Far infrared optical properties of free carriers in GaAs

Transmission and reflection measurements over the frequency range 17–200 cm^?1 were made on GaAs with electron concentrations of 1·0 and 4·9 × 10¹⁶ cm^?3. The plasma frequencies of the samples fall within the measurement range. When values of the free carrier absorption coefficient α and the real refractive index n as derived from the data are plotted in the form (αn)^?1 vs (frequency)², the plots are linear, in excellent agreement with Drude theory. Deduced values of effective mass, relaxation time and mobility agree with published values and with a d.c. drift measurement.     

Far infrared optical properties of NbSe3

We have measured the far infrared reflectance of NbSe₃ and used models of the frequency dependent conductivity to fit the data. General arguments show that at 2 K a charge density wave (CDW) energy gap exists between 120 and 190 cm^?1, the relaxation time(s) of the free carriers and CDW pinned mode is >30×10^?12 s, and the ratio of the free carrier concentration to band mass is <2×10²⁰ cm^?3/m₀.     

A quantum cascade laser-based optical feedback cavity-enhanced absorption spectrometer for the simultaneous measurement of CH4 and N2O in air

Optical feedback cavity-enhanced absorption spectroscopy (OF CEAS) has been demonstrated with a thermoelectrically cooled continuous wave distributed feedback quantum cascade laser (QCL) operating at wavelengths around 7.84 μm. The QCL is coupled to an optical cavity which creates an absorption pathlength greater than 1000 m. The experimental design allows optical feedback of infra-red light, resonant within the cavity, to the QCL, which initiates self-locking at each TEM₀₀ cavity mode frequency excited. The QCL linewidth is narrowed to below the mode linewidth, greatly increasing the efficiency of injection of light into the cavity. At the frequency of each longitudinal cavity mode, the absorption coefficient of an intracavity sample is obtained from the transmission at the mode maximum, measured with a thermoelectrically cooled detector: spectral line profiles of CH₄ and N₂O in ambient air were recorded simultaneously and with a resolution of 0.01386 cm^?1. A minimum detectable absorption coefficient of 5.5×10^?8 cm^?1 was demonstrated after an averaging time of 1 s for this completely thermoelectrically cooled system. The bandwidth-normalised limit for a single cavity mode is 5.6×10^?9 cm^?1?Hz^?1/2 (1σ).     

Charge carrier mobility in crystals of the Pb<Subscript>0.67</Subscript>Cd<Subscript>0.33</Subscript>F<Subscript>2</Subscript> superionic conductor

The frequency (ν = 10^?1–10⁷ Hz) dependences σ(ν) of the conductivity of single crystals of the Pb_0.67Cd_0.33F₂ superionic conductor with the fluorite-type structure (CaF₂) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F^?. From experimental curves σ(ν), the direct-current (dc) conductivity σ_dc and the average charge carrier hopping frequency ν_h have been determined. This has made it possible to calculate the charge carrier mobility μ_mob and charge carrier concentration n _mob in these crystals. At room temperature (293 K), the electrical parameters are σ_dc = 1.6 × 10^?4 S/cm, ν_h = 2.7 × 10⁷ Hz, μ_mob = 2.0 × 10^?7 cm²/(s V), and n _mob = 5.1 × 10²¹ cm^?3.     

Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure

Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ～60?Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In_0.29Ga_0.71As_0.99N_0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ～60?Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ～2?×?10¹⁸cm^?3 the optical gain of the nano-heterostructure is of 2100?cm^?1 at the wavelength is of 1.30?μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30?μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.     

Cavity-enhanced optical frequency comb spectroscopy in the mid-infrared application to trace detection of hydrogen peroxide

We demonstrate the first cavity-enhanced optical frequency comb spectroscopy in the mid-infrared wavelength region and report the sensitive real-time trace detection of hydrogen peroxide in the presence of a large amount of water. The experimental apparatus is based on a mid-infrared optical parametric oscillator synchronously pumped by a high-power Yb:fiber laser, a high-finesse broadband cavity, and a fast-scanning Fourier transform spectrometer with autobalancing detection. The comb spectrum with a bandwidth of 200 nm centered around 3.76 μm is simultaneously coupled to the cavity and both degrees of freedom of the comb, i.e. the repetition rate and carrier envelope offset frequency, are locked to the cavity to ensure stable transmission. The autobalancing detection scheme reduces the intensity noise by a factor of 300, and a sensitivity of 5.4×10^?9 cm^?1?Hz^?1/2 with a resolution of 800 MHz is achieved (corresponding to 6.9×10^?11 cm^?1?Hz^?1/2 per spectral element for 6000 resolved elements). This yields a noise equivalent detection limit for hydrogen peroxide of 8 parts-per-billion (ppb); in the presence of 2.8 % of water the detection limit is 130 ppb. Spectra of acetylene, methane, and nitrous oxide at atmospheric pressure are also presented, and a line-shape model is developed to simulate the experimental data.     

Dynamics of hot carrier cooling in photo-excited GaAs

Carrier relaxation following excitation with subpicosecond optical pulses, determined from time resolved nearband gap transmission spectrum changes, is described for GaAs. For n < 5×10¹⁷cm^-3 the observed relaxation can be related to carrier-phonon interaction, but at higher densities the rate of relaxation is significantly slowed, possibly due to carrier screening.     

Untersuchung von Raumladungsschichten an Zinkoxid-Oberflächen mit Hilfe der Elektroreflexion

Using the electroreflectance method space charge layers on crystals of different conductivities have been identified. The space charge layers were formed by adsorption of oxygen or atomic hydrogen. The limit of sensitivity required the irradiation with 5×10¹³ photons/cm²×sec of band gap energy. After exposure to atomic hydrogen all samples showed accumulation layers. With a partial pressure of oxygen above 350 mm Hg crystals of high conductivity (σ=47 ohm^?1 cm^?1) exhibit depletion layers, which change into accumulation layers, if the partial pressure is reduced below the limit. Crystals of a lower conductivity (σ=10^?3–10^?1 ohm^?1 cm^?1) show accumulation layers up to the highest applied oxygen pressure of 760 mm Hg. The phenomena are attributed to a dynamical equilibrium between adsorption and photo-desorption of oxygen. This equilibrium depends on oxygen pressure and free carrier concentration. By comparing a calculated curve with the experimental results the value of 3.31 ev is obtained for the energy gap, light polarized perpendicular to thec-acis.     

半导体量子阱中电子自旋弛豫和动量弛豫

根据电子自旋轨道耦合对自旋极化弛豫影响的DP机理进一步导出了半导体中电子自旋弛豫与动量弛豫及载流子浓度的关系，并采用飞秒抽运探测技术在室温下测量AlGaAs/GaAs 多量子阱中载流子浓度在 1×10¹⁷—1×10¹⁸cm^-3范围内，电子自旋弛豫时间由58ps增加至82 ps的变化情况，与理论计算值符合，说明了随着载流子浓度的增加，载流子间的频繁散射加速了电子动量驰豫，减弱了电子自旋轨道耦合作用，从而延长了电子自旋寿命. 关键词： 电子自旋轨道耦合 电子自旋弛豫和动量弛豫 飞秒光谱技术     

Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well

The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 10¹⁰ cm^?2 to 1.3 × 10¹¹ cm^?2.     

Temperature relaxation and energy loss of hot carriers in graphene

The temperature relaxation and energy loss of hot Dirac fermions are investigated theoretically in graphene with carrier–optical phonon scattering. The time evolutions of temperature and energy loss for hot Dirac fermions in graphene are calculated self-consistently. It shows that the carrier–optical phonon coupling results in the energy relaxation of hot carriers excited by an electric field, and the relaxation time for temperature is about 0.5–1 ps and the corresponding energy loss is about 10–25 nW per carrier for typically doped graphene samples with a carrier density range of 1–5×10¹² cm^?2. Moreover, we analyze the dependence of temperature and energy relaxation on initial hot carrier temperature, lattice temperature and carrier density in detail.     

Mg2Si的电子结构和热电输运性质的理论研究

利用全势线性缀加平面波法,对Mg₂Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg₂Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg₂Si功率因子达到最大时的最佳载流子浓度分别为7749×10¹⁹ cm^-3和 关键词： 2Si')" href="#">Mg₂Si 全势线性缀加平面波法 热电输运性质     

Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T ₁ in semiconductors. It was applied to bulk n-type GaAs, where T ₁ was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n _D = 9 × 10¹⁶ cm^?3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T ₁ with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Transmutation doping of GaAs by thermal neutrons

The electrical properties of GaAs have been modified by transmutation of about 1 × 10¹⁸ As atoms per cm³ to Se and 0.7 × 10¹⁸ Ga atoms per cm³ to Ge in a flux of thermal neutrons, followed by annealing at temperatures from 625 to 900°C. Enhancement of carrier concentration was not observed in n⁺ samples, although p and n^? material showed changes in carrier concentration of the expected magnitude.     

Ultrafast dynamics of intersubband relaxation in GaAs quantum wells: hot carrier and phonon populations effects

The dynamics of intersubband relaxation in GaAs quantum wells and the role of hot carriers and the phonon distributions have been investigated using two different optical techniques with femtosecond resolution: 1) time-resolved photoluminescence and 2) pump and probe experiments. The (2→1) intersubband relaxation times have been measured as functions of well widths (100Å < L_well < 220Å), under different experimental conditions (15K < T_lattice < 300K, and 1×10¹⁰ cm^-2 < excitation densities < 1×10¹² cm^-2). The electron intersubband relaxation time is deduced from the decay time of the n=2 well luminescence (or differential transmission) intensity. For thin wells (<150Å), a fast intersubband (2→1) relaxation time ≤ 3 ps has been measured. For thicker wells, the measured decay times are found to be critically dependent on the excitation conditions (vary from 5 ps to 40 ps). The well width dependence of the intersubband relaxation time does not show the strong dependence (2 orders of magnitude) predicted theoretically for electron-LO phonon scattering. Our results show that the hot phonon populations and the slow carrier cooling rate limit the observation of subpicosecond relaxation time. For thick well widths, our results also suggest that hot carriers effects play an important role in the intersubband relaxation mechanisms.     

Electrical properties of proton conducting solid biopolymer electrolytes based on starch–chitosan blend

Two systems (salted and plasticized) of starch–chitosan blend-based electrolytes incorporated with ammonium chloride (NH₄Cl) are prepared via solution cast technique. The incorporation of 25 wt% NH₄Cl has maximized the room temperature conductivity of the electrolyte to (6.47?±?1.30)?×?10^?7 S cm^?1. Conductivity is enhanced to (5.11?±?1.60)?×?10^?4 S cm^?1 on addition of 35 wt% glycerol. The temperature dependence of conductivity for all electrolytes is Arrhenian, and the value of activation energy (E _a ) decreases with increasing conductivity. Conductivity is found to be influenced by the number density (n) and mobility (μ) of ions. The complexation between the electrolytes components is proven by Fourier transform infrared analysis. The relaxation time (t _r ) for selected electrolytes is found to decrease with increasing conductivity and temperature. Conduction mechanism for the highest conducting electrolyte in salted and plasticized systems is determined by employing Jonscher’s universal power law.     

Laser induced modulation of optical absorption in ZnSe

Laser pulses generate electron-hole pairs in a ZnSe crystal and selective trapping alters the carrier concentration. A result is modulated optical absorption Δα, probed by a second monochromatic beam. The effect is extrinsic and may be associated with ionized Cu in substitution for Zn. Phase-sensitive kinetics measurements reveal a thermal component and indicate that at least two impurity levels are involved, the latter with photon-capture cross sections q in the range 0.3 × 10^?16 to 0.9 × 10^?16cm², corresponding to non-equilibrium carrier concentrations Δn?10¹³cm^?3.