Stimulation von ZnS-Phosphoren mit langwelligem Infrarot

Stimulation experiments with ZnS phosphors, using IR wavelengths from 2 to 15μ, were performed at the temperature of liquid helium. For this purpose a cryostat was constructed which allowed to keep the samples and the screening device at the temperature of liquid helium. Moreover glow curves after different decay times at 6 °K were taken. After excitation of ZnS phosphors a strong release of carriers from relatively deep traps is taking place although the phosphor is kept at the temperature of liquid helium. This emptying of traps is accompanied by a luminous recombination of the released electrons with the activator levels producing an intense afterglow which can be observed over a long time. This phenomenon cannot be explained by thermal release of trapped electrons into the conduction band, followed by recombination with the activator levels because of the depth of the emptied traps. The rate of thermal carrier release was calculated to be about 10^?29 sec^?1 for 0,05 eV deep traps, but the observed rate was of the order of 10^?4 sec^?1. An emptying of traps by IR-stimulation can be excluded because the phosphor was surrounded by a concentric screening device kept at 4.2 °K. The effect can be explained by luminous tunneling of trapped electrons to the activator levels. An estimate of the tunneling rate gives a value agreeing with the experimental results. If such a “tunnel afterglow” does exist a spectral shift to longer wavelengths compared to the usual fluorescence and phosphorescence is to be expected. This could be actually observed. Additional experiments included IR-stimulated emission after various decay times, glow curves taken after such stimulation, and studies of the influence of temperature. The results rule out the possibility that the carriers were released from the traps by IR light. Apparently, IR radiation affects the potential barrier between the traps and the activators so that the rate of recombination by tunneling increases.     

Electron stimulated desorption of carbon monoxide from a (111) niobium surface

Electron stimulated desorption of CO from the (111) face of a Nb single crystal produced both CO⁺ and O⁺ ions after adsorption at 150°K on a clean surface. When the surface was heated to above 250 °K only O⁺ ions were observed, and this current disappeared as the temperature was increased to 700 °K. Readsorption (at 150 °K) was inhibited following the 700 °K heating. These data indicate the formation on heating of a tightly bound surface phase with very low ionic desorption cross section. Threshold energies for CO⁺ and O⁺ ion production were 10.0 ± 0.5 eV and 19.0 ± 0.5 eV, respectively. The cross section for electron stimulated depopulation of the O⁺ producing phase was (4 ± 1) × 10^?18 cm² for 100 eV electrons.     

Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

High purity semi-insulating 4H SiC single crystals have potential applications for room temperature radiation detectors because of the wide band gap and radiation hardness. To control carrier lifetime, a key parameter for high performance radiation detectors, it is important to understand the nature of the deep traps in this material. For this purpose, we have successfully applied thermally stimulated current (TSC) and high temperature resistivity measurements to investigate deep level centers in semi-insulating 4H SiC samples grown by physical vapor transport. High temperature resistivity measurements showed that the resistivity at elevated temperatures is controlled by the deep level with an activation energy of 1.56 eV. The dominant traps revealed by TSC measurements were at 1.1-1.2 eV. The deep trap levels in 4H-SiC samples, the impurity and point defect nature of TSC traps peaked at ∼106 K (0.23 eV), ∼126 K (0.32 eV), ∼370 K (0.95 eV), ∼456 K (1.1-1.2 eV) are discussed.     

Characteristics of traps in TlInS2 single crystals

Characteristics of charge traps in TlInS₂ single crystals are investigated by the use of thermally stimulated current (TSC) technique. The TSC spectra of the sample from 80 K to 300 K are recorded at a constant heating rate. The spectra reveal that there are several trapping levels associated with the complex structure of overlapping peaks. The experimental results indicate that the traps in TlInS₂ associated with the spectra in the measuring range of temperature obey the monomolecular (first order) kinetics. Thus, the spectra are resolved into first order shaped peaks by the use of computerized best fit procedure. The trapping parameters; such as the energy depth, temperature dependent frequency factor and capture cross section, together with concentrations of the corresponding six discrete levels are computed. These centers all having low capture cross sections with strong temperature dependence are found to be at the energies of 0.11 eV, 0.22 eV, 0.25 eV, 0.26 eV, 0.29 eV and 0.30 eV with high concentrations of 6.6 × 10¹⁶, 2.0 × 10¹⁷, 3.3 × 10¹⁷, 9.6 × 10¹⁶, 2.3 × 10¹⁷ and 4.0 × 10¹⁷ cm^?3, respectively.     

2E → 4A2 luminescence properties of the hydration isomers of Cr3+ doped K3Al(ox)3

The ²E → ⁴A₂ phosphorescence of Cr(III) doped K₃ [Al(ox)₃] · 3H₂O and partially dehydrated species has been measured between 77 and 4.2°K. Emission in the partially dehydrated crystals is observed from Cr(III) ions in several different sites. In 1% crystals the quantum yield and lifetime both increase on dehydration. Evidence against energy transfer between different sites is offered by the lack of thermalization at 4°K between R lines arising from different sites even at high Cr(III) concentrations, although there is evidence for excitation energy transfer to nonemitting traps.     

Thermally stimulated luminescence and infrared studies of CaS : Bi,Tm phosphors

Calcium sulphide phosphors doped with bismuth and thulium are prepared from Indian minerals. The glow curves are recorded in the temperature range of 96–320 °K. The activation energies are determined by analyzing the glow peaks after thermal cleaning, using different methods. The results show that, in these phosphors, the electron traps responsible for thermoluminescence are present prior to irradiation. The infrared absorption spectra are recorded in the range of 4000-250 cm^-1. It is concluded that the traps are due to host lattice defects which may arise from S^-2 ion vacancies, created during phosphor preparation.     

Study of the trapping states in ZnS single crystals grown from gallium melt

The trapping levels in zinc sulphide single crystals grown from gallium melt have been investigated using thermoluminescence techniques. The observed peak at 175° K consists of two overlapping components at 173 and 200° K respectively. Thermal activation energies and frequency factors were calculated for both traps. The dependence of glow curve shape on excitation conditions is caused by the retrapping by non-filled 200° K traps of electrons freed from 173° K traps in the course of the glow curve run. In addition to the results on “pure” crystals, measurements were made on samples grown with chlorine, oxygen and copper impurities, as well. Although no positive identification of the chemical nature of the 173 and 200° K trapping centers has been possible, we find that our results are not inconsistent with a previously suggested model in which the traps are identified as complex defects. Comparison is also made with trap spectra observed earlier in gallium-doped zinc sulphide samples prepared by the usual methods.     

Photostimulated thermoluminescence of x-irradiated NaCl

The thermoluminescence and photostimulated thermoluminescence of X-ray coloured NaCl crystals has been studied, together with the thermal annealing of F, F′ and M centres. Three glow peaks centred at 315, 341 and 348°K are obtained in the temperature range 300–400°K. The first peak (315°K) is ascribed to electron trapping by Cu²⁺ centres formed by X-irradiation. The other peaks (314 and 348°K) are related to the thermal annealing of M and F centres, respectively.     

Thermal desorption spectroscopy of he from Ni at and below saturation

Trapping of helium after implantation at energies of 8 to 150 keV and fluences up to 10¹⁹ He-ions/cm² in nickel at room temperature is studied by measuring the thermal desorption spectra during linear heating up to 1000°C. At several annealing stages the trapped helium is measured by means of the nuclear reaction ³He(d, α)H and the target surface is observed by laser scattering and with the scanning electron microscope.

The thermal desorption spectra depend strongly on the implantation fluence but only slightly on the implantation energy, indicating a similar trapping of He in the lattice for the implantation energies used here, The temperature at which desorption starts decreases with increasing fluence. Above the critical fluence for blistering an additional low temperature (150°C) desorption maximum is found.

The desorption peak at 150°C can be approximated theoretically with a single jump desorption process of first order and a Gaussian distribution of activation energies around 1 eV. The measurements indicate that at higher temperatures (>300°C) helium desorption is partly due to the opening of helium bubbles at the target surface.     

Measurement of stored energy of KBr after 4·6°K reactor irradiation

Four KBr single crystals were irradiated at 4·6°K in the core of the Munich Nuclear Reactor for periods of 100 sec, 10 min or 1 hr, respectively. After irradiation the stored energy of the samples was measured in a differential-heat-flow calorimeter at heating rates of 0·29°K/min and 1·1°K/min. At 0·29°K/min peaks of stored energy release were resolved near 11 and 20°K and at 25, 38 and 45°K. An attempt was made to evaluate the corresponding activation energies using two different methods (see Table 1 in the text). The 25°K annealing stage is due to a first order recombination reaction. The anneling states near 20, at 38 and at 45°K do not correspond to first order reactions. Our results are compared with annealing studies on low temperature X-irradiated KBr crystals. A similar experiment was performed on KCl single crystals and is reported, together with a more detailed comparison and discussion of both experiments, in a later paper[14].     

Measurement of stored energy of KCl after 4·6°K reactor irradiation

Five KCl single crystals were irradiated at 4·6°K in the core of the Munich Nuclear Reactor for periods of 100 sec, 10 min, 1 hr or 10 hr, respectively. After irradiation the stored energy of the samples was measured in a differential-heat-flow calorimeter at two different heating rates: 0·29 and 1·1°K/min. At 0·29°K/min peaks of stored energy release were resolved at 21°K, near 27·5°K, at 32·5°K, at 42·5°K and near 50°K. An attempt was made to evaluate the corresponding activation energies using two different methods (see Table 1 in the text). The annealing stages at 21 and 32·5°K correspond to first order kinetics. The annealing stages at 42·5 and near 50°K are not of first order. A similar experiment was performed on KBr single crystals and is reported in the preceding paper. The results are compared with annealing studies on low temperature X-irradiated KCl and KBr crystals. From both our experiments it follows that also during reactor irradiation at 4·6°K ionization mechanisms of defect production should be responsible for the four observed low temperature recovery peaks; only defect recovery at higher temperatures may be at least partially explained by recombination of collision produced defects, i.e. the typical neutron irradiation effect as it takes place in metals.     

Correlation of dielectric properties,Raman spectra and calorimetric measurements of β-cyclodextrin-polyiodide complexes (β-cyclodextrin)2 ·BaI7 ·11H2O and (β-cyclodextrin)2 ·CdI7·15H2O

The frequency and temperature dependence of real and imaginary parts of the dielectric constant (ε′,?ε″), the phase shift (?) and the ac-conductivity (σ) of polycrystalline complexes (β-CD)₂·BaI₇·11H₂O and (β-CD)₂·CdI₇·15H₂O (β-CD?=?β-cyclodextrin) has been investigated over the frequency and temperature ranges 0–100?kHz and 140–420?K in combination with their Raman spectra, DSC traces and XRD patterns. The ε′(T), ε″(T) and ?(T) values at frequency 300?Hz in the range T<330?K show two sigmoids, two bell-shaped curves and two minima respectively revealing the existence of two kinds of water molecule, the tightly bound and the easily movable. Both complexes show the transition of normal hydrogen bonds to flip-flop type at 201?K. In the β-Ba complex most of the eleven water molecules remain tightly bound and only a small number of them are easily movable. On the contrary, in the β-Cd case the tightly bound water molecules are transformed gradually to easily movable. Their DSC traces show endothermic peaks with onset temperatures 118°C, 128°C for β-Ba and 106°C, 123°C, 131°C for β-Cd. The peaks 118°C, 106°C, 123°C are related to the easily movable and the tightly bound water molecules, while the peaks at 128°C, 131°C are caused by the sublimation of iodine. The activation energy of Ba²⁺ ions is 0.52?eV when all the water molecules exist in the sample and 0.99?eV when the easily movable water molecules have been removed. In the case of β-Cd the corresponding activation energies are 0.57?eV and 0.33?eV. The Raman peaks at 179?cm^?1, 170?cm^?1 and 165–166?cm^?1 are due to the charge transfer interactions in the polyiodide chains.     

An acoustic study of the mixed-alkali-mixed phase β-aluminas. Part 1: Naβ″/βAl2O3, Kβ″/βAl2O3 and (Na0.6K0.4)β″/βAl2O3

The relative attenuation of compressional sound waves of frequencies 10–60 MHz in mixed alkali (Na/K) mixed phase (β″/β)-aluminas is reported for temperatures 80–550 K. The internal friction peaks shift to higher frequencies at higher temperatures and are attributed to Na⁺ interactions in Naβ″/β alumina and Na⁺ and K⁺ in NaK β″/β alumina. The broad attenuation peaks occuring at low temperatures (< 300 K) and at higher temperatures (> 400 K) suggest multi-relaxation processes giving a distribution of activation energies. The estimated average activation energy for Na⁺ diffusion in Naβ″/βAl₂ O₃ at low temperatures and high temperatures is 0.183 eV and 0.387 eV respectively. In the NaK β″/βAl₂o₃ samples, the Na ⁺ values were 0.239 eV and 0.386 eV, respectively. The estimated average activation energies for K⁺ diffusion at low and high temperatures in the Kβ″/β-alumina samples were 0.269 eV and 0.371 eV and for K⁺ in the NaK β″/β samples, 0252 eV and 0.339 eV, respectively. The low temperature attenuation peaks were interpreted in terms of ionic interaction in the bulk and the high temperature peaks were related to interactions in the grain boundaries. The measured activation energies confirmed these interpretations. A reversal of the temperature appearance of the Na⁺ and K⁺ high temperature peaks in the NaKβ″/βAl₂ O₃ is explained by the disorder at the grain boundaries.     

Edge emission in AgGaS2 single crystals

This paper reports on a study of the luminescence of single crystals of silver thiogallate (AgGaS₂). Cathodoluminescence measurements were made between liquid helium temperature and 250°K at two voltages, 25 kV and 10 kV and for 6 and ⊥ polarizations at the c axis. The cathodo-excitation technique used revealed the self-absorption phenomena, which are considerable near the bandgap.It is shown that the excitonic emission observed at liquid helium temperature remains up to 150°K and at higher temperatures there is band to band transition. In addition, a free to bound type of luminescence is indicated. This transition would appear to involve a level at 75 meV of the transport band.     

Effect of current on the electroluminescence of defects produced by high-temperature post-implantation annealing of Si: (Er,O) structures in a chlorine-containing environment

The forward-current dependence of defect-related electroluminescence (EL) in silicon structures produced by erbium and oxygen implantation into silicon single crystals with subsequent annealing in a chlorine-containing ambient at 1100°C has been studied. At 80 K, an increase in the current was observed to cause the photon energies corresponding to the maxima of two defect-related EL peaks to increase from 0.807 and 0.87 eV to 0.85 and 0.92 eV, respectively. The increase in the current was also accompanied by an increase in the half-width and intensity of the EL peaks. To explain the observed effects, a model that was proposed earlier for the defect-related EL in plastically deformed silicon is developed further; this model assumes the possible generation of inverse population involving four energy levels.     

Studies of the phosphorescence of polycrystalline hafnia

Persistent phosphorescence induced by ultraviolet light in polycrystalline HfO₂ and enhancement of the phosphorescence by sintering are investigated. The phosphorescence afterglow emission is in the 1.8-3.2 eV spectral range, with a peak at 2.53 eV. The afterglow intensity is significantly increased by sintering in either inert atmosphere or air. The afterglow light sum measured at room temperature for samples sintered at 1500 °C is more than an order of magnitude higher than that before sintering. In the temperature range −50 to 200 °C, three thermoluminescence (TL) peaks are observed near −10, 30, and 100 °C. The relative contribution of the low-temperature TL peak to the total TL intensity decreases after sintering, and this effect is more pronounced upon sintering in inert atmosphere. Conversely, the contribution of the TL peak near 100 °C increases after sintering. The enhancement of the afterglow by sintering is associated with the observed increase in the intensity of TL peaks at and above room temperature and attributed to an increase in the number of deep charge traps. The room-temperature afterglow time decay has a form consistent with the second-order mechanism, ∝(t₀+t)⁻ⁿ, and the best-fit values of both fitting parameters t₀ and n tend to increase with the sintering temperature.     

Annealing of γ-ray irradiated lithium compensated p-type silicon

Abstract

Annealing behavior of electrical properties and photoluminescence spectra both at 77 °K in electron-irradiated melt-grown n-GaAs were investigated. Defects electrically active in the Hall mobility and carrier removal anneal through two stages centered at 250° and 460 °K. From the temperature dependence of carrier concentration the existence of a defect level located near 0.15 eV below the conduction band is supposed. Several emission bands are resolved at 1.51, 1.47, 1.415, 1.305 and ～1.2 eV in photoluminescence experiments. Electron irradiation (1.5–2.0 MeV) causes a remarkable decrease in emission intensity of 1.51 and ～1.2 eV bands. Recovery of emission intensity occurs remarkably when samples are annealed to 520 °K which would correspond to the 460 °K annealing stage for carrier concentration and Hall mobility. The 250 °K annealing stage is not observed in photoluminescence experiments. The 1.415 eV peak appears clearly after irradiation and grows remarkably with the 520 °K annealing, especially in Si-doped samples, resulting in large reverse annealing. This band is tentatively speculated to be a complex of Si on As site with As vacancy. Moreover, in samples doped with Te a new emission band at 1.305 eV (9500 Å) is observed after 470°–620 °K annealing.     

Ionic implantation of N2+ in Ni(110) at 300 K

The present work gives results of a preliminary investigation, carried out by SES, AES, LEED and ELS, on the implantation of nitrogen ions in Ni(110) as a function of ion dose and subsequent surface heat treatment at different temperatures. The fine structure in the SES spectrum is the most sensitive to implantation: peaks at 9, 17.5 and 31.5 eV are shifted towards lower energies by E = 1 eV for the first two peaks and 2.8 eV for the last. At high nitrogen doses a disordered layer is observed by LEED. The p(2 × 3) structure is obtained when the crystal is heated to 750 K. The two electron loss peaks of 4.8 and 10 eV arise from an induced electron N_2p level situated 4.8 eV below the Fermi level.     

Effect of bombardment with iron ions on the evolution of helium,hydrogen, and deuterium blisters in silicon

The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 10¹⁷ cm^–2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe¹⁰⁺ ions with energy of 150 keV in a dose of 5.9 × 10¹⁴ cm^–2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250–900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required.     

Ionic conductivity of sodium beta″-alumina

Measurements of the electrical conductivity of Na ß″-alumina show that the low-temperature activation energies are 0.3337 ± 0.0055 eV for MgO stabilized crystals grown at 1700°C, 0.275 ± 0.015 eV for crystals with the same starting composition position grown at 1650°C, and 0.1716 ± 0.0093 eV for crystals stabilized with ZnO and grown at 1700°C. The conductivities of almost all crystals at 500°C were found to be 1.3 ± 0.6 Ω^?1 cm^?1. In addition to the growth conditions, the presence of a dc electric field, the type of electrode material, the type of conducting ion, and the concentration of stabilizing ion are important in determining the electrical conductivity. These factors are believed to affect the nature of the ordering of vacancies in the ß″-aluminas, leading to variations in the activation energy.