Initial stage of oxidation of titanium

The electronic structure of titanium with different oxidation levels of the surface was studied by photoelectron spectroscopy and electron energy loss spectroscopy (EELS). The spectra of the valence band and the core level of Ti3p and EEL spectra were recorded for a titanium surface with oxidation exposures from 0.12 to 900 L at room temperature. In general, the titanium oxidation process is similar to that for zirconium, which was investigated earlier; however, certain features of the electronic structure that were not observed earlier were revealed for titanium. Even at high oxidation exposures of ∼1000 L, both O2p valence band and valence band corresponding to titanium metal states were observed. During consecutive oxidation, one can see four different positions of the Ti3p peak corresponding to titanium atoms with different valences. It is probable that, at the initial oxidation stage, islands of complex composition oxide were formed on the surface and grew into the bulk during further oxidation.     

H,Cl和F原子钝化Cu_2ZnSnS_4(112)表面态的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法系统研究了Cu_2ZnSnS_4体相的晶格结构、能带、态密度及表面重构与H,Cl和F原子在Cu_2ZnSnS_4(112)表面上的吸附和钝化机理.计算结果表明:表面重构出现在以金属原子Cu-Zn-Sn终止的Cu_2ZnSnS_4(112)表面上,并且表面重构使表面发生自钝化;当单个H,Cl或F原子吸附在S原子终止的Cu_2ZnSnS_4(112)表面上时,相比于桥位(bridge)、六方密排(hcp)位和面心立方(fcc)位点,三种原子均在特定的顶位(top)吸附位点表现出最佳稳定性.当覆盖度为0.5 ML时,无论H,Cl还是F原子占据Cu_2ZnSnS_4(112)表面的2个顶位均具有最低的吸附能.以S原子终止的Cu_2ZnSnS_4(112)表面在费米能级附近的电子态主要由价带顶部Cu-3d轨道和S-3p轨道电子贡献,此即表面态.当H,Cl或F原子在表面的覆盖度达0.5 ML时,费米能级附近的表面态降低,其中H原子钝化表面态的效果最佳,Cl原子的效果次之,F原子的效果最差.表面态降低的主要原因在于吸附原子从S原子获得电子致使表面Cu原子和S原子在费米能级处的态密度峰几乎完全消失.     

Theoretical investigation of the electronic structure of a ferroelectric SbSI cluster at a phase transition

This paper presents the theoretical investigation of energy levels of valence bands (VB) and core levels (CL) of the ferroelectric SbSl single crystals in antiferroelectric and ferroelectric phases. Since the best approximation for the deep VB levels is a calculation by the Hartree-Fock method, the molecular model of a SbSI crystal was used for calculations. This model of the crystal was also used for calculations of the total density of states. It was found that the VB and CL of this ferroelectric semiconductor are sensitive to the small lattice distortion at the phase transition, and that an average of the total density of states, when all atoms participate in oscillations of all normal modes, are more similar to the experimental X-ray photoelectron spectra (XPS). The experimental splitting of CL obtained by XPS was compared with the theoretically calculated one by two different methods. The cluster model calculations showed that the splitting of the CL in SbSI might be caused by photoelectron emission from the atoms, which have different valence state, at the surface.     

Electron spectroscopy study of the 4f energy shift at the surface of samarium metal

The final states produced by the emission of a 4f electron from divalent surface atoms of Samarium metal are directly observed by varying the surface sensitivity of X-Ray Photoemission Spectroscopy (XPS). The minimum energy required to promote an electron from the Fermi level to the first unoccupied 4f state of trivalent bulk atoms is determined by Bremsstrahlung Isochromat Spectroscopy (BIS). The sizable energies involved in these transitions seem to make an intermediate valence at the surface very unlikely.     

Theoretical study of the electronic structure of the Si3N4(0 0 0 1) surface

Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0 0 0 1) surfaces of β-Si₃N₄ and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord with the experimental value of 5.1-5.3 eV for H-free Si₃N₄. Using a two-dimensionally-periodic slab model, a π-bonding interaction is found between threefold-coordinated Si and twofold-coordinated N atoms in the surface plane leading to π and π* surface-state bands in the gap. A surface-state band derived from s-orbitals is also found in the gap between the upper and lower parts of the valence band. Relaxation results in displacements of surface and first-underlayer atoms and to a stronger π-bonding interaction which increases the π-π* gap. The relaxed surface shows no occupied surface states above the valence band maximum, in agreement with recent photoemission data for a thin Si₃N₄ film. The π* band, however, remains well below the conduction band minimum (but well above the Fermi level). Adsorbing H at all dangling-bond sites on the ideally-terminated surface and then relaxing the surface and first underlayer leads to smaller, but still finite, displacements in comparison to the clean relaxed surface. This surface is more stable, by about 3.67 eV per H, than the clean relaxed surface.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Temperature dependence of surface magnetization in local-moment systems

We present a theory to study the temperature-dependent behavior of surface magnetization in a ferromagnetic semi-infinite crystal. Our approach is based on the single-site approximation for the s-f model. The effect of the semi-infinite nature of the crystal is taken into account by a localized perturbation method. Using the mean-field theory for the layer-dependent magnetization, the local density of states and the electron-spin polarization are investigated at different temperatures for ordinary and surface transition cases. The results show that the surface magnetic properties may differ strongly from those in the bulk and the coupling constant of atoms plays a decisive role in the degree of spin polarization. In particular, for the case in which the exchange coupling constant on the surface and between atoms in the first and second layer is higher than the corresponding in the bulk, an enhancement of surface Curie temperature and hence the spin polarization can be obtained.     

Under-coordinated atoms induced local strain, quantum trap depression and valence charge polarization at W stepped surfaces

We have explored the effects of atoms under-coordination on surface structure relaxation, binding energy shift of W stepped surfaces and valence charge polarization by the method of incorporating bond order-length-strength (BOLS) correlation mechanism into high-resolution X-ray photoluminescence spectra (XPS) measurements as well as density functional theory (DFT) calculations. Results show that the 4f_7/2 energy levels of bulk, surface skin and step edge W atoms shift deeper from 2.17 to 2.69 eV with respect to that of the isolated W (28.91±0.01 eV) atoms, while the valence charge energy shift upper from inner to outer layer and from bulk to stepped edge. The surface bond contraction occurs around under-coordinated atoms after geometry relaxation calculation. Consistency among BOLS calculations, DFT calculation and experimental measurements clarifies that the surface bond contraction and consolidation due to the effects of under-coordination atoms induce potential trap depression, which provides perturbation to the Hamiltonian and hence contributes to the surface core level shift deeper, and that the surface valence charge are polarized by the densely trapped core-level electrons to upper energy.     

GaAs(100)表面(4×1)结构的UPS研究

用偏振的紫外光源测量了GaAs(100)表面(4×1)结构的UPS谱,从清洁表面和吸附氧以后UPS的差谱中辨别出了在价带顶以下2eV以内的表面态峰,根据用偏振光所得到的谱和跃迁选择定则的讨论,认为表面态包含了三个峰,价带顶以下0.5eV处有一个对应于表面Ga原子桥键态的峰,在0.7eV处有对应于表面As原子桥键态的峰,而在1.3eV处的峰则同表面原子的悬键态相联系。 关键词：     

Photoemission from valence bands of GaAs(001) grown by molecular beam epitaxy

Angle-resolved photoemission measurements for GaAs(001) prepared by MBE have been carried out using synchroton radiation. Observed bulk features in the spectra can be explained by a direct transition model using free-electron-like final states down to energies as low as 16 eV above the top of the valence bands. Spectral bulk valence band features can be distinguished from surface features by an appropriate choice of photon energies and polar angles. This is demonstrated using calculated valence bands.     

Stoichiometric and oxygen deficient MoO3(010) surfaces

The (010) surface of single crystal MoO₃ has been prepared and examined using LEED, XPS, UPS, and ELS. Three methods yield the stoichiometric surface: scraping in UHV and annealing, ion etching followed by reoxidation (770 K, 10² Pa O₂), or oxygen treatment to remove carbon contamination. LEED shows the surface periodicity is the same as that of the bulk (010). The MoO₃ valence band is 7 eV wide with density of states maxima at 1.5, 3.6, and 5.6 eV below the top of the valence band. Heating MoO₃ in vacuum reduces the surface region. XPS indicates the O/Mo atomic ratio decreases to 2.85 ± 0.12 on heating to 600 K. Ar ion bombardment disorders the surface and reduces the surface O/Mo atomic ratio to 1.6. Annealing of reduced surfaces at > 770 K incompletely reoxidizes them by diffusion of oxygen from the bulk. UPS of reduced and annealed MoO₃ exhibits two new emission features in the bandgap at 0.9 and 2.0 eV above the top of the valence band. These features originate from Mo derived states of a defect involving two or more Mo atoms, such as crystallographic shear planes. Because of the insulating nature of MoO₃, surface charging and electron beam induced damage were substantial hindrances to electron spectroscopic examination.     

A density functional study of plutonium dioxide

The electronic and geometric structures of bulk PuO₂ and its (110) surface have been studied using a periodic model within the generalized gradient approximation (GGA) of density functional theory (DFT). The sixty core electrons of the Pu atom have been represented by a relativistic effective core potential and scalar relativistic effects have been incorporated on the valence orbitals. For bulk PuO₂, we predict an equilibrium lattice constant of 10.10 a.u. and a cohesive energy of 17.28 eV, in good agreement with experimental data. For the (110) surface, upon relaxation, the distance between the top layer and the next layer is found to decrease by 0.12 ?, i.e. 5.3% of the corresponding interlayer distance in the bulk. The distance between the two oxygen atoms on the top layer is found to increase by 0.15 ?, i.e. 5.6% of the corresponding bulk value. The small surface relaxation energy of 0.268 eV per unit cell indicates the fair stability of this surface. The effective charges on Pu and O atoms show that the chemical bonding in this system is not purely ionic. Together with the metallic feature of the density of states (DOS) on the surface, the effective charge distribution provides some basis for understanding surface reactivity and corresponding support for catalysis. Received 16 June 2000     

Effective Hamiltonian for fermions in an optical lattice across a Feshbach resonance

We derive the Hamiltonian for cold fermionic atoms in an optical lattice across a broad Feshbach resonance, taking into account both multiband occupations and neighboring-site collisions. Under typical configurations, the resulting Hamiltonian can be dramatically simplified to an effective single-band model, which describes a new type of resonance between the local dressed molecules and the valence bond states of fermionic atoms at neighboring sites. On different sides of such a resonance, the effective Hamiltonian is reduced to either a t-J model for the fermionic atoms or an XXZ model for the dressed molecules. The parameters in these models are experimentally tunable in the full range, which allows for observation of various phase transitions.     

Valence band formation in small silver clusters

UV photoemission spectra of valence electrons in small silver clusters have been compared with spectra from bulk silver samples using synchrotron radiation, 16 <hν< 27 eV. Spectra for single silver atoms supported on carbon are indicative of a completely filled 4d¹⁰ initial state configuration. With increased cluster size, both density of states and valence band modulations with respect to photon energy resemble the bulk metal more closely. Spectral modulation, characteristic of conservation of crystal momentum, appears to require a cluster consisting of ～150 atoms.     

Scaled-energy spectroscopy of a ｜M｜= 1 Rydberg barium atom in an electric field

We observe strong energy-dependent quantum defects in the scaled-energy Stark spectra for |M| = 1 Rydberg states of barium atoms at three scaled energies: ε = 2.000,ε = 2.500 and ε = 3.000.In an attempt to explain the observations,theoretical calculations of closed orbit theory based on a model potential including core effect are performed for non-hydrogenic atoms.While such a potential has been uniformly successful for alkali atoms with a single valence electron,it fails to match experimental results for barium atoms in the 6snp Rydberg states with two valence electrons.Our study points out that this discrepancy is due to the strong perturbation from the 5d8p state,which voids the simple approximation for constant quantum defects of principle quantum number n.     

Spin Waves in a Surface-Diluted Quant um Spin system

A theoretical investigation of the effects of surface dilution on spin waves in a semi-infinite transverse Ising model (TIM) is presented. Within the framework of the double-time Green's function theory, the loctl density of spin-wave states is obtained by the application of the cluster-Bethe-lattice (CBL) method. Numerical calculations of paramagnetic phases reveal that surface dilution will lead to appearance of the localized spin-wave states whose frequencies are bulk independent while the corresponding density of states is a function of the exchange interactions. Increase of the bulk exchange interactions between the surface and the bulk spins tends to diminish the localized spin-wave states. Dependence of the local density of states on the concentration p of the magnetic atoms is similar with that in a three-dimensional infinite TIM which has been discussed in our previous paper.     

First-principles study for the atomic structures and electronic properties of PbTiO3 oxygen-vacancies (0 0 1) surface

The structural and electronic properties of fully-relaxed PbTiO₃ (0 0 1) oxygen-vacancy surface with PbO and TiO₂ terminations are investigated by first-principles calculations. In contrast to the perfect surface, the smaller surface rumples and interlayer distances have been found. The largest relaxation occurs on the second layer atoms not on the surface layer ones, and some in-gap Ti 3d states at about −1.1 eV below the Fermi-level are observed in the TiO₂-terminated surface caused by oxygen-vacancies. For the PbO-terminated surface, some in-gap Ti 3d states and Pb 6p states also move into the bulk midgap region to become partially occupied, and two different chemical states of the Pb 6s states were found. One is attributed to the bulk perovskite Pb atoms and another one is caused by the relaxation of surface Pb atoms. These theoretical results would give a good reference for the future experimental studies.     

Electron states of ultrathin Pd and Cu films on (001)Ag

We present the results of a theoretical calculation of the electronic structure of a monolayer of Pd and Cu deposited on the (001) surface of Ag. The adsorbate atoms are placed in a central site with the same lateral periodicity as a parallel plane of the substrate. The method of calculation is a parametrized LCAO with hopping integrals determined through a fit to bulk data. Charge transfer effects are taken approximately into account by assuming the intraatomic parameters to vary as the valence orbital ionization potentials. Energy bands and local densities of states are given and the nature and location of the adsorbate states are discussed. The results are compared with the experimental data: good agreement is found for the Pd on Ag system. For Cu on Ag we find that our assumptions do not explain the photoemission data and suggest that some clustering of Cu atoms occurs during the deposition.     

Magnetic states at the oxygen surfaces of ZnO and Co-doped ZnO

First principles calculations of the O surfaces of Co-ZnO show that substitutional Co ions develop large magnetic moments which long-range order depends on their mutual distance. The local spin polarization induced at the O atoms is 3 times larger at the surface than in the bulk, and the surface stability is considerably reinforced by Co. Moreover, a robust ferromagnetic state is predicted at the O (0001) surface even in the absence of magnetic atoms, correlated with the number of p holes in the valence band of the oxide, and with a highly anisotropic distribution of the magnetic charge even in the absence of spin-orbit coupling.