarised below. v₀₀=25 334·93 cm^?1 B′₀=0·3190 cm^?1 B″₀=0·3490 cm^?1 A ₀=2276 cm^?1 r′₀=1·933 Å r″₀=1·848 Å.     

Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs

We have measured the Langmuir evaporation of Ga and As from the (100), (111A), and (111B) faces of GaAs above and below the congruent evaporation temperature T_c. We have found that T_c is lowest for the (111B) face and highest for the (111A) face. These differences can be understood in terms of the different lifetimes of surface Ga on these faces. Furthermore, we have deduced that the evaporation processes are the rate limiting steps in the decomposition of GaAs. Below T_c, decomposition is controlled by the evaporation of Ga; above T_c it is controlled by the evaporation of As.     

A photoemission study of the interaction of Ni(100), (110) and (111) surfaces with oxygen

Photoelectron spectroscopic studies of the oxidation of Ni(111), Ni(100) and Ni(110) surfaces show that the oxidation process proceeds at 295 and 485 K in two distinct steps: a fast dissociative chemisorption of oxygen followed by oxide nucleation and lateral oxide growth to a limiting coverage of 3 NiO layers. The oxygen concentration in the 295 K saturated oxygen layer on Ni(111) was confirmed by ¹⁶O(d,p) ¹⁷O nuclear microanalysis. At 295 and 485 K the oxide growth rates are in the order Ni(110) > Ni(111) > Ni(100). At 77 K the oxygen uptake proceeds at the same rate on all three surfaces and shows a continually decreasing sticking coefficient to saturation at ~2.1 layers (based upon NiO). An O 1sb.e. = 529.7 eV is associated with NiO, and O ls b.e.'s of ~531.5 and 531.3 eV can be associated, respectively, with defect oxide (Ni₂O₃) or (in the presence of H₂O) with an NiO(H) species. The binding energies (Ni 2p, O 1s) of this NiO(H) species are similar to those for Ni(OH)₂. Defect oxides are produced by oxidation at 485 K, or by oxidation of damaged films (e.g. from Ar⁺ sputtering) and evaporated films. Wet oxidation (or exposure to air) of clean nickel surfaces and oxides, and exposure of thick oxide to hydrogen at high temperature results in an O 1s b.e. ~531.3 eV species. Nuclear microanalysis ²H(³He,p) ⁴He indicates the presence of protonated species in the latter samples. Oxidation at 77 K yields O 1s b.e.'s of 529.7 and ~531 eV; the nature of the high b.e. species is not known. Both clean and oxidised nickel surfaces show a low reactivity towards H₂O; clean nickel surfaces are ~10³ times less reactive to H₂O than to oxygen.     

Surface states calculation for the (100), (110) and (111) faces of Si

Using essentially the Heine and Jones model of the band structure for diamond-type semiconductors and a 3-dimensional surface state secular equation, we have calculated the bands of surface states for the (100), (110) and (111) orientations of the surface plane of ideal Si. Our bands for the (110) surface are very similar to those obtained by Jones. Based on these bands of surface states, we can explain reasonably both optical and electrical measurements on the (111) surface.     

Relaxation and electronic states of Au(100), (110) and (111) surfaces

Using a first-principles method based on density functional theory, we investigate the surface relaxation and electronic states of Au(100), (110) and (111) surfaces. The calculated results show that the relaxations of the (100) and (110) surfaces of the metal are inward relaxations. However, the Au(111) surface shows an ‘anomalous’ outward relaxation, although several previous theoretical studies have predicted inward relaxations that are contrary to the experimental measurements. Electronic densities of states and the respective charge density distribution along the Z-axis of the relaxed surfaces are analyzed, and the origin of inward and outward relaxation is discussed in detail.     

Planar channeling of helium ions along (100), (110) and (111) MgO

Planar channelling of 1, 1.5 and 2 MeV ⁴He⁺ ions along (100), (110) and (111) MgO have been studied experimentally using Rutherford backscattering. Values of the half angle $\text{ψ}{}^{\mathrm{P}}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$, shoulder half angle $\text{ψ}{}^{\mathrm{s}}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ and surface minimum yield x^P_min have been determined for channelling with respect to the two sublattices. Agreements and discrepancies with existing theories are discussed.